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    Gating voltage control system and method for electrostatically actuating a micro-electromechanical device
    3.
    发明授权
    Gating voltage control system and method for electrostatically actuating a micro-electromechanical device 有权
    门电压控制系统和静电驱动微机电装置的方法

    公开(公告)号：US07473859B2

    公开(公告)日：2009-01-06

    申请号：US11622483

    申请日：2007-01-12

    申请人： Joshua Isaac Wright ,  Kanakasabapathi Subramanian ,  William James Premerlani ,  John Norton Park ,  Christopher Keimel ,  Long Que ,  Kuna Venkat Satya Rama Kishore ,  Abhijeet Dinkar Sathe ,  Xuefeng Wang ,  Edward Keith Howell

    发明人： Joshua Isaac Wright ,  Kanakasabapathi Subramanian ,  William James Premerlani ,  John Norton Park ,  Christopher Keimel ,  Long Que ,  Kuna Venkat Satya Rama Kishore ,  Abhijeet Dinkar Sathe ,  Xuefeng Wang ,  Edward Keith Howell

    IPC分类号： H01H51/22

    CPC分类号： H01H59/0009 ,  H01H47/22 ,  Y10T307/937

    摘要： A gating voltage control system and method are provided for electrostatically actuating a micro-electromechanical systems (MEMS) device, e.g., a MEMS switch. The device may comprise an electrostatically responsive actuator movable through a gap for actuating the device to a respective actuating condition corresponding to one of a first actuating condition (e.g., a closed switching condition) and a second actuating condition (e.g., an open switching condition). The gating voltage control system may comprise a drive circuit electrically coupled to a gate terminal of the device to apply a gating voltage. The gating voltage control system may further comprise a controller electrically coupled to the drive circuit to control the gating voltage applied to the gating terminal in accordance with a gating voltage control sequence. The gating voltage control sequence may comprise a first interval for ramping up the gating voltage to a voltage level for producing an electrostatic force sufficient to accelerate the actuator through a portion of the gap to be traversed by the actuator to reach a respective actuating condition. The gating voltage control sequence may further comprise a second interval for ramping down the gating voltage to a level sufficient to reduce the electrostatic force acting on the movable actuator. This allows reducing the amount of force at which the actuator engages a contact for establishing the first actuating condition, or avoiding an overshoot position of the actuator while reaching the second actuating condition.

    摘要翻译： 提供了门控电压控制系统和方法，用于静电致动微机电系统（MEMS）装置，例如MEMS开关。 该装置可以包括静电响应致动器，其可通过间隙移动，以将装置致动到对应于第一致动状态（例如，闭合开关状态）和第二致动状态（例如，开启状态）之一的相应致动状态， 。 门控电压控制系统可以包括电耦合到该器件的栅极端子以施加选通电压的驱动电路。 门控电压控制系统还可以包括电耦合到驱动电路的控制器，以根据门控电压控制顺序控制施加到门控端子的门控电压。 门控电压控制序列可以包括用于将门控电压升高到电压电平的第一间隔，用于产生足以通过由致动器穿过的间隙的一部分来加速致动器以达到相应的致动状态的静电力。 门控电压控制序列还可以包括用于将门控电压降低到足以减小作用在可移动致动器上的静电力的水平的第二间隔。 这允许减小致动器接合接触件以建立第一致动条件的力的量，或者避免致动器在达到第二致动状态时的过冲位置。

    Gating Voltage Control System And Method For Electrostatically Actuating A Micro-Electromechanical Device
    5.
    发明申请
    Gating Voltage Control System And Method For Electrostatically Actuating A Micro-Electromechanical Device 有权
    静电驱动微机电装置门控电压控制系统及方法

    公开(公告)号：US20080169707A1

    公开(公告)日：2008-07-17

    申请号：US11622483

    申请日：2007-01-12

    申请人： Joshua Isaac Wright ,  Kanakasabapathi Subramanian ,  William James Premerlani ,  John Norton Park ,  Christopher Keimel ,  Long Que ,  Kuna Venkat Satya Rama Kishore ,  Abhijeet Dinkar Sathe ,  Xuefeng Wang ,  Edward Keith Howell

    发明人： Joshua Isaac Wright ,  Kanakasabapathi Subramanian ,  William James Premerlani ,  John Norton Park ,  Christopher Keimel ,  Long Que ,  Kuna Venkat Satya Rama Kishore ,  Abhijeet Dinkar Sathe ,  Xuefeng Wang ,  Edward Keith Howell

    IPC分类号： H01H9/54

    CPC分类号： H01H59/0009 ,  H01H47/22 ,  Y10T307/937

    摘要： A gating voltage control system and method are provided for electrostatically actuating a micro-electromechanical systems (MEMS) device, e.g., a MEMS switch. The device may comprise an electrostatically responsive actuator movable through a gap for actuating the device to a respective actuating condition corresponding to one of a first actuating condition (e.g., a closed switching condition) and a second actuating condition (e.g., an open switching condition). The gating voltage control system may comprise a drive circuit electrically coupled to a gate terminal of the device to apply a gating voltage. The gating voltage control system may further comprise a controller electrically coupled to the drive circuit to control the gating voltage applied to the gating terminal in accordance with a gating voltage control sequence. The gating voltage control sequence may comprise a first interval for ramping up the gating voltage to a voltage level for producing an electrostatic force sufficient to accelerate the actuator through a portion of the gap to be traversed by the actuator to reach a respective actuating condition. The gating voltage control sequence may further comprise a second interval for ramping down the gating voltage to a level sufficient to reduce the electrostatic force acting on the movable actuator. This allows reducing the amount of force at which the actuator engages a contact for establishing the first actuating condition, or avoiding an overshoot position of the actuator while reaching the second actuating condition.

