公开(公告)号：US20120103406A1

公开(公告)日：2012-05-03

申请号：US12939050

申请日：2010-11-03

申请人： Brendan M. KAYES ,  Isik C. KIZILYALLI ,  Hui NIE ,  Melissa J. ARCHER

发明人： Brendan M. KAYES ,  Isik C. KIZILYALLI ,  Hui NIE ,  Melissa J. ARCHER

IPC分类号： H01L31/0216 ,  H01L31/18 ,  H01L31/0304

CPC分类号： H01L31/022425 ,  H01L31/022441 ,  H01L31/0735 ,  H01L31/1892 ,  Y02E10/544

摘要： Embodiments of the invention generally relate to photovoltaic devices and more specifically, to the metallic contacts disposed on photovoltaic devices, such as photovoltaic cells, and to the fabrication processes for forming such metallic contacts. The metallic contacts contain a palladium germanium alloy formed at low temperatures during an anneal process. In some embodiments, the photovoltaic cell may be heated to a temperature within a range from about 20° C. to about 275° C. during the anneal process, for example, at about 150° C. for about 30 minutes. In other embodiments, the photovoltaic cell may be heated to a temperature within a range from about 150° C. to about 275° C. for a time period of at least about 0.5 minutes during the anneal process.

摘要翻译： 本发明的实施例一般涉及光伏器件，更具体地说，涉及设置在诸如光伏电池的光伏器件上的金属触点，以及用于形成这种金属触点的制造工艺。 金属触点含有在退火过程中在低温下形成的钯锗合金。 在一些实施方案中，在退火过程期间，例如在约150℃下，光伏电池可以被加热至约20℃至约275℃范围内的温度约30分钟。 在其它实施例中，在退火过程中，光伏电池可以被加热至约150℃至约275℃的温度至少约0.5分钟的时间。

公开(公告)号：US20120305059A1

公开(公告)日：2012-12-06

申请号：US13223187

申请日：2011-08-31

申请人： Brendan M. KAYES ,  Sylvia SPRYUTTE ,  Gregg HIGASHI ,  Melissa J. ARCHER ,  Thomas J. GMITTER ,  Gang HE ,  Isik C. KIZILYALLI ,  Hui NIE

发明人： Brendan M. KAYES ,  Sylvia SPRYUTTE ,  Gregg HIGASHI ,  Melissa J. ARCHER ,  Thomas J. GMITTER ,  Gang HE ,  Isik C. KIZILYALLI ,  Hui NIE

IPC分类号： H01L31/06 ,  H01L31/0232

CPC分类号： H01L31/065 ,  H01L31/0735 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： An optoelectronic semiconductor device includes an absorber layer made of a direct bandgap semiconductor and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device, the emitter layer made of a different material than the absorber layer and having a higher bandgap than the absorber layer. A heterojunction is formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer at a location offset from the heterojunction. The p-n junction causes a voltage to be generated in the device in response to the device being exposed to light at a front side of the device. The device also includes an n-metal contact disposed on a front side of the device and a p-metal contact disposed on the back side of the device.

摘要翻译： 光电子半导体器件包括由直接带隙半导体制成并且仅具有一种掺杂类型的吸收层。 发射极层位于比器件的背面靠近吸收体层，发射极层由与吸收层不同的材料制成并具有比吸收层更高的带隙。 在发射极层和吸收层之间形成异质结，并且在偏离异质结的位置处在发射极层和吸收体层之间形成p-n结。 p-n结导致器件响应于器件暴露于器件正面的光而产生电压。 该装置还包括设置在装置的前侧上的n型金属触点和设置在该装置背面的p型金属触点。

公开(公告)号：US20110056546A1

公开(公告)日：2011-03-10

申请号：US12940955

申请日：2010-11-05

申请人： Isik C. KIZILYALLI ,  Melissa J. ARCHER ,  Harry ATWATER ,  Thomas J. GMITTER ,  Gang HE ,  Andreas G. HEGEDUS ,  Gregg HIGASHI

发明人： Isik C. KIZILYALLI ,  Melissa J. ARCHER ,  Harry ATWATER ,  Thomas J. GMITTER ,  Gang HE ,  Andreas G. HEGEDUS ,  Gregg HIGASHI

IPC分类号： H01L31/0352 ,  H01L31/0304

CPC分类号： H01L31/0735 ,  Y02E10/544

摘要： Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. In one embodiment of a photovoltaic (PV) device, the PV device generally includes an n-doped layer and a p+-doped layer adjacent to the n-doped layer to form a p-n layer such that electric energy is created when electromagnetic radiation is absorbed by the p-n layer. The n-doped layer and the p+-doped layer may compose an absorber layer having a thickness less than 500 nm. Such a thin absorber layer may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.