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1.发明申请DEVICE FOR GENERATING HIGH FREQUENCY MAGNETIC FIELDS IN A REST-FRAME OF A MAGNETIC MEDIUM 有权用于在磁性介质的静止框架中产生高频磁场的装置公开(公告)号：US20110090594A1
公开(公告)日：2011-04-21
申请号：US12603443
申请日：2009-10-21
IPC分类号： G11B5/23
CPC分类号： G11B5/3133 , G11B2005/001
摘要： A magnetic head having a magnetic wiggler structure for initiating a high frequency magnetic oscillation in a magnetic to improve media-writeability and increase data density. The wiggler structure includes a plurality of magnetic layers that are antiparallel coupled with one another across non-magnetic antiparallel coupling layers. The wiggler structure is arranged just up-track from the point of data writing so that the high frequency oscillation is initiated just prior to the writing of data on the magnetic media.
摘要翻译： 一种具有磁摆动结构的磁头，用于启动磁性中的高频磁振荡以提高介质可写性并增加数据密度。 摆动结构包括在非磁性反平行耦合层上彼此反平行耦合的多个磁性层。 摆动结构从数据写入的角度开始排列正好，从而在磁介质上写入数据之前开始高频振荡。
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2.发明授权Device for generating high frequency magnetic fields in a rest-frame of a magnetic medium 有权用于在磁介质的静止框架中产生高频磁场的装置公开(公告)号：US08514519B2
公开(公告)日：2013-08-20
申请号：US12603443
申请日：2009-10-21
CPC分类号： G11B5/3133 , G11B2005/001
摘要： A magnetic head having a magnetic wiggler structure for initiating a high frequency magnetic oscillation in a magnetic to improve media-writeability and increase data density. The wiggler structure includes a plurality of magnetic layers that are antiparallel coupled with one another across non-magnetic antiparallel coupling layers. The wiggler structure is arranged just up-track from the point of data writing so that the high frequency oscillation is initiated just prior to the writing of data on the magnetic media.
摘要翻译： 一种具有磁摆动结构的磁头，用于启动磁性中的高频磁振荡以提高介质可写性并增加数据密度。 摆动结构包括在非磁性反平行耦合层上彼此反平行耦合的多个磁性层。 摆动结构从数据写入的角度开始排列正好，从而在磁介质上写入数据之前开始高频振荡。
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3.发明授权公开(公告)号：US06280813B1
公开(公告)日：2001-08-28
申请号：US09416364
申请日：1999-10-08
申请人： Matthew Joseph Carey , Eric Edward Fullerton , Bruce Alvin Gurney , Hal Jervis Rosen , Manfred Ernst Schabes
发明人： Matthew Joseph Carey , Eric Edward Fullerton , Bruce Alvin Gurney , Hal Jervis Rosen , Manfred Ernst Schabes
IPC分类号： B32B302
CPC分类号： C23C28/021 , C23C28/00 , C23C28/023 , C23C28/42 , G11B5/66
摘要： A magnetic recording medium for data storage uses a magnetic recording layer having at least two ferromagnetic films antiferromagnetically coupled together across a nonferromagnetic spacer film. The magnetic moments of the two antiferromagnetically-coupled films are oriented antiparallel, and thus the net remanent magnetization-thickness product (Mrt) of the recording layer is the difference in the Mrt values of the two ferromagnetic films. This reduction in Mrt is accomplished without a reduction in the thermal stability of the recording medium because the volumes of the grains in the antiferromagnetically-coupled films add constructively. In a magnetic recording rigid disk application, the magnetic layer comprises two ferromagnetic films, each a granular film of a sputter deposited CoPtCrB alloy, separated by a Ru spacer film having a thickness to maximize the antiferromagnetic exchange coupling between the two CoPtCrB films. One of the ferromagnetic films is made thicker than the other, but the thicknesses are chosen so that the net moment in zero applied magnetic field is low, but nonzero.
