摘要:
A method of making an IC package having a die and a substrate that are to be attached at an attachment station including providing the die and substrate and, at a location remote from the attachment station, coating at least one of the die and a die attachment portion of the substrate with attachment medium.
摘要:
According to one embodiment, there is provided a bonding method of a semiconductor chip. The bonding method includes arranging an activated front surface of a semiconductor chip and an activated front surface of a substrate so as to face each other with a back surface of the semiconductor chip attached to a sheet. The bonding method includes pushing the back surface of the semiconductor chip through the sheet to closely attach the activated front surface of the semiconductor chip and the activated front surface of the substrate. The bonding method includes stripping the sheet from the back surface of the semiconductor chip while maintaining a state in which the activated front surface of the semiconductor chip is closely attached to the activated front surface of the substrate.
摘要:
The invention relates to the prepeeling phase of methods for detaching a semiconductor chip from a foil. According to a first aspect, the invention relates to the determination of time periods, which each defines a duration of a prepeeling step. In a setup phase, the following steps are carried out for each prepeeling step: Initiating the method step; Repeating the two steps Recording of an image of the semiconductor chip and assignment of a time period to the image which has passed since the initiation of the prepeeling step, and Checking whether in the image a peripheral region of the semiconductor chip is darker than a predetermined brightness value; until the check leads to the result that no peripheral region of the semiconductor chip is darker than the predetermined brightness value. According to a second aspect, the detachment of the semiconductor chip from the foil is monitored in realtime.
摘要:
The invention relates to the prepeeling phase of methods for detaching a semiconductor chip from a foil. According to a first aspect, the invention relates to the determination of time periods, which each defines a duration of a prepeeling step. In a setup phase, the following steps are carried out for each prepeeling step: Initiating the method step; Repeating the two steps Recording of an image of the semiconductor chip and assignment of a time period to the image which has passed since the initiation of the prepeeling step, and Checking whether in the image a peripheral region of the semiconductor chip is darker than a predetermined brightness value; until the check leads to the result that no peripheral region of the semiconductor chip is darker than the predetermined brightness value. According to a second aspect, the detachment of the semiconductor chip from the foil is monitored in realtime.
摘要:
A die bonder comprises a storage unit which stores the image of the wafer taken by an imaging unit, a recognition pattern included the outline of a die formed on the wafer, and a recognition program, and a monitor-processing unit which gets the position on the wafer, of the die whose map data indicates normal, in the way that the die is matched with the recognition pattern by executing the recognition program, and that the center position of the die is gotten.Thus, the die bonder can recognize the position of the die without regard to the condition of dies on the wafer.
摘要:
The present invention provides a method for manufacturing a semiconductor device which includes at least supplying an adhesive for bonding an electronic component which has a plurality of bumps with a substrate which has a plurality of bonding pads corresponding to the bumps, to at least a portion of the substrate, between the electronic component and the substrate, flow-casting the adhesive on the substrate by a flow-casting unit, in such a manner that the expression S1/S0>1 is satisfied, where S0 is the total contact surface area with the substrate of the adhesive supplied to the substrate, and S1 is the total contact surface area with the substrate of the adhesive after the flow-casting, and curing the adhesive while making the adhesive contact with the electronic component and the substrate in a state where the bumps are abutted against the bonding pads.
摘要翻译:本发明提供一种制造半导体器件的方法,该方法至少包括将具有多个凸起的电子部件与具有多个与该凸起相对应的焊盘的基板接合的粘合剂,至少部分 电子部件和基板之间的基板通过流铸单元将粘合剂流延在基板上,使得表达式S 1 / S 0 < SUB >> 1满足,其中S 是与提供给基板的粘合剂的基材的总接触表面积,S 1 <1是总接触表面积 与流延铸造之后的粘合剂基材一起固化,同时使粘合剂在凸起抵靠接合焊盘的状态下与电子部件和基板接触。
摘要:
An IC cartridge is provided, which includes: a cartridge body provided with hollowed-out parts, and an ejection mechanism including a substrate and projected structures which are provided on the substrate and can be slideably extended into the hollowed-out parts for pushing out IC chips; the hollowed-out parts and the projected structures cooperate to form groove structures for accommodating the IC chips. In usage, the IC chip in the groove structure are pushed out by sliding of the projected structures of the ejection mechanism through the hollowed-out parts. Thus, removing and flipping over of the IC chips is facilitated, and the processing safety of the IC chip can be ensured.
摘要:
To allow short time spreading for adhesive, verifying whether the adhesive is spread out to a member end. In obtaining a bonded member by applying the adhesive to a surface of one of two members and bonding the members with a member bonding device, a tilt adjusting device acquires with a camera an image of spreading state of the adhesive in the members' bonding surface, and adjusts the tilt of the bonded member when a non-spreading part of the adhesive between ends of the bonded member and the adhesive has a size bias so that the adhesive moves to the larger side of the part, and a spreading adjustment device controls a pushing amount and a pushing time interval of a pressing-side member to adjust spreading of the adhesive so that the part size reduces to a predetermined size depending on the part size acquired with the camera, and cures the adhesive in the bonded member edge with the non-spreading part eliminated.
摘要:
According to one embodiment, there is provided a bonding method of a semiconductor chip. The bonding method includes arranging an activated front surface of a semiconductor chip and an activated front surface of a substrate so as to face each other with a back surface of the semiconductor chip attached to a sheet. The bonding method includes pushing the back surface of the semiconductor chip through the sheet to closely attach the activated front surface of the semiconductor chip and the activated front surface of the substrate. The bonding method includes stripping the sheet from the back surface of the semiconductor chip while maintaining a state in which the activated front surface of the semiconductor chip is closely attached to the activated front surface of the substrate.
摘要:
The invention relates to a method for electrically contacting a component (10) (for example a power component and/or a (semiconductor) component having at least one transistor, preferably an IGBT (insulated-gate bipolar transistor)) having at least one contact (40, 50), at least one open-pored contact piece (60, 70) is galvanically (electrochemically or free of external current) connected to at least one contact (40, 50). In this way, a component module is achieved. The contact (40, 50) is preferably a flat part or has a contact surface, the largest planar extent thereof being greater than an extension of the contact (40, 50) perpendicular to said contact surface. The temperature of the galvanic connection is at most 100° C., preferably at most 60° C., advantageously at most 20° C. and ideally at most 5° C. and/or deviates from the operating temperature of the component by at most 50° C., preferably by at most 20° C., in particular by at most 10° C. and ideally by at most 5° C., preferably by at most 2° C. The component (10) can be contacted by means of the contact piece (60, 70) with a further component, a current conductor and/or a substrate (90). Preferably, a component (10) having two contacts (40, 50) on opposite sides of the component (10) is used, wherein at least one open-pored contact piece (60, 70) is galvanically connected to each contact (40, 50).