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公开(公告)号：US20110037464A1
公开(公告)日：2011-02-17
申请号：US12539437
申请日：2009-08-11
IPC分类号： G01R33/02
CPC分类号： G01R33/09 , G01R33/095 , H01L43/065 , H01L43/08
摘要： A magnetic field sensor employing a graphene sense layer, wherein the Lorentz force acting on charge carriers traveling through the sense layer causes a change in path of charge carriers traveling through the graphene layer. This change in path can be detected indicating the presence of a magnetic field. The sensor includes one or more gate electrodes that are separated from the graphene layer by a non-magnetic, electrically insulating material. The application of a gate voltage to the gate electrode alters the electrical resistance of the graphene layer and can be used to control the sensitivity and speed of the sensor.
摘要翻译： 采用石墨烯感应层的磁场传感器，其中作用在穿过感测层的电荷载流子上的洛伦兹力导致穿过石墨烯层的电荷载流子的路径变化。 可以检测到路径的这种变化，指示存在磁场。 传感器包括一个或多个通过非磁性的电绝缘材料与石墨烯层分离的栅电极。 栅极电压施加到栅极电极改变了石墨烯层的电阻，并且可以用于控制传感器的灵敏度和速度。
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2.发明授权Magnetic field sensor with graphene sense layer and ferromagnetic biasing layer below the sense layer 有权磁场传感器具有石墨烯感应层和感应层下方的铁磁偏置层公开(公告)号：US08189302B2
公开(公告)日：2012-05-29
申请号：US12880071
申请日：2010-09-11
IPC分类号： G11B5/33
CPC分类号： G11B5/3903 , G01R33/095 , G11B5/3993 , H01F10/123
摘要： A graphene magnetic field sensor has a ferromagnetic biasing layer located beneath and in close proximity to the graphene sense layer. The sensor includes a suitable substrate, the ferromagnetic biasing layer, the graphene sense layer, and an electrically insulating underlayer between the ferromagnetic biasing layer and the graphene sense layer. The underlayer may be a hexagonal boron-nitride (h-BN) layer, and the sensor may include a seed layer to facilitate the growth of the h-BN underlayer. The ferromagnetic biasing layer has perpendicular magnetic anisotropy with its magnetic moment oriented substantially perpendicular to the plane of the layer. The graphene magnetic field sensor based on the extraordinary magnetoresistance (EMR) effect may function as the magnetoresistive read head in a magnetic recording disk drive.
摘要翻译： 石墨烯磁场传感器具有位于石墨烯感测层下方并且非常接近石墨烯感测层的铁磁偏置层。 传感器包括合适的衬底，铁磁偏置层，石墨烯感测层以及铁磁偏置层和石墨烯感应层之间的电绝缘底层。 底层可以是六方氮化硼（h-BN）层，并且传感器可以包括种子层以促进h-BN底层的生长。 铁磁偏置层具有垂直的磁各向异性，其磁矩基本上垂直于层的平面定向。 基于异常磁阻（EMR）效应的石墨烯磁场传感器可以用作磁记录盘驱动器中的磁阻读取头。
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3.发明申请MAGNETIC FIELD SENSOR WITH GRAPHENE SENSE LAYER AND FERROMAGNETIC BIASING LAYER BELOW THE SENSE LAYER 有权磁感应传感器，具有感光层和感光层下面的感光层公开(公告)号：US20120063033A1
公开(公告)日：2012-03-15
申请号：US12880071
申请日：2010-09-11
CPC分类号： G11B5/3903 , G01R33/095 , G11B5/3993 , H01F10/123
摘要： A graphene magnetic field sensor has a ferromagnetic biasing layer located beneath and in close proximity to the graphene sense layer. The sensor includes a suitable substrate, the ferromagnetic biasing layer, the graphene sense layer, and an electrically insulating underlayer between the ferromagnetic biasing layer and the graphene sense layer. The underlayer may be a hexagonal boron-nitride (h-BN) layer, and the sensor may include a seed layer to facilitate the growth of the h-BN underlayer. The ferromagnetic biasing layer has perpendicular magnetic anisotropy with its magnetic moment oriented substantially perpendicular to the plane of the layer. The graphene magnetic field sensor based on the extraordinary magnetoresistance (EMR) effect may function as the magnetoresistive read head in a magnetic recording disk drive.
