公开(公告)号：US20070006113A1

公开(公告)日：2007-01-04

申请号：US11173394

申请日：2005-06-30

申请人： Bin Hu ,  Vivek Singh ,  Bikram Baidya ,  Kenny Toh ,  Srinivas Bollepalli ,  Yan Borodovsky

发明人： Bin Hu ,  Vivek Singh ,  Bikram Baidya ,  Kenny Toh ,  Srinivas Bollepalli ,  Yan Borodovsky

IPC分类号： G06F17/50

CPC分类号： G03F1/36

摘要： A pixelated photolithography mask is optimized for high resolution microelectronic processing. In one embodiment, the invention includes synthesizing a pixelated photolithography mask, applying a pixel flipping function to the mask, comparing the resulting mask to a desired result, and synthesizing an optimized pixelated binary photolithography mask using the function.

摘要翻译： 像素化光刻掩模被优化用于高分辨率微电子处理。 在一个实施例中，本发明包括合成像素化光刻掩模，向掩模施加像素翻转函数，将所得到的掩模与期望的结果进行比较，以及使用该功能合成优化的像素化二值光刻掩模。

公开(公告)号：US20070077500A1

公开(公告)日：2007-04-05

申请号：US11242166

申请日：2005-09-30

申请人： Bikram Baidya ,  Vivek Singh ,  Yan Borodovsky

发明人： Bikram Baidya ,  Vivek Singh ,  Yan Borodovsky

IPC分类号： G03F1/00

CPC分类号： G03F1/36

摘要： The present invention discloses a mask including: a first region near a corner of a feature, the first region including a first element, the first element being transparent to a light, the first element having a side that is smaller than a wavelength of said light; a second region near the corner of the feature, the second region including a second element, the second element being transparent to the light, the second element having a side that is smaller than the wavelength of the light; and a third region near the corner of the feature, the third region including a third element, the third element being opaque to the light, the third element having a side that is smaller than the wavelength of the light.

摘要翻译： 本发明公开了一种掩模，其包括：靠近特征角的第一区域，所述第一区域包括第一元件，所述第一元件对于光是透明的，所述第一元件具有小于所述光的波长的一侧 ; 靠近所述特征角的第二区域，所述第二区域包括第二元件，所述第二元件对于所述光是透明的，所述第二元件具有小于所述光的波长的一侧; 以及靠近所述特征角的第三区域，所述第三区域包括第三元件，所述第三元件对于所述光不透明，所述第三元件具有小于所述光的波长的一侧。

公开(公告)号：US20090148779A1

公开(公告)日：2009-06-11

申请号：US12317196

申请日：2008-12-19

申请人： Bikram Baidya ,  Vivek Singh ,  Yan Borodovsky

发明人： Bikram Baidya ,  Vivek Singh ,  Yan Borodovsky

IPC分类号： G03F1/00 ,  G06F17/50

CPC分类号： G03F1/36

摘要： The present invention discloses a mask including: a first region near a corner of a feature, the first region including a first element, the first element being transparent to a light, the first element having a side that is smaller than a wavelength of said light; a second region near the corner of the feature, the second region including a second element, the second element being transparent to the light, the second element having a side that is smaller than the wavelength of the light; and a third region near the corner of the feature, the third region including a third element, the third element being opaque to the light, the third element having a side that is smaller than the wavelength of the light.

公开(公告)号：US07892706B2

公开(公告)日：2011-02-22

申请号：US12317196

申请日：2008-12-19

申请人： Bikram Baidya ,  Vivek Singh ,  Yan Borodovsky

发明人： Bikram Baidya ,  Vivek Singh ,  Yan Borodovsky

IPC分类号： G03F1/00

CPC分类号： G03F1/36

摘要： The present invention discloses a mask including: a first region near a corner of a feature, the first region including a first element, the first element being transparent to a light, the first element having a side that is smaller than a wavelength of said light; a second region near the corner of the feature, the second region including a second element, the second element being transparent to the light, the second element having a side that is smaller than the wavelength of the light; and a third region near the corner of the feature, the third region including a third element, the third element being opaque to the light, the third element having a side that is smaller than the wavelength of the light.

