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1.发明申请Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate 失效用于同时产生至少一对半导体结构的方法，每个半导体结构在衬底上包括至少一个有用层公开(公告)号：US20060286770A1
公开(公告)日：2006-12-21
申请号：US11509047
申请日：2006-08-24
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A method for producing a semiconductor structure that includes at least one useful layer on a substrate. This method includes providing a source substrate with a zone of weakness therein that defines a relatively thick useful layer between the zone of weakness and a front face of the source substrate; bonding the front face of the source substrate to a support substrate and detaching the useful layer from the source substrate at the zone of weakness to transfer the useful layer to the support substrate; implanting atomic species into a free face of the useful layer to a controlled mean implantation depth therein to form a zone of weakness within the useful layer that defines front and rear useful layers, with the rear useful layer contacting the source substrate and the front useful layer containing a greater concentration of defects; bonding a stiffening substrate to the free face of the front useful layer after implantation of the atomic species; and detaching the front useful layer from the rear useful layer along the zone of weakness to form a semiconductor structure comprising the support substrate and the rear useful layer thereon. The structures obtained can be used in the fields of electronics, optoelectronics or optics.
摘要翻译： 一种用于制造半导体结构的方法，所述半导体结构在衬底上包括至少一个有用层。 该方法包括提供源极基底中的弱化区域，其在弱化区域和源极基底的前面之间限定相对较厚的有用层; 将源极基板的正面粘合到支撑基板上，并在弱化区域将有用层与源极基板分离，以将有用层转移到支撑基板; 将原子物质植入有用层的自由面中，以在其中形成受控的平均注入深度，以在限定前后有用层的有用层内形成弱化区，其中后部有用层与源极基底和前部有用层接触 含有较大浓度的缺陷; 在加入原子物质之后将加强基底粘合到前有用层的自由面上; 并且沿着弱化区从后部有用层分离前部有用层，以形成包括支撑基板和其上的后部有用层的半导体结构。 所获得的结构可用于电子学，光电子学或光学领域。
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2.发明授权Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate 失效用于同时产生至少一对半导体结构的方法，每个半导体结构在衬底上包括至少一个有用层公开(公告)号：US07115481B2
公开(公告)日：2006-10-03
申请号：US10686084
申请日：2003-10-14
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate. The method includes providing an initial structure that includes a useful layer having a front face on a support substrate. Atomic species are implanted into the useful layer to a controlled mean implantation depth to form a zone of weakness within the useful layer that defines first and second useful layers. Next, a stiffening substrate is bonded to the front face of the initial structure. The first useful layer is then detached from the second useful layer along the zone of weakness to obtain a pair of semiconductor structures with a first structure including the stiffening substrate and the first useful layer and a second structure including the support substrate and the second useful layer. The structures obtained can be used in the fields of electronics, optoelectronics or optics.
摘要翻译： 一种用于同时产生至少一对半导体结构的方法，每个半导体结构在衬底上包括至少一个有用层。 该方法包括提供初始结构，其包括在支撑衬底上具有正面的有用层。 将原子物质植入有用层中至受控的平均植入深度，以形成限定第一和第二有用层的有用层内的弱点区域。 接下来，将加强基板粘合到初始结构的正面。 然后沿着弱化区从第二有用层分离第一有用层，以获得一对具有第一结构的半导体结构，该第一结构包括加强衬底和第一有用层，以及包括支撑衬底和第二有用层的第二结构 。 所获得的结构可用于电子学，光电子学或光学领域。
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3.发明授权Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate 失效用于同时产生至少一对半导体结构的方法，每个半导体结构在衬底上包括至少一个有用层公开(公告)号：US07407867B2
公开(公告)日：2008-08-05
申请号：US11509047
申请日：2006-08-24
IPC分类号： H01L21/20
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A method for producing a semiconductor structure that includes at least one useful layer on a substrate. This method includes providing a source substrate with a zone of weakness therein that defines a relatively thick useful layer between the zone of weakness and a front face of the source substrate; bonding the front face of the source substrate to a support substrate and detaching the useful layer from the source substrate at the zone of weakness to transfer the useful layer to the support substrate; implanting atomic species into a free face of the useful layer to a controlled mean implantation depth therein to form a zone of weakness within the useful layer that defines front and rear useful layers, with the rear useful layer contacting the source substrate and the front useful layer containing a greater concentration of defects; bonding a stiffening substrate to the free face of the front useful layer after implantation of the atomic species; and detaching the front useful layer from the rear useful layer along the zone of weakness to form a semiconductor structure comprising the support substrate and the rear useful layer thereon. The structures obtained can be used in the fields of electronics, optoelectronics or optics.
