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公开(公告)号：US20080022922A1
公开(公告)日：2008-01-31
申请号：US11881023
申请日：2007-07-25
IPC分类号： C30B15/30
CPC分类号： C30B15/32 , Y10S117/911 , Y10T117/10 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： A pulling apparatus and a method with which especially heavy crystals (5) can be pulled using the Czochralski method utilizing the pulling apparatus. For this purpose the neck (4) of the crystal (5) has an enlargement (10) beneath which extends the support device. This device includes latches (7), which are moved from a resting position into an operating position in which the latches (7) extend beneath the enlargement (10). Each latch (7) is supported on the base body such that it is swivellable about a pivot axis (8) and can assume two stable positions, namely the resting position and the operating position. Each of these positions is defined by a stop on the base body. When the latch rests on the one stop, its center of gravity, viewed from the neck (4), is located on the other side of the pivot axis (8). When the latch rests on the other stop, the center of gravity is located on this side of the pivot axis (8). The actuation of the latches (7) takes place with actuation means disposed stationarily in the apparatus.
摘要翻译： 拉伸装置和使用拉伸装置的切克劳斯基法可以拉伸特别重的晶体（5）的方法。 为此，晶体（5）的颈部（4）具有放大（10），在该放大部分（10）延伸支撑装置。 该装置包括闩锁（7），其从静止位置移动到闩锁（7）在放大部分（10）下方延伸的操作位置。 每个闩锁（7）被支撑在基体上，使得其可绕枢转轴线（8）旋转并且可以呈现两个稳定的位置，即静止位置和操作位置。 这些位置中的每一个由基体上的止挡限定。 当闩锁位于一个停止点上时，从颈部（4）观察的其重心位于枢转轴线（8）的另一侧。 当闩锁位于另一个挡块上时，重心位于枢转轴线（8）的这一侧。 闩锁（7）的致动通过固定地设置在该装置中的致动装置进行。
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公开(公告)号：US20090188425A1
公开(公告)日：2009-07-30
申请号：US12420857
申请日：2009-04-09
CPC分类号： C30B15/32 , Y10S117/911 , Y10T117/10 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： A pulling apparatus and a method with which especially heavy crystals (5) can be pulled using the Czochralski method utilizing the pulling apparatus. For this purpose the neck (4) of the crystal (5) has an enlargement (10) beneath which extends the support device. This device includes latches (7), which are moved from a resting position into an operating position in which the latches (7) extend beneath the enlargement (10). Each latch (7) is supported on the base body such that it is swivellable about a pivot axis (8) and can assume two stable positions, namely the resting position and the operating position. Each of these positions is defined by a stop on the base body. When the latch rests on the one stop, its center of gravity, viewed from the neck (4), is located on the other side of the pivot axis (8). When the latch rests on the other stop, the center of gravity is located on this side of the pivot axis (8). The actuation of the latches (7) takes place with actuation means disposed stationarily in the apparatus.
摘要翻译： 拉伸装置和使用拉伸装置的切克劳斯基法可以拉伸特别重的晶体（5）的方法。 为此，晶体（5）的颈部（4）具有放大（10），在该放大部分（10）延伸支撑装置。 该装置包括闩锁（7），其从静止位置移动到闩锁（7）在放大部分（10）下方延伸的操作位置。 每个闩锁（7）被支撑在基体上，使得其可绕枢转轴线（8）旋转并且可以呈现两个稳定的位置，即静止位置和操作位置。 这些位置中的每一个由基体上的止挡限定。 当闩锁位于一个停止点上时，从颈部（4）观察的其重心位于枢转轴线（8）的另一侧。 当闩锁位于另一个挡块上时，重心位于枢转轴线（8）的这一侧。 闩锁（7）的致动通过固定地设置在该装置中的致动装置进行。
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公开(公告)号：US07828897B2
公开(公告)日：2010-11-09
申请号：US11881023
申请日：2007-07-25
IPC分类号： C30B15/02
CPC分类号： C30B15/32 , Y10S117/911 , Y10T117/10 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： A pulling apparatus and a method with which especially heavy crystals (5) can be pulled using the Czochralski method utilizing the pulling apparatus. For this purpose the neck (4) of the crystal (5) has an enlargement (10) beneath which extends the support device. This device includes latches (7), which are moved from a resting position into an operating position in which the latches (7) extend beneath the enlargement (10). Each latch (7) is supported on the base body such that it is swivellable about a pivot axis (8) and can assume two stable positions, namely the resting position and the operating position. Each of these positions is defined by a stop on the base body. When the latch rests on the one stop, its center of gravity, viewed from the neck (4), is located on the other side of the pivot axis (8). When the latch rests on the other stop, the center of gravity is located on this side of the pivot axis (8). The actuation of the latches (7) takes place with actuation means disposed stationarily in the apparatus.
