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    High efficiency light emitting diode with distributed Bragg reflector
    1.
    发明授权
    High efficiency light emitting diode with distributed Bragg reflector 失效
    具有分布式布拉格反射器的高效率发光二极管

    公开(公告)号：US06057562A

    公开(公告)日：2000-05-02

    申请号：US840914

    申请日：1997-04-18

    申请人： Biing-Jye Lee ,  Ming-Jiunn Jou ,  Jacob C. Tarn ,  Chiung-Sheng Shyu

    发明人： Biing-Jye Lee ,  Ming-Jiunn Jou ,  Jacob C. Tarn ,  Chiung-Sheng Shyu

    IPC分类号： H01L33/02 ,  H01L33/14 ,  H01L33/30 ,  H01L33/00

    CPC分类号： H01L33/30 ,  H01L33/02 ,  H01L33/14 ,  H01L33/145

    摘要： A structure of a light emitting diode (LED) having high brightness is disclosed. This LED includes a substrate on a first electrode, a first cladding layer of a first conductivity type on the substrate, an active layer on the first cladding layer, a second cladding layer of a second conductivity type on the active layer, a window layer of the second conductivity type on the second cladding layer, wherein the electrical resistivity of the window layer is less than that of the second cladding layer, a contact layer of the second conductivity type on the window layer for providing ohmic contact, and a conductive transparent oxide layer on the contact layer, wherein the electrical resistivity of the conductive transparent oxide layer is less than that of the window layer and the contact layer.

    摘要翻译： 公开了具有高亮度的发光二极管（LED）的结构。 该LED包括第一电极上的基板，基板上的第一导电类型的第一包层，第一包层上的有源层，有源层上的第二导电类型的第二包层，窗口层 所述第二包层的第二导电类型，其中所述窗口层的电阻率小于所述第二包层的电阻率，所述第二导电类型的接触层在窗口层上用于提供欧姆接触，以及导电透明氧化物 层，其中导电透明氧化物层的电阻率小于窗口层和接触层的电阻率。

    Light emitting diode having transparent conductive oxide formed on the contact layer
    2.
    发明授权
    Light emitting diode having transparent conductive oxide formed on the contact layer 失效
    在接触层上形成透明导电氧化物的发光二极管

    公开(公告)号：US5789768A

    公开(公告)日：1998-08-04

    申请号：US880590

    申请日：1997-06-23

    申请人： Biing-Jye Lee ,  Ming-Jiunn Jou ,  Jacob C. Tarn

    发明人： Biing-Jye Lee ,  Ming-Jiunn Jou ,  Jacob C. Tarn

    IPC分类号： H01L33/02 ,  H01L33/10 ,  H01L33/14 ,  H01L33/30 ,  H01L33/42 ,  H01L33/00

    CPC分类号： H01L33/42 ,  H01L33/02 ,  H01L33/30 ,  H01L33/10 ,  H01L33/14 ,  H01L33/145

    摘要： A structure of a light emitting diode (LED) having high brightness is disclosed. This LED includes a substrate formed on a first electrode, a first cladding layer of a first conductivity type formed on the substrate, an active layer formed on the first cladding layer, a second cladding layer of a second conductivity type formed on the active layer, a window layer of the second conductivity type formed on the second cladding layer, wherein the electrical resistivity of the window layer is less than the electrical resistivity of the second cladding layer, a contact layer of the second conductivity type formed on the window layer for providing ohmic contact, a conductive transparent oxide layer formed on the contact layer, and a current blocking region formed in the LED. The current blocking region is approximately aligned with a second electrode, and can be the contact layer having a hollow portion therein, an insulating region formed on the contact layer, an ion implanted region in the contact layer and the window layer, or a diffused region in the contact layer and the window layer.

    摘要翻译： 公开了具有高亮度的发光二极管（LED）的结构。 该LED包括形成在第一电极上的基板，在基板上形成的第一导电类型的第一包层，形成在第一包层上的有源层，形成在有源层上的第二导电类型的第二包层， 形成在第二包覆层上的第二导电类型的窗口层，其中窗口层的电阻率小于第二包层的电阻率，第二导电类型的接触层形成在窗口层上用于提供 欧姆接触，形成在接触层上的导电透明氧化物层和形成在LED中的电流阻挡区域。 电流阻挡区域与第二电极大致对准，并且可以是其中具有中空部分的接触层，形成在接触层上的绝缘区域，接触层中的离子注入区域和窗口层，或扩散区域 在接触层和窗口层中。

    High brightness light emitting diode having a layer of distributed contacts
    3.
    发明授权
    High brightness light emitting diode having a layer of distributed contacts 有权
    具有分布接触层的高亮度发光二极管