摘要翻译： 一种用于制造半导体结构的方法，所述半导体结构在衬底上包括至少一个有用层。 该方法包括提供源极基底中的弱化区域，其在弱化区域和源极基底的前面之间限定相对较厚的有用层; 将源极基板的正面粘合到支撑基板上，并在弱化区域将有用层与源极基板分离，以将有用层转移到支撑基板; 将原子物质植入有用层的自由面中，以在其中形成受控的平均注入深度，以在限定前后有用层的有用层内形成弱化区，其中后部有用层与源极基底和前部有用层接触 含有较大浓度的缺陷; 在加入原子物质之后将加强基底粘合到前有用层的自由面上; 并且沿着弱化区从后部有用层分离前部有用层，以形成包括支撑基板和其上的后部有用层的半导体结构。 所获得的结构可用于电子学，光电子学或光学领域。
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4.发明申请Recycling a wafer comprising a buffer layer, after having separated a thin layer therefrom 有权在从其分离薄层之后回收包含缓冲层的晶片公开(公告)号：US20060076578A1
公开(公告)日：2006-04-13
申请号：US11285008
申请日：2005-11-23
申请人： Bruno Ghyselen , Cecile Aulnette , Benedite Osternaud , Yves-Mathieu Le Vaillant , Takeshi Akatsu
发明人： Bruno Ghyselen , Cecile Aulnette , Benedite Osternaud , Yves-Mathieu Le Vaillant , Takeshi Akatsu
IPC分类号： H01L31/109
CPC分类号： H01L21/02032
摘要： A donor wafer resulting from a method of recycling the wafer after detaching at least one useful layer. The donor wafer includes a substrate; a buffer structure on the substrate; a protective layer associated with the buffer structure; and a post detachment layer located above the buffer structure and presenting projections or rough portions on its surface. The protective layer prevents removal of the entire buffer structure when the post detachment layer is removed.
摘要翻译： 由在分离至少一个有用层之后再循环晶片的方法产生的施主晶片。 施主晶片包括基板; 衬底上的缓冲结构; 与缓冲结构相关联的保护层; 以及位于缓冲结构上方的后分离层，并且在其表面上呈现突起或粗糙部分。 当去除后剥离层时，保护层防止整个缓冲结构的移除。
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5.发明申请Recycling of a wafer comprising a multi-layer structure after taking-off a thin layer 审中-公开在剥离薄层之后回收包括多层结构的晶片公开(公告)号：US20050167002A1
公开(公告)日：2005-08-04
申请号：US11075324
申请日：2005-03-07
IPC分类号： H01L21/762 , H01L29/00 , H01L21/00 , H01L21/46 , H01L21/84
CPC分类号： H01L21/02032 , H01L21/76254 , H01L21/76259
摘要： The invention relates to a substrate that includes a multi-layer structure on the surface of a donor wafer that has a thickness sufficient to form multiple useful layers for subsequent detachment. The layers may be formed of materials having sufficiently different properties such that they may be selectively removed. The layers of material may also include sub-layers that can be selectively removed from each other.
