公开(公告)号：US20130260555A1

公开(公告)日：2013-10-03

申请号：US13786644

申请日：2013-03-06

申请人： Bhushan N. ZOPE ,  Avgerinos V. GELATOS ,  Bo ZHENG ,  Yu LEI ,  Xinyu FU ,  Srinivas GANDIKOTA ,  Sang-Ho YU ,  Mathew ABRAHAM

发明人： Bhushan N. ZOPE ,  Avgerinos V. GELATOS ,  Bo ZHENG ,  Yu LEI ,  Xinyu FU ,  Srinivas GANDIKOTA ,  Sang-Ho YU ,  Mathew ABRAHAM

IPC分类号： H01L21/48

CPC分类号： H01L21/76879 ,  H01L21/02057 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/4846 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/5329 ,  H01L29/66621

摘要： Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

摘要翻译： 提供了在半导体器件的接触结构中沉积接触金属层的方法。 在一个实施例中，提供了一种在半导体器件中沉积用于形成接触结构的接触金属层的方法。 该方法包括进行循环金属沉积工艺，以将接触金属层沉积在衬底上并退火设置在衬底上的接触金属层。 循环金属沉积工艺包括将衬底暴露于沉积前体气体混合物以将接触金属层的一部分沉积在衬底上，将接触金属层的该部分暴露于等离子体处理工艺，并重复将衬底暴露于 沉积前体气体混合物，并将接触金属层的部分暴露于等离子体处理工艺，直到实现接触金属层的预定厚度。

公开(公告)号：US20110117680A1

公开(公告)日：2011-05-19

申请号：US12948089

申请日：2010-11-17

申请人： Vicky SVIDENKO ,  Mathew ABRAHAM ,  Serkan KINCAL

发明人： Vicky SVIDENKO ,  Mathew ABRAHAM ,  Serkan KINCAL

IPC分类号： H01L21/66

CPC分类号： H01L21/67259 ,  C23C16/44 ,  C23C16/4401 ,  C23C16/52 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/048 ,  H01L31/206 ,  H02S50/15 ,  Y02E10/50 ,  Y02P70/521

摘要： Embodiments of the present invention generally provide a method for detecting the position of a substrate within a processing chamber. Embodiments of the present invention are particularly useful for the detection of a mis-positioned solar cell substrate during photoabsorber layer deposition processes within a solar cell production line. Reflected power is measured during processing of a substrate and communicated to a system controller. The system controller compares the measured reflected power with an established range of reflected power. If the measured reflected power is substantially out of range, the system controller signals for the chamber to be taken offline for inspection, maintenance, and/or repair. The system controller may further divert the flow of substrates within the production line around the offline chamber without shutting down the entire solar cell production line.

摘要翻译： 本发明的实施例通常提供一种用于检测处理室内的衬底的位置的方法。 本发明的实施例对于在太阳能电池生产线内的光吸收层沉积工艺期间检测位错太阳能电池基板特别有用。 在处理基板期间测量反射功率并传送到系统控制器。 系统控制器将测得的反射功率与建立的反射功率范围进行比较。 如果测量的反射功率基本上超出范围，则系统控制器将信号通知室被离线以进行检查，维护和/或维修。 系统控制器可以进一步转移生产线内的基板在离线室周围的流动，而不关闭整个太阳能电池生产线。