公开(公告)号：US07463454B2

公开(公告)日：2008-12-09

申请号：US11818659

申请日：2007-06-14

申请人： Ubaldo Mastromatteo ,  Bruno Murari ,  Paolo Ferrari ,  Simone Sassolini

发明人： Ubaldo Mastromatteo ,  Bruno Murari ,  Paolo Ferrari ,  Simone Sassolini

IPC分类号： G11B5/56

CPC分类号： B81B3/0021 ,  H02N1/006

摘要： A micro-electro-mechanical device formed by a body of semiconductor material having a thickness and defining a mobile part and a fixed part. The mobile part is formed by a mobile platform, supporting arms extending from the mobile platform to the fixed part, and by mobile electrodes fixed to the mobile platform. The fixed part has fixed electrodes facing the mobile electrodes, a first biasing region fixed to the fixed electrodes, a second biasing region fixed to the supporting arms, and an insulation region of insulating material extending through the entire thickness of the body. The insulation region insulates electrically at least one between the first and the second biasing regions from the rest of the fixed part.

摘要翻译： 由具有厚度并限定可移动部分和固定部分的半导体材料体形成的微电子机械装置。 可移动部分由移动平台，从移动平台延伸到固定部分的支撑臂，以及固定到移动平台的移动电极形成。 固定部分具有面向移动电极的固定电极，固定到固定电极的第一偏置区域，固定到支撑臂的第二偏压区域以及延伸穿过主体整个厚度的绝缘材料的绝缘区域。 绝缘区域在第一和第二偏压区域之间至少一个与固定部件的其余部分绝缘。

公开(公告)号：US07208339B2

公开(公告)日：2007-04-24

申请号：US11063483

申请日：2005-02-22

申请人： Bruno Murari ,  Ubaldo Mastromatteo ,  Paolo Ferrari

发明人： Bruno Murari ,  Ubaldo Mastromatteo ,  Paolo Ferrari

IPC分类号： H01L21/00

CPC分类号： G02B27/0994

摘要： A micromachined device made of semiconductor material is formed by: a semiconductor body; an intermediate layer set on top of the semiconductor body; and a substrate, set on top of the intermediate layer. A cavity extends in the intermediate layer and is delimited laterally by bottom fixed regions, at the top by the substrate, and at the bottom by the semiconductor body. The bottom fixed regions form fixed electrodes, which extend in the intermediate layer towards the inside of the cavity. An oscillating element is formed in the substrate above the cavity and is separated from top fixed regions through trenches, which extend throughout the thickness of the substrate. The oscillating element is formed by an oscillating platform set above the cavity, and by mobile electrodes, which extend towards the top fixed regions in a staggered way with respect to the fixed electrodes. The fixed electrodes and mobile electrodes are thus comb-fingered in plan view but formed on different levels.

摘要翻译： 由半导体材料制成的微机械加工装置由半导体本体形成， 设置在半导体本体顶部的中间层; 以及设置在中间层顶部的基板。 空腔在中间层中延伸并且由底部固定区域在顶部限定，在顶部由衬底限定，并且在底部由半导体本体限定。 底部固定区域形成固定电极，其在中间层中延伸到空腔的内部。 振荡元件形成在空腔上方的衬底中，并且通过沟槽与顶部固定区域分离，其延伸贯穿衬底的厚度。 振荡元件由设置在空腔上方的振荡平台和通过相对于固定电极以交错方式朝着顶部固定区域延伸的移动电极形成。 因此，固定电极和移动电极在平面图中梳理，但形成在不同的水平上。