摘要翻译： 本发明涉及一种衬底，其在施主晶片的表面上包括多层结构，其具有足以形成用于随后拆卸的多个有用层的厚度。 这些层可以由具有足够不同性质的材料形成，使得它们可以被选择性地去除。 材料层还可以包括可以相互选择性地去除的子层。
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公开(公告)号：US20050070078A1
公开(公告)日：2005-03-31
申请号：US10753173
申请日：2004-01-06
IPC分类号： H01L21/20 , H01L21/762 , H01L21/22
CPC分类号： H01L21/76251 , H01L21/2007 , H01L21/76254 , Y10S438/933
摘要： The invention provides a method of producing a structure of a thin layer of semiconductor material on a support substrate. The thin layer is obtained from a donor substrate and includes an upper layer of semiconductor material. The method includes forming on the upper layer a bonding layer of a material that accepts diffusion from an element of the material of the upper layer, bonding the donor substrate from the side on which the bonding layer is formed on the upper layer to the support substrate, and diffusing the element from the upper layer into the bonding layer to homogenize the concentration of the element in the bonding layer and the upper layer. The result is that the thin layer of the structure is joined by the bonding layer to the upper layer.
摘要翻译： 本发明提供一种在支撑基板上制造半导体材料薄层结构的方法。 薄层从供体基底获得并且包括半导体材料的上层。 该方法包括在上层上形成接受来自上层材料的元素的扩散的材料的接合层，将施主衬底从上层上形成接合层的一侧粘合到支撑衬底上 并且将元件从上层扩散到接合层中以使结合层和上层中的元素的浓度均匀化。 结果是结构的薄层通过粘合层连接到上层。
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7.发明申请公开(公告)号：US20050191825A1
公开(公告)日：2005-09-01
申请号：US11032844
申请日：2005-01-10
IPC分类号： H01L21/02 , H01L21/20 , H01L21/762 , H01L27/12 , H01L21/00 , C30B1/00 , H01L21/30 , H01L21/36 , H01L21/46 , H01L21/84
CPC分类号： H01L21/76259 , H01L21/76254
摘要： A method for transferring a layer of semiconductor material from a wafer is described. The wafer includes a support substrate and an upper surface that includes a buffer layer of a material having a first lattice parameter. In an embodiment, the technique includes growing a strained layer on the buffer layer. The strained layer is made of a semiconductor material having a nominal lattice parameter that is substantially different from the first lattice parameter, and it is grown to a thickness that is sufficiently thin to avoid relaxation of the strain therein. The method also includes growing a relaxed layer on the strained layer. The relaxed layer is made of silicon and has a concentration of at least one other semiconductor material that has a nominal lattice parameter that is substantially identical to the first lattice parameter. The technique also includes providing a weakened zone in the buffer layer, and supplying energy to detach a structure at the weakened zone. The structure includes a portion of the buffer layer, the strained layer and the relaxed layer. Lastly; the method includes enriching the concentration of the at least one other semiconductor material in the relaxed layer of the structure.
摘要翻译： 描述了从晶片转移半导体材料层的方法。 晶片包括支撑基板和包括具有第一晶格参数的材料的缓冲层的上表面。 在一个实施例中，该技术包括在缓冲层上生长应变层。 应变层由具有与第一晶格参数基本不同的标称晶格参数的半导体材料制成，并且其生长到足够薄的厚度以避免其中的应变松弛。 该方法还包括在应变层上生长松弛层。 松弛层由硅制成，并且具有至少一种其它半导体材料的浓度，其具有基本上与第一晶格参数相同的标称晶格参数。 该技术还包括在缓冲层中提供弱化区域，并提供能量以在弱化区域分离结构。 该结构包括缓冲层的一部分，应变层和松弛层。 最后; 该方法包括在结构的松弛层中富集至少一种其它半导体材料的浓度。
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8.发明申请Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof 有权通过机械方式回收利用包括多层结构在内的薄片的薄片公开(公告)号：US20050189323A1
公开(公告)日：2005-09-01
申请号：US11075272
申请日：2005-03-07
IPC分类号： B44C1/22 , H01L21/302 , H01L21/762
CPC分类号： H01L21/02032 , H01L21/76254
摘要： The invention relates to a method of re-forming a useful layer on a donor wafer after taking off a useful layer formed of a material chosen from among semiconductor materials. The donor wafer includes in succession a substrate and a taking-off structure, the taking-off structure includes the taken-off useful layer before taking-off. The method includes a removal of material involving a portion of the donor wafer on the side where the useful layer has been taken off. The material is removed by mechanical means so as to preserve a portion of the taking-off structure to form at least one other useful layer which can be taken off after re-forming, without adding additional material to the wafer.
