Method and installation for the densification of substrates by means of chemical vapor infiltration
    1.
    发明授权
    Method and installation for the densification of substrates by means of chemical vapor infiltration 有权
    通过化学气相渗透使基材致密化的方法和安装

    公开(公告)号:US07691440B2

    公开(公告)日:2010-04-06

    申请号:US10475464

    申请日:2003-01-14

    Abstract: A method of densifying porous substrates by chemical vapor infiltration comprises loading porous substrates for densification in a loading zone of an enclosure (10), heating the internal volume of the enclosure, and introducing a reagent gas into the enclosure though an inlet situated at one end of the enclosure. Before coming into contact with substrates (20) situated in the loading zone, the reagent gas admitted into the enclosure is preheated, at least in part, by passing along a duct (30) connected to the gas inlet and extending through the loading zone, the duct being raised to the temperature inside the enclosure, and the preheated reagent gas is distributed in the loading zone through one or more openings (33) formed in the side wall (32) of the duct, along the duct.

    Abstract translation: 通过化学气相渗透致密化多孔基材的方法包括在壳体(10)的装载区域中加载多孔基材用于致密化,加热外壳的内部体积,并且通过位于一端的入口将反应气体引入外壳 的外壳。 在与位于装载区域中的基板(20)接触之前,允许进入外壳的反应气体至少部分地通过连接到气体入口并延伸穿过装载区域的管道(30)进行预热, 所述管道升高到所述外壳内部的温度,并且所述预热的反应气体沿着所述管道通过形成在所述管道的侧壁(32)中的一个或多个开口(33)分布在所述装载区域中。

    METHOD OF DENSIFYING THIN POROUS SUBSTRATES BY CHEMICAL VAPOR INFILTRATION, AND A LOADING DEVICE FOR SUCH SUBSTRATES
    3.
    发明申请
    METHOD OF DENSIFYING THIN POROUS SUBSTRATES BY CHEMICAL VAPOR INFILTRATION, AND A LOADING DEVICE FOR SUCH SUBSTRATES 有权
    通过化学气相渗透法测量多孔基底的方法,以及用于这种基底的加载装置

    公开(公告)号:US20120171375A1

    公开(公告)日:2012-07-05

    申请号:US13420014

    申请日:2012-03-14

    CPC classification number: C23C16/045 C23C16/45578 C23C16/4587

    Abstract: To densify thin porous substrates (1) by chemical vapor infiltration, the invention proposes using loading tooling (10) comprising a tubular duct (10) disposed between first and second plates (12, 13) and around which the thin substrates for densification are disposed radially. The tooling as loaded in this way is then placed inside a reaction chamber (20) in an infiltration oven having a reactive gas admission inlet (21) connected to the tubular duct (11) to enable a reactive gas to be admitted into the duct which distributes the gas along the main faces on the substrates (1) in a flow direction that is essentially radial. The reactive gas can also flow in the opposite direction, i.e. it can be admitted into the tooling (10) from its outer envelope (16) and can be removed via the duct (11).

    Abstract translation: 为了通过化学气相渗透致密化多孔基底(1),本发明提出使用装载工具(10),其包括设置在第一和第二板(12,13)之间的管状管道(10),并且用于致密化的薄基底 径向地 然后以这种方式装载的工具然后放置在具有连接到管状管道(11)的反应气体进入入口(21)的浸入式烘箱中的反应室(20)内,以使反应气体能够进入管道 沿着基本上径向的流动方向沿着基板(1)上的主面分布气体。 反应气体也可以在相反的方向上流动,即可以从其外壳(16)进入工具(10),并且可以经由管道(11)移除。

    Method of densifying thin porous substrates by chemical vapor infiltration, and a loading device for such substrates
    4.
    发明授权
    Method of densifying thin porous substrates by chemical vapor infiltration, and a loading device for such substrates 有权
    通过化学气相渗透致密化多孔基材的方法,以及用于这种基材的加载装置

    公开(公告)号:US08491963B2

    公开(公告)日:2013-07-23

    申请号:US13420014

    申请日:2012-03-14

    CPC classification number: C23C16/045 C23C16/45578 C23C16/4587

    Abstract: To densify thin porous substrates (1) by chemical vapor infiltration, the invention proposes using loading tooling (10) comprising a tubular duct (10) disposed between first and second plates (12, 13) and around which the thin substrates for densification are disposed radially. The tooling as loaded in this way is then placed inside a reaction chamber (20) in an infiltration oven having a reactive gas admission inlet (21) connected to the tubular duct (11) to enable a reactive gas to be admitted into the duct which distributes the gas along the main faces on the substrates (1) in a flow direction that is essentially radial. The reactive gas can also flow in the opposite direction, i.e. it can be admitted into the tooling (10) from its outer envelope (16) and can be removed via the duct (11).

    Abstract translation: 为了通过化学气相渗透致密化多孔基底(1),本发明提出使用装载工具(10),其包括设置在第一和第二板(12,13)之间的管状管道(10),并且用于致密化的薄基底 径向地 然后以这种方式装载的工具然后放置在具有连接到管状管道(11)的反应气体进入入口(21)的浸入式烘箱中的反应室(20)内,以使反应气体能够进入管道 沿着基本上径向的流动方向沿着基板(1)上的主面分布气体。 反应气体也可以在相反的方向上流动,即可以从其外壳(16)进入工具(10),并且可以经由管道(11)移除。

    Method of densifying thin porous substrates by chemical vapor infiltration, and a loading device for such substrates
    5.
    发明授权
    Method of densifying thin porous substrates by chemical vapor infiltration, and a loading device for such substrates 有权
    通过化学气相渗透致密化多孔基材的方法,以及用于这种基材的加载装置

    公开(公告)号:US08163088B2

    公开(公告)日:2012-04-24

    申请号:US11884597

    申请日:2006-02-16

    CPC classification number: C23C16/045 C23C16/45578 C23C16/4587

    Abstract: To densify thin porous substrates (1) by chemical vapor infiltration, the invention proposes using loading tooling (10) comprising a tubular duct (10) disposed between first and second plates (12, 13) and around which the thin substrates for densification are disposed radially. The tooling as loaded in this way is then placed inside a reaction chamber (20) in an infiltration oven having a reactive gas admission inlet (21) connected to the tubular duct (11) to enable a reactive gas to be admitted into the duct which distributes the gas along the main faces on the substrates (1) in a flow direction that is essentially radial. The reactive gas can also flow in the opposite direction, i.e. it can be admitted into the tooling (10) from its outer envelope (16) and can be removed via the duct (11).

    Abstract translation: 为了通过化学气相渗透致密化多孔基底(1),本发明提出使用装载工具(10),其包括设置在第一和第二板(12,13)之间的管状管道(10),并且用于致密化的薄基底 径向地 然后以这种方式装载的工具然后放置在具有连接到管状管道(11)的反应气体进入入口(21)的浸入式烘箱中的反应室(20)内,以使反应气体能够进入管道 沿着基本上径向的流动方向沿着基板(1)上的主面分布气体。 反应气体也可以在相反的方向上流动,即可以从其外壳(16)进入工具(10),并且可以经由管道(11)移除。

Patent Agency Ranking