公开(公告)号：US06927470B2

公开(公告)日：2005-08-09

申请号：US10606660

申请日：2003-06-25

申请人： Bruno Murari ,  Ubaldo Mastromatteo ,  Paolo Ferrari

发明人： Bruno Murari ,  Ubaldo Mastromatteo ,  Paolo Ferrari

IPC分类号： G02B26/00 ,  G02B27/09 ,  H01L31/0232 ,  H01L31/0328

CPC分类号： G02B27/0994

摘要： A micromachined device made of semiconductor material is formed by: a semiconductor body; an intermediate layer set on top of the semiconductor body; and a substrate, set on top of the intermediate layer. A cavity extends in the intermediate layer and is delimited laterally by bottom fixed regions, at the top by the substrate, and at the bottom by the semiconductor body. The bottom fixed regions form fixed electrodes, which extend in the intermediate layer towards the inside of the cavity. An oscillating element is formed in the substrate above the cavity and is separated from top fixed regions through trenches, which extend throughout the thickness of the substrate. The oscillating element is formed by an oscillating platform set above the cavity, and by mobile electrodes, which extend towards the top fixed regions in a staggered way with respect to the fixed electrodes. The fixed electrodes and mobile electrodes are thus comb-fingered in plan view but formed on different levels.

摘要翻译： 由半导体材料制成的微机械加工装置由半导体本体形成， 设置在半导体本体顶部的中间层; 以及设置在中间层顶部的基板。 空腔在中间层中延伸并且由底部固定区域在顶部限定，在顶部由衬底限定，并且在底部由半导体本体限定。 底部固定区域形成固定电极，其在中间层中延伸到空腔的内部。 振荡元件形成在空腔上方的衬底中，并且通过沟槽与顶部固定区域分离，其延伸贯穿衬底的厚度。 振荡元件由设置在空腔上方的振荡平台和通过相对于固定电极以交错方式朝着顶部固定区域延伸的移动电极形成。 因此，固定电极和移动电极在平面图中梳理，但形成在不同的水平上。

公开(公告)号：US07239487B2

公开(公告)日：2007-07-03

申请号：US10601332

申请日：2003-06-20

申请人： Ubaldo Mastromatteo ,  Bruno Murari ,  Paolo Ferrari ,  Simone Sassolini

发明人： Ubaldo Mastromatteo ,  Bruno Murari ,  Paolo Ferrari ,  Simone Sassolini

IPC分类号： G11B5/56

CPC分类号： B81B3/0021 ,  H02N1/006

摘要： A micro-electro-mechanical device formed by a body of semiconductor material having a thickness and defining a mobile part and a fixed part. The mobile part is formed by a mobile platform, supporting arms extending from the mobile platform to the fixed part, and by mobile electrodes fixed to the mobile platform. The fixed part has fixed electrodes facing the mobile electrodes, a first biasing region fixed to the fixed electrodes, a second biasing region fixed to the supporting arms, and an insulation region of insulating material extending through the entire thickness of the body. The insulation region insulates electrically at least one between the first and the second biasing regions from the rest of the fixed part.

摘要翻译： 由具有厚度并限定可移动部分和固定部分的半导体材料体形成的微电子机械装置。 可移动部分由移动平台，从移动平台延伸到固定部分的支撑臂，以及固定到移动平台的移动电极形成。 固定部分具有面向移动电极的固定电极，固定到固定电极的第一偏置区域，固定到支撑臂的第二偏压区域以及延伸穿过主体整个厚度的绝缘材料的绝缘区域。 绝缘区域在第一和第二偏压区域之间至少一个与固定部件的其余部分绝缘。

