公开(公告)号：US20120305059A1

公开(公告)日：2012-12-06

申请号：US13223187

申请日：2011-08-31

申请人： Brendan M. KAYES ,  Sylvia SPRYUTTE ,  Gregg HIGASHI ,  Melissa J. ARCHER ,  Thomas J. GMITTER ,  Gang HE ,  Isik C. KIZILYALLI ,  Hui NIE

发明人： Brendan M. KAYES ,  Sylvia SPRYUTTE ,  Gregg HIGASHI ,  Melissa J. ARCHER ,  Thomas J. GMITTER ,  Gang HE ,  Isik C. KIZILYALLI ,  Hui NIE

IPC分类号： H01L31/06 ,  H01L31/0232

CPC分类号： H01L31/065 ,  H01L31/0735 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： An optoelectronic semiconductor device includes an absorber layer made of a direct bandgap semiconductor and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device, the emitter layer made of a different material than the absorber layer and having a higher bandgap than the absorber layer. A heterojunction is formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer at a location offset from the heterojunction. The p-n junction causes a voltage to be generated in the device in response to the device being exposed to light at a front side of the device. The device also includes an n-metal contact disposed on a front side of the device and a p-metal contact disposed on the back side of the device.

摘要翻译： 光电子半导体器件包括由直接带隙半导体制成并且仅具有一种掺杂类型的吸收层。 发射极层位于比器件的背面靠近吸收体层，发射极层由与吸收层不同的材料制成并具有比吸收层更高的带隙。 在发射极层和吸收层之间形成异质结，并且在偏离异质结的位置处在发射极层和吸收体层之间形成p-n结。 p-n结导致器件响应于器件暴露于器件正面的光而产生电压。 该装置还包括设置在装置的前侧上的n型金属触点和设置在该装置背面的p型金属触点。

公开(公告)号：US20120103406A1

公开(公告)日：2012-05-03

申请号：US12939050

申请日：2010-11-03

申请人： Brendan M. KAYES ,  Isik C. KIZILYALLI ,  Hui NIE ,  Melissa J. ARCHER

发明人： Brendan M. KAYES ,  Isik C. KIZILYALLI ,  Hui NIE ,  Melissa J. ARCHER

IPC分类号： H01L31/0216 ,  H01L31/18 ,  H01L31/0304

CPC分类号： H01L31/022425 ,  H01L31/022441 ,  H01L31/0735 ,  H01L31/1892 ,  Y02E10/544

摘要： Embodiments of the invention generally relate to photovoltaic devices and more specifically, to the metallic contacts disposed on photovoltaic devices, such as photovoltaic cells, and to the fabrication processes for forming such metallic contacts. The metallic contacts contain a palladium germanium alloy formed at low temperatures during an anneal process. In some embodiments, the photovoltaic cell may be heated to a temperature within a range from about 20° C. to about 275° C. during the anneal process, for example, at about 150° C. for about 30 minutes. In other embodiments, the photovoltaic cell may be heated to a temperature within a range from about 150° C. to about 275° C. for a time period of at least about 0.5 minutes during the anneal process.

摘要翻译： 本发明的实施例一般涉及光伏器件，更具体地说，涉及设置在诸如光伏电池的光伏器件上的金属触点，以及用于形成这种金属触点的制造工艺。 金属触点含有在退火过程中在低温下形成的钯锗合金。 在一些实施方案中，在退火过程期间，例如在约150℃下，光伏电池可以被加热至约20℃至约275℃范围内的温度约30分钟。 在其它实施例中，在退火过程中，光伏电池可以被加热至约150℃至约275℃的温度至少约0.5分钟的时间。

公开(公告)号：US20120252159A1

公开(公告)日：2012-10-04

申请号：US13451439

申请日：2012-04-19

申请人： Hui NIE ,  Brendan M. KAYES ,  Isik C. KIZILYALLI

发明人： Hui NIE ,  Brendan M. KAYES ,  Isik C. KIZILYALLI

IPC分类号： H01L31/0304

CPC分类号： H01L31/0735 ,  H01L31/022441 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/544

