公开(公告)号：US20060102607A1

公开(公告)日：2006-05-18

申请号：US11195380

申请日：2005-08-02

申请人： Bruce Adams ,  Dean Jennings ,  Aaron Hunter ,  Abhilash Mayur ,  Vijay Parihar ,  Timothy Thomas

发明人： Bruce Adams ,  Dean Jennings ,  Aaron Hunter ,  Abhilash Mayur ,  Vijay Parihar ,  Timothy Thomas

IPC分类号： B23K26/03 ,  B23K26/067

CPC分类号： G02B5/281 ,  G01J5/06 ,  H01S5/005 ,  H01S5/4012

摘要： A thermal processing system includes a source of laser radiation emitting at a laser wavelength, beam projection optics disposed between the reflective surface and a substrate support capable of holding a substrate to be processed, a pyrometer responsive to a pyrometer wavelength, and a wavelength responsive optical element having a first optical path for light in a first wavelength range including the laser wavelength, the first optical path being between the source of laser radiation and the beam projection optics, and a second optical path for light in a second wavelength range including the pyrometer wavelength, the second optical path being between the beam projection optics and the pyrometer. The system can further include a pyrometer wavelength blocking filter between the source of laser radiation and the wavelength responsive optical element.

公开(公告)号：US07772134B2

公开(公告)日：2010-08-10

申请号：US12546522

申请日：2009-08-24

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

IPC分类号： H01L21/00

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 一种热处理装置和方法，其中第一激光源例如以10.6μm发射的CO 2作为线束聚焦在硅晶片上，并且第二激光源例如在808nm处发射的GaAs激光棒是 作为围绕线束的较大波束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO2辐射的能量小于硅带隙能量，因此硅对其透明度不变，但长波长辐射被自由载流子吸收。

公开(公告)号：US20060234458A1

公开(公告)日：2006-10-19

申请号：US11105270

申请日：2005-04-13

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Ranish

IPC分类号： H01L21/336

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 将以10.6μm发光的第一激光源例如CO 2 2作为线束和第二激光源聚焦在硅晶片上的热处理装置和方法，例如， 在808nm处发射的GaAs激光棒作为围绕线束的较大光束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO 2辐射的能量小于硅带隙能量，因此硅对其透明，但是长波长辐射被自由载流子吸收。

公开(公告)号：US08242407B2

公开(公告)日：2012-08-14

申请号：US12825200

申请日：2010-06-28

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

IPC分类号： B23K26/067

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 一种热处理装置和方法，其中第一激光源例如以10.6μm发射的CO 2作为线束聚焦在硅晶片上，并且第二激光源例如在808nm处发射的GaAs激光棒是 作为围绕线束的较大波束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO2辐射的能量小于硅带隙能量，因此硅对其透明度不变，但长波长辐射被自由载流子吸收。

公开(公告)号：US07595208B2

公开(公告)日：2009-09-29

申请号：US11837055

申请日：2007-08-10

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

IPC分类号： H01L21/00

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 例如，将发射为10.6μm的CO 2的第一激光源聚焦在作为线束的硅晶片上的第一激光源和例如在808nm发射的GaAs激光棒的第二激光源的热处理装置和方法是 作为围绕线束的较大波束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO2辐射的能量小于硅带隙能量，因此硅对其透明度不变，但长波长辐射被自由载流子吸收。

公开(公告)号：US07279721B2

公开(公告)日：2007-10-09

申请号：US11105270

申请日：2005-04-13

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

IPC分类号： H01L33/00

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 将以10.6μm发光的第一激光源例如CO 2 2作为线束和第二激光源聚焦在硅晶片上的热处理装置和方法，例如， 在808nm处发射的GaAs激光棒作为围绕线束的较大光束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO 2辐射的能量小于硅带隙能量，因此硅对其透明，但是长波长辐射被自由载流子吸收。

公开(公告)号：US20060102599A1

公开(公告)日：2006-05-18

申请号：US11185454

申请日：2005-07-20

申请人： Bruce Adams ,  Dean Jennings ,  Aaron Hunter ,  Abhilash Mayur ,  Vijay Parihar

发明人： Bruce Adams ,  Dean Jennings ,  Aaron Hunter ,  Abhilash Mayur ,  Vijay Parihar