公开(公告)号：US20050157372A1

公开(公告)日：2005-07-21

申请号：US11063483

申请日：2005-02-22

申请人： Bruno Murari ,  Ubaldo Mastromatteo ,  Paolo Ferrari

发明人： Bruno Murari ,  Ubaldo Mastromatteo ,  Paolo Ferrari

IPC分类号： G02B26/00 ,  G02B27/09 ,  H01L31/0232 ,  H01L31/0328

CPC分类号： G02B27/0994

摘要： A micromachined device made of semiconductor material is formed by: a semiconductor body; an intermediate layer set on top of the semiconductor body; and a substrate, set on top of the intermediate layer. A cavity extends in the intermediate layer and is delimited laterally by bottom fixed regions, at the top by the substrate, and at the bottom by the semiconductor body. The bottom fixed regions form fixed electrodes, which extend in the intermediate layer towards the inside of the cavity. An oscillating element is formed in the substrate above the cavity and is separated from top fixed regions through trenches, which extend throughout the thickness of the substrate. The oscillating element is formed by an oscillating platform set above the cavity, and by mobile electrodes, which extend towards the top fixed regions in a staggered way with respect to the fixed electrodes. The fixed electrodes and mobile electrodes are thus comb-fingered in plan view but formed on different levels.

摘要翻译： 由半导体材料制成的微机械加工装置由半导体本体形成， 设置在半导体本体顶部的中间层; 以及设置在中间层顶部的基板。 空腔在中间层中延伸并且由底部固定区域在顶部限定，在顶部由衬底限定，并且在底部由半导体本体限定。 底部固定区域形成固定电极，其在中间层中延伸到空腔的内部。 振荡元件形成在空腔上方的衬底中，并且通过沟槽与顶部固定区域分离，其延伸贯穿衬底的厚度。 振荡元件由设置在空腔上方的振荡平台和通过相对于固定电极以交错方式朝着顶部固定区域延伸的移动电极形成。 因此，固定电极和移动电极在平面图中梳理，但形成在不同的水平上。

公开(公告)号：US20070247761A1

公开(公告)日：2007-10-25

申请号：US11818659

申请日：2007-06-14

申请人： Ubaldo Mastromatteo ,  Bruno Murari ,  Paolo Ferrari ,  Simone Sassolini

发明人： Ubaldo Mastromatteo ,  Bruno Murari ,  Paolo Ferrari ,  Simone Sassolini

IPC分类号： G11B5/56

CPC分类号： B81B3/0021 ,  H02N1/006

摘要： A micro-electro-mechanical device formed by a body of semiconductor material having a thickness and defining a mobile part and a fixed part. The mobile part is formed by a mobile platform, supporting arms extending from the mobile platform to the fixed part, and by mobile electrodes fixed to the mobile platform. The fixed part has fixed electrodes facing the mobile electrodes, a first biasing region fixed to the fixed electrodes, a second biasing region fixed to the supporting arms, and an insulation region of insulating material extending through the entire thickness of the body. The insulation region insulates electrically at least one between the first and the second biasing regions from the rest of the fixed part.

摘要翻译： 由具有厚度并限定可移动部分和固定部分的半导体材料体形成的微电子机械装置。 可移动部分由移动平台，从移动平台延伸到固定部分的支撑臂，以及固定到移动平台的移动电极形成。 固定部分具有面向移动电极的固定电极，固定到固定电极的第一偏置区域，固定到支撑臂的第二偏压区域以及延伸穿过主体整个厚度的绝缘材料的绝缘区域。 绝缘区域在第一和第二偏压区域之间至少一个与固定部件的其余部分绝缘。

公开(公告)号：US6051854A

公开(公告)日：2000-04-18

申请号：US89816

申请日：1998-06-03

申请人： Benedetto Vigna ,  Paolo Ferrari ,  Ubaldo Mastromatteo

发明人： Benedetto Vigna ,  Paolo Ferrari ,  Ubaldo Mastromatteo

IPC分类号： G01N27/12 ,  H01L23/58

CPC分类号： G01N27/12

摘要： An integrated semiconductor device comprises, reciprocally superimposed, a thermally insulating region; a thermal conduction region of a high thermal conductivity material; a passivation oxide layer; and a gas sensitive element. The thermal conduction region defines a preferential path towards the gas sensitive element for the heat generated by the heater element, thereby the heat dispersed towards the substrate is negligible during the operation of the device.

