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公开(公告)号：US08634008B2
公开(公告)日：2014-01-21
申请号：US13463007
申请日：2012-05-03
IPC分类号： H04N5/335
CPC分类号： H04N5/3575 , H04N5/3745
摘要： Methods and apparatus are provided for performing multiple correlated double sampling (CDS) operations on an imaging pixel, and in some cases on an array of imaging pixels, during a single integration cycle of the pixel(s). The multiple CDS operations may produce multiple CDS values, which may be processed in combination to produce a resulting value substantially free of various types of noise. The CDS operations may be performed using a CDS circuit including a single-ended charge amplifier having an input capacitor. The charge amplifier may also include a variable capacitance providing a variable gain. The variable capacitance may be provided by a feedback capacitor.
摘要翻译： 提供了用于在像素的单个积分周期期间对成像像素执行多个相关双采样（CDS）操作，并且在一些情况下在成像像素阵列上执行的方法和装置。 多个CDS操作可以产生多个CDS值，其可以组合处理以产生基本上不含各种类型的噪声的结果值。 可以使用包括具有输入电容器的单端电荷放大器的CDS电路来执行CDS操作。 电荷放大器还可以包括提供可变增益的可变电容。 可变电容可由反馈电容器提供。
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公开(公告)号：US08072525B1
公开(公告)日：2011-12-06
申请号：US12141542
申请日：2008-06-18
IPC分类号： H04N5/335
CPC分类号： H04N5/3575 , H04N5/3745
摘要： Methods and apparatus are provided for performing multiple correlated double sampling (CDS) operations on an imaging pixel, and in some cases on an array of imaging pixels, during a single integration cycle of the pixel(s). The multiple CDS operations may produce multiple CDS values, which may be processed in combination to produce a resulting value substantially free of various types of noise. The CDS operations may be performed using a CDS circuit including a single-ended charge amplifier having an input capacitor. The charge amplifier may also include a variable capacitance providing a variable gain. The variable capacitance may be provided by a feedback capacitor.
摘要翻译： 提供了用于在像素的单个积分周期期间对成像像素执行多个相关双采样（CDS）操作，并且在一些情况下在成像像素阵列上执行的方法和装置。 多个CDS操作可以产生多个CDS值，其可以组合处理以产生基本上不含各种类型的噪声的结果值。 可以使用包括具有输入电容器的单端电荷放大器的CDS电路来执行CDS操作。 电荷放大器还可以包括提供可变增益的可变电容。 可变电容可由反馈电容器提供。
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公开(公告)号：US20120038807A1
公开(公告)日：2012-02-16
申请号：US13280455
申请日：2011-10-25
IPC分类号： H04N5/335
CPC分类号： H04N5/3575 , H04N5/3745
摘要： Methods and apparatus are provided for performing multiple correlated double sampling (CDS) operations on an imaging pixel, and in some cases on an array of imaging pixels, during a single integration cycle of the pixel(s). The multiple CDS operations may produce multiple CDS values, which may be processed in combination to produce a resulting value substantially free of various types of noise. The CDS operations may be performed using a CDS circuit including a single-ended charge amplifier having an input capacitor. The charge amplifier may also include a variable capacitance providing a variable gain. The variable capacitance may be provided by a feedback capacitor.
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公开(公告)号：US08063422B2
公开(公告)日：2011-11-22
申请号：US12109846
申请日：2008-04-25
IPC分类号： H01L31/062
CPC分类号： H01L27/14609 , H01L27/14612
摘要： MOS imaging pixels are described. The MOS imaging pixels may comprise bootstrapped source followers, having their bodies connected to their sources. The source followers of the MOS imaging pixels may be used to buffer a signal indicative of an amount of radiation incident on the pixel. MOS imagers are also described, which may comprise one or more MOS imaging pixels of the type described.
摘要翻译： 描述了MOS成像像素。 MOS成像像素可以包括引导源跟随器，其主体连接到它们的源。 可以使用MOS成像像素的源跟随器来缓冲表示入射在像素上的辐射量的信号。 还描述了MOS成像器，其可以包括所描述类型的一个或多个MOS成像像素。
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公开(公告)号：US20090267120A1
公开(公告)日：2009-10-29
申请号：US12109846
申请日：2008-04-25
IPC分类号： H01L31/113
CPC分类号： H01L27/14609 , H01L27/14612
摘要： MOS imaging pixels are described. The MOS imaging pixels may comprise bootstrapped source followers, having their bodies connected to their sources. The source followers of the MOS imaging pixels may be used to buffer a signal indicative of an amount of radiation incident on the pixel. MOS imagers are also described, which may comprise one or more MOS imaging pixels of the type described.