摘要： Embodiments generally relate to optoelectronic semiconductor devices such as photovoltaic cells. In one aspect, a method for forming a device includes forming an absorber layer made of gallium arsenide (GaAs) and having one type of doping, and forming an emitter layer made of a different material and having a higher bandgap than the absorber layer. An intermediate layer can be formed between emitter and absorber layers. A heterojunction and p-n junction are formed between the emitter layer and the absorber layer, where the p-n junction is formed at least partially within the different material at a location offset from the heterojunction. A majority of the absorber layer can be outside of a depletion region formed by the p-n junction. The p-n junction causes a voltage to be generated in the cell in response to the cell being exposed to light at a front side.

摘要翻译： 实施例通常涉及诸如光伏电池的光电半导体器件。 一方面，用于形成器件的方法包括形成由砷化镓（GaAs）制成并具有一种类型的掺杂的吸收层，并形成由不同材料制成并具有比吸收层更高的带隙的发射极层。 可以在发射极和吸收层之间形成中间层。 在发射极层和吸收层之间形成异质结和p-n结，其中在与异质结偏离的位置处至少部分地在不同的材料内形成p-n结。 吸收层的大部分可以在由p-n结形成的耗尽区的外部。 p-n结导致电池响应于电池暴露于正面的光而产生电压。

公开(公告)号：US20120204942A1

公开(公告)日：2012-08-16

申请号：US13451455

申请日：2012-04-19

申请人： Hui NIE ,  Brendan M. KAYES ,  Isik C. KIZILYALLI

发明人： Hui NIE ,  Brendan M. KAYES ,  Isik C. KIZILYALLI

IPC分类号： H01L31/0352

CPC分类号： H01L31/0735 ,  H01L31/022441 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/544

摘要： Embodiments generally relate to optoelectronic semiconductor devices such as solar cells. In one aspect, a device includes an absorber layer made of gallium arsenide (GaAs) and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device and is made of a different material and having a higher bandgap than the absorber layer. A heterojunction is formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction. An intermediate layer is located between the absorber layer and the emitter layer and provides the offset of the p-n junction from the heterojunction, and includes a graded layer and an ungraded back window layer.

摘要翻译： 实施例通常涉及诸如太阳能电池的光电半导体器件。 在一个方面，器件包括由砷化镓（GaAs）制成并且仅具有一种掺杂类型的吸收层。 发射极层位于比器件的背面靠近吸收体层，并且由不同的材料制成并具有比吸收层更高的带隙。 在发射极层和吸收层之间形成异质结，并且在偏离异质结的位置处，在发射极层和吸收层之间形成p-n结，并且至少部分地在不同的材料内形成p-n结。 中间层位于吸收层和发射极层之间，并且提供p-n结与异质结的偏移，并且包括渐变层和未分级的后窗层。

公开(公告)号：US20120104460A1

公开(公告)日：2012-05-03

申请号：US12939077

申请日：2010-11-03

申请人： Hui NIE ,  Brendan M. KAYES ,  Isik C. KIZILYALLI

发明人： Hui NIE ,  Brendan M. KAYES ,  Isik C. KIZILYALLI

IPC分类号： H01L31/109 ,  H01L21/04

CPC分类号： H01L31/0735 ,  H01L31/022441 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/544

摘要： Embodiments of the invention generally relate to optoelectronic semiconductor devices such as photovoltaic devices including solar cells. In one aspect, an optoelectronic semiconductor device includes an absorber layer made of gallium arsenide (GaAs) and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device, the emitter layer made of a different material than the absorber layer and having a higher bandgap than the absorber layer. A heterojunction formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction. The p-n junction causes a voltage to be generated in the device in response to the device being exposed to light at a front side of the device.

