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公开(公告)号：US20090188425A1
公开(公告)日：2009-07-30
申请号：US12420857
申请日：2009-04-09
CPC分类号： C30B15/32 , Y10S117/911 , Y10T117/10 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： A pulling apparatus and a method with which especially heavy crystals (5) can be pulled using the Czochralski method utilizing the pulling apparatus. For this purpose the neck (4) of the crystal (5) has an enlargement (10) beneath which extends the support device. This device includes latches (7), which are moved from a resting position into an operating position in which the latches (7) extend beneath the enlargement (10). Each latch (7) is supported on the base body such that it is swivellable about a pivot axis (8) and can assume two stable positions, namely the resting position and the operating position. Each of these positions is defined by a stop on the base body. When the latch rests on the one stop, its center of gravity, viewed from the neck (4), is located on the other side of the pivot axis (8). When the latch rests on the other stop, the center of gravity is located on this side of the pivot axis (8). The actuation of the latches (7) takes place with actuation means disposed stationarily in the apparatus.
摘要翻译： 拉伸装置和使用拉伸装置的切克劳斯基法可以拉伸特别重的晶体（5）的方法。 为此，晶体（5）的颈部（4）具有放大（10），在该放大部分（10）延伸支撑装置。 该装置包括闩锁（7），其从静止位置移动到闩锁（7）在放大部分（10）下方延伸的操作位置。 每个闩锁（7）被支撑在基体上，使得其可绕枢转轴线（8）旋转并且可以呈现两个稳定的位置，即静止位置和操作位置。 这些位置中的每一个由基体上的止挡限定。 当闩锁位于一个停止点上时，从颈部（4）观察的其重心位于枢转轴线（8）的另一侧。 当闩锁位于另一个挡块上时，重心位于枢转轴线（8）的这一侧。 闩锁（7）的致动通过固定地设置在该装置中的致动装置进行。
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公开(公告)号：US20080022922A1
公开(公告)日：2008-01-31
申请号：US11881023
申请日：2007-07-25
IPC分类号： C30B15/30
CPC分类号： C30B15/32 , Y10S117/911 , Y10T117/10 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： A pulling apparatus and a method with which especially heavy crystals (5) can be pulled using the Czochralski method utilizing the pulling apparatus. For this purpose the neck (4) of the crystal (5) has an enlargement (10) beneath which extends the support device. This device includes latches (7), which are moved from a resting position into an operating position in which the latches (7) extend beneath the enlargement (10). Each latch (7) is supported on the base body such that it is swivellable about a pivot axis (8) and can assume two stable positions, namely the resting position and the operating position. Each of these positions is defined by a stop on the base body. When the latch rests on the one stop, its center of gravity, viewed from the neck (4), is located on the other side of the pivot axis (8). When the latch rests on the other stop, the center of gravity is located on this side of the pivot axis (8). The actuation of the latches (7) takes place with actuation means disposed stationarily in the apparatus.
摘要翻译： 拉伸装置和使用拉伸装置的切克劳斯基法可以拉伸特别重的晶体（5）的方法。 为此，晶体（5）的颈部（4）具有放大（10），在该放大部分（10）延伸支撑装置。 该装置包括闩锁（7），其从静止位置移动到闩锁（7）在放大部分（10）下方延伸的操作位置。 每个闩锁（7）被支撑在基体上，使得其可绕枢转轴线（8）旋转并且可以呈现两个稳定的位置，即静止位置和操作位置。 这些位置中的每一个由基体上的止挡限定。 当闩锁位于一个停止点上时，从颈部（4）观察的其重心位于枢转轴线（8）的另一侧。 当闩锁位于另一个挡块上时，重心位于枢转轴线（8）的这一侧。 闩锁（7）的致动通过固定地设置在该装置中的致动装置进行。
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公开(公告)号：US07828897B2
公开(公告)日：2010-11-09
申请号：US11881023
申请日：2007-07-25
IPC分类号： C30B15/02
CPC分类号： C30B15/32 , Y10S117/911 , Y10T117/10 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： A pulling apparatus and a method with which especially heavy crystals (5) can be pulled using the Czochralski method utilizing the pulling apparatus. For this purpose the neck (4) of the crystal (5) has an enlargement (10) beneath which extends the support device. This device includes latches (7), which are moved from a resting position into an operating position in which the latches (7) extend beneath the enlargement (10). Each latch (7) is supported on the base body such that it is swivellable about a pivot axis (8) and can assume two stable positions, namely the resting position and the operating position. Each of these positions is defined by a stop on the base body. When the latch rests on the one stop, its center of gravity, viewed from the neck (4), is located on the other side of the pivot axis (8). When the latch rests on the other stop, the center of gravity is located on this side of the pivot axis (8). The actuation of the latches (7) takes place with actuation means disposed stationarily in the apparatus.
