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    PHOTON RECYCLING IN AN OPTOELECTRONIC DEVICE
    1.
    发明申请
    PHOTON RECYCLING IN AN OPTOELECTRONIC DEVICE 审中-公开
    光电子器件中的光子回收

    公开(公告)号：US20120305059A1

    公开(公告)日：2012-12-06

    申请号：US13223187

    申请日：2011-08-31

    申请人： Brendan M. KAYES ,  Sylvia SPRYUTTE ,  Gregg HIGASHI ,  Melissa J. ARCHER ,  Thomas J. GMITTER ,  Gang HE ,  Isik C. KIZILYALLI ,  Hui NIE

    发明人： Brendan M. KAYES ,  Sylvia SPRYUTTE ,  Gregg HIGASHI ,  Melissa J. ARCHER ,  Thomas J. GMITTER ,  Gang HE ,  Isik C. KIZILYALLI ,  Hui NIE

    IPC分类号： H01L31/06 ,  H01L31/0232

    CPC分类号： H01L31/065 ,  H01L31/0735 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

    摘要： An optoelectronic semiconductor device includes an absorber layer made of a direct bandgap semiconductor and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device, the emitter layer made of a different material than the absorber layer and having a higher bandgap than the absorber layer. A heterojunction is formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer at a location offset from the heterojunction. The p-n junction causes a voltage to be generated in the device in response to the device being exposed to light at a front side of the device. The device also includes an n-metal contact disposed on a front side of the device and a p-metal contact disposed on the back side of the device.

    摘要翻译： 光电子半导体器件包括由直接带隙半导体制成并且仅具有一种掺杂类型的吸收层。 发射极层位于比器件的背面靠近吸收体层，发射极层由与吸收层不同的材料制成并具有比吸收层更高的带隙。 在发射极层和吸收层之间形成异质结，并且在偏离异质结的位置处在发射极层和吸收体层之间形成p-n结。 p-n结导致器件响应于器件暴露于器件正面的光而产生电压。 该装置还包括设置在装置的前侧上的n型金属触点和设置在该装置背面的p型金属触点。

    PHOTOVOLTAIC DEVICE
    3.
    发明申请
    PHOTOVOLTAIC DEVICE 有权
    光电器件

    公开(公告)号：US20110048532A1

    公开(公告)日：2011-03-03

    申请号：US12940876

    申请日：2010-11-05

    申请人： Isik C. KIZILYALLI ,  Melissa ARCHER ,  Harry ATWATER ,  Thomas J. GMITTER ,  Gang HE ,  Andreas HEGEDUS ,  Gregg HIGASHI

    发明人： Isik C. KIZILYALLI ,  Melissa ARCHER ,  Harry ATWATER ,  Thomas J. GMITTER ,  Gang HE ,  Andreas HEGEDUS ,  Gregg HIGASHI

    IPC分类号： H01L31/0304 ,  H01L31/0216 ,  H01L31/0232

    CPC分类号： H01L31/0304 ,  H01L31/022441 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/03046 ,  H01L31/065 ,  H01L31/0682 ,  H01L31/0693 ,  H01L31/0735 ,  Y02E10/50 ,  Y02E10/52 ,  Y02E10/544

    摘要： Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit, according to embodiments of the invention, may have a very thin absorber layer produced by epitaxial lift-off (ELO), all electrical contacts positioned on the back side of the PV device to avoid shadowing, and/or front side and back side light trapping employing a diffuser and a reflector to increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer applied at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

    摘要翻译： 提供了与常规太阳能电池相比，用于将诸如太阳能的电磁辐射转换成电能的方法和装置，其效率提高。 根据本发明的实施例的光伏（PV）单元可以具有通过外延剥离（ELO）制造的非常薄的吸收层，所有电触点位于PV装置的背面以避免阴影，和/或 使用扩散器和反射器的前侧和后侧光捕获以增加入射到PV单元的前侧的光子的吸收。 可以将多个PV单元组合成PV组，并且可以将PV组阵列连接以形成具有在低温下施加的薄金属或导电聚合物的PV模块。 与常规太阳能电池相比，这样的创新可以允许PV装置的更高的效率和灵活性。

    PHOTOVOLTAIC DEVICE WITH INCREASED LIGHT TRAPPING
    4.
    发明申请
    PHOTOVOLTAIC DEVICE WITH INCREASED LIGHT TRAPPING 有权
    具有增加光束捕获的光伏器件

    公开(公告)号：US20110048519A1

    公开(公告)日：2011-03-03

    申请号：US12940966

    申请日：2010-11-05

    申请人： Isik C. KIZILYALLI ,  Melissa ARCHER ,  Harry ATWATER ,  Thomas J. GMITTER ,  Gang HE ,  Andreas HEGEDUS ,  Gregg HIGASHI

    发明人： Isik C. KIZILYALLI ,  Melissa ARCHER ,  Harry ATWATER ,  Thomas J. GMITTER ,  Gang HE ,  Andreas HEGEDUS ,  Gregg HIGASHI

    IPC分类号： H01L31/06

    CPC分类号： H01L31/0735 ,  H01L31/02168 ,  Y02E10/544

    摘要： Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) device may incorporate front side and/or back side light trapping techniques in an effort to absorb as many of the photons incident on the front side of the PV device as possible in the absorber layer. The light trapping techniques may include a front side antireflective coating, multiple window layers, roughening or texturing on the front and/or the back sides, a back side diffuser for scattering the light, and/or a back side reflector for redirecting the light into the interior of the PV device. With such light trapping techniques, more light may be absorbed by the absorber layer for a given amount of incident light, thereby increasing the efficiency of the PV device.