IPC分类号： B23K26/067

CPC分类号： B23K26/032 ,  B23K26/03 ,  B23K26/0604 ,  B23K26/0676 ,  B23K26/0738 ,  B23K26/702 ,  B23K2101/40

摘要： A thermal processing system includes a source of laser radiation having an array of lasers emitting light at a laser wavelength, a substrate support, optics disposed between said source and said substrate support for forming a line beam in a substrate plane of the substrate support from the light emitted by the source of laser radiation, and scanning apparatus for effecting movement of said line beam relative to said substrate support in a direction transverse to the longitudinal axis of said line beam. The system further includes a housing encompassing said optics, a light detector disposed inside said housing for sensing an ambient light level, a power supply coupled to the source of laser radiation, and a controller governing said power supply and responsive to said light detector for interrupting said power supply upon an increase in the output of said light detector above a threshold ambient level.

摘要翻译： 热处理系统包括激光辐射源，其具有发射激光波长的光的激光阵列，衬底支撑件，设置在所述源极和所述衬底支撑件之间的光学器件，用于在衬底支撑件的衬底平面中形成线束 由激光辐射源发射的光以及用于在垂直于所述线束的纵向轴线的方向上相对于所述衬底支撑件实现所述线束的运动的扫描装置。 该系统还包括包围所述光学元件的壳体，设置在所述壳体内用于感测环境光级别的光检测器，耦合到激光辐射源的电源，以及控制所述电源并响应于所述光检测器中断的控制器 所述电源在所述光检测器的输出增加超过阈值环境水平时。

公开(公告)号：US20060102605A1

公开(公告)日：2006-05-18

申请号：US11185649

申请日：2005-07-20

申请人： Bruce Adams ,  Dean Jennings ,  Abhilash Mayur ,  Vijay Parihar ,  Joseph Ranish

发明人： Bruce Adams ,  Dean Jennings ,  Abhilash Mayur ,  Vijay Parihar ,  Joseph Ranish

IPC分类号： B23K26/06

CPC分类号： G02B6/003 ,  G02B6/0046 ,  G02B6/0056 ,  G02B6/0068

摘要： Apparatus for thermally processing a semiconductor wafer includes an array of semiconductor laser emitters arranged in plural parallel rows extending along a slow axis, plural respective cylindrical lenses overlying respective ones of the rows of laser emitters for collimating light from the respective rows along a fast axis generally perpendicular to the slow axis, a homogenizing light pipe having an input face at a first end for receiving light from the plural cylindrical lenses and an output face at an opposite end, the light pipe comprising a pair of reflective walls extending between the input and output faces and separated from one another along the direction of the slow axis, and scanning apparatus for scanning light emitted from the homogenizing light pipe across the wafer in a scanning direction parallel to the fast axis.

摘要翻译： 用于热处理半导体晶片的装置包括布置成沿着慢轴延伸的多个平行列的半导体激光发射器的阵列，多个相应的柱形透镜，覆盖相应行的激光发射器，用于沿着快轴准直来自相应行的光 垂直于慢轴的均质化光管，其具有在第一端处的输入面用于接收来自多个柱面透镜的光和相对端的输出面，所述光管包括在输入和输出之间延伸的一对反射壁 并且沿着慢轴的方向彼此分离;以及扫描装置，用于在平行于快轴的扫描方向上扫描从均匀化光管发射的光，跨过晶片。

公开(公告)号：US08653408B2

公开(公告)日：2014-02-18

申请号：US13485666

申请日：2012-05-31

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

IPC分类号： B23K26/067

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 例如，将发射为10.6μm的CO 2的第一激光源聚焦在作为线束的硅晶片上的第一激光源和例如在808nm发射的GaAs激光棒的第二激光源的热处理装置和方法是 作为围绕线束的较大波束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO2辐射的能量小于硅带隙能量，因此硅对其透明度不变，但长波长辐射被自由载流子吸收。

公开(公告)号：US08890024B2

公开(公告)日：2014-11-18

申请号：US13485726

申请日：2012-05-31

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

IPC分类号： B23K26/06 ,  H01L21/268 ,  B23K26/073 ,  B23K26/00 ,  H01L21/324 ,  H01L21/20

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 一种热处理装置和方法，其中第一激光源例如以10.6μm发射的CO 2作为线束聚焦在硅晶片上，并且第二激光源例如在808nm处发射的GaAs激光棒是 作为围绕线束的较大波束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO2辐射的能量小于硅带隙能量，因此硅对其透明度不变，但长波长辐射被自由载流子吸收。