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公开(公告)号：US20080000768A1
公开(公告)日：2008-01-03
申请号：US11428226
申请日：2006-06-30
CPC分类号： C23C14/3407 , H01J37/3408 , H01J37/3423 , H01J37/3429 , H01J37/3435 , H01J37/3444
摘要： A method and apparatus for electrically coupling a plurality of target together is disclosed. Individually powered targets allow greater control over depositing during a sputtering process. By individually powering the targets, different power levels may be applied to different targets. The targets may additionally be coupled together with a resistor. The resistor allows the targets to have a more controlled power level.
摘要翻译： 公开了一种用于将多个目标物电耦合在一起的方法和装置。 单独供电的目标允许在溅射过程中更好地控制沉积。 通过单独为目标供电，不同的功率水平可能适用于不同的目标。 靶可以另外与电阻器耦合在一起。 电阻允许目标具有更多的受控功率水平。
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公开(公告)号：US20080006523A1
公开(公告)日：2008-01-10
申请号：US11764217
申请日：2007-06-17
CPC分类号： C23C14/042 , C23C14/50 , C23C14/564 , H01J37/32458 , H01J37/32623 , H01J37/32651 , H01J37/32715
摘要： The present invention generally comprises a top shield for shielding a shadow frame within a PVD chamber. The top shield may remain in a stationary position and at least partially shield the shadow frame to reduce the amount of material that may deposit on the shadow frame during processing. The top shield may be cooled to reduce the amount of fluxuation in temperature of the top shield and shadow frame during processing and/or during down time.
摘要翻译： 本发明通常包括用于屏蔽PVD室内的阴影框架的顶部屏蔽件。 顶部屏蔽可以保持在静止位置，并且至少部分地遮蔽阴影框架以减少在处理期间可能沉积在阴影框架上的材料的量。 顶部屏蔽可以被冷却以减少处理期间和/或在停机期间顶部屏蔽和阴影框架的温度的变化量。
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公开(公告)号：US09222165B2
公开(公告)日：2015-12-29
申请号：US13353136
申请日：2012-01-18
CPC分类号： C23C14/042 , C23C14/50 , C23C14/564 , H01J37/32458 , H01J37/32623 , H01J37/32651 , H01J37/32715
摘要： The present invention generally comprises a top shield for shielding a shadow frame within a PVD chamber. The top shield may remain in a stationary position and at least partially shield the shadow frame to reduce the amount of material that may deposit on the shadow frame during processing. The top shield may be cooled to reduce the amount of fluxuation in temperature of the top shield and shadow frame during processing and/or during down time.
摘要翻译： 本发明通常包括用于屏蔽PVD室内的阴影框架的顶部屏蔽件。 顶部屏蔽可以保持在静止位置，并且至少部分地遮蔽阴影框架以减少在处理期间可能沉积在阴影框架上的材料的量。 顶部屏蔽可以被冷却以减少处理期间和/或在停机期间顶部屏蔽和阴影框架的温度的变化量。
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公开(公告)号：US20070295596A1
公开(公告)日：2007-12-27
申请号：US11426271
申请日：2006-06-23
CPC分类号： C23C14/3407 , C23C14/352 , C23C14/564 , H01J37/3435
摘要： A physical vapor deposition target assembly is configured to isolate a target-bonding layer from a processing region. In one embodiment, the target assembly comprises a backing plate, a target having a first surface and a second surface, and a bonding layer disposed between the backing plate and the second surface. The first surface of the target is in fluid contact with a processing region and the second surface of the target is oriented toward the backing plate. The target assembly may include multiple targets.