摘要翻译： 描述了MOS成像像素。 MOS成像像素可以包括引导源跟随器，其主体连接到它们的源。 可以使用MOS成像像素的源跟随器来缓冲表示入射在像素上的辐射量的信号。 还描述了MOS成像器，其可以包括所描述类型的一个或多个MOS成像像素。
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6.发明授权Methods of operating an imaging pixel to accumulate charge from a photocurrent 有权操作成像像素以从光电流累积电荷的方法公开(公告)号：US08586907B2
公开(公告)日：2013-11-19
申请号：US13212271
申请日：2011-08-18
申请人： Bryan D. Ackland
发明人： Bryan D. Ackland
CPC分类号： H04N5/3742 , H04N5/3559 , H04N5/3745
摘要： An improved CMOS pixel with a combination of analog and digital readouts to provide a large pixel dynamic range without compromising low-light performance using a comparator to test the value of an accumulated charge at a series of exponentially increasing exposure times. The test is used to stop the integration of photocurrent once the accumulated analog voltage has reached a predetermined threshold. A one-bit output value of the test is read out of the pixel (digitally) at each of the exponentially increasing exposure periods. At the end of the integration period, the analog value stored on the integration capacitor is read out using conventional CMOS active pixel readout circuits.
摘要翻译： 具有模拟和数字读数组合的改进的CMOS像素，以提供大的像素动态范围，而不会在使用比较器的低亮度性能的情况下以一系列指数增长的曝光时间来测试累积电荷的值。 一旦累积的模拟电压达到预定阈值，该测试用于停止光电流的积分。 在每个指数增长的曝光周期中，从像素（数字地）读出测试的一位输出值。 在积分周期结束时，使用常规CMOS有源像素读出电路读出存储在积分电容器上的模拟值。
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7.发明授权Methods and apparatus for increasing metal density in an integrated circuit while also reducing parasitic capacitance 失效增加集成电路中金属密度的方法和装置，同时也降低寄生电容
公开(公告)号：US6097195A
公开(公告)日：2000-08-01
申请号：US88852
申请日：1998-06-02
IPC分类号： H01L23/522 , G01R31/26
CPC分类号： H01L23/5225 , H01L2924/0002
摘要： A shield region of metallization is formed in a first metallization layer of an integrated circuit so as to increase the metal density of the first metallization layer to at least a minimum density required for proper fabrication. The shield region is coupled via an amplifier or other suitable coupling mechanism to at least a portion of another metallization layer overlying or underlying the first metallization layer in the integrated circuit, such that the shield region acts to reduce parasitic capacitance associated with a circuit node in the other metallization layer. In an illustrative fingerprint sensor cell implementation, the shield region is in the form of a shield plate underlying a sensor plate in the sensor cell and serves to increase the metal density of a lower-level metallization layer in the cell. The sensor plate is coupled to the shield plate via a unity-gain amplifier, so as to reduce the parasitic capacitance seen by the sensor plate, thereby improving the ability of the sensor cell to detect fingerprint characteristics. The invention can provide similar advantages in numerous other integrated circuit applications.
摘要翻译： 在集成电路的第一金属化层中形成金属化的屏蔽区域，以便将第一金属化层的金属密度增加到适当制造所需的至少最小密度。 屏蔽区域经由放大器或其它合适的耦合机构耦合到叠加在集成电路中的第一金属化层上或下方的另一金属化层的至少一部分，使得屏蔽区域用于减小与电路节点相关的寄生电容 另一个金属化层。 在说明性指纹传感器单元实现中，屏蔽区域处于传感器单元内的传感器板下方的屏蔽板的形式，并用于增加电池中较低级金属化层的金属密度。 传感器板通过单位增益放大器耦合到屏蔽板，以便减小传感器板所看到的寄生电容，从而提高传感器单元检测指纹特性的能力。 本发明可以在许多其他集成电路应用中提供类似的优点。
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公开(公告)号：US5576763A
公开(公告)日：1996-11-19
申请号：US344785
申请日：1994-11-22
IPC分类号： H01L27/092 , H01L21/8238 , H01L27/146 , H01L31/113 , H04N5/335
CPC分类号： H01L27/14609 , H01L27/14643 , H01L31/1136
摘要： The single-polysilicon active pixel comprises a photo site located on a substrate for generating and storing charge carriers, the charge carriers being generated from photonic energy incident upon the photo site and semiconductor substrate, a photo gate, a transfer transistor and output and reset electronics. The gate of the transfer transistor and the photo gate are defined in a single layer of polysilicon disposed on the semiconductor substrate. The source of transfer transistor is a doped region of substrate, referred to as a coupling diffusion, which provides the electrical coupling between the photo gate and the transfer transistor. The coupling diffusion allows for the transfer of a signal stored in a photo site under the photo gate to the output electronics for processing. The single-polysilicon active pixel may be operated by biasing the transfer transistor to the low operating voltage of the pixel, for example, 0 volts. By virtue of the structure of the single-polysilicon active pixel, this mode of operation results in the same timing as if the transfer transistor were clocked, but neither a clock nor the associated driving circuitry are required. However, there is little no tendency for image lag as occurs in double polysilicon active pixels when they are operated in a manner which avoids clocking the transfer gate.
