公开(公告)号：US20130255889A1

公开(公告)日：2013-10-03

申请号：US13839586

申请日：2013-03-15

申请人： BESI SWITZERLAND AG

发明人： Ernst Barmettler ,  Fabian Hurschler ,  Brian Pulis

IPC分类号： H01L21/67

CPC分类号： H01L21/67005 ,  H01L21/00 ,  H01L21/02 ,  H01L21/67 ,  H01L21/67132 ,  H01L21/67739 ,  Y10S156/931 ,  Y10S156/932 ,  Y10S156/943 ,  Y10T156/1168 ,  Y10T156/1179 ,  Y10T156/1983

摘要： A method for detaching a semiconductor chip from a foil uses a die ejector comprising plates having a straight supporting edge and an L-shaped supporting edge comprises: lifting of the plates to a height H1 above the surface of a cover plate; lowering of a first pair of plates with L-shaped supporting edge; optionally, lowering of a second pair of plates with L-shaped supporting edge; lifting of the plates that have not yet been lowered to a height H2>H1; staggered lowering of plates that have not yet been lowered, with at least one or several plates not being lowered; optionally, lowering of the plates that have not yet been lowered to a height H3

摘要翻译： 用于从箔片上分离半导体芯片的方法使用包括具有直的支撑边缘和L形支撑边缘的板的模具顶出器包括：将板件提升到盖板表面上方的高度H1; 降低具有L形支撑边缘的第一对板; 可选地，降低具有L形支撑边缘的第二对板; 提升尚未降低到H2> H1高度的板材; 至少有一个或几个板材不被降低，板材的交错降低尚未降低; 可选地，将尚未降低的板降低到高度H3

公开(公告)号：US09240334B2

公开(公告)日：2016-01-19

申请号：US14085693

申请日：2013-11-20

申请人： Besi Switzerland AG

发明人： Ernst Barmettler ,  Irving Rodriguez

IPC分类号： B32B38/10 ,  H01L21/67 ,  B32B43/00 ,  H01L21/683 ,  H01L23/00

CPC分类号： H01L21/67011 ,  B32B43/006 ,  H01L21/67132 ,  H01L21/67288 ,  H01L21/6836 ,  H01L24/75 ,  H01L2221/68381 ,  H01L2224/756 ,  H01L2224/75753 ,  Y10S156/932 ,  Y10S156/943 ,  Y10T156/1105 ,  Y10T156/1179 ,  Y10T156/1983

摘要： The invention relates to the prepeeling phase of methods for detaching a semiconductor chip from a foil. According to a first aspect, the invention relates to the determination of time periods, which each defines a duration of a prepeeling step. In a setup phase, the following steps are carried out for each prepeeling step: Initiating the method step; Repeating the two steps Recording of an image of the semiconductor chip and assignment of a time period to the image which has passed since the initiation of the prepeeling step, and Checking whether in the image a peripheral region of the semiconductor chip is darker than a predetermined brightness value; until the check leads to the result that no peripheral region of the semiconductor chip is darker than the predetermined brightness value. According to a second aspect, the detachment of the semiconductor chip from the foil is monitored in realtime.

摘要翻译： 本发明涉及从箔片上分离半导体芯片的方法的印前阶段。 根据第一方面，本发明涉及确定时间段，每个时间段定义了预打步骤的持续时间。 在设置阶段，对每个预打印步骤执行以下步骤：启动方法步骤; 重复两个步骤记录半导体芯片的图像并将时间段分配到从涂覆步骤开始以来已经过去的图像，并且检查图像中半导体芯片的外围区域是否比预定的 亮度值 直到检查导致半导体芯片的周边区域不比预定亮度值更暗的结果。 根据第二方面，实时监测半导体芯片与箔的分离。

公开(公告)号：US09039867B2

公开(公告)日：2015-05-26

申请号：US13839586

申请日：2013-03-15

申请人： Besi Switzerland AG

发明人： Ernst Barmettler ,  Fabian Hurschler ,  Brian Pulis

IPC分类号： B32B38/10 ,  H01L21/67 ,  H01L21/677 ,  H01L21/02 ,  H01L21/00

CPC分类号： H01L21/67005 ,  H01L21/00 ,  H01L21/02 ,  H01L21/67 ,  H01L21/67132 ,  H01L21/67739 ,  Y10S156/931 ,  Y10S156/932 ,  Y10S156/943 ,  Y10T156/1168 ,  Y10T156/1179 ,  Y10T156/1983

摘要： A method for detaching a semiconductor chip from a foil uses a die ejector comprising plates having a straight supporting edge and an L-shaped supporting edge comprises: lifting of the plates to a height H1 above the surface of a cover plate; lowering of a first pair of plates with L-shaped supporting edge; optionally, lowering of a second pair of plates with L-shaped supporting edge; lifting of the plates that have not yet been lowered to a height H2>H1; staggered lowering of plates that have not yet been lowered, with at least one or several plates not being lowered; optionally, lowering of the plates that have not yet been lowered to a height H3

摘要翻译： 用于从箔片上分离半导体芯片的方法使用包括具有直的支撑边缘和L形支撑边缘的板的模具顶出器包括：将板件提升到盖板表面上方的高度H1; 降低具有L形支撑边缘的第一对板; 可选地，降低具有L形支撑边缘的第二对板; 提升尚未降低到H2> H1高度的板材; 至少有一个或几个板材不被降低，板材的交错降低尚未降低; 可选地，将尚未降低的板降低到高度H3

公开(公告)号：US20140196853A1

公开(公告)日：2014-07-17

申请号：US14085693

申请日：2013-11-20

申请人： Besi Switzerland AG

发明人： Ernst Barmettler ,  Irving Rodriguez

IPC分类号： H01L21/67 ,  H01L21/683

CPC分类号： H01L21/67011 ,  B32B43/006 ,  H01L21/67132 ,  H01L21/67288 ,  H01L21/6836 ,  H01L24/75 ,  H01L2221/68381 ,  H01L2224/756 ,  H01L2224/75753 ,  Y10S156/932 ,  Y10S156/943 ,  Y10T156/1105 ,  Y10T156/1179 ,  Y10T156/1983

摘要： The invention relates to the prepeeling phase of methods for detaching a semiconductor chip from a foil. According to a first aspect, the invention relates to the determination of time periods, which each defines a duration of a prepeeling step. In a setup phase, the following steps are carried out for each prepeeling step: Initiating the method step; Repeating the two steps Recording of an image of the semiconductor chip and assignment of a time period to the image which has passed since the initiation of the prepeeling step, and Checking whether in the image a peripheral region of the semiconductor chip is darker than a predetermined brightness value; until the check leads to the result that no peripheral region of the semiconductor chip is darker than the predetermined brightness value. According to a second aspect, the detachment of the semiconductor chip from the foil is monitored in realtime.

摘要翻译： 本发明涉及从箔片上分离半导体芯片的方法的印前阶段。 根据第一方面，本发明涉及确定时间段，每个时间段定义了预打步骤的持续时间。 在设置阶段，对每个预打印步骤执行以下步骤：启动方法步骤; 重复两个步骤记录半导体芯片的图像并将时间段分配到从涂覆步骤开始以来已经过去的图像，并且检查图像中半导体芯片的外围区域是否比预定的 亮度值 直到检查导致半导体芯片的周边区域不比预定亮度值更暗的结果。 根据第二方面，实时监测半导体芯片与箔的分离。