摘要翻译： 用于数据存储的磁记录介质使用具有至少两个铁磁膜的磁记录层，其通过非铁磁间隔膜反铁磁耦合在一起。 两个反铁磁耦合薄膜的磁矩定向反平行，因此记录层的净残磁强度 - 厚度积（Mrt）是两个铁磁膜的Mrt值之差。 由于反铁磁耦合膜中的晶粒的体积增加，所以Mrt的这种减少是在记录介质的热稳定性降低的情况下完成的。 在磁记录刚性盘应用中，磁性层包括两个铁磁膜，每个是由溅射沉积的CoPtCrB合金的粒状膜，由具有厚度的Ru隔离膜隔开，以使两个CoPtCrB膜之间的反铁磁交换耦合最大化。 其中一个铁磁膜比另一个更厚，但是选择厚度使得零施加磁场的净力矩低，但非零。
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4.发明授权公开(公告)号：US06594100B2
公开(公告)日：2003-07-15
申请号：US09903959
申请日：2001-07-11
申请人： Matthew Joseph Carey , Eric Edward Fullerton , Bruce Alvin Gurney , Hal Jervis Rosen , Manfred Ernst Schabes
发明人： Matthew Joseph Carey , Eric Edward Fullerton , Bruce Alvin Gurney , Hal Jervis Rosen , Manfred Ernst Schabes
IPC分类号： G11B503
CPC分类号： C23C28/021 , C23C28/00 , C23C28/023 , C23C28/42 , G11B5/66
摘要： A method for writing data on a magnetic recording medium includes providing a magnetic recording layer having at least two ferromagnetic films antiferromagnetically coupled together across a nonferromagnetic spacer film, with one of the ferromagnetic films having a greater magnetic moment than the other. A positive write field is applied to a first region to align the moments of both ferromagnetic films with the positive field, and then a negative write field is applied to an adjacent region to align the moments of both ferromagnetic films with the negative field. When the medium is moved away from the write fields, the moment of the ferromagnetic film with the lesser moment in each region flips to be antiparallel to the moment of the other ferromagnetic film in its region. The result is that the adjacent regions become adjacent magnetized domains with the transition between the domains representative of the written data.
摘要翻译： 一种在磁记录介质上写入数据的方法包括提供具有至少两个铁磁膜的磁记录层，所述至少两个铁磁膜在非铁磁隔离膜上反铁磁耦合在一起，其中一个铁磁膜具有比另一个更大的磁矩。 将正写入场施加到第一区域以将两个铁磁膜的力矩与正场对准，然后将负写入场施加到相邻区域以将两个铁磁膜的力矩与负场对准。 当介质从写入场移动时，每个区域中具有较小力矩的铁磁膜的力矩翻转成与其区域中的另一个铁磁膜的时刻反平行。 结果是相邻区域变成相邻的磁化域，其中代表写入数据的域之间的转变。
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公开(公告)号：US20100328799A1
公开(公告)日：2010-12-30
申请号：US12492050
申请日：2009-06-25
CPC分类号： G01R33/1284 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B2005/0016 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： A spin torque oscillation magnetoresistive sensor for measuring a magnetic field. The sensor uses a change in precessional oscillation frequency of a magnetization of a magnetic layer to determine the magnitude of a magnetic field. The sensor can include a magnetic free layer, a magnetic pinned layer and a non-magnetic layer sandwiched therebetween. Circuitry is connected with these layers to induce an electrical current through the layers. Spin polarization of electrons traveling through the device causes a spin torque induced precession of the magnetization of one or more of the layers. The frequency of this oscillation modulates in response to a magnetic field. The modulation of the oscillation frequency can be measured to detect the presence of the magnetic field, and determine its magnitude.
