公开(公告)号：US20100002563A1

公开(公告)日：2010-01-07

申请号：US12165851

申请日：2008-07-01

申请人： Byong M. Kim ,  Jingwei Li ,  Pu Yu ,  Donald E. Adams ,  Ying-Hao Chu ,  Yevgeny V. Anoikin ,  Ramamoorthy Ramesh ,  Li-Peng Wang

发明人： Byong M. Kim ,  Jingwei Li ,  Pu Yu ,  Donald E. Adams ,  Ying-Hao Chu ,  Yevgeny V. Anoikin ,  Ramamoorthy Ramesh ,  Li-Peng Wang

IPC分类号： G11B9/00 ,  B32B15/04 ,  H01L21/00

CPC分类号： G11B9/02 ,  Y10T428/12535 ,  Y10T428/12701 ,  Y10T428/24942

摘要： A media for storing information comprises a substrate, a conductive layer formed over the substrate, and a ferroelectric layer epitaxially formed on the conductive layer. The ferroelectric layer includes an a-lattice constant that is substantially matched to an a-lattice constant of the conductive layer and an average c-lattice constant that is longer than an average c-lattice constant of a bulk-grown ferroelectric layer.

摘要翻译： 用于存储信息的介质包括衬底，形成在衬底上的导电层和外延形成在导电层上的铁电层。 铁电层包括基本上与导电层的a晶格常数匹配的a晶格常数和长于体积生长的铁电层的平均c-晶格常数的平均c-晶格常数。

公开(公告)号：US06908802B2

公开(公告)日：2005-06-21

申请号：US10377971

申请日：2003-02-27

申请人： Ramamoorthy Ramesh

发明人： Ramamoorthy Ramesh

IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/115 ,  H01L21/8238

CPC分类号： H01L27/11502 ,  H01L21/76877 ,  H01L27/10852 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/75

摘要： A circuit element that includes a ferroelectric device connected to a substrate device. The circuit element is constructed by fabricating the substrate device in a semiconductor substrate and depositing a dielectric layer over the semiconductor substrate. A via is then etched in the dielectric layer to provide access to the substrate device and filled with copper or tungsten. A layer of a conducting metallic oxide is then deposited on the conducting plug, and a layer of ferroelectric material is deposited on the layer of conducting metal oxide. The layer of conducting metallic oxide is deposited at a temperature below 450° C., preferably at room temperature.

摘要翻译： 一种电路元件，包括连接到衬底器件的铁电体器件。 电路元件通过在半导体衬底中制造衬底器件并在半导体衬底上沉积电介质层来构成。 然后在电介质层中蚀刻通孔以提供对衬底器件的接近并填充有铜或钨。 然后将一层导电金属氧化物沉积在导电插塞上，并且一层铁电材料沉积在导电金属氧化物层上。 导电金属氧化物层在低于450℃的温度下沉积，优选在室温下沉积。

公开(公告)号：US06610549B1

公开(公告)日：2003-08-26

申请号：US09709051

申请日：2000-11-10

申请人： Sanjeev Aggarwal ,  Ramamoorthy Ramesh

发明人： Sanjeev Aggarwal ,  Ramamoorthy Ramesh

IPC分类号： H01L218239

CPC分类号： H01L21/7687 ,  H01L27/11502 ,  H01L28/55 ,  H01L28/75

摘要： A ferroelectric cell, particularly one integrated on a silicon substrate, comprising an amorphous barrier layer interposed between the ferroelectric stack and the silicon. Preferably, the ferroelectric stack includes conductive metal oxide electrodes sandwiching the ferroelectric layer. The metal oxide may act as a templating layer to crystallographically orient the ferroelectric layer. Alternatively, the electrodes and ferroelectric layer may be polycrystalline. The amorphous barrier layer may be composed of an intermetallic alloy, such as Ti3Al, a metal-metalloid, such as Pd—Si, a combination of early and later transition metals, such as Ti—Ni, and other related compound metal systems, such as (Ti, Zr)—Be, that form amorphous metals.