摘要翻译： 石墨烯磁场传感器具有位于石墨烯感测层下方并且非常接近石墨烯感测层的铁磁偏置层。 传感器包括合适的衬底，铁磁偏置层，石墨烯感测层以及铁磁偏置层和石墨烯感应层之间的电绝缘底层。 底层可以是六方氮化硼（h-BN）层，并且传感器可以包括种子层以促进h-BN底层的生长。 铁磁偏置层具有垂直的磁各向异性，其磁矩基本上垂直于层的平面定向。 基于异常磁阻（EMR）效应的石墨烯磁场传感器可以用作磁记录盘驱动器中的磁阻读取头。
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公开(公告)号：US08760817B2
公开(公告)日：2014-06-24
申请号：US12470827
申请日：2009-05-22
IPC分类号： G11B5/33
CPC分类号： G11B5/39 , G01R33/098 , G01R33/1284 , G11B5/398 , G11B2005/0005
摘要： A spin accumulation sensor having a three terminal design that allows the free layer to be located at the air bearing surface. A non-magnetic conductive spin transport layer extends from a free layer structure (located at the ABS) to a reference layer structure removed from the ABS. The sensor includes a current or voltage source for applying a current across a reference layer structure. The current or voltage source has a lead that is connected with the non-magnetic spin transport layer and also to electric ground. Circuitry for measuring a signal voltage measures a voltage between a shield that is electrically connected with the free layer structure and the ground. The free layer structure can include a spin diffusion layer that ensures that all spin current is completely dissipated before reaching the lead to the voltage source, thereby preventing shunting of the spin current to the voltage source.
摘要翻译： 具有允许自由层位于空气轴承表面的三端设计的自旋累积传感器。 非磁性导电自旋传输层从自由层结构（位于ABS处）延伸到从ABS去除的参考层结构。 传感器包括用于在参考层结构上施加电流的电流或电压源。 电流源或电压源具有与非磁性自旋传输层连接的引线，也与电接地连接。 用于测量信号电压的电路测量与自由层结构电连接的屏蔽与地之间的电压。 自由层结构可以包括自旋扩散层，其确保在到达电压源的引线之前所有自旋电流完全消散，从而防止自旋电流分流到电压源。
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5.发明授权Device for generating high frequency magnetic fields in a rest-frame of a magnetic medium 有权用于在磁介质的静止框架中产生高频磁场的装置公开(公告)号：US08514519B2
公开(公告)日：2013-08-20
申请号：US12603443
申请日：2009-10-21
CPC分类号： G11B5/3133 , G11B2005/001
摘要： A magnetic head having a magnetic wiggler structure for initiating a high frequency magnetic oscillation in a magnetic to improve media-writeability and increase data density. The wiggler structure includes a plurality of magnetic layers that are antiparallel coupled with one another across non-magnetic antiparallel coupling layers. The wiggler structure is arranged just up-track from the point of data writing so that the high frequency oscillation is initiated just prior to the writing of data on the magnetic media.
摘要翻译： 一种具有磁摆动结构的磁头，用于启动磁性中的高频磁振荡以提高介质可写性并增加数据密度。 摆动结构包括在非磁性反平行耦合层上彼此反平行耦合的多个磁性层。 摆动结构从数据写入的角度开始排列正好，从而在磁介质上写入数据之前开始高频振荡。
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6.发明申请IMPLEMENTING SPIN-TORQUE OSCILLATOR SENSING WITH ENHANCED DEMODULATOR FOR HARD DISK DRIVES 有权用于硬盘驱动器的增强型解调器实现旋转扭矩振荡器公开(公告)号：US20130148223A1
公开(公告)日：2013-06-13
申请号：US13316342
申请日：2011-12-09
申请人： Patrick Mesquita Braganca , Richard Leo Galbraith , Bruce Alvin Gurney , Neil Smith , Bruce Wilson , Rehan Ahmed Zakai
发明人： Patrick Mesquita Braganca , Richard Leo Galbraith , Bruce Alvin Gurney , Neil Smith , Bruce Wilson , Rehan Ahmed Zakai
CPC分类号： G11B5/02 , G01R33/093 , G01R33/1284 , G11B5/3903 , G11B20/10018 , G11B2005/0016 , G11B2220/2516 , H03B15/006
摘要： A method, apparatus, and system are provided for implementing spin-torque oscillator (STO) sensing with a demodulator for hard disk drives. The demodulator measures an instantaneous phase of the readback signal from a STO sensor and converts the readback signal into a signal that is proportional to the magnetic field affecting the STO frequency during a bit time. The converted signal is used for processing by conventional data detection electronics.
摘要翻译： 提供了一种用于实现用于硬盘驱动器的解调器的自旋扭矩振荡器（STO）感测的方法，装置和系统。 解调器测量来自STO传感器的回读信号的瞬时相位，并将回读信号转换成与位时间内影响STO频率的磁场成比例的信号。 转换的信号用于常规数据检测电子设备的处理。
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公开(公告)号：US20120307404A1
公开(公告)日：2012-12-06
申请号：US13149419
申请日：2011-05-31
CPC分类号： H01F10/3254 , G01R33/098 , G01R33/1284 , G11B5/3903 , G11B2005/0005 , H01F10/1936 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： A spin-torque oscillator (STO) has a single free ferromagnetic layer that forms part of both a giant magnetoresistance (GMR) structure with a nonmagnetic conductive spacer layer and a tunneling magnetoresistance (TMR) structure with a tunnel barrier layer. The STO has three electrical terminals that connect to electrical circuitry that provides a spin-torque excitation current through the conductive spacer layer and a lesser sense current through the tunnel barrier layer. When the STO is used as a magnetic field sensor, the excitation current causes the magnetization of the free layer to oscillate at a fixed base frequency in the absence of an external magnetic field. A detector coupled to the sense current detects shifts in the free layer magnetization oscillation frequency from the base frequency in response to external magnetic fields.