摘要翻译： 本发明的实施例一般涉及光电半导体器件，例如包括太阳能电池的光伏器件。 在一个方面，光电子半导体器件包括由砷化镓（GaAs）制成并且仅具有一种掺杂类型的吸收层。 发射极层位于比器件的背面靠近吸收体层，发射极层由与吸收层不同的材料制成并具有比吸收层更高的带隙。 在发射极层和吸收层之间形成的异质结和在发射极层和吸收层之间形成p-n结，并且至少部分地在异质结偏离的位置处在不同的材料内。 p-n结导致器件响应于器件暴露于器件正面的光而产生电压。

公开(公告)号：US20130270589A1

公开(公告)日：2013-10-17

申请号：US13446876

申请日：2012-04-13

申请人： Brendan M. KAYES ,  Sylvia SPRYUTTE ,  I-Kang DING ,  Rose TWIST ,  Gregg HIGASHI

发明人： Brendan M. KAYES ,  Sylvia SPRYUTTE ,  I-Kang DING ,  Rose TWIST ,  Gregg HIGASHI

IPC分类号： H01L33/10 ,  H01L31/0304 ,  H01L31/0232 ,  H01L33/22

CPC分类号： H01L31/056 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/0684 ,  H01L31/0725 ,  H01L31/0735 ,  H01L33/38 ,  H01L33/52 ,  Y02E10/52 ,  Y02E10/547

摘要： An optoelectronic device is disclosed. The optoelectronic device comprises a semiconductor structure; a plurality of contacts on the front side of the semiconductor structure; and a plurality of non-continuous metal contacts on a back side of the semiconductor structure. In an embodiment, a plurality of non-continuous back contacts on an optoelectronic device improve the reflectivity and reduce the losses associated with the back surface of the device.

摘要翻译： 公开了一种光电子器件。 该光电器件包括半导体结构; 在半导体结构的正面上的多个触点; 以及在半导体结构的背侧上的多个非连续金属触点。 在一个实施例中，光电子器件上的多个非连续背接触提高了反射率并减少了与器件背面相关的损耗。

公开(公告)号：US20090020150A1

公开(公告)日：2009-01-22

申请号：US12176057

申请日：2008-07-18

申请人： Harry A. ATWATER ,  Brendan M. KAYES ,  Nathan S. LEWIS ,  James R. MAIOLO, III ,  Joshua M. SPURGEON

发明人： Harry A. ATWATER ,  Brendan M. KAYES ,  Nathan S. LEWIS ,  James R. MAIOLO, III ,  Joshua M. SPURGEON

IPC分类号： H01L31/00

CPC分类号： H01L31/101 ,  H01G9/2054 ,  H01L31/0352 ,  Y02E10/542

摘要： A device having arrays of semiconductor structures with dimensions, ordering and orientations to provide for light absorption and charge carrier separation. The semiconductor structures are formed with relatively high aspect ratios, that is, the structures are long in the direction of received light, but have relatively small radii to facilitate efficient radial collection of carriers.

摘要翻译： 具有尺寸，顺序和取向以提供光吸收和电荷载流子分离的半导体结构阵列的器件。 半导体结构形成为具有相对高的纵横比，即结构在接收光的方向上长，但是具有相对小的半径以便于载体的有效径向收集。

公开(公告)号：US20090020853A1

公开(公告)日：2009-01-22

申请号：US12176099

申请日：2008-07-18

申请人： Brendan M. KAYES ,  Michael A. Filler ,  Nathan S. Lewis ,  Harry A. Atwater

发明人： Brendan M. KAYES ,  Michael A. Filler ,  Nathan S. Lewis ,  Harry A. Atwater

IPC分类号： H01L21/20 ,  H01L29/06

CPC分类号： H01L31/1804 ,  B82Y30/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L27/1446 ,  H01L31/035272 ,  H01L31/04 ,  Y02E10/547 ,  Y02P70/521

摘要： A structure consisting of vertically aligned wire arrays on a Si substrate and a method for producing such wire arrays. The wire arrays are fabricated and positioned on a substrate with an orientation and density particularly adapted for conversion of received light to energy. A patterned oxide layer is used to provide for wire arrays that exhibit narrow diameter and length distribution and provide for controlled wire position.

摘要翻译： 由Si衬底上的垂直排列的线阵列组成的结构和用于制造这种线阵列的方法。 线阵列被制造并定位在具有特别适于将接收的光转换成能量的取向和密度的基底上。 图案化氧化物层用于提供呈现窄直径和长度分布并提供受控导线位置的线阵列。