Crystal pulling apparatus and method for the production of heavy crystals
    1.
    发明申请
    Crystal pulling apparatus and method for the production of heavy crystals 有权
    水晶拉制装置及重晶体生产方法

    公开(公告)号:US20080022922A1

    公开(公告)日:2008-01-31

    申请号:US11881023

    申请日:2007-07-25

    IPC分类号: C30B15/30

    摘要: A pulling apparatus and a method with which especially heavy crystals (5) can be pulled using the Czochralski method utilizing the pulling apparatus. For this purpose the neck (4) of the crystal (5) has an enlargement (10) beneath which extends the support device. This device includes latches (7), which are moved from a resting position into an operating position in which the latches (7) extend beneath the enlargement (10). Each latch (7) is supported on the base body such that it is swivellable about a pivot axis (8) and can assume two stable positions, namely the resting position and the operating position. Each of these positions is defined by a stop on the base body. When the latch rests on the one stop, its center of gravity, viewed from the neck (4), is located on the other side of the pivot axis (8). When the latch rests on the other stop, the center of gravity is located on this side of the pivot axis (8). The actuation of the latches (7) takes place with actuation means disposed stationarily in the apparatus.

    摘要翻译: 拉伸装置和使用拉伸装置的切克劳斯基法可以拉伸特别重的晶体(5)的方法。 为此,晶体(5)的颈部(4)具有放大(10),在该放大部分(10)延伸支撑装置。 该装置包括闩锁(7),其从静止位置移动到闩锁(7)在放大部分(10)下方延伸的操作位置。 每个闩锁(7)被支撑在基体上,使得其可绕枢转轴线(8)旋转并且可以呈现两个稳定的位置,即静止位置和操作位置。 这些位置中的每一个由基体上的止挡限定。 当闩锁位于一个停止点上时,从颈部(4)观察的其重心位于枢转轴线(8)的另一侧。 当闩锁位于另一个挡块上时,重心位于枢转轴线(8)的这一侧。 闩锁(7)的致动通过固定地设置在该装置中的致动装置进行。

    Controlled feeding Czochralski apparatus
    2.
    发明授权
    Controlled feeding Czochralski apparatus 失效
    控制饲料切克劳斯基仪器

    公开(公告)号:US5587016A

    公开(公告)日:1996-12-24

    申请号:US556048

    申请日:1995-11-13

    摘要: A source (1) is equipped with a conveying device (4) for discharging the particles (2, 2a) at adjustable rates per unit time. A crystal (16), formed from doped particles, is withdrawn from the melting crucible (13) at a predetermined rate per unit time. So that the control process can be conducted smoothly over prolonged periods of time with precise doping, the particles (2, 2a) are fed single file to the melting crucible (13) and counted by at least one sensor (21, 22). The sequence of count pulses is sent to a counter (25) and compared there with a corresponding sequence of reference input pulses. The comparison signal formed from the count pulses and the reference input pulses is used, in accordance with its sign, as a control signal for adjusting the amount of particles being discharged per unit time from source (1) to correspond to the reference value.

    摘要翻译: 源(1)装备有用于以每单位时间可调的速率排放颗粒(2,2a)的输送装置(4)。 从掺杂粒子形成的晶体(16)以每单位时间的预定速率从熔融坩埚(13)中取出。 为了使控制过程能够在精确掺杂的情况下在长时间内平稳地进行,颗粒(2,2a)通过单个文件供给熔化坩埚(13)并被至少一个传感器(21,22)计数。 计数脉冲的序列被发送到计数器(25),并在其中与相应的参考输入脉冲序列进行比较。 根据其符号,使用从计数脉冲和参考输入脉冲形成的比较信号作为用于调节从源(1)每单位时间排出的粒子量对应于参考值的控制信号。

    Crystal growing equipment
    3.
    发明申请
    Crystal growing equipment 有权
    水晶生长设备

    公开(公告)号:US20050087125A1

    公开(公告)日:2005-04-28

    申请号:US10921560

    申请日:2004-08-19

    摘要: The invention presented here relates to a crystal growing equipment. It is equipped in general with a resistance heater for heating a melt (13) as well as with field coils, which generate alternating magnetic field in a crucible, with which flows can be induced in the melt (13). The invention is so designed that the resistance heaters are also devised to function as the field coils, that is, they are built of a hollow cylindrical body (1), in which, by means of a surrounding slit (2) which winds around it, a spiral-shaped single layer current path is formed. This has the advantage that the current needed for the electrical heating in the equipment is also used for the generation of the magnetic field. Thus, neither separate field coils nor a separate current supply is necessary. Further, the resistance heater, which serves as the field coil arranged as a coil array, is high temperature resistant and surrounds the immediate hot core zone of the equipment and thus the region of the melt. Thus the volume, in which the magnetic field must be generated, is minimized. Further, the alternating magnetic field does not need to penetrate through the wall of the vessel of the crystal growing equipment, hence the vessel can be designed as a steel boiler in conventional manner.