摘要翻译： 拉伸装置和使用拉伸装置的切克劳斯基法可以拉伸特别重的晶体（5）的方法。 为此，晶体（5）的颈部（4）具有放大（10），在该放大部分（10）延伸支撑装置。 该装置包括闩锁（7），其从静止位置移动到闩锁（7）在放大部分（10）下方延伸的操作位置。 每个闩锁（7）被支撑在基体上，使得其可绕枢转轴线（8）旋转并且可以呈现两个稳定的位置，即静止位置和操作位置。 这些位置中的每一个由基体上的止挡限定。 当闩锁位于一个停止点上时，从颈部（4）观察的其重心位于枢转轴线（8）的另一侧。 当闩锁位于另一个挡块上时，重心位于枢转轴线（8）的这一侧。 闩锁（7）的致动通过固定地设置在该装置中的致动装置进行。
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公开(公告)号：US08691009B2
公开(公告)日：2014-04-08
申请号：US12420857
申请日：2009-04-09
IPC分类号： C30B15/32
CPC分类号： C30B15/32 , Y10S117/911 , Y10T117/10 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： A pulling apparatus and a method with which especially heavy crystals (5) can be pulled using the Czochralski method utilizing the pulling apparatus. For this purpose the neck (4) of the crystal (5) has an enlargement (10) beneath which extends the support device. This device includes latches (7), which are moved from a resting position into an operating position in which the latches (7) extend beneath the enlargement (10). Each latch (7) is supported on the base body such that it is swivellable about a pivot axis (8) and can assume two stable positions, namely the resting position and the operating position. Each of these positions is defined by a stop on the base body. When the latch rests on the one stop, its center of gravity, viewed from the neck (4), is located on the other side of the pivot axis (8). When the latch rests on the other stop, the center of gravity is located on this side of the pivot axis (8). The actuation of the latches (7) takes place with actuation means disposed stationarily in the apparatus.
摘要翻译： 拉伸装置和使用拉伸装置的切克劳斯基法可以拉伸特别重的晶体（5）的方法。 为此，晶体（5）的颈部（4）具有放大（10），在该放大部分（10）延伸支撑装置。 该装置包括闩锁（7），其从静止位置移动到闩锁（7）在放大部分（10）下方延伸的操作位置。 每个闩锁（7）被支撑在基体上，使得其可绕枢转轴线（8）旋转并且可以呈现两个稳定的位置，即静止位置和操作位置。 这些位置中的每一个由基体上的止挡限定。 当闩锁位于一个停止点上时，从颈部（4）观察的其重心位于枢转轴线（8）的另一侧。 当闩锁位于另一个挡块上时，重心位于枢转轴线（8）的这一侧。 闩锁（7）的致动通过固定地设置在该装置中的致动装置进行。
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5.发明申请公开(公告)号：US20130014695A1
公开(公告)日：2013-01-17
申请号：US13545097
申请日：2012-07-10
申请人： Dieter Knerer , Werner Schachinger
发明人： Dieter Knerer , Werner Schachinger
IPC分类号： C30B15/14
CPC分类号： C30B15/14 , C30B30/04 , C30B35/00 , H05B3/40 , Y10T117/1068
摘要： A ring-shaped resistance heater for supplying heat to a growing single crystal, comprising:an upper and a lower ring, which are electrically conductively connected by means of a loop adjacent to a ring gap of the lower ring, such that the flow direction of electric current which is conducted through the rings is opposite in the rings;connecting elements which hold the upper and lower rings together at a distance; andcurrent leads for conducting electric current through the upper and lower rings.
