利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

84 条记录 (耗时 0.029 秒)

    Monitor CMP process using scatterometry
    1.
    发明授权
    Monitor CMP process using scatterometry 有权
    使用散点法监测CMP过程

    公开(公告)号：US06594024B1

    公开(公告)日：2003-07-15

    申请号：US09886863

    申请日：2001-06-21

    申请人： Bhanwar Singh ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan ,  Carmen Morales

    发明人： Bhanwar Singh ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan ,  Carmen Morales

    IPC分类号： G01B1128

    CPC分类号： B24B37/005 ,  B24B49/12 ,  G01N21/47 ,  G01N21/9501 ,  H01L21/30625

    摘要： One aspect of the present invention relates to an in-line system for monitoring and optimizing an on-going CMP process in order to determine a CMP process endpoint comprising a wafer, wherein the wafer is subjected to the CMP process; a CMP process monitoring system for generating a signature related to wafer dimensions for the wafer subjected to the CMP process; and a signature library to which the generated signature is compared to determine a state of the wafer. Another aspect relates to an in-line method for monitoring and optimizing an on-going CMP process involving providing a wafer, wherein the wafer is subjected to a CMP process; generating a signature associated with the wafer; comparing the generated signature to a signature library to determine a state of the wafer; and using a closed-loop feedback control system for modifying the on-going CMP process according to the determined state of the wafer.

    摘要翻译： 本发明的一个方面涉及用于监测和优化正在进行的CMP工艺的在线系统，以便确定包括晶片的CMP工艺端点，其中晶片经历CMP工艺; 用于生成与经历CMP处理的晶片的晶片尺寸相关的签名的CMP过程监控系统; 以及生成的签名被比较的签名库，以确定晶片的状态。 另一方面涉及用于监测和优化涉及提供晶片的正在进行的CMP工艺的在线方法，其中所述晶片经受CMP工艺; 产生与晶片相关联的签名; 将生成的签名与签名库进行比较以确定晶片的状态; 以及使用闭环反馈控制系统来根据所确定的晶片状态来修正正在进行的CMP工艺。

    Refractive index system monitor and control for immersion lithography
    2.
    发明授权
    Refractive index system monitor and control for immersion lithography 有权
    折射率系统监测和控制浸没光刻

    公开(公告)号：US06999254B1

    公开(公告)日：2006-02-14

    申请号：US10967845

    申请日：2004-10-18

    申请人： Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Ramkumar Subramanian

    发明人： Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Ramkumar Subramanian

    IPC分类号： G02B7/00

    CPC分类号： G03F7/70341

    摘要： A system and/or method are disclosed for measuring and/or controlling refractive index (n) and/or lithographic constant (k) of an immersion medium utilized in connection with immersion lithography. A known grating structure is built upon a substrate. A refractive index monitoring component facilitates measuring and/or controlling the immersion medium by utilizing detected light scattered from the known grating structure.

    摘要翻译： 公开了用于测量和/或控制与浸没式光刻相关联的浸渍介质的折射率（n）和/或光刻常数（k）的系统和/或方法。 已知的光栅结构被构建在衬底上。 折射率监测部件通过利用从已知光栅结构散射的检测光，便于测量和/或控制浸没介质。

    System and method to monitor reticle heating
    3.
    发明授权
    System and method to monitor reticle heating 有权
    监控标线加热的系统和方法

    公开(公告)号：US06809793B1

    公开(公告)日：2004-10-26

    申请号：US10050456

    申请日：2002-01-16

    申请人： Khoi A. Phan ,  Bhanwar Singh ,  Ramkumar Subramanian ,  Bharath Rangarajan

    发明人： Khoi A. Phan ,  Bhanwar Singh ,  Ramkumar Subramanian ,  Bharath Rangarajan

    IPC分类号： G03B2752

    CPC分类号： G03F7/70558 ,  G03F7/70875

    摘要： A system and method are disclosed which enable temperature of a substrate, such as mask or reticle, to be monitored and/or regulated. One or more temperature sensors are associated with the substrate to sense substrate temperature during exposure by an exposing source. The sensed temperature is used to control one or more process parameters of the exposure to help maintain the substrate at or below a desired temperature.

    摘要翻译： 公开了一种能够监测和/或调节衬底（例如掩模或掩模版）的温度的系统和方法。 一个或多个温度传感器与衬底相关联以在曝光源曝光期间检测衬底温度。 所感测的温度用于控制曝光的一个或多个工艺参数，以帮助将衬底维持在或低于所需温度。

    Using localized ionizer to reduce electrostatic charge from wafer and mask
    4.
    发明授权
    Using localized ionizer to reduce electrostatic charge from wafer and mask 有权
    使用局部电离器来减少晶片和掩模的静电电荷

    公开(公告)号：US06507474B1

    公开(公告)日：2003-01-14

    申请号：US09597126

    申请日：2000-06-19

    申请人： Bhanwar Singh ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Bryan K. Choo ,  Bharath Rangarajan

    发明人： Bhanwar Singh ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Bryan K. Choo ,  Bharath Rangarajan

    IPC分类号： H01T2300

    CPC分类号： G03F7/70616 ,  G03F7/70941

    摘要： One aspect of the present invention elates to a method of reducing electrostatic charges on a patterned photoresist to improve evaluation of the developed photoresist, involving the steps of evaluating the patterned photoresist to determine if electrostatic charges exist thereon; positioning an ionizer near the patterned photoresist, the ionizer generating ions thereby reducing the electrostatic charges on the patterned photoresist; and evaluating the patterned photoresist with an electron beam. Another aspect of the present invention relates to a system for reducing electrostatic charges on a patterned photoresist, containing a charge sensor for determining if electrostatic charges exist on the patterned photoresist and measuring the electrostatic charges; an ionizer positioned near the patterned photoresist having electrostatic charges thereon for reducing the electrostatic charges on the patterned photoresist; a controller for setting at least one of time of ion generation and amount of ion generation by the ionizer, the controller coupled to the charge sensor and the ionizer; and a scanning electron microscope or an atomic force microscope for evaluating the patterned photoresist having reduced electrostatic charges thereon with an electron beam.