摘要翻译： 物理气相沉积靶组件被配置为将目标结合层与处理区域隔离。 在一个实施例中，目标组件包括背板，具有第一表面和第二表面的靶，以及设置在背板和第二表面之间的结合层。 目标的第一表面与处理区域流体接触，并且目标物的第二表面朝向背板取向。 目标组件可以包括多个目标。
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公开(公告)号：US20120111273A1
公开(公告)日：2012-05-10
申请号：US13353136
申请日：2012-01-18
IPC分类号： C23C16/04 , C23C16/458
CPC分类号： C23C14/042 , C23C14/50 , C23C14/564 , H01J37/32458 , H01J37/32623 , H01J37/32651 , H01J37/32715
摘要： The present invention generally comprises a top shield for shielding a shadow frame within a PVD chamber. The top shield may remain in a stationary position and at least partially shield the shadow frame to reduce the amount of material that may deposit on the shadow frame during processing. The top shield may be cooled to reduce the amount of fluxuation in temperature of the top shield and shadow frame during processing and/or during down time.
摘要翻译： 本发明通常包括用于屏蔽PVD室内的阴影框架的顶部屏蔽件。 顶部屏蔽可以保持在静止位置，并且至少部分地遮蔽阴影框架以减少在处理期间可能沉积在阴影框架上的材料的量。 顶部屏蔽可以被冷却以减少处理期间和/或在停机期间顶部屏蔽和阴影框架的温度的变化量。
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公开(公告)号：US07815782B2
公开(公告)日：2010-10-19
申请号：US11426271
申请日：2006-06-23
IPC分类号： C23C14/35
CPC分类号： C23C14/3407 , C23C14/352 , C23C14/564 , H01J37/3435
摘要： A physical vapor deposition target assembly is configured to isolate a target-bonding layer from a processing region. In one embodiment, the target assembly comprises a backing plate, a target having a first surface and a second surface, and a bonding layer disposed between the backing plate and the second surface. The first surface of the target is in fluid contact with a processing region and the second surface of the target is oriented toward the backing plate. The target assembly may include multiple targets.
摘要翻译： 物理气相沉积靶组件被配置为将目标结合层与处理区域隔离。 在一个实施例中，目标组件包括背板，具有第一表面和第二表面的靶，以及设置在背板和第二表面之间的结合层。 目标的第一表面与处理区域流体接触，并且目标物的第二表面朝向背板取向。 目标组件可以包括多个目标。
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公开(公告)号：US20070295598A1
公开(公告)日：2007-12-27
申请号：US11483134
申请日：2006-07-07
CPC分类号： C23C14/3407 , C23C14/352 , C23C14/564 , H01J37/3435
摘要： In certain embodiments, the invention comprises a backing plate for accommodating large area sputtering targets is disclosed. The backing plate assembly has cavities carved into the back surface of the backing plate. The backing plate may further include cooling channels that run through the backing plate to control the temperature of the backing plate and the target. The cavities may be filled with a material that has a lower density than the backing plate. Additionally, the entire back surface may be covered with the material to produce a smooth surface upon which a magnetron may move during a PVD process.
摘要翻译： 在某些实施例中，本发明包括用于容纳大面积溅射靶的背板。 背板组件具有雕刻到背板的后表面中的腔体。 背板还可以包括穿过背板的冷却通道，以控制背板和靶的温度。 空腔可以填充具有比背板更低密度的材料。 此外，整个后表面可以被材料覆盖以产生光滑表面，在PVD过程中磁控管可在该光滑表面上移动。
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8.发明授权Ganged scanning of multiple magnetrons, especially two level folded magnetrons 有权组合扫描多个磁控管，特别是两个级别的磁控管公开(公告)号：US08961756B2
公开(公告)日：2015-02-24
申请号：US11780757
申请日：2007-07-20
CPC分类号： H01J37/3408 , H01J37/3455
摘要： A magnetron assembly including one or more magnetrons each forming a closed plasma loop on the sputtering face of the target. The target may include multiple strip targets on which respective strip magnetrons roll and are partially supported on a common support plate through a spring mechanism. The strip magnetron may be a two-level folded magnetron in which each magnetron forms a folded plasma loop extending between lateral sides of the strip target and its ends meet in the middle of the target. The magnets forming the magnetron may be arranged in a pattern having generally uniform straight portions joined by curved portion in which extra magnet positions are available near the corners to steer the plasma track. Multiple magnetrons, possibly flexible, may be resiliently supported on a scanned support plate and individually partially supported by rollers on the back of one or more targets.