摘要翻译： 拉伸装置和使用拉伸装置的切克劳斯基法可以拉伸特别重的晶体（5）的方法。 为此，晶体（5）的颈部（4）具有放大（10），在该放大部分（10）延伸支撑装置。 该装置包括闩锁（7），其从静止位置移动到闩锁（7）在放大部分（10）下方延伸的操作位置。 每个闩锁（7）被支撑在基体上，使得其可绕枢转轴线（8）旋转并且可以呈现两个稳定的位置，即静止位置和操作位置。 这些位置中的每一个由基体上的止挡限定。 当闩锁位于一个停止点上时，从颈部（4）观察的其重心位于枢转轴线（8）的另一侧。 当闩锁位于另一个挡块上时，重心位于枢转轴线（8）的这一侧。 闩锁（7）的致动通过固定地设置在该装置中的致动装置进行。
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公开(公告)号：US08691009B2
公开(公告)日：2014-04-08
申请号：US12420857
申请日：2009-04-09
IPC分类号： C30B15/32
CPC分类号： C30B15/32 , Y10S117/911 , Y10T117/10 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： A pulling apparatus and a method with which especially heavy crystals (5) can be pulled using the Czochralski method utilizing the pulling apparatus. For this purpose the neck (4) of the crystal (5) has an enlargement (10) beneath which extends the support device. This device includes latches (7), which are moved from a resting position into an operating position in which the latches (7) extend beneath the enlargement (10). Each latch (7) is supported on the base body such that it is swivellable about a pivot axis (8) and can assume two stable positions, namely the resting position and the operating position. Each of these positions is defined by a stop on the base body. When the latch rests on the one stop, its center of gravity, viewed from the neck (4), is located on the other side of the pivot axis (8). When the latch rests on the other stop, the center of gravity is located on this side of the pivot axis (8). The actuation of the latches (7) takes place with actuation means disposed stationarily in the apparatus.
摘要翻译： 拉伸装置和使用拉伸装置的切克劳斯基法可以拉伸特别重的晶体（5）的方法。 为此，晶体（5）的颈部（4）具有放大（10），在该放大部分（10）延伸支撑装置。 该装置包括闩锁（7），其从静止位置移动到闩锁（7）在放大部分（10）下方延伸的操作位置。 每个闩锁（7）被支撑在基体上，使得其可绕枢转轴线（8）旋转并且可以呈现两个稳定的位置，即静止位置和操作位置。 这些位置中的每一个由基体上的止挡限定。 当闩锁位于一个停止点上时，从颈部（4）观察的其重心位于枢转轴线（8）的另一侧。 当闩锁位于另一个挡块上时，重心位于枢转轴线（8）的这一侧。 闩锁（7）的致动通过固定地设置在该装置中的致动装置进行。
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公开(公告)号：US6132507A
公开(公告)日：2000-10-17
申请号：US206061
申请日：1998-12-04
申请人： Wilfried von Ammon , Erich Tomzig , Janis Virbulis
发明人： Wilfried von Ammon , Erich Tomzig , Janis Virbulis
IPC分类号： C30B15/14 , H01L21/208 , C30B35/00
CPC分类号： C30B15/14 , Y10S117/90 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A process and device for the production of a single crystal of semiconductor material is by pulling the single crystal from a melt, which is contained in a crucible and is heated by a side heater surrounding the crucible. The melt is additionally heated, in an annular region around the single crystal, by an annular heating device which surrounds the single crystal and is positioned above the melt.
摘要翻译： 用于制造半导体材料的单晶的工艺和装置是通过从包含在坩埚中的熔体中拉出单晶并且被围绕坩埚的侧加热器加热。 熔体在单晶环绕的环形区域中通过围绕单晶并位于熔体上方的环形加热装置另外加热。
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公开(公告)号：US06238477B1
公开(公告)日：2001-05-29
申请号：US09520290
申请日：2000-03-07
申请人： Wilfried von Ammon , Erich Tomzig , Janis Virbulis
发明人： Wilfried von Ammon , Erich Tomzig , Janis Virbulis
IPC分类号： C30B1520
CPC分类号： C30B15/14 , Y10S117/90 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A process and device for the production of a single crystal of semiconductor material is by pulling the single crystal from a melt, which is contained in a crucible and is heated by a side heater surrounding the crucible. The melt is additionally heated, in an annular region around the single crystal, by an annular heating device which surrounds the single crystal and is positioned above the melt.