摘要翻译： 本发明涉及一种在从由半导体材料中选出的材料形成的有用层之后，在施主晶片上重新形成有用层的方法。 施主晶片连续地包括基板和起飞结构，起飞结构包括起飞前的起飞有用层。 该方法包括去除涉及在有用层被取下的一侧的施主晶片的一部分的材料。 通过机械方法去除材料，以便保留一部分起飞结构以形成至少一个其它可用的层，其可以在重新形成之后取下，而不向晶片添加额外的材料。
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公开(公告)号：US20050066886A1
公开(公告)日：2005-03-31
申请号：US10827437
申请日：2004-04-20
申请人： Takeshi Akatsu , Cecile Aulnette , Bruno Ghyselen
发明人： Takeshi Akatsu , Cecile Aulnette , Bruno Ghyselen
IPC分类号： C30B25/02 , C30B29/52 , H01L21/20 , H01L21/762 , C30B23/00 , C30B1/00 , C30B25/00 , C30B28/12 , C30B28/14 , H01L21/36
CPC分类号： H01L21/76254 , C30B25/02 , C30B29/52 , Y10S117/915
摘要： The present invention relates to a method of fabrication of a substrate for an epitaxial growth. A relaxed epitaxial base layer is obtained on an auxiliary substrate. The invention allows the fabrication of substrates with a more efficient epitaxial growth of a material with a desired lattice parameter on another material with a different lattice parameter. The material can be grown with a high thermodynamic and crystallographic stability. At least a part of the epitaxial base layer is transferred onto a carrier substrate, forming a base substrate, and growing the material of the epitaxial base layer is further grown on the carrier substrate.
摘要翻译： 本发明涉及一种外延生长用基板的制造方法。 在辅助基板上获得松弛的外延基层。 本发明允许用具有不同晶格参数的另一材料上具有期望的晶格参数的材料的更有效的外延生长来制造衬底。 该材料可以以高热力学和晶体学稳定性生长。 将外延基底层的至少一部分转移到载体基板上，形成基底基板，并且在载体基板上进一步生长外延基底层的材料。
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公开(公告)号：US07232488B2
公开(公告)日：2007-06-19
申请号：US10827437
申请日：2004-04-20
申请人： Takeshi Akatsu , Cecile Aulnette , Bruno Ghyselen
发明人： Takeshi Akatsu , Cecile Aulnette , Bruno Ghyselen
IPC分类号： C30B25/04
CPC分类号： H01L21/76254 , C30B25/02 , C30B29/52 , Y10S117/915
摘要： The present invention relates to a method of fabrication of a substrate for an epitaxial growth. A relaxed epitaxial base layer is obtained on an auxiliary substrate. The invention allows the fabrication of substrates with a more efficient epitaxial growth of a material with a desired lattice parameter on another material with a different lattice parameter. The material can be grown with a high thermodynamic and crystallographic stability. At least a part of the epitaxial base layer is transferred onto a carrier substrate, forming a base substrate, and growing the material of the epitaxial base layer is further grown on the carrier substrate.
摘要翻译： 本发明涉及一种外延生长用基板的制造方法。 在辅助基板上获得松弛的外延基层。 本发明允许用具有不同晶格参数的另一材料上具有期望的晶格参数的材料的更有效的外延生长来制造衬底。 该材料可以以高热力学和晶体学稳定性生长。 将外延基底层的至少一部分转移到载体基板上，形成基底基板，并且在载体基板上进一步生长外延基底层的材料。
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