    公开(公告)号：US06552367B1

    公开(公告)日：2003-04-22

    申请号：US09680416

    申请日：2000-10-06

    申请人： Min-Hsun Hsieh ,  Ming-Jiunn Jou ,  Biing-Jye Lee

    发明人： Min-Hsun Hsieh ,  Ming-Jiunn Jou ,  Biing-Jye Lee

    IPC分类号： H01L3300

    CPC分类号： H01L33/387 ,  H01L33/02 ,  H01L33/40 ,  H01L33/405

    摘要： A high brightness light emitting diode having a distributed contact area comprising a first electrode; a semiconductor substrate formed on the first electrode; a first cladding layer of a first conductivity type formed on the semiconductor substrate; an active layer formed on the first cladding layer; a second cladding layer of a second conductivity type formed on the active layer; a window layer of a second conductivity type formed on the second cladding layer; a distributed contact area in a predetermined pattern formed on the window layer; a transparent conductive layer formed over the distributed contact area and the window layer, the transparent conductive layer being in ohmic contact with the distributed contact area and a Shottky barrier being formed between the transparent conductive layer and the window layer; and a second electrode formed on the transparent conductive layer.

    摘要翻译： 一种具有分布式接触区域的高亮度发光二极管，包括第一电极; 形成在所述第一电极上的半导体衬底; 形成在半导体衬底上的第一导电类型的第一包层; 形成在所述第一包层上的有源层; 形成在有源层上的第二导电类型的第二覆层; 形成在第二包覆层上的第二导电类型的窗口层; 形成在窗口层上的预定图案的分布式接触区域; 形成在所述分布接触区域和所述窗口层上的透明导电层，所述透明导电层与所述分布接触区域欧姆接触，并且在所述透明导电层和所述窗口层之间形成肖特基势垒; 以及形成在所述透明导电层上的第二电极。

    Light emitting diode
    4.
    发明授权
    Light emitting diode 失效
    发光二极管

    公开(公告)号：US5300791A

    公开(公告)日：1994-04-05

    申请号：US953659

    申请日：1992-09-29

    申请人： Tzer-Perng Chen ,  Chin-Yuan Chen ,  Jyi-Ren Deng ,  Ming-Jiunn Jou ,  Biing-Jye Lee ,  Jenn-Yu Kao

    发明人： Tzer-Perng Chen ,  Chin-Yuan Chen ,  Jyi-Ren Deng ,  Ming-Jiunn Jou ,  Biing-Jye Lee ,  Jenn-Yu Kao

    IPC分类号： H01L33/02 ,  H01L33/14 ,  H01L33/30 ,  H01L33/00

    CPC分类号： H01L33/30 ,  H01L33/02 ,  H01L33/14

    摘要： A light emitting diode is provided with a window layer of ZnSSe semiconductor material having a second conductivity type. The second conductivity type ZnSSe window layer has a low electrical resistivity so that it can be used as a current spreading layer, and a bandgap higher than that of the active layer so that it is transparent to light emitted from the active layers. The second conductivity type ZnSSe window layer can be doped with a donor concentration of more than 10.sup.18 cm.sup.-3. Furthermore, its lattice constant is close to that of the active layers and confining layers so that deterioration in optical characteristic due to lattice mismatch is minimized.

    摘要翻译： 发光二极管设置有具有第二导电类型的ZnSSe半导体材料的窗口层。 第二导电型ZnSSe窗层具有低电阻率，使得其可以用作电流扩散层，并且具有比有源层高的带隙，使得其对于从有源层发射的光是透明的。 第二导电型ZnSSe窗口层可以以大于1018cm-3的供体浓度掺杂。 此外，其晶格常数接近有源层和限制层的晶格常数，使得由于晶格失配导致的光学特性的劣化被最小化。

    High-brightness light emitting diode
    6.
    发明授权
    High-brightness light emitting diode 有权
    高亮度发光二极管

    公开(公告)号：US06225648B1

    公开(公告)日：2001-05-01

    申请号：US09352498

    申请日：1999-07-09

    申请人： Min-Hsun Hsieh ,  Ming-Jiunn Jou ,  Biing-Jye Lee

    发明人： Min-Hsun Hsieh ,  Ming-Jiunn Jou ,  Biing-Jye Lee

    IPC分类号： H01L3300

    CPC分类号： H01L33/02 ,  H01L33/14 ,  H01L33/145

    摘要： A high-brightness light emitting diode is provided. It comprises a first electrode; a semiconductor substrate formed on the first electrode; a first cladding layer of a first conductivity type formed on the semiconductor substrate; an active layer formed on the first cladding layer; a second cladding layer of a second conductivity type formed on the active layer; a window layer of the second conductivity type formed on the second cladding layer and having an upper surface and a bottom surface, wherein a groove of a predetermined shape is formed at a predetermined location and substantially extends from the upper surface to the bottom surface so that the window layer is substantially separated into a first window portion and a second window portion and the current in the first window portion substantially cannot flow into the second window portion; a contact layer formed on the first window portion; a transparent conductive layer consisting of a first conductive portion and a second conductive portion, wherein the first conductive portion is formed on the contact layer and an ohmic contact is formed between the first conductive portion and the contact layer, the second conductive portion contacts with the surface of the groove and the upper surface of the second window portion, and a Schottky barrier is formed between the conductive portion and the window layer; and a second electrode formed on the conductive layer at a location over the second window portion.