    摘要翻译: 本发明涉及一种晶体生长设备。 它通常装有用于加热熔体(13)的电阻加热器以及在坩埚中产生交变磁场的励磁线圈,在熔体(13)中可以引起流动。 本发明的设计使得电阻加热器也被设计成用作场线圈,即它们由中空圆柱体(1)构成,其中通过围绕其缠绕的周围狭缝(2) 形成螺旋状的单层电流路径。 这具有的优点是设备中的电加热所需的电流也用于产生磁场。 因此,不需要单独的场线圈和单独的电流源。 此外,用作线圈阵列的励磁线圈的电阻加热器是耐高温的并且围绕设备的即时热芯区域并且因此围绕熔体的区域。 因此,其中必须产生磁场的体积被最小化。 此外,交变磁场不需要穿过晶体生长设备的容器的壁,因此容器可以以常规方式设计为钢锅炉。

    Apparatus for continuously feeding material to a melting crucible
    4.
    发明授权
    Apparatus for continuously feeding material to a melting crucible 失效
    用于将材料连续供料到熔化坩埚的装置

    公开(公告)号:US5360480A

    公开(公告)日:1994-11-01

    申请号:US70567

    申请日:1993-06-01

    IPC分类号: C30B15/02 C30B29/06

    摘要: A prefusing crucible in a closed prefusing tank is provided above a melting crucible in a closed vacuum container. Prefusing the charge material prevents thermal shock to the melt in the crucible from which monocrystals are drawn. A cover provided over the overflow from the prefusing crucible acts as a dust trap.

    摘要翻译: 在封闭的预制罐中的预坩埚设置在密闭的真空容器中的熔化坩埚的上方。 预充电材料可防止对坩埚中的熔体进行热冲击,坩埚中的熔体被拉出。 在预制坩埚的溢流口上提供的盖子用作除尘器。

    Melting crucible
    5.
    发明申请
    Melting crucible 有权
    熔化坩埚

    公开(公告)号:US20050275144A1

    公开(公告)日:2005-12-15

    申请号:US10927414

    申请日:2004-08-26

    CPC分类号: F27D3/10 F27B14/061 F27B14/14

    摘要: The invention is based on the problem of producing a melt that is as homogeneous as possible, to which fresh material in the form of granulate is continuously supplied. Since the granulate is cooler than the melt, heat sinks form that are especially pronounced when the granulate forms clumps in the melt. Therefore the invention suggests the provision of means for distributing the granulate. Especially suitable means are inductors (6) arranged outside the melting crucible (3) that generate an alternating magnetic field in the melt. In this way, electrical currents are induced there that in turn cause the material flows. The inductors are arranged and controlled in such a way that a rapid distribution of the granulate is effected and thus its rapid melting. In this way, good homogeneity is achieved, especially in the center of the melt where the removal of the melted material also occurs.

    摘要翻译: 本发明是基于生产尽可能均匀的熔体的问题,其中连续供应颗粒形式的新鲜材料。 由于颗粒比熔体更冷,所以当颗粒形状聚集在熔体中时,特别显着的散热器形式。 因此,本发明提出了分配颗粒的方法。 特别合适的装置是布置在熔化坩埚(3)外部的在熔体中产生交变磁场的电感器(6)。 以这种方式,在那里引起电流,从而导致材料流动。 电感器的排列和控制方式使颗粒的快速分布得以实现,从而使其快速熔化。 以这种方式,实现了良好的均匀性,特别是在熔融材料的中心也发生熔融材料的去除。

    Apparatus for drawing single crystals by the czochralski method
    6.
    发明授权
    Apparatus for drawing single crystals by the czochralski method 失效
    通过切克劳斯基法绘制单晶的装置

    公开(公告)号:US5853479A

    公开(公告)日:1998-12-29

    申请号:US759975

    申请日:1996-12-03

    摘要: An image of the meniscus ring (21) between the crystal (20) and the melt (4) is formed by optical means (12, 24) on a sensor, the signals of which yield the actual value for the diameter of the crystal. Two optical measuring devices are provided, the optical paths of which are defined by base points on the meniscus ring (21) and two planes which are offset by 90.degree. to each other and which are parallel to the main axis of the crystal and in tangential contact with the meniscus ring (21). The two optical paths are preferably set up to intersect, their intersection being in the viewing window.