摘要翻译： 单个多晶硅有源像素包括位于衬底上的用于产生和存储电荷载流子的光电子位点，电荷载体由入射到光电位置和半导体衬底上的光能产生，光栅，传输晶体管以及输出和复位电子 。 传输晶体管的栅极和光栅限定在设置在半导体衬底上的单层多晶硅中。 传输晶体管的源是衬底的掺杂区域，被称为耦合扩散，其提供光栅和转移晶体管之间的电耦合。 耦合扩散允许将存储在光栅下的照片位置的信号传送到输出电子器件用于处理。 可以通过将传输晶体管偏置到像素的低工作电压（例如0伏）来操作单多晶硅有源像素。 由于单个多晶硅有源像素的结构，这种操作模式产生与传输晶体管时钟相同的定时，但是不需要时钟和相关的驱动电路。 然而，当双重多晶硅有源像素以避免传输门时钟的方式操作时，几乎没有发生图像滞后的趋势。
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公开(公告)号：US08686365B2
公开(公告)日：2014-04-01
申请号：US12510109
申请日：2009-07-27
申请人： Conor S. Rafferty , Anders Ingvar Aberg , Tirunelveli Subramaniam Sriram , Bryan D. Ackland , Clifford A. King
发明人： Conor S. Rafferty , Anders Ingvar Aberg , Tirunelveli Subramaniam Sriram , Bryan D. Ackland , Clifford A. King
IPC分类号： G01J5/02 , H01L31/0232
CPC分类号： H01L27/14627 , G01J3/02 , G01J3/0294 , G01J3/51 , G01J3/513 , H01L27/14621 , H01L27/14629 , H01L27/14632 , H01L27/14636 , H01L27/14647 , H01L27/14685
摘要： Optical imaging structures and methods are disclosed. One structure may be implemented as an imaging pixel having multiple photodetectors. The photodetectors may detect different wavelengths of incident radiation, and may be operated simultaneously or at separate times. An imager may include an imaging array of pixels of the type described. Methods of operating such structures are also described.
摘要翻译： 公开了光学成像结构和方法。 一个结构可以被实现为具有多个光电检测器的成像像素。 光电检测器可以检测入射辐射的不同波长，并且可以同时或在不同的时间运行。 成像器可以包括所述类型的像素的成像阵列。 还描述了操作这种结构的方法。
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公开(公告)号：US20100019154A1
公开(公告)日：2010-01-28
申请号：US12510109
申请日：2009-07-27
申请人： Conor S. Rafferty , Anders Ingvar Aberg , Tirunelveli Subramaniam Sriram , Bryan D. Ackland , Clifford A. King
发明人： Conor S. Rafferty , Anders Ingvar Aberg , Tirunelveli Subramaniam Sriram , Bryan D. Ackland , Clifford A. King
IPC分类号： G01J5/02 , H01L31/0232 , H01L31/028
CPC分类号： H01L27/14627 , G01J3/02 , G01J3/0294 , G01J3/51 , G01J3/513 , H01L27/14621 , H01L27/14629 , H01L27/14632 , H01L27/14636 , H01L27/14647 , H01L27/14685
摘要： Optical imaging structures and methods are disclosed. One structure may be implemented as an imaging pixel having multiple photodetectors. The photodetectors may detect different wavelengths of incident radiation, and may be operated simultaneously or at separate times. An imager may include an imaging array of pixels of the type described. Methods of operating such structures are also described.
摘要翻译： 公开了光学成像结构和方法。 一个结构可以被实现为具有多个光电检测器的成像像素。 光电检测器可以检测入射辐射的不同波长，并且可以同时或在不同的时间运行。 成像器可以包括所述类型的像素的成像阵列。 还描述了操作这种结构的方法。
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