Arrangement and method to perform scanning readout of ferroelectric bit charges
    2.
    发明授权
    Arrangement and method to perform scanning readout of ferroelectric bit charges 有权
    执行铁电位电荷的扫描读出的布置和方法

    公开(公告)号:US08264941B2

    公开(公告)日:2012-09-11

    申请号:US11964580

    申请日:2007-12-26

    IPC分类号: G11B9/02

    CPC分类号: G11B9/02 B82Y10/00 G11B9/1409

    摘要: An arrangement, a method and a system to read information stored in a layer of ferroelectric media. The arrangement includes a layer including a ferroelectric media having one or more ferroelectric domains holding bit charges, a domain corresponding to information; a probe having a tip, wherein the media and the tip are adapted to move relative to one another such that the tip scans the ferroelectric domains of the media while applying a contact force to the domains to generate a direct piezoelectric effect within the domains; and circuitry coupled to the tip and adapted to generate a signal in response to an electrical coupling between the tip and the domains while scanning the tip in contact with the domains, the signal corresponding to a readout signal for ferroelectric bit charges stored in the media.

    摘要翻译: 读取存储在铁电介质层中的信息的布置,方法和系统。 该布置包括具有一个或多个保持位电荷的铁电畴的铁电介质的层,对应于信息的畴; 具有尖端的探针,其中介质和尖端适于相对于彼此移动,使得尖端扫描介质的铁电畴,同时向畴施加接触力以在畴内产生直接压电效应; 以及耦合到所述尖端并且适于响应于所述尖端和所述域之间的电耦合而产生信号的电路,同时扫描与所述区域接触的尖端,所述信号对应于存储在所述介质中的铁电位电荷的读出信号。

    ARRANGEMENT AND METHOD TO PERFORM SCANNING READOUT OF FERROELECTRIC BIT CHARGES
    3.
    发明申请
    ARRANGEMENT AND METHOD TO PERFORM SCANNING READOUT OF FERROELECTRIC BIT CHARGES 审中-公开
    执行扫描电容读取的布置和方法

    公开(公告)号:US20130003521A1

    公开(公告)日:2013-01-03

    申请号:US13608878

    申请日:2012-09-10

    IPC分类号: G11B9/02

    CPC分类号: G11B9/02 B82Y10/00 G11B9/1409

    摘要: An arrangement, a method and a system to read information stored in a layer of ferroelectric media. The arrangement includes a layer including a ferroelectric media having one or more ferroelectric domains holding bit charges, a domain corresponding to information; a probe having a tip, wherein the media and the tip are adapted to move relative to one another such that the tip scans the ferroelectric domains of the media while applying a contact force to the domains to generate a direct piezoelectric effect within the domains; and circuitry coupled to the tip and adapted to generate a signal in response to an electrical coupling between the tip and the domains while scanning the tip in contact with the domains, the signal corresponding to a readout signal for ferroelectric bit charges stored in the media

    摘要翻译: 读取存储在铁电介质层中的信息的布置,方法和系统。 该布置包括具有一个或多个保持位电荷的铁电畴的铁电介质的层,对应于信息的畴; 具有尖端的探针,其中介质和尖端适于相对于彼此移动,使得尖端扫描介质的铁电畴,同时向畴施加接触力以在畴内产生直接压电效应; 以及耦合到所述尖端并且适于响应于所述尖端和所述域之间的电耦合而产生信号的电路,同时扫描与所述区域接触的尖端,所述信号对应于存储在所述介质中的铁电位电荷的读出信号

    Arrangement and Method to Perform Scanning Readout of Ferroelectric Bit Charges
    4.
    发明申请
    Arrangement and Method to Perform Scanning Readout of Ferroelectric Bit Charges 有权
    执行铁电位电荷扫描读取的布置和方法

    公开(公告)号:US20090168637A1

    公开(公告)日:2009-07-02

    申请号:US11964580

    申请日:2007-12-26

    IPC分类号: G11B3/00

    CPC分类号: G11B9/02 B82Y10/00 G11B9/1409

    摘要: An arrangement, a method and a system to read information stored in a layer of ferroelectric media. The arrangement includes a layer including a ferroelectric media having one or more ferroelectric domains holding bit charges, a domain corresponding to information; a probe having a tip, wherein the media and the tip are adapted to move relative to one another such that the tip scans the ferroelectric domains of the media while applying a contact force to the domains to generate a direct piezoelectric effect within the domains; and circuitry coupled to the tip and adapted to generate a signal in response to an electrical coupling between the tip and the domains while scanning the tip in contact with the domains, the signal corresponding to a readout signal for ferroelectric bit charges stored in the media

