Strained-silicon device with different silicon thicknesses
    1.
    发明授权
    Strained-silicon device with different silicon thicknesses 有权
    具有不同硅厚度的应变硅器件

    公开(公告)号:US07417250B1

    公开(公告)日:2008-08-26

    申请号:US11151550

    申请日:2005-06-14

    CPC classification number: H01L21/823807 H01L29/1054

    Abstract: A method of manufacturing a semiconductor device includes providing a strained-silicon semiconductor layer over a silicon germanium layer, and partially removing a first portion of the strained-silicon layer. The strained-silicon layer includes the first portion and a second portion, and a thickness of the second portion is greater than a thickness of the first portion. Initially, the first and second portions of the strained-silicon layer initially can have the same thickness. A p-channel transistor is formed over the first portion, and a n-channel transistor is formed over the second portion. A semiconductor device is also disclosed.

    Abstract translation: 制造半导体器件的方法包括在硅锗层上提供应变硅半导体层,并部分去除应变硅层的第一部分。 应变硅层包括第一部分和第二部分,第二部分的厚度大于第一部分的厚度。 最初,应变硅层的第一和第二部分最初可以具有相同的厚度。 在第一部分上形成p沟道晶体管,并且在第二部分上形成n沟道晶体管。 还公开了一种半导体器件。

    Low temperature solid-phase epitaxy fabrication process for MOS devices built on strained semiconductor substrate
    2.
    发明授权
    Low temperature solid-phase epitaxy fabrication process for MOS devices built on strained semiconductor substrate 有权
    构建在应变半导体衬底上的MOS器件的低温固相外延制造工艺

    公开(公告)号:US06689671B1

    公开(公告)日:2004-02-10

    申请号:US10151946

    申请日:2002-05-22

    Abstract: A method of manufacturing a semiconductor device, comprising steps of: (a) providing a semiconductor substrate comprising a strained lattice semiconductor layer at an upper surface thereof and having a pre-selected amount of lattice strain; (b) forming a device structure in the semiconductor substrate by a process comprising forming at least one amorphous region in at least one portion of the strained lattice semiconductor layer; and (c) thermal annealing at a minimum temperature sufficient to effect epitaxial re-crystallization of the at least one amorphous region to re-form a strained lattice semiconductor layer having substantially the pre-selected amount of lattice strain, whereby strain relaxation of the strained lattice semiconductor arising from thermal annealing is substantially eliminated or minimized.

    Abstract translation: 一种制造半导体器件的方法,包括以下步骤:(a)在其上表面提供包括应变晶格半导体层并具有预选量的晶格应变的半导体衬底;(b)在 半导体衬底,其包括在应变晶格半导体层的至少一部分中形成至少一个非晶区; 和(c)在足以实现所述至少一个非晶区域的外延再结晶的最小温度下的热退火以重新形成具有基本上预选量的晶格应变的应变晶格半导体层,由此应变松弛 基本消除或最小化由热退火产生的晶格半导体。

    Narrow width CMOS devices fabricated on strained lattice semiconductor substrates with maximized NMOS and PMOS drive currents
    3.
    发明授权
    Narrow width CMOS devices fabricated on strained lattice semiconductor substrates with maximized NMOS and PMOS drive currents 有权
    窄带CMOS器件制造在具有最大NMOS和PMOS驱动电流的应变晶格半导体衬底上

    公开(公告)号:US06764908B1

    公开(公告)日:2004-07-20

    申请号:US10173770

    申请日:2002-06-19

    CPC classification number: H01L29/1054 H01L21/823807

    Abstract: A method of manufacturing a semiconductor device comprises steps of: (a) providing a semiconductor substrate comprising an upper, tensilely strained lattice semiconductor layer and a lower, unstressed semiconductor layer; and (b) forming at least one MOS transistor on or within the tensilely strained lattice semiconductor layer, wherein the forming comprises a step of regulating the drive current of the at least one MOS transistor by adjusting the thickness of the tensilely strained lattice semiconductor layer. Embodiments include CMOS devices formed in substrates including a strained Si layer lattice-matched to a graded composition Si—Ge layer, wherein the thickness of the strained Si layer of each of the PMOS and NMOS transistors is adjusted to provide each transistor type with maximum drive current.