    摘要翻译： 提供了一种高亮度发光二极管。 它包括第一电极; 形成在所述第一电极上的半导体衬底; 形成在半导体衬底上的第一导电类型的第一包层; 形成在所述第一包层上的有源层; 形成在有源层上的第二导电类型的第二覆层; 第二导电类型的窗口层形成在第二包层上并具有上表面和底表面，其中预定形状的沟槽形成在预定位置并且基本上从上表面延伸到底表面，使得 窗口层基本上分离成第一窗口部分和第二窗口部分，并且第一窗口部分中的电流基本上不能流入第二窗口部分; 形成在所述第一窗口部分上的接触层; 由第一导电部分和第二导电部分组成的透明导电层，其中所述第一导电部分形成在所述接触层上，并且在所述第一导电部分和所述接触层之间形成欧姆接触，所述第二导电部分与所述第二导电部分接触， 沟槽的表面和第二窗口部分的上表面，并且在导电部分和窗口层之间形成肖特基势垒; 以及在所述第二窗口部分上方的位置处形成在所述导电层上的第二电极。

    Light-emitting diodes and method of manufacturing the same
    8.
    发明授权
    Light-emitting diodes and method of manufacturing the same 失效
    发光二极管及其制造方法

    公开(公告)号：US5717226A

    公开(公告)日：1998-02-10

    申请号：US715889

    申请日：1996-09-18

    申请人： Biing-Jye Lee ,  Chuan-Ming Chang ,  Ming-Jiunn Jou

    发明人： Biing-Jye Lee ,  Chuan-Ming Chang ,  Ming-Jiunn Jou

    IPC分类号： H01L33/14 ,  H01L33/30 ,  H01L33/42 ,  H01L27/15 ,  H01L31/12 ,  H01L33/00

    CPC分类号： H01L33/42 ,  H01L33/145 ,  H01L33/30

    摘要： A surface-emitting AlGaInP LED is disclosed. The manufacturing method comprises the steps of: (i) forming a buffer layer, a first type of AlGaInP cladding layer, a AlGaInP active layer, a second type of AlGaInP cladding layer, and a second type of contact layer on a first type of GaAs substrate; (ii) forming a conductive transparent electrode; (iii) by using photolithography and etching techniques, a first photoresist layer with a hole is formed on the middle above the transparent electrode; (iv) etching the portion of the transparent electrode and the second type of GaAs layer not covered by the photoresist layer until the second type of AlGaInP cladding layer; (v) forming a metal layer on the hole being etched to form a Schottky barrier; (vi) thermal annealed to thicken an native oxide formed between the metal layer and the second type of AlGaInP cladding layer to increase the Schottky barrier level; (vii) removing the first photoresist layer, and coating a back electrode on an opposite surface of the first type of GaAs substrate; (viii) employing the photolithography and etching techniques and a mask being used in the photolithography of step (iii) to form a second photoresist layer with a hole at the center thereof; and (ix) forming a second metal over the metal layer being formed on the second type of AlGaInP cladding layer at step (v). The Schottky barrier and the native oxide serve as a current-blocking layer, and the luminance of a light-emitting diode is improved.

    摘要翻译： 公开了一种表面发射AlGaInP LED。 该制造方法包括以下步骤：（i）在第一种类型的GaAs上形成缓冲层，第一种AlGaInP包覆层，AlGaInP有源层，第二类型的AlGaInP包覆层和第二类型的接触层 基质; （ii）形成导电透明电极; （iii）通过使用光刻和蚀刻技术，在透明电极上的中间形成具有孔的第一光致抗蚀剂层; （iv）蚀刻透明电极的部分和未被光致抗蚀剂层覆盖的第二类型的GaAs层，直到第二类型的AlGaInP包层; （v）在被蚀刻的孔上形成金属层以形成肖特基势垒; （vi）热退火以增强形成在金属层和第二类型的AlGaInP包层之间的自然氧化物，以增加肖特基势垒层; （vii）去除第一光致抗蚀剂层，并在第一类型GaAs衬底的相对表面上涂覆背电极; （viii）使用光刻和蚀刻技术，并且在步骤（iii）的光刻中使用掩模以在其中心形成具有孔的第二光致抗蚀剂层; 以及（ix）在步骤（v）在所述第二类型的AlGaInP包层上形成在所述金属层上形成的第二金属。 肖特基势垒和天然氧化物用作电流阻挡层，并且改善了发光二极管的亮度。