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公开(公告)号：US07691734B2
公开(公告)日：2010-04-06
申请号：US11680637
申请日：2007-03-01
IPC分类号： H01L21/04
CPC分类号： H01L21/763 , H01L29/0821 , H01L29/66272 , H01L29/732
摘要： A far subcollector, or a buried doped semiconductor layer located at a depth that exceeds the range of conventional ion implantation, is formed by ion implantation of dopants into a region of an initial semiconductor substrate followed by an epitaxial growth of semiconductor material. A reachthrough region to the far subcollector is formed by outdiffusing a dopant from a doped material layer deposited in the at least one deep trench that adjoins the far subcollector. The reachthrough region may be formed surrounding the at least one deep trench or only on one side of the at least one deep trench. If the inside of the at least one trench is electrically connected to the reachthrough region, a metal contact may be formed on the doped fill material within the at least one trench. If not, a metal contact is formed on a secondary reachthrough region that contacts the reachthrough region.
摘要翻译： 通过将掺杂剂离子注入到初始半导体衬底的区域中，随后半导体材料的外延生长，形成位于超过常规离子注入范围的深度的远的子集电极或掩埋掺杂半导体层。 通过从沉积在邻接远子集电极的至少一个深沟槽中的掺杂材料层向外扩散掺杂剂形成远子集电极的到达区域。 穿通区域可形成为围绕至少一个深沟槽或仅在至少一个深沟槽的一侧上。 如果至少一个沟槽的内部电连接到通孔区域，则可以在至少一个沟槽内的掺杂填充材料上形成金属接触。 如果不是，则在与接触区域接触的次级通过区域上形成金属接触。
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公开(公告)号：US20080211064A1
公开(公告)日：2008-09-04
申请号：US11680637
申请日：2007-03-01
IPC分类号： H01L29/06 , H01L21/425
CPC分类号： H01L21/763 , H01L29/0821 , H01L29/66272 , H01L29/732
摘要： A far subcollector, or a buried doped semiconductor layer located at a depth that exceeds the range of conventional ion implantation, is formed by ion implantation of dopants into a region of an initial semiconductor substrate followed by an epitaxial growth of semiconductor material. A reachthrough region to the far subcollector is formed by outdiffusing a dopant from a doped material layer deposited in the at least one deep trench that adjoins the far subcollector. The reachthrough region may be formed surrounding the at least one deep trench or only on one side of the at least one deep trench. If the inside of the at least one trench is electrically connected to the reachthrough region, a metal contact may be formed on the doped fill material within the at least one trench. If not, a metal contact is formed on a secondary reachthrough region that contacts the reachthrough region.
摘要翻译： 通过将掺杂剂离子注入到初始半导体衬底的区域中，随后半导体材料的外延生长，形成位于超过常规离子注入范围的深度的远的子集电极或掩埋掺杂半导体层。 通过从沉积在邻接远子集电极的至少一个深沟槽中的掺杂材料层向外扩散掺杂剂形成远子集电极的到达区域。 穿通区可以形成在至少一个深沟槽周围，或仅在至少一个深沟槽的一侧上。 如果至少一个沟槽的内部电连接到通孔区域，则可以在至少一个沟槽内的掺杂填充材料上形成金属接触。 如果不是，则在与接触区域接触的次级通过区域上形成金属接触。
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公开(公告)号：US08105924B2
公开(公告)日：2012-01-31
申请号：US12691320
申请日：2010-01-21
IPC分类号： H01L21/04
CPC分类号： H01L21/763 , H01L29/0821 , H01L29/66272 , H01L29/732
摘要： A far subcollector, or a buried doped semiconductor layer located at a depth that exceeds the range of conventional ion implantation, is formed by ion implantation of dopants into a region of an initial semiconductor substrate followed by an epitaxial growth of semiconductor material. A reachthrough region to the far subcollector is formed by outdiffusing a dopant from a doped material layer deposited in the at least one deep trench that adjoins the far subcollector. The reachthrough region may be formed surrounding the at least one deep trench or only on one side of the at least one deep trench. If the inside of the at least one trench is electrically connected to the reachthrough region, a metal contact may be formed on the doped fill material within the at least one trench. If not, a metal contact is formed on a secondary reachthrough region that contacts the reachthrough region.