    Abstract translation: 一种制造半导体器件的方法包括以下步骤:(a)提供包括上部,拉伸应变晶格半导体层和下部未应力半导体层的半导体衬底; 和(b)在拉伸应变晶格半导体层上或其内形成至少一个MOS晶体管,其中所述形成包括通过调整拉伸应变晶格半导体层的厚度来调节所述至少一个MOS晶体管的驱动电流的步骤。 实施例包括形成在包括与渐变组合物Si-Ge层晶格匹配的应变Si层的衬底中的CMOS器件,其中调节每个PMOS晶体管和NMOS晶体管的应变Si层的厚度以提供每个晶体管类型的最大驱动 当前。

    Strained-silicon devices with different silicon thicknesses
    4.
    发明授权
    Strained-silicon devices with different silicon thicknesses 有权
    具有不同硅厚度的应变硅器件

    公开(公告)号:US06936506B1

    公开(公告)日:2005-08-30

    申请号:US10442975

    申请日:2003-05-22

    CPC classification number: H01L21/823807 H01L29/1054

    Abstract: A method of manufacturing a semiconductor device includes providing a strained-silicon semiconductor layer over a silicon germanium layer, and partially removing a first portion of the strained-silicon layer. The strained-silicon layer includes the first portion and a second portion, and a thickness of the second portion is greater than a thickness of the first portion. Initially, the first and second portions of the strained-silicon layer initially can have the same thickness. A p-channel transistor is formed over the first portion, and a n-channel transistor is formed over the second portion. A semiconductor device is also disclosed.

    Abstract translation: 制造半导体器件的方法包括在硅锗层上提供应变硅半导体层,并部分去除应变硅层的第一部分。 应变硅层包括第一部分和第二部分,第二部分的厚度大于第一部分的厚度。 最初,应变硅层的第一和第二部分最初可以具有相同的厚度。 在第一部分上形成p沟道晶体管,并且在第二部分上形成n沟道晶体管。 还公开了一种半导体器件。

    DAISY CHAIN DISTRIBUTION IN DATA CENTERS
    5.
    发明申请
    DAISY CHAIN DISTRIBUTION IN DATA CENTERS 有权
    数据中心的DAISY链分配

    公开(公告)号:US20150286441A1

    公开(公告)日:2015-10-08

    申请号:US14746582

    申请日:2015-06-22

    Abstract: A method and a system to provide daisy chain distribution in data centers are provided. A node identification module identifies three or more data nodes of a plurality of data nodes. The identification of three or more data nodes indicates that the respective data nodes are to receive a copy of a data file. A connection creation module to, using one or more processors, create communication connections between the three or more data nodes. The communication connections form a daisy chain beginning at a seeder data node of the three or more data nodes and ending at a terminal data node of the three or more data nodes.

    Abstract translation: 提供了一种在数据中心提供菊花链分发的方法和系统。 节点识别模块识别多个数据节点中的三个或多个数据节点。 三个或更多个数据节点的标识指示相应的数据节点要接收数据文件的副本。 连接创建模块,用于使用一个或多个处理器在三个或更多个数据节点之间建立通信连接。 通信连接形成从三个或更多个数据节点的播种器数据节点开始并且结束于三个或更多个数据节点的终端数据节点的菊花链。

    Method and device for data transmission
    6.
    发明授权
    Method and device for data transmission 有权
    用于数据传输的方法和装置

    公开(公告)号:US09143297B2

    公开(公告)日:2015-09-22

    申请号:US13977907

    申请日:2011-07-21

    CPC classification number: H04L5/0048 H04L5/0053

    Abstract: The present disclosure discloses a method and a device for transmitting data. The method includes: a UE determining, according to a preset rule, whether to transmit PUCCH and/or PUSCH and/or an SRS or not on a last symbol of a current subframe; the UE determining the PUCCH and/or the PUSCH to be transmitted on the current subframe according to availability of the last symbol of the current subframe for transmitting the PUCCH and/or the PUSCH; and the UE transmitting the PUCCH and/or the PUSCH on the current subframe and/or transmitting the SRS on the last symbol of the current subframe. In virtue of the present disclosure, it can be realized that a plurality of types of physical uplink signals/channels are simultaneously transmitted.

    Abstract translation: 本公开公开了一种用于发送数据的方法和装置。 该方法包括:UE根据预设规则确定是否在当前子帧的最后一个符号上发送PUCCH和/或PUSCH和/或SRS; UE根据用于发送PUCCH和/或PUSCH的当前子帧的最后一个符号的可用性来确定要在当前子帧上发送的PUCCH和/或PUSCH; 并且UE在当前子帧上发送PUCCH和/或PUSCH,和/或在当前子帧的最后一个符号上发送SRS。 凭借本公开,可以实现同时发送多种类型的物理上行链路信号/信道。

    Method and Apparatus for Sending Hybrid Automatic Repeat Request Acknowledge Information
    7.
    发明申请
    Method and Apparatus for Sending Hybrid Automatic Repeat Request Acknowledge Information 有权
    用于发送混合自动重传请求确认信息的方法和装置

    公开(公告)号:US20140369290A1

    公开(公告)日:2014-12-18

    申请号:US14369403

    申请日:2012-03-09

    Abstract: Provided are a method and apparatus for sending Hybrid Automatic Repeat Request Acknowledge (HARQ-ACK) information. The method includes: when a terminal employs a physical uplink control channel (PUCCH) format 3 to transmit HARQ-ACK information and the HARQ-ACK information is transmitted over a uplink physical shared channel (PUSCH), determining the number of downlink subframes for serving cells to feed back the HARQ-ACK information; determining the number of encoded modulated symbols required for sending the HARQ-ACK information according to the determined number of downlink subframes; and mapping the HARQ-ACK information to be sent to the PUSCH of a specified uplink subframe according to the number of encoded modulated symbols and sending the HARQ-ACK information. The technical solutions provided by the disclosure are applied to improve the performance of the HARQ-ACK information, and thus improve the data performance.