摘要翻译： 磁控管组件包括一个或多个磁控管，每个磁控管在靶的溅射面上形成封闭的等离子体环。 目标可以包括多个条带目标，相应的带状磁控管在其上滚动并且通过弹簧机构部分地支撑在公共支撑板上。 带状磁控管可以是两级折叠磁控管，其中每个磁控管形成在条带靶的侧面之间延伸的折叠等离子体环，并且其端部在目标的中间相遇。 形成磁控管的磁体可以布置成具有通过弯曲部分连接的具有大致均匀的直线部分的图案，其中在角附近提供额外的磁体位置以引导等离子体轨道。 多个可能是柔性的磁控管可以弹性地支撑在扫描的支撑板上，并且单独部分地由一个或多个靶的背面上的辊支撑。
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公开(公告)号：US20080023319A1
公开(公告)日：2008-01-31
申请号：US11769924
申请日：2007-06-28
IPC分类号： C23C14/35
CPC分类号： H01J37/3408 , H01J37/3455
摘要： The present invention discloses a physical vapor deposition apparatus and a method for sputtering. When sputtering from a plurality of sputtering targets, a plurality of magnetrons may be used. The number of magnetrons may correspond to the number of targets. Each magnetron may be different to control the amount of material deposited from each sputtering target and the specific location on the sputtering target that is sputtered. The magnetrons may be spaced a different distance from the backing plate and hence, the target. The magnetrons may be of different sizes. The magnetrons may have a different magnetic path. The magnetrons may have a different pitch. The magnetrons may have a different magnitude. By tailoring the distance, size, path, pitch, and magnitude, uniform sputtering and target erosion may be achieved.
摘要翻译： 本发明公开了一种物理气相沉积装置和溅射方法。 当从多个溅射靶溅射时，可以使用多个磁控管。 磁控管的数量可以对应于目标的数量。 每个磁控管可以不同以控制从每个溅射靶沉积的材料的数量和溅射的溅射靶上的特定位置。 磁控管可以与背板间隔开不同的距离，因此与目标物隔开。 磁控管可能具有不同的尺寸。 磁控管可以具有不同的磁路。 磁控管可能具有不同的音调。 磁控管可能具有不同的大小。 通过调整距离，尺寸，路径，间距和幅度，可以实现均匀的溅射和目标侵蚀。
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公开(公告)号：US20080011601A1
公开(公告)日：2008-01-17
申请号：US11771366
申请日：2007-06-29
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , H01J37/32724 , H01J37/34 , H01J37/3438 , H01J37/3455
摘要： A physical vapor deposition (PVD) apparatus and a PVD method are disclosed. Extending an anode across the processing space between the target and the substrate may increase deposition uniformity on a substrate. The anode provides a path to ground for electrons that are excited in the plasma and may uniformly distribute the electrons within the plasma across the processing space rather than collect at the chamber walls. The uniform distribution of the electrons within the plasma may create a uniform deposition of material on the substrate. The anodes may be cooled with a cooling fluid to control the temperature of the anodes and reduce flaking. The anodes may be disposed across the process space perpendicular to the long side of a magnetron that may scan in two dimensions across the back of the sputtering target. The scanning magnetron may reduce localized heating of the anode.
摘要翻译： 公开了物理气相沉积（PVD）装置和PVD方法。 将阳极延伸穿过靶和衬底之间的处理空间可增加衬底上的沉积均匀性。 阳极为在等离子体中被激发的电子提供到地面的路径，并且可以将等离子体内的电子均匀地分布在处理空间中，而不是在室壁处收集。 电子在等离子体内的均匀分布可能会在衬底上产生均匀的材料沉积。 阳极可以用冷却流体冷却以控制阳极的温度并减少剥落。 阳极可以跨过垂直于磁控管的长边的处理空间，其可以跨过溅射靶的背面的二维扫描。 扫描磁控管可以减少阳极的局部加热。
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