    摘要翻译： 提供了与常规太阳能电池相比，用于将诸如太阳能的电磁辐射转换成电能的方法和装置，其效率提高。 光伏（PV）装置可以包括前侧和/或后侧光捕获技术，以尽量吸收在吸收层中尽可能多地入射到PV装置的前侧的光子。 光捕获技术可以包括前侧防反射涂层，多个窗口层，在前侧和/或后侧上的粗糙化或纹理化，用于散射光的后侧扩散器和/或用于将光重定向到的后侧反射器 PV设备的内部。 通过这种光捕获技术，对于给定量的入射光，更多的光可以被吸收层吸收，从而提高PV器件的效率。

    THIN ABSORBER LAYER OF A PHOTOVOLTAIC DEVICE
    5.
    发明申请
    THIN ABSORBER LAYER OF A PHOTOVOLTAIC DEVICE 有权
    一个光伏器件的薄膜层

    公开(公告)号：US20110041904A1

    公开(公告)日：2011-02-24

    申请号：US12940918

    申请日：2010-11-05

    申请人： Isik C. KIZILYALLI ,  Melissa ARCHER ,  Harry ATWATER ,  Thomas J. GMITTER ,  Gang HE ,  Andreas HEGEDUS ,  Gregg HIGASHI

    发明人： Isik C. KIZILYALLI ,  Melissa ARCHER ,  Harry ATWATER ,  Thomas J. GMITTER ,  Gang HE ,  Andreas HEGEDUS ,  Gregg HIGASHI

    IPC分类号： H01L31/06

    CPC分类号： H01L31/0735 ,  Y02E10/544

    摘要： Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. In one embodiment of a photovoltaic (PV) device, the PV device generally includes an n-doped layer and a p+-doped layer adjacent to the n-doped layer to form a p-n layer such that electric energy is created when electromagnetic radiation is absorbed by the p-n layer. The n-doped layer and the p+-doped layer may compose an absorber layer having a thickness less than 500 nm. Such a thin absorber layer may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

    摘要翻译： 提供了与常规太阳能电池相比，用于将诸如太阳能的电磁辐射转换成电能的方法和装置，其效率提高。 在光伏（PV）器件的一个实施例中，PV器件通常包括与n掺杂层相邻的n掺杂层和p +掺杂层以形成pn层，使得当电磁辐射被吸收时产生电能 由pn层。 n掺杂层和p +掺杂层可以组成厚度小于500nm的吸收层。 与常规太阳能电池相比，这种薄的吸收层可以在PV器件中实现更高的效率和灵活性。

    HIGH GROWTH RATE DEPOSITION FOR GROUP III/V MATERIALS
    8.
    发明申请
    HIGH GROWTH RATE DEPOSITION FOR GROUP III/V MATERIALS 有权
    第III / V组材料的高生长速率沉积

    公开(公告)号：US20110083601A1

    公开(公告)日：2011-04-14

    申请号：US12904090

    申请日：2010-10-13

    申请人： Lori D. WASHINGTON ,  David P. BOUR ,  Gregg HIGASHI ,  Gang HE

    发明人： Lori D. WASHINGTON ,  David P. BOUR ,  Gregg HIGASHI ,  Gang HE

    IPC分类号： C30B25/10 ,  C30B25/02

    CPC分类号： C30B25/02 ,  C30B25/183 ,  C30B29/40 ,  C30B29/42 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262

    摘要： Embodiments of the invention generally relate processes for epitaxial growing Group III/V materials at high growth rates, such as about 30 μm/hr or greater, for example, about 40 μm/hr, about 50 μm/hr, about 55 μm/hr, about 60 μm/hr, or greater. The deposited Group III/V materials or films may be utilized in solar, semiconductor, or other electronic device applications. In some embodiments, the Group III/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a vapor deposition process. Subsequently, the Group III/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III/V materials are thin films of epitaxially grown layers which contain gallium arsenide, gallium aluminum arsenide, gallium indium arsenide, gallium indium arsenide nitride, gallium aluminum indium phosphide, phosphides thereof, nitrides thereof, derivatives thereof, alloys thereof, or combinations thereof.

    摘要翻译： 本发明的实施方案通常涉及以高生长速率例如约30μm/小时或更大，例如约40μm/小时，约50μm/小时，约55微米/小时的外延生长III / V族材料的方法 ，约60μm/小时或更大。 沉积的III / V族材料或薄膜可用于太阳能，半导体或其他电子设备应用中。 在一些实施例中，可以在气相沉积工艺期间在设置在支撑基板上或上方的牺牲层上形成或生长III / V族材料。 随后，在外延剥离（ELO）工艺期间，III / V族材料可以从支撑衬底移除。 III / V族材料是包含砷化镓，砷化镓砷化镓，砷化铟镓，砷化镓铟氮化物，镓铝磷化铟，其磷化物，其氮化物，其衍生物，其合金或组合的外延生长层的薄膜 其中。