    Abstract translation: 提供了一种用于发送混合自动重传请求确认(HARQ-ACK)信息的方法和装置。 该方法包括:当终端采用物理上行链路控制信道(PUCCH)格式3来发送HARQ-ACK信息,并且通过上行链路物理共享信道(PUSCH)发送HARQ-ACK信息时,确定用于服务的下行链路子帧的数量 小区来反馈HARQ-ACK信息; 根据确定的下行链路子帧的数量确定发送HARQ-ACK信息所需的编码调制符号的数量; 以及根据编码的调制符号的数量映射要发送到指定上行链路子帧的PUSCH的HARQ-ACK信息,并发送HARQ-ACK信息。 应用本公开提供的技术方案来改进HARQ-ACK信息的性能,从而提高数据性能。

    Base Station, Terminal, System And Method For Data Transmitting In Time-Division Duplex System
    8.
    发明申请
    Base Station, Terminal, System And Method For Data Transmitting In Time-Division Duplex System 有权
    基站,终端,时分双工系统中数据传输的系统和方法

    公开(公告)号:US20140177491A1

    公开(公告)日:2014-06-26

    申请号:US14236164

    申请日:2011-12-21

    Inventor: Peng Hao Bo Dai Bin Yu

    Abstract: A base station, a terminal, a system and methods for performing data transmission in a Time Division Duplex (TDD) system are disclosed. One of the methods includes: the base station sending an uplink scheduling grant signaling to the terminal on a carrier m, and after receiving uplink data sent by the terminal through a Physical Uplink Shared Channel (PUSCH) on a carrier n, the base station sending an ACK/NACK feedback signaling corresponding to the PUSCH to the terminal on the carrier m; wherein, m≠n; a timing relationship between a subframe by which the base station sends the uplink scheduling grant signaling and/or the ACK/NACK feedback signaling and a subframe where the PUSCH is located is identical with a Hybrid Automatic Repeat Request (HARQ) timing relationship corresponding to an uplink/downlink configuration of the carrier m or the carrier n.

    Abstract translation: 公开了一种在时分双工(TDD)系统中执行数据传输的基站,终端,系统和方法。 方法之一包括:基站向载波m上的终端发送上行调度授权信令,在通过载波n上的物理上行链路共享信道(PUSCH)接收到终端发送的上行数据之后,基站发送 与载波m上的终端对应的PUSCH的ACK / NACK反馈信令; 其中,m≠n; 基站发送上行链路调度授权信令的子帧与/或ACK / NACK反馈信令的子帧与PUSCH所在的子帧之间的定时关系与对应于上行链路调度许可信令的混合自动重复请求(HARQ)定时关系相同 载波m或载波n的上行链路/下行链路配置。

    System and method for allocating sounding reference signal resource
    10.
    发明授权
    System and method for allocating sounding reference signal resource 有权
    用于分配探测参考信号资源的系统和方法

    公开(公告)号:US08718001B2

    公开(公告)日:2014-05-06

    申请号:US13497297

    申请日:2010-06-30

    CPC classification number: H04L1/0027 H04L5/0048 H04W72/042

    Abstract: A system and a method for allocating Sounding Reference Signal (SRS) resources are provided in the present invention, the method includes: an e-Node-B (eNB) allocating a SRS bandwidth with 4n Resource Blocks (RBs) to a terminal, and equally dividing a time domain sequence of a SRS into t portions in the SRS bandwidth; the eNB configuring a time domain RePetition Factor (RPF) used by the UE, and the eNB configuring the UE to use one or more cyclic shifts in L cyclic shifts for each UE; then the eNB notifying the UE of a value of the time domain RPF, a location of a used frequency comb and a used cyclic shift by signaling, wherein n is a positive integer; the RPF satisfies a following condition: 48 × n RPF can be exactly divided by 12; t is an integer by which 48 × n RPF can be exactly divided; and L≦t.

    Abstract translation: 本发明提供了一种用于分配探测参考信号(SRS)资源的系统和方法,该方法包括:向终端分配具有4n个资源块(RB)的SRS带宽的e-Node-B(eNB),以及 将SRS的时域序列等分成SRS带宽中的t个部分; 所述eNB配置所述UE使用的时域RePetition Factor(RPF),所述eNB配置所述UE对每个UE使用L个循环移位中的一个或多个循环移位; 然后eNB通过UE通知信令的时域RPF的值,所使用的频率梳的位置和使用的循环移位,其中n是正整数; RPF满足以下条件:48×n RPF可以精确地除以12; t是48×n RPF可以精确分割的整数; 和L≦̸ t。

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