    摘要翻译: 读取存储在铁电介质层中的信息的布置,方法和系统。 该布置包括具有一个或多个保持位电荷的铁电畴的铁电介质的层,对应于信息的畴; 具有尖端的探针,其中介质和尖端适于相对于彼此移动,使得尖端扫描介质的铁电畴,同时向畴施加接触力以在畴内产生直接压电效应; 以及耦合到所述尖端并且适于响应于所述尖端和所述域之间的电耦合而产生信号的电路,同时扫描与所述区域接触的尖端,所述信号对应于存储在所述介质中的铁电位电荷的读出信号

    Probe storage with doped diamond-like carbon medium and current limiter
    6.
    发明授权
    Probe storage with doped diamond-like carbon medium and current limiter 有权
    探针存储与掺杂类金刚石碳介质和限流器

    公开(公告)号:US07738350B2

    公开(公告)日:2010-06-15

    申请号:US11714379

    申请日:2007-03-05

    IPC分类号: G11B9/00

    CPC分类号: G11B9/04 B82Y10/00 G11B9/149

    摘要: According to embodiments of the present invention, a probe storage medium includes a conductive layer as an electrode and a metal, metalloid, and/or non-metal doped diamond-like carbon (DLC) layer disposed on the conductive layer. A probe array may be positioned close proximity with the layer of doped DLC. An individual probe in the probe array may have an atomic force microscope tip. The probe storage medium may be written to by applying a current, voltage, and/or power to the tip between a thresholds current, voltage, and/or power value and a limiting current, voltage, and/or power value. The current, voltage, and/or power cause the layer of DLC to change conductance. The probe storage medium may be read by applying a current, voltage, and/or power to the tip below a threshold current, voltage, and/or power value and sensing the conductance.

    摘要翻译: 根据本发明的实施例,探针存储介质包括作为电极的导电层和设置在导电层上的金属,准金属和/或非金属掺杂的类金刚石碳(DLC)层。 探针阵列可以位于与掺杂DLC层紧密接近的位置。 探针阵列中的单个探针可以具有原子力显微镜尖端。 可以通过在阈值电流,电压和/或功率值与极限电流,电压和/或功率值之间向尖端施加电流,电压和/或功率来写入探针存储介质。 电流,电压和/或功率导致DLC层改变电导。 可以通过将尖端的电流,电压和/或功率施加到阈值电流,电压和/或功率值以下并感测电导来读取探针存储介质。

    Probe storage with doped diamond-like carbon medium and current limiter
    7.
    发明申请
    Probe storage with doped diamond-like carbon medium and current limiter 有权
    探针存储与掺杂类金刚石碳介质和限流器

    公开(公告)号:US20080219133A1

    公开(公告)日:2008-09-11

    申请号:US11714379

    申请日:2007-03-05

    IPC分类号: G11B9/14

    CPC分类号: G11B9/04 B82Y10/00 G11B9/149

    摘要: According to embodiments of the present invention, a probe storage medium includes a conductive layer as an electrode and a metal, metalloid, and/or non-metal doped diamond-like carbon (DLC) layer disposed on the conductive layer. A probe array may be positioned close proximity with the layer of doped DLC. An individual probe in the probe array may have an atomic force microscope tip. The probe storage medium may be written to by applying a current, voltage, and/or power to the tip between a thresholds current, voltage, and/or power value and a limiting current, voltage, and/or power value. The current, voltage, and/or power cause the layer of DLC to change conductance. The probe storage medium may be read by applying a current, voltage, and/or power to the tip below a threshold current, voltage, and/or power value and sensing the conductance.

    摘要翻译: 根据本发明的实施例,探针存储介质包括作为电极的导电层和设置在导电层上的金属,准金属和/或非金属掺杂的类金刚石碳(DLC)层。 探针阵列可以位于与掺杂DLC层紧密接近的位置。 探针阵列中的单个探针可以具有原子力显微镜尖端。 可以通过在阈值电流,电压和/或功率值与极限电流,电压和/或功率值之间向尖端施加电流,电压和/或功率来写入探针存储介质。 电流,电压和/或功率导致DLC层改变电导。 可以通过将尖端的电流,电压和/或功率施加到阈值电流,电压和/或功率值以下并感测电导来读取探针存储介质。