摘要翻译： 用于测量磁场的自旋扭矩振荡磁阻传感器。 传感器使用磁性层的磁化的进动振荡频率的变化来确定磁场的大小。 传感器可以包括磁性自由层，磁性被钉扎层和夹在其间的非磁性层。 电路与这些层连接以引起电流通过层。 穿过器件的电子的旋转极化导致自旋转矩引起一个或多个层的磁化的进动。 该振荡的频率响应于磁场而调制。 可以测量振荡频率的调制以检测磁场的存在，并确定其幅度。
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公开(公告)号：US08259409B2
公开(公告)日：2012-09-04
申请号：US12492050
申请日：2009-06-25
IPC分类号： G11B5/33
CPC分类号： G01R33/1284 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B2005/0016 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： A spin torque oscillation magnetoresistive sensor for measuring a magnetic field. The sensor uses a change in precessional oscillation frequency of a magnetization of a magnetic layer to determine the magnitude of a magnetic field. The sensor can include a magnetic free layer, a magnetic pinned layer and a non-magnetic layer sandwiched therebetween. Circuitry is connected with these layers to induce an electrical current through the layers. Spin polarization of electrons traveling through the device causes a spin torque induced precession of the magnetization of one or more of the layers. The frequency of this oscillation modulates in response to a magnetic field. The modulation of the oscillation frequency can be measured to detect the presence of the magnetic field, and determine its magnitude.
摘要翻译： 用于测量磁场的自旋扭矩振荡磁阻传感器。 传感器使用磁性层的磁化的进动振荡频率的变化来确定磁场的大小。 传感器可以包括磁性自由层，磁性被钉扎层和夹在其间的非磁性层。 电路与这些层连接以引起电流通过层。 穿过器件的电子的旋转极化导致自旋转矩引起一个或多个层的磁化的进动。 该振荡的频率响应于磁场而调制。 可以测量振荡频率的调制以检测磁场的存在，并确定其幅度。
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7.发明授权Multiple extraordinary magnetoresistive (EMR) sensor utilizing both current leads 失效使用两个电流引线的多个非凡磁阻（EMR）传感器公开(公告)号：US07502206B2
公开(公告)日：2009-03-10
申请号：US11492375
申请日：2006-07-24
IPC分类号： G11B5/33
CPC分类号： G11B5/3948 , G11C11/14
摘要： An extraordinary magnetoresistive device EMR sensor that is capable of reading two separate tracks of data simultaneously. The EMR sensor has a semiconductor structure with an electrically conductive shunt structure at one side. The other side of the semiconductor structure is connected with a pair of current leads. Each of the current leads is disposed between a pair of voltage leads. Each pair of voltage leads is capable of independently reading a magnetic signal by measuring the voltage potential change across the pair of voltage leads. The EMR structure minimizes the number of leads needed to read two magnetic signals by using a single pair of current leads to read two tracks of data.
摘要翻译： 一个非凡的磁阻器件EMR传感器，能够同时读取两个独立的数据轨迹。 EMR传感器具有在一侧具有导电分流结构的半导体结构。 半导体结构的另一侧与一对电流引线连接。 每个电流引线设置在一对电压引线之间。 每对电压引线可以通过测量一对电压引线上的电压电位变化来独立读取磁信号。 EMR结构通过使用单对电流引线读取两个数据轨迹来最小化读取两个磁信号所需的引线数量。
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8.发明申请Multiple extraordinary magnetoresistive (EMR) sensor utilizing both current leads 失效使用两个电流引线的多个非凡磁阻（EMR）传感器公开(公告)号：US20080019055A1
公开(公告)日：2008-01-24
申请号：US11492375
申请日：2006-07-24
IPC分类号： G11B5/33
CPC分类号： G11B5/3948 , G11C11/14
摘要： An extraordinary magnetoresistive device EMR sensor that is capable of reading two separate tracks of data simultaneously. The EMR sensor has a semiconductor structure with an electrically conductive shunt structure at one side. The other side of the semiconductor structure is connected with a pair of current leads. Each of the current leads is disposed between a pair of voltage leads. Each pair of voltage leads is capable of independently reading a magnetic signal by measuring the voltage potential change across the pair of voltage leads. The EMR structure minimizes the number of leads needed to read two magnetic signals by using a single pair of current leads to read two tracks of data.