摘要翻译： 一种环形电阻加热器，用于向生长的单晶提供热量，包括：上环和下环，其通过与所述下环的环间隙相邻的环导电连接，使得流动方向 环中传导的电流在环中相反; 将上下环连接在一起的连接元件; 以及用于通过上下环导通电流的电流引线。
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6.发明申请公开(公告)号：US20080026232A1
公开(公告)日：2008-01-31
申请号：US11828392
申请日：2007-07-26
申请人： Dieter Knerer , Andreas Huber , Ulrich Lambert , Friedrich Passek
发明人： Dieter Knerer , Andreas Huber , Ulrich Lambert , Friedrich Passek
IPC分类号： B32B15/04 , H01L21/268
CPC分类号： H01L21/268 , H01L29/32 , Y10T428/24802 , Y10T428/31678
摘要： Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cm2 to 0.1/cm2 and occupy overall an areal proportion of 10% to 100% of the planar area of the semiconductor wafer, wherein the remaining regions of the semiconductor wafer have a significantly higher defect density than the defect-reduced regions. The wafers may be produced by a method for annealing GOI relevant defects in the wafer, by irradiating defined regions of a side of the semiconductor wafer by laser wherein each location is irradiated with a power density of 1 GW/m2 to 10 GW/m2 for at least 25 ms, wherein the laser emits radiation of a wavelength above the absorption edge of the wafer semiconductor material and wherein the temperature of the wafer rises by less than 20 K as a result of irradiation.
摘要翻译： 单晶半导体晶片具有缺陷减少区域，缺陷减少区域具有在0 / cm 2至0.1 / cm 2范围内的GOI相关缺陷密度，以及 占据半导体晶片的平面面积的10％至100％的总面积比，其中半导体晶片的其余区域具有比缺陷减少区域明显更高的缺陷密度。 可以通过用于通过用激光照射半导体晶片的侧面的限定区域来对晶片中的GOI相关缺陷进行退火的方法来生产晶片，其中每个位置以1GW / m 2的功率密度照射， SUP>至10GW / m 2至少25ms，其中激光器发射波长在晶片半导体材料的吸收边缘上方的波长，并且其中晶片的温度升高小于20 K作为照射的结果。
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7.发明申请Supporting apparatus for supporting a growing single crystal of semiconductor material, and process for producing a single crystal 失效用于支撑日益增长的半导体材料单晶的支撑装置，以及用于制造单晶的工艺公开(公告)号：US20070044711A1
公开(公告)日：2007-03-01
申请号：US11509408
申请日：2006-08-24
申请人： Dieter Knerer
发明人： Dieter Knerer
CPC分类号： C30B15/30 , C30B29/06 , Y10S117/902 , Y10S117/911 , Y10T117/10 , Y10T117/1024 , Y10T117/1032 , Y10T117/1072
摘要： An apparatus for supporting a single crystal during Czochralski crystal pulling below a thickened crystal neck has lower bearing surface(s) with a central opening inscribable with a horizontal circle of diameter D1, centered on a vertical axis, the bearing surface(s) connected by connecting element(s) to minimally one securing element for securing to a crystal pulling lifting device, the connecting elements arranged to provide a clear-space in the region above the bearing surface(s) in which a circle of diameter D2 centered on the vertical axis (D2>D1) is inscribable over a length of the vertical axis. The unitary apparatus is useful for crystal ingot growth by immersion into the semiconductor melt prior to growth of a Dash neck and a thickening of the Dash neck. The apparatus is then raised to support the crystal by bearing against the bottom of the thickening.
摘要翻译： 一种用于在切克拉斯基晶体拉伸在增厚的晶体颈部下方支撑单晶的装置具有较低的支承表面，其中心开口可以垂直轴线居中直径为D 1的水平圆， 所述支承表面通过连接元件连接到最小的一个固定元件，用于固定到拉晶提升装置，所述连接元件布置成在所述支承表面上方的区域中提供透明空间， 以垂直轴为中心的直径D 2的圆（D 2 D 1 1）可以在垂直轴的长度上刻录。 该单一设备可用于通过浸入半导体熔体中的晶锭生长，并在破裂颈部生长之前和Dash颈部增厚。 然后将装置升起以通过支承增厚件的底部来支撑晶体。
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8.发明申请Monocrystalline Semiconductor Wafer Comprising Defect-Reduced Regions and Method For Producing It 有权包含缺陷减少区域的单晶半导体晶片及其制造方法公开(公告)号：US20110318546A1
公开(公告)日：2011-12-29
申请号：US13226772
申请日：2011-09-07
申请人： Dieter Knerer , Andreas Huber , Ulrich Lambert , Friedrich Passek
发明人： Dieter Knerer , Andreas Huber , Ulrich Lambert , Friedrich Passek
IPC分类号： B32B3/00
CPC分类号： H01L21/268 , H01L29/32 , Y10T428/24802 , Y10T428/31678
摘要： Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cm2 to 0.1/cm2 and occupy overall an areal proportion of 10% to 100% of the planar area of the semiconductor wafer, wherein the remaining regions of the semiconductor wafer have a significantly higher defect density than the defect-reduced regions. The wafers may be produced by a method for annealing GOI relevant defects in the wafer, by irradiating defined regions of a side of the semiconductor wafer by laser wherein each location is irradiated with a power density of 1 GW/m2 to 10 GW/m2 for at least 25 ms, wherein the laser emits radiation of a wavelength above the absorption edge of the wafer semiconductor material and wherein the temperature of the wafer rises by less than 20 K as a result of irradiation.