摘要翻译： 集成半导体器件包括相互叠加的绝热区域; 高导热性材料的导热区域; 钝化氧化物层; 和气体敏感元件。 热传导区域限定朝向气体敏感元件的优先路径，用于由加热器元件产生的热量，从而在器件的操作期间向基板分散的热量可忽略。

公开(公告)号：US20050101054A1

公开(公告)日：2005-05-12

申请号：US10997250

申请日：2004-11-24

申请人： Ubaldo Mastromatteo ,  Paolo Ferrari

发明人： Ubaldo Mastromatteo ,  Paolo Ferrari

IPC分类号： H01L21/768 ,  H01L23/48 ,  H01L21/50

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05572 ,  H01L2224/13025 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

摘要： The process for manufacturing a through insulated interconnection is performed by forming, in a body of semiconductor material, a trench extending from the front (of the body for a thickness portion thereof; filling the trench with dielectric material; thinning the body starting from the rear until the trench, so as to form an insulated region surrounded by dielectric material; and forming a conductive region extending inside said insulated region between the front and the rear of the body and having a higher conductivity than the first body. The conductive region includes a metal region extending in an opening formed inside the insulated region or of a heavily doped semiconductor region, made prior to filling of the trench.

摘要翻译： 通过绝缘互连制造的方法是通过在半导体材料体中形成从前部（其主体的厚度部分）延伸的沟槽;用电介质材料填充沟槽;从后面开始使身体变薄 直到形成由电介质材料包围的绝缘区域，形成在主体前后的绝缘区域内延伸的导电性区域，并具有比第1主体高的导电性，导电区域包括： 金属区域在形成在绝缘区域内的开口中延伸，或者在填充沟槽之前制成的重掺杂半导体区域。

公开(公告)号：US06838362B2

公开(公告)日：2005-01-04

申请号：US10406633

申请日：2003-04-02

申请人： Ubaldo Mastromatteo ,  Paolo Ferrari

发明人： Ubaldo Mastromatteo ,  Paolo Ferrari

IPC分类号： H01L21/768 ,  H01L23/48 ,  H10L21/28

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05572 ,  H01L2224/13025 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

摘要： The process for manufacturing a through insulated interconnection is performed by forming, in a body of semiconductor material, a trench extending from the front (of the body for a thickness portion thereof; filling the trench with dielectric material; thinning the body starting from the rear until the trench, so as to form an insulated region surrounded by dielectric material; and forming a conductive region extending inside said insulated region between the front and the rear of the body and having a higher conductivity than the first body. The conductive region includes a metal region extending in an opening formed inside the insulated region or of a heavily doped semiconductor region, made prior to filling of the trench.

公开(公告)号：US07227213B2

公开(公告)日：2007-06-05

申请号：US10997250

申请日：2004-11-24

申请人： Ubaldo Mastromatteo ,  Paolo Ferrari

发明人： Ubaldo Mastromatteo ,  Paolo Ferrari

IPC分类号： H01L29/76 ,  H01L21/425

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05572 ,  H01L2224/13025 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

摘要： The process for manufacturing a through insulated interconnection is performed by forming, in a body of semiconductor material, a trench extending from the front (of the body for a thickness portion thereof; filling the trench with dielectric material; thinning the body starting from the rear until the trench, so as to form an insulated region surrounded by dielectric material; and forming a conductive region extending inside said insulated region between the front and the rear of the body and having a higher conductivity than the first body. The conductive region includes a metal region extending in an opening formed inside the insulated region or of a heavily doped semiconductor region, made prior to filling of the trench.

摘要翻译： 通过绝缘互连制造的方法是通过在半导体材料体中形成从前部（其主体的厚度部分）延伸的沟槽;用电介质材料填充沟槽;从后面开始使身体变薄 直到形成由电介质材料包围的绝缘区域，形成在主体前后的绝缘区域内延伸的导电性区域，并具有比第1主体高的导电性，导电区域包括： 金属区域在形成在绝缘区域内的开口中延伸，或者在填充沟槽之前制成的重掺杂半导体区域。