摘要翻译： 本发明公开了一种掩模，其包括：靠近特征角的第一区域，所述第一区域包括第一元件，所述第一元件对于光是透明的，所述第一元件具有小于所述光的波长的一侧 ; 靠近所述特征角的第二区域，所述第二区域包括第二元件，所述第二元件对于所述光是透明的，所述第二元件具有小于所述光的波长的一侧; 以及靠近所述特征角的第三区域，所述第三区域包括第三元件，所述第三元件对于所述光不透明，所述第三元件具有小于所述光的波长的一侧。

公开(公告)号：US07611806B2

公开(公告)日：2009-11-03

申请号：US11242166

申请日：2005-09-30

申请人： Bikram Baidya ,  Vivek Singh ,  Yan Borodovsky

发明人： Bikram Baidya ,  Vivek Singh ,  Yan Borodovsky

IPC分类号： G03F1/00

CPC分类号： G03F1/36

摘要： The present invention discloses a mask including: a first region near a corner of a feature, the first region including a first element, the first element being transparent to a light, the first element having a side that is smaller than a wavelength of said light; a second region near the corner of the feature, the second region including a second element, the second element being transparent to the light, the second element having a side that is smaller than the wavelength of the light; and a third region near the corner of the feature, the third region including a third element, the third element being opaque to the light, the third element having a side that is smaller than the wavelength of the light.

摘要翻译： 本发明公开了一种掩模，其包括：靠近特征角的第一区域，所述第一区域包括第一元件，所述第一元件对于光是透明的，所述第一元件具有小于所述光的波长的一侧 ; 靠近所述特征角的第二区域，所述第二区域包括第二元件，所述第二元件对于所述光是透明的，所述第二元件具有小于所述光的波长的一侧; 以及靠近所述特征角的第三区域，所述第三区域包括第三元件，所述第三元件对于所述光不透明，所述第三元件具有小于所述光的波长的一侧。

公开(公告)号：US20110318672A1

公开(公告)日：2011-12-29

申请号：US12824037

申请日：2010-06-25

申请人： Shem Ogadhoh ,  Raguraman Venkatesan ,  Kevin J. Hooker ,  Sungwon Kim ,  Bin Hu ,  Vivek Singh ,  Bikram Baidya ,  Prasad Narendra Atkar ,  Seongtae Jeong

发明人： Shem Ogadhoh ,  Raguraman Venkatesan ,  Kevin J. Hooker ,  Sungwon Kim ,  Bin Hu ,  Vivek Singh ,  Bikram Baidya ,  Prasad Narendra Atkar ,  Seongtae Jeong

IPC分类号： G03F1/00 ,  G06F17/50

CPC分类号： G03F1/36 ,  G03F1/68 ,  G06F17/50

摘要： Described herein is mask design and modeling for a set of masks to be successively imaged to print a composite pattern on a substrate, such as a semiconductor wafer. Further described herein is a method of double patterning a substrate with the set of masks. Also described herein is a method of correcting a drawn pattern of one of the mask levels based on a predicted pattern contour of the other of the mask levels. Also described herein is a method of modeling a resist profile contour for a mask level in which photoresist is applied onto a inhomogeneous substrate, as well as method of predicting a resist profile of a Boolean operation of two masks.

摘要翻译： 这里描述的是要连续成像以在诸如半导体晶片的衬底上打印复合图案的一组掩模的掩模设计和建模。 本文进一步描述的是使用该组掩模对衬底进行双重图案化的方法。 这里还描述了一种基于掩模级别中的另一个的预测图案轮廓来校正掩模级中的一个的绘制图案的方法。 本文还描述了一种对光致抗蚀剂施加到非均匀衬底上的掩模级的抗蚀剂轮廓轮廓建模方法，以及预测两个掩模的布尔运算的抗蚀剂轮廓的方法。

公开(公告)号：US08404403B2

公开(公告)日：2013-03-26

申请号：US12824037

申请日：2010-06-25

申请人： Shem Ogadhoh ,  Raguraman Venkatesan ,  Kevin J. Hooker ,  Sungwon Kim ,  Bin Hu ,  Vivek Singh ,  Bikram Baidya ,  Prasad Narendra Atkar ,  Seongtae Jeong

发明人： Shem Ogadhoh ,  Raguraman Venkatesan ,  Kevin J. Hooker ,  Sungwon Kim ,  Bin Hu ,  Vivek Singh ,  Bikram Baidya ,  Prasad Narendra Atkar ,  Seongtae Jeong

IPC分类号： G03F1/68

CPC分类号： G03F1/36 ,  G03F1/68 ,  G06F17/50

摘要： Described herein is mask design and modeling for a set of masks to be successively imaged to print a composite pattern on a substrate, such as a semiconductor wafer. Further described herein is a method of double patterning a substrate with the set of masks. Also described herein is a method of correcting a drawn pattern of one of the mask levels based on a predicted pattern contour of the other of the mask levels. Also described herein is a method of modeling a resist profile contour for a mask level in which photoresist is applied onto a inhomogeneous substrate, as well as method of predicting a resist profile of a Boolean operation of two masks.