    摘要翻译: 在晶体(20)和熔体(4)之间的弯液面环(21)的图像由传感器上的光学装置(12,24)形成,其信号产生晶体直径的实际值。 设置两个光学测量装置,其光路由弯月面环(21)上的基点和相互偏移90°并且平行于晶体主轴和切线的两个平面限定 与弯液面环(21)接触。 两个光路优选地设置成相交,它们的相交处于观察窗。

    CRYSTAL PULLING APPARATUS AND METHOD FOR THE PRODUCTION OF HEAVY CRYSTALS
    7.
    发明申请
    CRYSTAL PULLING APPARATUS AND METHOD FOR THE PRODUCTION OF HEAVY CRYSTALS 有权
    水晶拉丝装置及重晶石生产方法

    公开(公告)号:US20090188425A1

    公开(公告)日:2009-07-30

    申请号:US12420857

    申请日:2009-04-09

    IPC分类号: C30B15/24 C30B15/30

    摘要: A pulling apparatus and a method with which especially heavy crystals (5) can be pulled using the Czochralski method utilizing the pulling apparatus. For this purpose the neck (4) of the crystal (5) has an enlargement (10) beneath which extends the support device. This device includes latches (7), which are moved from a resting position into an operating position in which the latches (7) extend beneath the enlargement (10). Each latch (7) is supported on the base body such that it is swivellable about a pivot axis (8) and can assume two stable positions, namely the resting position and the operating position. Each of these positions is defined by a stop on the base body. When the latch rests on the one stop, its center of gravity, viewed from the neck (4), is located on the other side of the pivot axis (8). When the latch rests on the other stop, the center of gravity is located on this side of the pivot axis (8). The actuation of the latches (7) takes place with actuation means disposed stationarily in the apparatus.

    摘要翻译: 拉伸装置和使用拉伸装置的切克劳斯基法可以拉伸特别重的晶体(5)的方法。 为此,晶体(5)的颈部(4)具有放大(10),在该放大部分(10)延伸支撑装置。 该装置包括闩锁(7),其从静止位置移动到闩锁(7)在放大部分(10)下方延伸的操作位置。 每个闩锁(7)被支撑在基体上,使得其可绕枢转轴线(8)旋转并且可以呈现两个稳定的位置,即静止位置和操作位置。 这些位置中的每一个由基体上的止挡限定。 当闩锁位于一个停止点上时,从颈部(4)观察的其重心位于枢转轴线(8)的另一侧。 当闩锁位于另一个挡块上时,重心位于枢转轴线(8)的这一侧。 闩锁(7)的致动通过固定地设置在该装置中的致动装置进行。

    Device for controlling crystal growth processes
    8.
    发明授权
    Device for controlling crystal growth processes 失效
    用于控制晶体生长过程的装置

    公开(公告)号:US6126745A

    公开(公告)日:2000-10-03

    申请号:US252667

    申请日:1999-02-19

    摘要: A device for controlling crystal growth processes which run through various process phases, for instance, melting or cool-down, and in which the shape of the crystal has different areas during growth, for instance, a neck and/or a shoulder. Certain process parameters and target values, as well as input values and output values, for instance, a certain gas pressure or a certain rotational speed, are also associated with each of these areas and phases. The linking of these parameters is accomplished by function generators or tables. With the aid of the control device, it is made possible to generate a specially adapted linking of the respectively necessary input and output parameters for each of the special process phases and crystal sections with an essentially uniform construction and a comprehensible structure. This permits an optimized process operation with high reproducibility, in which manual interventions by the operating personnel during the entire process and also during the transition phases between different process steps are not necessary.

    摘要翻译: 用于控制晶体生长过程的装置,其通过各种工艺阶段,例如熔化或冷却,并且其中晶体的形状在生长期间具有不同的区域,例如颈部和/或肩部。 某些过程参数和目标值,以及输入值和输出值,例如某一气体压力或一定的转速也与这些区域和相位中的每一个相关联。 这些参数的链接由函数发生器或表完成。 借助于控制装置,可以以基本均匀的结构和可理解的结构,为每个特殊工艺阶段和晶体部分生成特别适用的输入和输出参数的连接。 这允许以高再现性进行优化的工艺操作,其中操作人员在整个过程期间以及在不同工艺步骤之间的过渡阶段期间的手动干预是不必要的。