摘要翻译： 自旋转矩振荡器（STO）具有单个自由铁磁层，其形成具有非磁性导电间隔层的巨磁电阻（GMR）结构和具有隧道势垒层的隧道磁阻（TMR）结构的一部分。 STO具有三个电气端子，其连接到通过导电间隔层提供自旋转矩激励电流的电路和通过隧道势垒层的较小感测电流。 当STO用作磁场传感器时，激励电流使得自由层的磁化在没有外部磁场的情况下以固定的基频振荡。 耦合到感测电流的检测器响应于外部磁场检测自由层磁化振荡频率从基极频率的偏移。
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公开(公告)号：US08035932B2
公开(公告)日：2011-10-11
申请号：US11858816
申请日：2007-09-20
申请人： Bruce Alvin Gurney , Ernesto E. Marinero , Andrew Stuart Troup , David Arfon Williams , Joerg Wunderlich
发明人： Bruce Alvin Gurney , Ernesto E. Marinero , Andrew Stuart Troup , David Arfon Williams , Joerg Wunderlich
IPC分类号： G11B5/60
CPC分类号： G11B5/3993 , B82Y25/00 , G01R33/093 , G01R33/095 , G11B5/3903 , G11B2005/0002
摘要： A Lorentz magnetoresistive sensor having integrated signal amplification. The sensor is constructed upon a substrate such as a semiconductor material, and an amplification circuit such as transistor is constructed directly into the substrate on which the magnetoresistive device is constructed. This integrated signal amplification greatly enhances sensor performance by eliminating a great deal of signal noise that would otherwise be added to the read signal.
摘要翻译： 具有集成信号放大的洛伦兹磁阻传感器。 传感器构造在诸如半导体材料的衬底上，并且诸如晶体管的放大电路直接构成到其上构成磁阻器件的衬底中。 该集成信号放大通过消除否则将被添加到读取信号的大量信号噪声来大大提高传感器性能。
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9.发明授权公开(公告)号：US07881020B2
公开(公告)日：2011-02-01
申请号：US11747683
申请日：2007-05-11
申请人： Thomas Dudley Boone, Jr. , Liesl Folks , Bruce Alvin Gurney , Jordan Asher Katine , Ernesto E. Marinero , Neil Smith
发明人： Thomas Dudley Boone, Jr. , Liesl Folks , Bruce Alvin Gurney , Jordan Asher Katine , Ernesto E. Marinero , Neil Smith
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/095 , G11B5/398 , G11B5/3993 , G11C11/14 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： An extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system.
摘要翻译： 描述了具有减小的尺寸和增加的分辨率的非凡的磁阻传感器（EMR传感器）。 传感器包括接触磁性有源层的多个导电引线，并且还包括导电分路结构。 传感器和分路结构的导电引线可以以普通的光刻掩模和蚀刻工艺形成，使得它们彼此自对准。 这避免了需要对准多个光刻处理步骤，从而允许大大提高分辨率和减小引线间距。 EMR传感器可以形成有可靠近或位于空气轴承表面（ABS）的磁性活性层，以改善与数据记录系统的相邻磁性介质的磁间距。
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公开(公告)号：US07848060B2
公开(公告)日：2010-12-07
申请号：US12487345
申请日：2009-06-18
CPC分类号： G11B5/397 , G11B5/3993 , G11B5/59655
摘要： A magnetic storage system according to one embodiment includes magnetic media containing magnetic domain tracks; and at least one head for reading from the magnetic media, each head having: a first Extraordinary Magentoresistive (EMR) device for detecting magnetic fields of a first magnetic domain track; a second EMR device for detecting magnetic fields of a second magnetic domain track. The system further includes a slider for supporting the head; and a control unit coupled to the head for controlling operation of the head. A system according to another embodiment includes a first Extraordinary Magnetoresistive (EMR) device for detecting magnetic fields of a magnetic domain of interest. A system according to yet another embodiment includes an Extraordinary Magnetoresistive (EMR) device for deriving servoing information.
摘要翻译： 根据一个实施例的磁存储系统包括含有磁畴轨迹的磁介质; 以及用于从磁性介质读取的至少一个磁头，每个磁头具有：用于检测第一磁畴磁道的磁场的第一非均衡磁阻（EMR）装置; 用于检测第二磁畴轨道的磁场的第二EMR装置。 该系统还包括用于支撑头部的滑块; 以及耦合到头部用于控制头部的操作的控制单元。 根据另一实施例的系统包括用于检测感兴趣的磁畴的磁场的第一非均匀磁阻（EMR）装置。 根据又一实施例的系统包括用于导出伺服信息的非寻常磁阻（EMR）装置。
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