摘要翻译： 这里描述的是要连续成像以在诸如半导体晶片的衬底上打印复合图案的一组掩模的掩模设计和建模。 本文进一步描述的是使用该组掩模对衬底进行双重图案化的方法。 这里还描述了一种基于掩模级别中的另一个的预测图案轮廓来校正掩模级中的一个的绘制图案的方法。 本文还描述了一种对光致抗蚀剂施加到非均匀衬底上的掩模级的抗蚀剂轮廓轮廓建模方法，以及预测两个掩模的布尔运算的抗蚀剂轮廓的方法。

公开(公告)号：US08778605B2

公开(公告)日：2014-07-15

申请号：US13762083

申请日：2013-02-07

申请人： Shem Ogadhoh ,  Raguraman Venkatesan ,  Kevin J. Hooker ,  Sungwon Kim ,  Bin Hu ,  Vivek Singh ,  Bikram Baidya ,  Prasad Narendra Atkar ,  Seongtae Jeong

发明人： Shem Ogadhoh ,  Raguraman Venkatesan ,  Kevin J. Hooker ,  Sungwon Kim ,  Bin Hu ,  Vivek Singh ,  Bikram Baidya ,  Prasad Narendra Atkar ,  Seongtae Jeong

IPC分类号： G03F1/68 ,  G03F1/36

CPC分类号： G03F1/36 ,  G03F1/68 ,  G06F17/50

摘要： Described herein is mask design and modeling for a set of masks to be successively imaged to print a composite pattern on a substrate, such as a semiconductor wafer. Further described herein is a method of double patterning a substrate with the set of masks. Also described herein is a method of correcting a drawn pattern of one of the mask levels based on a predicted pattern contour of the other of the mask levels. Also described herein is a method of modeling a resist profile contour for a mask level in which photoresist is applied onto a inhomogeneous substrate, as well as method of predicting a resist profile of a Boolean operation of two masks.

摘要翻译： 这里描述的是要连续成像以在诸如半导体晶片的衬底上打印复合图案的一组掩模的掩模设计和建模。 本文进一步描述的是使用该组掩模对衬底进行双重图案化的方法。 这里还描述了一种基于掩模级别中的另一个的预测图案轮廓来校正掩模级中的一个的绘制图案的方法。 本文还描述了一种对光致抗蚀剂施加到非均匀衬底上的掩模级的抗蚀剂轮廓轮廓建模方法，以及预测两个掩模的布尔运算的抗蚀剂轮廓的方法。

公开(公告)号：US07512926B2

公开(公告)日：2009-03-31

申请号：US11242165

申请日：2005-09-30

申请人： Bin Hu ,  Vivek Singh ,  Yan Borodovsky

发明人： Bin Hu ,  Vivek Singh ,  Yan Borodovsky

IPC分类号： G06F17/50 ,  G03G13/00 ,  G03H3/00

CPC分类号： G03F7/70283 ,  G03F1/32 ,  G03F1/36 ,  G03F7/70433 ,  G03F7/705

摘要： The present invention discloses a method of designing a set of two tiled masks, as well as, a mask including: a first tile, the first tile being transparent to a light, the first tile having a first characteristic linear dimension that is 15% or less of a wavelength of the light; a second tile, the second tile being transparent to the light, the second tile having a second characteristic linear dimension that is 15% or less of the wavelength of the light; and a third tile, the third tile being opaque to the light, the third tile having a third characteristic linear dimension that is 15% or less of the wavelength of the light.

公开(公告)号：US08122388B2

公开(公告)日：2012-02-21

申请号：US12316085

申请日：2008-12-09

申请人： Bin Hu ,  Vivek Singh ,  Yan Borodovsky

发明人： Bin Hu ,  Vivek Singh ,  Yan Borodovsky

IPC分类号： G06F17/50 ,  G03F1/00

CPC分类号： G03F7/70283 ,  G03F1/32 ,  G03F1/36 ,  G03F7/70433 ,  G03F7/705

摘要： The present invention discloses a method of designing a set of two tiled masks, as well as, a mask including: a first tile, the first tile being transparent to a light, the first tile having a first characteristic linear dimension that is 15% or less of a wavelength of the light; a second tile, the second tile being transparent to the light, the second tile having a second characteristic linear dimension that is 15% or less of the wavelength of the light; and a third tile, the third tile being opaque to the light, the third tile having a third characteristic linear dimension that is 15% or less of the wavelength of the light.