摘要翻译： 一个非凡的磁阻器件EMR传感器，能够同时读取两个独立的数据轨迹。 EMR传感器具有在一侧具有导电分流结构的半导体结构。 半导体结构的另一侧与一对电流引线连接。 每个电流引线设置在一对电压引线之间。 每对电压引线可以通过测量一对电压引线上的电压电位变化来独立读取磁信号。 EMR结构通过使用单对电流引线读取两个数据轨迹来最小化读取两个磁信号所需的引线数量。
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公开(公告)号：US08760817B2
公开(公告)日：2014-06-24
申请号：US12470827
申请日：2009-05-22
IPC分类号： G11B5/33
CPC分类号： G11B5/39 , G01R33/098 , G01R33/1284 , G11B5/398 , G11B2005/0005
摘要： A spin accumulation sensor having a three terminal design that allows the free layer to be located at the air bearing surface. A non-magnetic conductive spin transport layer extends from a free layer structure (located at the ABS) to a reference layer structure removed from the ABS. The sensor includes a current or voltage source for applying a current across a reference layer structure. The current or voltage source has a lead that is connected with the non-magnetic spin transport layer and also to electric ground. Circuitry for measuring a signal voltage measures a voltage between a shield that is electrically connected with the free layer structure and the ground. The free layer structure can include a spin diffusion layer that ensures that all spin current is completely dissipated before reaching the lead to the voltage source, thereby preventing shunting of the spin current to the voltage source.
摘要翻译： 具有允许自由层位于空气轴承表面的三端设计的自旋累积传感器。 非磁性导电自旋传输层从自由层结构（位于ABS处）延伸到从ABS去除的参考层结构。 传感器包括用于在参考层结构上施加电流的电流或电压源。 电流源或电压源具有与非磁性自旋传输层连接的引线，也与电接地连接。 用于测量信号电压的电路测量与自由层结构电连接的屏蔽与地之间的电压。 自由层结构可以包括自旋扩散层，其确保在到达电压源的引线之前所有自旋电流完全消散，从而防止自旋电流分流到电压源。
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10.发明申请IMPLEMENTING SPIN-TORQUE OSCILLATOR SENSING WITH ENHANCED DEMODULATOR FOR HARD DISK DRIVES 有权用于硬盘驱动器的增强型解调器实现旋转扭矩振荡器公开(公告)号：US20130148223A1
公开(公告)日：2013-06-13
申请号：US13316342
申请日：2011-12-09
申请人： Patrick Mesquita Braganca , Richard Leo Galbraith , Bruce Alvin Gurney , Neil Smith , Bruce Wilson , Rehan Ahmed Zakai
发明人： Patrick Mesquita Braganca , Richard Leo Galbraith , Bruce Alvin Gurney , Neil Smith , Bruce Wilson , Rehan Ahmed Zakai
CPC分类号： G11B5/02 , G01R33/093 , G01R33/1284 , G11B5/3903 , G11B20/10018 , G11B2005/0016 , G11B2220/2516 , H03B15/006
摘要： A method, apparatus, and system are provided for implementing spin-torque oscillator (STO) sensing with a demodulator for hard disk drives. The demodulator measures an instantaneous phase of the readback signal from a STO sensor and converts the readback signal into a signal that is proportional to the magnetic field affecting the STO frequency during a bit time. The converted signal is used for processing by conventional data detection electronics.
摘要翻译： 提供了一种用于实现用于硬盘驱动器的解调器的自旋扭矩振荡器（STO）感测的方法，装置和系统。 解调器测量来自STO传感器的回读信号的瞬时相位，并将回读信号转换成与位时间内影响STO频率的磁场成比例的信号。 转换的信号用于常规数据检测电子设备的处理。
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