    摘要翻译： 提供了门控电压控制系统和方法，用于静电致动微机电系统（MEMS）装置，例如MEMS开关。 该装置可以包括静电响应致动器，其可通过间隙移动，以将装置致动到对应于第一致动状态（例如，闭合开关状态）和第二致动状态（例如，开启状态）之一的相应致动状态， 。 门控电压控制系统可以包括电耦合到该器件的栅极端子以施加选通电压的驱动电路。 门控电压控制系统还可以包括电耦合到驱动电路的控制器，以根据门控电压控制顺序控制施加到门控端子的门控电压。 门控电压控制序列可以包括用于将门控电压升高到电压电平的第一间隔，用于产生足以通过由致动器穿过的间隙的一部分来加速致动器以达到相应的致动状态的静电力。 门控电压控制序列还可以包括用于将门控电压降低到足以减小作用在可移动致动器上的静电力的水平的第二间隔。 这允许减小致动器接合接触件以建立第一致动条件的力的量，或者避免致动器在达到第二致动状态时的过冲位置。

    Switch structures
    8.
    发明授权
    Switch structures 有权
    开关结构

    公开(公告)号：US07928333B2

    公开(公告)日：2011-04-19

    申请号：US12541321

    申请日：2009-08-14

    申请人： Xuefeng Wang ,  Marco Francesco Aimi ,  Shubhra Bansal ,  Christopher Fred Keimel ,  Kuna Venkat Satya Rama Kishore ,  Kanakasabapathi Subramanian

    发明人： Xuefeng Wang ,  Marco Francesco Aimi ,  Shubhra Bansal ,  Christopher Fred Keimel ,  Kuna Venkat Satya Rama Kishore ,  Kanakasabapathi Subramanian

    IPC分类号： H01H57/00

    CPC分类号： H01H59/0009 ,  H01H2001/0084

    摘要： A device, such as a switch structure, is provided, the device including a contact and a conductive element. The conductive element can be configured to be selectively moveable between a non-contacting position, in which the conductive element is separated from the contact (in some cases by a distance less than or equal to about 4 μm, and in others by less than or equal to about 1 μm), and a contacting position, in which the conductive element contacts and establishes electrical communication with the contact. When the conductive element is disposed in the non-contacting position, the contact and the conductive element can be configured to support an electric field therebetween with a magnitude of greater than 320 V μm−1 and/or a potential difference of about 330 V or more.

    摘要翻译： 提供诸如开关结构的装置，该装置包括接触件和导电元件。 导电元件可以被配置为在非接触位置之间选择性地移动，在非接触位置中，导电元件与接触件分离（在一些情况下，距离小于或等于约4μm，而另一些距离小于或等于约4μm， 等于约1μm），以及接触位置，其中导电元件接触并建立与接触件的电连通。 当导电元件设置在非接触位置时，触点和导电元件可被配置为支撑其间具有大于320Vμm-1的大小和/或约330V的电位差的电场，或 更多。

    SWITCH STRUCTURES
    9.
    发明申请
    SWITCH STRUCTURES 有权
    开关结构

    公开(公告)号：US20110036690A1

    公开(公告)日：2011-02-17

    申请号：US12541321

    申请日：2009-08-14

    申请人： Xuefeng Wang ,  Marco Francesco Aimi ,  Shubhra Bansal ,  Christopher Fred Keimel ,  Kuna Venkat Satya Rama Kishore ,  Kanakasabapathi Subramanian

    发明人： Xuefeng Wang ,  Marco Francesco Aimi ,  Shubhra Bansal ,  Christopher Fred Keimel ,  Kuna Venkat Satya Rama Kishore ,  Kanakasabapathi Subramanian

    IPC分类号： H01H57/00

    CPC分类号： H01H59/0009 ,  H01H2001/0084

    摘要： A device, such as a switch structure, is provided, the device including a contact and a conductive element. The conductive element can be configured to be selectively moveable between a non-contacting position, in which the conductive element is separated from the contact (in some cases by a distance less than or equal to about 4 μm, and in others by less than or equal to about 1 μm), and a contacting position, in which the conductive element contacts and establishes electrical communication with the contact. When the conductive element is disposed in the non-contacting position, the contact and the conductive element can be configured to support an electric field therebetween with a magnitude of greater than 320 V μm−1 and/or a potential difference of about 330 V or more.

    摘要翻译： 提供诸如开关结构的装置，该装置包括接触件和导电元件。 导电元件可以被配置为在非接触位置之间选择性地移动，在非接触位置中，导电元件与接触件分离（在一些情况下，距离小于或等于约4μm，而另一些距离小于或等于约4μm， 等于约1μm），以及接触位置，其中导电元件接触并建立与接触件的电连通。 当导电元件设置在非接触位置时，触点和导电元件可被配置为支撑其间具有大于320Vμm-1的大小和/或约330V的电位差的电场，或 更多。