摘要翻译： 用于制造半导体材料的单晶的工艺和装置是通过从包含在坩埚中的熔体中拉出单晶并且被围绕坩埚的侧加热器加热。 熔体在单晶环绕的环形区域中通过围绕单晶并位于熔体上方的环形加热装置另外加热。
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公开(公告)号：US06001170A
公开(公告)日：1999-12-14
申请号：US695315
申请日：1996-08-09
CPC分类号： C30B15/305 , Y10S117/917 , Y10T117/1032
摘要： A process for the growth of a single crystal from semiconductor material by the Czochralski method, in which the melt is subjected to the influence of a magnetic field during the crystal growth and the magnetic field is generated by superposing a static magnetic field and an alternating magnetic field. An apparatus for carrying out the process, has a magnetic means which comprises two coils which are arranged around a crucible, one coil generating a static magnetic field and the other coil generating an alternating magnetic field.
摘要翻译： 通过切克劳斯基法从半导体材料生长单晶的方法，其中熔体在晶体生长期间受到磁场的影响，并且磁场通过叠加静态磁场和交变磁场而产生 领域。 用于执行该过程的装置具有磁性装置，其包括布置在坩埚周围的两个线圈，产生静磁场的一个线圈和产生交变磁场的另一个线圈。
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公开(公告)号：US07771530B2
公开(公告)日：2010-08-10
申请号：US10053446
申请日：2002-01-17
IPC分类号： C30B15/00
CPC分类号： C30B29/06 , C30B15/305
摘要： A process for producing a silicon single crystal is by pulling the single crystal from a silicon melt which is contained in a crucible with a diameter of at least 450 mm, above which a heat shield is arranged. The single crystal being pulled has a diameter of at least 200 mm. The silicon melt is exposed to the influence of a traveling magnetic field which exerts a substantially vertically oriented force on the melt in the region of the crucible wall. There is also an apparatus which is suitable for carrying out the process.
摘要翻译： 制造硅单晶的方法是通过从容纳在直径至少为450mm的坩埚中的硅熔体中拉出单晶，在该坩埚上方布置有隔热罩。 被拉伸的单晶直径至少为200mm。 硅熔体暴露于在坩埚壁的区域中对熔体施加基本垂直取向的力的行进磁场的影响。 还有一种适用于执行该过程的装置。
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公开(公告)号：US06171395B2
公开(公告)日：2001-01-09
申请号：US09203266
申请日：1998-12-01
申请人： Wilfried von Ammon , Erich Tomzig , Paul Fuchs
发明人： Wilfried von Ammon , Erich Tomzig , Paul Fuchs
IPC分类号： C30B2814
CPC分类号： C30B15/14 , C30B15/00 , C30B15/02 , Y10T117/10 , Y10T117/1016 , Y10T117/1068
摘要： The invention relates to a process for melting semiconductor material in a crucible which is located in a container, and is enclosed by a fixed heating device. The invention also relates to a heating device which is suitable for carrying out the process. The process is one wherein a heater of a displaceable heating device is lowered from a lock chamber above the container through an open shut-off valve into the container in the direction of the semiconductor material, and the semiconductor material is melted using the fixed heating device and the lowered heater. The heater is then raised back out of the container into the lock chamber after the semiconductor material has been melted. A door is provided in the lock chamber to allow the displaceable heater to be removed after the semiconductor material has been melted.
摘要翻译： 本发明涉及一种在坩埚中熔化半导体材料的方法，该方法位于容器中，由固定的加热装置封闭。 本发明还涉及一种适用于进行该加工的加热装置。 该过程是其中可移动加热装置的加热器从容器上方的锁定室通过打开的截止阀沿着半导体材料的方向降入容器中，并且半导体材料使用固定加热装置 和下降的加热器。 然后在半导体材料熔化之后，将加热器从容器中提回到锁定室中。 在锁定室中设置门，以允许可移动的加热器在半导体材料熔化之后被去除。
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10.发明授权Process for producing a silicon single crystal, and heater for carrying out the process 失效硅单晶的制造方法，以及用于进行该工艺的加热器
公开(公告)号：US6117230A
公开(公告)日：2000-09-12
申请号：US977584
申请日：1997-11-25
申请人： Wilfried Von Ammon , Erich Tomzig , Paul Fuchs , Yuri Gelfgat
发明人： Wilfried Von Ammon , Erich Tomzig , Paul Fuchs , Yuri Gelfgat
CPC分类号： C30B29/06 , C30B15/14 , H05B6/02 , H05B6/24 , Y10T117/1068
摘要： A process for producing a silicon single crystal by the Czochralski method, utilizes a heater which is intended for heating a silicon-filled crucible and is arranged below the crucible. The process has energy delivered to the melt at least some of the time inductively using a coiled heater arranged under the crucible. The heater is in the form of a wound coil.
摘要翻译： 通过切克劳斯基法生产硅单晶的方法利用了用于加热填充硅的坩埚并设置在坩埚下方的加热器。 该方法在至少一些时间内使用布置在坩埚下方的盘绕加热器感应地将能量传送到熔体。 加热器是卷绕线圈的形式。
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