摘要翻译： 单晶半导体晶片具有缺陷减少区域，缺陷区域具有在0 / cm 2至0.1 / cm 2范围内的GOI相关缺陷的密度，并且占整个面积比例为平面面积的10％至100％ 半导体晶片，其中半导体晶片的剩余区域具有比缺陷减少区域显着更高的缺陷密度。 可以通过用于通过用激光照射半导体晶片的侧面的限定区域来对晶片中的GOI相关缺陷进行退火的方法来制造晶片，其中以1GW / m 2至10GW / m 2的功率密度照射每个位置， 至少25ms，其中所述激光器发射波长在所述晶片半导体材料的吸收边缘上方的波长的辐射，并且其中所述晶片的温度作为照射的结果升高小于20K。
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9.发明授权Supporting apparatus for supporting a growing single crystal of semiconductor material, and process for producing a single crystal 失效用于支撑日益增长的半导体材料单晶的支撑装置，以及用于制造单晶的工艺公开(公告)号：US07815736B2
公开(公告)日：2010-10-19
申请号：US11509408
申请日：2006-08-24
申请人： Dieter Knerer
发明人： Dieter Knerer
CPC分类号： C30B15/30 , C30B29/06 , Y10S117/902 , Y10S117/911 , Y10T117/10 , Y10T117/1024 , Y10T117/1032 , Y10T117/1072
摘要： An apparatus for supporting a single crystal during Czochralski crystal pulling below a thickened crystal neck has lower bearing surface(s) with a central opening inscribable with a horizontal circle of diameter D1, centered on a vertical axis, the bearing surface(s) connected by connecting element(s) to minimally one securing element for securing to a crystal pulling lifting device, the connecting elements arranged to provide a clear-space in the region above the bearing surface(s) in which a circle of diameter D2 centered on the vertical axis (D2>D1) is inscribable over a length of the vertical axis. The unitary apparatus is useful for crystal ingot growth by immersion into the semiconductor melt prior to growth of a Dash neck and a thickening of the Dash neck. The apparatus is then raised to support the crystal by bearing against the bottom of the thickening.
摘要翻译： 一种用于在Czochralski水晶拉伸加厚的水晶颈部之下支撑单晶的装置具有较低的支承表面，其中心开口具有可垂直于中心的直径为D1的水平圆形的中心开口，所述支承表面通过 连接元件到最小限度的一个固定元件，用于固定到提拉提升装置，连接元件布置成在支承表面上方的区域中提供透明空间，其中以直径为中心的直径为D2的圆 轴（D2> D1）可以在垂直轴的长度上刻录。 该单一设备可用于通过浸入半导体熔体中的晶锭生长，并在破裂颈部生长之前和Dash颈部增厚。 然后将装置升起以通过支承增厚件的底部来支撑晶体。
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10.发明授权Ring-shaped resistance heater for supplying heat to a growing single crystal 有权环形电阻加热器，用于向生长中的单晶提供热量公开(公告)号：US09249525B2
公开(公告)日：2016-02-02
申请号：US13545097
申请日：2012-07-10
申请人： Dieter Knerer , Werner Schachinger
发明人： Dieter Knerer , Werner Schachinger
CPC分类号： C30B15/14 , C30B30/04 , C30B35/00 , H05B3/40 , Y10T117/1068
摘要： A ring-shaped resistance heater for supplying heat to a growing single crystal, contains an upper and a lower ring, which are electrically conductively connected by means of a loop adjacent to a ring gap of one ring, such that the flow direction of electric current which is conducted through the rings is opposite in the rings; connecting elements which hold the upper and lower rings together in a spaced apart relationship; and current leads for conducting electric current through the upper and lower rings.
摘要翻译： 用于向增长的单晶供给热量的环形电阻加热器包含上环和下环，其通过邻近一个环的环间隙的环路导电连接，使得电流的流动方向 通过环进行的环在环中相反; 连接元件，其以间隔的关系将上下环固定在一起; 以及用于通过上下环导通电流的电流引线。
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