摘要翻译： 通过将掺杂剂离子注入到初始半导体衬底的区域中，随后半导体材料的外延生长，形成位于超过常规离子注入范围的深度的远的子集电极或掩埋掺杂半导体层。 通过从沉积在邻接远子集电极的至少一个深沟槽中的掺杂材料层向外扩散掺杂剂形成远子集电极的到达区域。 穿通区域可形成为围绕至少一个深沟槽或仅在至少一个深沟槽的一侧上。 如果至少一个沟槽的内部电连接到通孔区域，则可以在至少一个沟槽内的掺杂填充材料上形成金属接触。 如果不是，则在与接触区域接触的次级通过区域上形成金属接触。
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公开(公告)号：US20100117189A1
公开(公告)日：2010-05-13
申请号：US12691320
申请日：2010-01-21
IPC分类号： H01L29/06 , H01L21/761
CPC分类号： H01L21/763 , H01L29/0821 , H01L29/66272 , H01L29/732
摘要： A far subcollector, or a buried doped semiconductor layer located at a depth that exceeds the range of conventional ion implantation, is formed by ion implantation of dopants into a region of an initial semiconductor substrate followed by an epitaxial growth of semiconductor material. A reachthrough region to the far subcollector is formed by outdiffusing a dopant from a doped material layer deposited in the at least one deep trench that adjoins the far subcollector. The reachthrough region may be formed surrounding the at least one deep trench or only on one side of the at least one deep trench. If the inside of the at least one trench is electrically connected to the reachthrough region, a metal contact may be formed on the doped fill material within the at least one trench. If not, a metal contact is formed on a secondary reachthrough region that contacts the reachthrough region.
摘要翻译： 通过将掺杂剂离子注入到初始半导体衬底的区域中，随后半导体材料的外延生长，形成位于超过常规离子注入范围的深度的远的子集电极或掩埋掺杂半导体层。 通过从沉积在邻接远子集电极的至少一个深沟槽中的掺杂材料层向外扩散掺杂剂形成远子集电极的到达区域。 穿通区域可形成为围绕至少一个深沟槽或仅在至少一个深沟槽的一侧上。 如果至少一个沟槽的内部电连接到通孔区域，则可以在至少一个沟槽内的掺杂填充材料上形成金属接触。 如果不是，则在与接触区域接触的次级通过区域上形成金属接触。
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公开(公告)号：US08338265B2
公开(公告)日：2012-12-25
申请号：US12269069
申请日：2008-11-12
申请人： Douglas D. Coolbaugh , Jeffrey B. Johnson , Peter J. Lindgren , Xuefeng Liu , James S. Nakos , Bradley A. Orner , Robert M. Rassel , David C. Sheridan
发明人： Douglas D. Coolbaugh , Jeffrey B. Johnson , Peter J. Lindgren , Xuefeng Liu , James S. Nakos , Bradley A. Orner , Robert M. Rassel , David C. Sheridan
IPC分类号： H01L21/76
CPC分类号： H01L21/743 , H01L21/28518 , H01L21/76224 , H01L21/8249 , H01L27/0623 , H01L29/41 , H01L2924/0002 , H01L2924/00
摘要： A trench contact silicide is formed on an inner wall of a contact trench that reaches to a buried conductive layer in a semiconductor substrate to reduce parasitic resistance of a reachthrough structure. The trench contact silicide is formed at the bottom, on the sidewalls of the trench, and on a portion of the top surface of the semiconductor substrate. The trench is subsequently filled with a middle-of-line (MOL) dielectric. A contact via may be formed on the trench contact silicide. The trench contact silicide may be formed through a single silicidation reaction with a metal layer or through multiple silicidation reactions with multiple metal layers.