    摘要翻译： 本发明的一个方面是提供减少图案化光致抗蚀剂上的静电电荷以改进对显影光致抗蚀剂的评估的方法，包括评估图案化光致抗蚀剂以确定静电电荷是否存在于其中的步骤; 在图案化的光致抗蚀剂附近定位电离器，离子发生器产生离子，从而减少图案化光致抗蚀剂上的静电电荷; 并用电子束评估图案化的光致抗蚀剂。 本发明的另一方面涉及一种用于减少图案化光致抗蚀剂上的静电电荷的系统，其包含用于确定图案化光致抗蚀剂上是否存在静电电荷并测量静电电荷的电荷传感器; 位于图案化的光致抗蚀剂附近的电离器，其上具有静电电荷，用于减少图案化光致抗蚀剂上的静电电荷; 用于设置离子发生时间和离子发生量中的至少一个的控制器，耦合到电荷传感器和离子发生器的控制器; 以及扫描电子显微镜或原子力显微镜，用于用电子束评估其上具有降低的静电电荷的图案化光致抗蚀剂。

    Method and system to monitor and control electro-static discharge
    9.
    发明授权
    Method and system to monitor and control electro-static discharge 失效
    监测和控制静电放电的方法和系统

    公开(公告)号：US06741445B1

    公开(公告)日：2004-05-25

    申请号：US10050458

    申请日：2002-01-16

    申请人： Khoi A. Phan ,  Bhanwar Singh ,  Bharath Rangarajan ,  Ramkumar Subramanian

    发明人： Khoi A. Phan ,  Bhanwar Singh ,  Bharath Rangarajan ,  Ramkumar Subramanian

    IPC分类号： H01T2300

    CPC分类号： H01L21/67253

    摘要： A system and methodology is provided for monitoring and controlling static charge during wafer and mask fabrication. The static charge on a target device is monitored. If the static charge becomes too high, corrective actions are taken to reduce the static charge. An antistatic solution is dispensed on the target device. The system and methodology provided reduce damage resulting from electrostatic discharge during fabrication. The system and methodology also reduce delays during fabrication by automatically controlling static charge without the need for manual intervention.

    摘要翻译： 提供了一种用于在晶片和掩模制造期间监测和控制静电荷的系统和方法。 监视目标设备上的静电荷。 如果静电荷过高，则采取纠正措施减少静电。 抗静电溶液分配在目标装置上。 所提供的系统和方法减少了制造过程中静电放电造成的损坏。 该系统和方法还通过自动控制静电而减少制造过程中的延迟，而无需人工干预。

    Sensor to predict void free films using various grating structures and characterize fill performance
    10.
    发明授权
    Sensor to predict void free films using various grating structures and characterize fill performance 失效
    传感器预测使用各种光栅结构的无空隙膜，并表征填充性能

    公开(公告)号：US06684172B1

    公开(公告)日：2004-01-27

    申请号：US10034165

    申请日：2001-12-27

    申请人： Ramkumar Subramanian ,  Steven C. Avanzino ,  Christopher F. Lyons ,  Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Cyrus E. Tabery

    发明人： Ramkumar Subramanian ,  Steven C. Avanzino ,  Christopher F. Lyons ,  Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Cyrus E. Tabery

    IPC分类号： G01L2500

    CPC分类号： C23C16/52 ,  C23C14/547 ,  C23C18/1675 ,  C25D21/12 ,  H01L21/76877

    摘要： One aspect of the invention relates to a metal fill process and systems therefor involving providing a standard calibration wafer having a plurality of fill features of known dimensions in a metalization tool; depositing a metal material over the standard calibration wafer; monitoring the deposition of metal material using a sensor system, the sensor system operable to measure one or more fill process parameters and to generate fill process data; controlling the deposition of metal material to minimize void formation using a control system wherein the control system receives fill process data from the sensor system and analyzes the fill process data to generate a feed-forward control data operative to control the metalization tool; and depositing metal material over a production wafer in the metalization tool using the fill process data generated by the sensor system and the control system. The invention further relates to tool characterization processes and systems therefor.

    摘要翻译： 本发明的一个方面涉及一种金属填充方法及其系统，其涉及在金属化工具中提供具有已知尺寸的多个填充特征的标准校准晶片; 在标准校准晶片上沉积金属材料; 使用传感器系统监测金属材料的沉积，所述传感器系统可操作以测量一个或多个填充过程参数并产生填充过程数据; 控制金属材料的沉积以最小化使用控制系统的空隙形成，其中控制系统从传感器系统接收填充过程数据并分析填充过程数据以产生可操作以控制金属化工具的前馈控制数据; 以及使用由传感器系统和控制系统产生的填充过程数据在金属化工具中的生产晶片上沉积金属材料。 本发明还涉及其工具表征过程及其系统。