摘要翻译： 沟槽接触硅化物形成在接触沟槽的内壁上，该接触沟槽的内壁到达半导体衬底中的掩埋导电层，以减小通孔结构的寄生电阻。 沟槽接触硅化物形成在底部，沟槽的侧壁上以及在半导体衬底的顶表面的一部分上。 沟槽随后填充有中间线（MOL）电介质。 可以在沟槽接触硅化物上形成接触通孔。 沟槽接触硅化物可以通过与金属层的单一硅化反应或通过与多个金属层的多次硅化反应形成。
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公开(公告)号：US08288244B2
公开(公告)日：2012-10-16
申请号：US12835283
申请日：2010-07-13
申请人： David S. Collins , Jeffrey B. Johnson , Xuefeng Liu , Bradley A. Orner , Robert M. Rassel , David C. Sheridan
发明人： David S. Collins , Jeffrey B. Johnson , Xuefeng Liu , Bradley A. Orner , Robert M. Rassel , David C. Sheridan
CPC分类号： H01L29/8611 , H01L27/0814 , H01L29/417 , H01L29/868 , H01L29/872 , H01L29/93
摘要： A method for forming a lateral passive device including a dual annular electrode is disclosed. The annular electrodes formed from the method include an anode and a cathode. The annular electrodes allow anode and cathode series resistances to be optimized to the lowest values at a fixed device area. In addition, the parasitic capacitance to a bottom plate (substrate) is greatly reduced.
摘要翻译： 公开了一种用于形成包括双环形电极的横向无源器件的方法。 由该方法形成的环形电极包括阳极和阴极。 环形电极允许将阳极和阴极串联电阻优化为固定装置区域的最低值。 此外，对底板（衬底）的寄生电容大大降低。
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公开(公告)号：US20100279483A1
公开(公告)日：2010-11-04
申请号：US12835283
申请日：2010-07-13
申请人： David S. Collins , Jeffrey B. Johnson , Xuefeng Liu , Bradley A. Orner , Robert M. Rassel , David C. Sheridan
发明人： David S. Collins , Jeffrey B. Johnson , Xuefeng Liu , Bradley A. Orner , Robert M. Rassel , David C. Sheridan
IPC分类号： H01L21/329 , H01L21/04
CPC分类号： H01L29/8611 , H01L27/0814 , H01L29/417 , H01L29/868 , H01L29/872 , H01L29/93
摘要： A lateral passive device is disclosed including a dual annular electrode. The annular electrodes form an anode and a cathode. The annular electrodes allow anode and cathode series resistances to be optimized to the lowest values at a fixed device area. In addition, the parasitic capacitance to a bottom plate (substrate) is greatly reduced. In one embodiment, a device includes a first annular electrode surrounding a second annular electrode formed on a substrate, and the second annular electrode surrounds an insulator region. A related method is also disclosed.
摘要翻译： 公开了一种包括双环形电极的横向无源器件。 环形电极形成阳极和阴极。 环形电极允许将阳极和阴极串联电阻优化为固定装置区域的最低值。 此外，对底板（衬底）的寄生电容大大降低。 在一个实施例中，装置包括围绕形成在基板上的第二环形电极的第一环形电极，并且第二环形电极围绕绝缘体区域。 还公开了相关方法。
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公开(公告)号：US20100117237A1
公开(公告)日：2010-05-13
申请号：US12269069
申请日：2008-11-12
申请人： Douglas D. Coolbaugh , Jeffrey B. Johnson , Peter J. Lindgren , Xuefeng Liu , James S. Nakos , Bradley A. Orner , Robert M. Rassel , David C. Sheridan
发明人： Douglas D. Coolbaugh , Jeffrey B. Johnson , Peter J. Lindgren , Xuefeng Liu , James S. Nakos , Bradley A. Orner , Robert M. Rassel , David C. Sheridan
CPC分类号： H01L21/743 , H01L21/28518 , H01L21/76224 , H01L21/8249 , H01L27/0623 , H01L29/41 , H01L2924/0002 , H01L2924/00
摘要： A trench contact silicide is formed on an inner wall of a contact trench that reaches to a buried conductive layer in a semiconductor substrate to reduce parasitic resistance of a reachthrough structure. The trench contact silicide is formed at the bottom, on the sidewalls of the trench, and on a portion of the top surface of the semiconductor substrate. The trench is subsequently filled with a middle-of-line (MOL) dielectric. A contact via may be formed on the trench contact silicide. The trench contact silicide may be formed through a single silicidation reaction with a metal layer or through multiple silicidation reactions with multiple metal layers.
摘要翻译： 沟槽接触硅化物形成在接触沟槽的内壁上，该接触沟槽的内壁到达半导体衬底中的掩埋导电层，以减小通孔结构的寄生电阻。 沟槽接触硅化物形成在底部，沟槽的侧壁上以及在半导体衬底的顶表面的一部分上。 沟槽随后填充有中间线（MOL）电介质。 可以在沟槽接触硅化物上形成接触通孔。 沟槽接触硅化物可以通过与金属层的单一硅化反应或通过与多个金属层的多次硅化反应形成。
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公开(公告)号：US20070278614A1
公开(公告)日：2007-12-06
申请号：US11422125
申请日：2006-06-05
申请人： David S. Collins , Jeffrey B. Johnson , Xuefeng Liu , Bradley A. Orner , Robert M. Rassel , David C. Sheridan
发明人： David S. Collins , Jeffrey B. Johnson , Xuefeng Liu , Bradley A. Orner , Robert M. Rassel , David C. Sheridan
IPC分类号： H01L29/00
CPC分类号： H01L29/8611 , H01L27/0814 , H01L29/417 , H01L29/868 , H01L29/872 , H01L29/93
摘要： A lateral passive device is disclosed including a dual annular electrode. The annular electrodes form an anode and a cathode. The annular electrodes allow anode and cathode series resistances to be optimized to the lowest values at a fixed device area. In addition, the parasitic capacitance to a bottom plate (substrate) is greatly reduced. In one embodiment, a device includes a first annular electrode surrounding a second annular electrode formed on a substrate, and the second annular electrode surrounds an insulator region. A related method is also disclosed.
摘要翻译： 公开了一种包括双环形电极的横向无源器件。 环形电极形成阳极和阴极。 环形电极允许将阳极和阴极串联电阻优化为固定装置区域的最低值。 此外，对底板（衬底）的寄生电容大大降低。 在一个实施例中，装置包括围绕形成在基板上的第二环形电极的第一环形电极，并且第二环形电极围绕绝缘体区域。 还公开了相关方法。
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公开(公告)号：US20140239498A1
公开(公告)日：2014-08-28
申请号：US13570737
申请日：2012-08-09
申请人： Douglas D. Coolbaugh , Jeffrey B. Johnson , Peter J. Lindgren , Xuefeng Liu , James S. Nakos , Bradley A. Orner , Robert M. Rassel , David C. Sheridan
发明人： Douglas D. Coolbaugh , Jeffrey B. Johnson , Peter J. Lindgren , Xuefeng Liu , James S. Nakos , Bradley A. Orner , Robert M. Rassel , David C. Sheridan
IPC分类号： H01L23/48 , H01L23/482
CPC分类号： H01L21/743 , H01L21/28518 , H01L21/76224 , H01L21/8249 , H01L27/0623 , H01L29/41 , H01L2924/0002 , H01L2924/00
摘要： A trench contact silicide is formed on an inner wall of a contact trench that reaches to a buried conductive layer in a semiconductor substrate to reduce parasitic resistance of a reachthrough structure. The trench contact silicide is formed at the bottom, on the sidewalls of the trench, and on a portion of the top surface of the semiconductor substrate. The trench is subsequently filled with a middle-of-line (MOL) dielectric. A contact via may be formed on the trench contact silicide. The trench contact silicide may be formed through a single silicidation reaction with a metal layer or through multiple silicidation reactions with multiple metal layers.
摘要翻译： 沟槽接触硅化物形成在接触沟槽的内壁上，该接触沟槽的内壁到达半导体衬底中的掩埋导电层，以减小通孔结构的寄生电阻。 沟槽接触硅化物形成在底部，沟槽的侧壁上以及在半导体衬底的顶表面的一部分上。 沟槽随后填充有中间线（MOL）电介质。 可以在沟槽接触硅化物上形成接触通孔。 沟槽接触硅化物可以通过与金属层的单一硅化反应或通过与多个金属层的多次硅化反应形成。
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