摘要翻译： 特别是集成在硅衬底上的铁电电池，包括介于铁电堆和硅之间的无定形阻挡层。 优选地，铁电体层包括夹着铁电体层的导电金属氧化物电极。 金属氧化物可以用作模板层以使铁电层晶体取向。 或者，电极和铁电层可以是多晶的。 无定形阻挡层可以由诸如Ti 3 Al的金属间合金，诸如Pd-Si的金属 - 准金属，诸如Ti-Ni的早期和稍后的过渡金属的组合以及其它相关的复合金属体系组成，例如 作为（Ti，Zr）-Be，形成无定形金属。

公开(公告)号：US6115281A

公开(公告)日：2000-09-05

申请号：US151903

申请日：1998-09-11

申请人： Sanjeev Aggarwal ,  Scott Robert Perusse ,  Ramamoorthy Ramesh

发明人： Sanjeev Aggarwal ,  Scott Robert Perusse ,  Ramamoorthy Ramesh

IPC分类号： H01L21/02 ,  H04L12/26 ,  H04L12/56 ,  H04Q11/04 ,  G11C11/22

CPC分类号： H04Q11/0478 ,  H01L28/55 ,  H01L28/75 ,  H04L49/3081 ,  H04L2012/5636

摘要： A ferroelectric memory cell integrated with silicon circuitry which require a forming-gas anneal of the silicon circuitry after the ferroelectric stack has been formed. The ferroelectric layer may have a composition such that there is no space in the lattice of the ferroelectric phase to accommodate atomic hydrogen or have a composition with a Curie temperature below the temperature of the forming-gas anneal. Preferably, there is no upper platinum electrode, or it is deposited after the forming-gas anneal. A metal-oxide upper electrode serves as barrier to the forming-gas anneal, and an intermetallic layer positioned above the ferroelectric stack serves as an even better barrier. Forming-gas damage to the ferroelectric stack can be removed by a recovery anneal in a hydrogen-free environment, preferably performed at a temperature above the Curie temperature.

摘要翻译： 与硅电路集成的铁电存储单元，其在形成铁电叠层之后需要硅电路的成形气体退火。 铁电层可以具有使铁电相的晶格中没有空间以适应原子氢或具有低于成形气体退火温度的居里温度的组成的组成。 优选地，不存在上铂电极，或者在成形气体退火之后沉积。 金属氧化物上电极用作形成气体退火的阻挡层，并且位于铁电堆叠上方的金属间层用作更好的屏障。 铁电堆的形成气体损伤可以通过在无氢环境中的回收退火来去除，优选在高于居里温度的温度下进行。

公开(公告)号：US09356224B2

公开(公告)日：2016-05-31

申请号：US12916209

申请日：2010-10-29

申请人： Robert J. Zeches ,  Lane W. Martin ,  Ramamoorthy Ramesh

发明人： Robert J. Zeches ,  Lane W. Martin ,  Ramamoorthy Ramesh

IPC分类号： H01L41/187 ,  H01L41/08 ,  H03H9/02 ,  H01L41/316

CPC分类号： H01L41/081 ,  H01L41/1878 ,  H01L41/316 ,  H03H9/02543

摘要： The present invention provides for a composition comprising a thin film of BiFeO3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO3 thin film, and a second electrode in contact with the BiFeO3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

摘要翻译： 本发明提供一种组合物，其包含厚度范围为20nm至300nm的BiFeO 3薄膜，与BiFeO 3薄膜接触的第一电极和与BiFeO 3薄膜接触的第二电极; 其中所述第一和第二电极是电连通的。 组合物是游离的或基本上不含铅（Pb）。 当向BFO薄膜施加电场时，BFO薄膜具有改变其体积和/或形状的压电特性。

公开(公告)号：US20110133601A1

公开(公告)日：2011-06-09

申请号：US12916209

申请日：2010-10-29

申请人： Robert J. Zeches ,  Lane W. Martin ,  Ramamoorthy Ramesh

发明人： Robert J. Zeches ,  Lane W. Martin ,  Ramamoorthy Ramesh

IPC分类号： H01L41/02 ,  H01L41/00 ,  H01L41/24

CPC分类号： H01L41/081 ,  H01L41/1878 ,  H01L41/316 ,  H03H9/02543

摘要： The present invention provides for a composition comprising a thin film of BiFeO3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO3 thin film, and a second electrode in contact with the BiFeO3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

摘要翻译： 本发明提供一种组合物，其包含厚度范围为20nm至300nm的BiFeO 3薄膜，与BiFeO 3薄膜接触的第一电极和与BiFeO 3薄膜接触的第二电极; 其中所述第一和第二电极是电连通的。 组合物是游离的或基本上不含铅（Pb）。 当向BFO薄膜施加电场时，BFO薄膜具有改变其体积和/或形状的压电特性。

公开(公告)号：US06781176B2

公开(公告)日：2004-08-24

申请号：US10328541

申请日：2002-12-23

申请人： Ramamoorthy Ramesh

发明人： Ramamoorthy Ramesh

IPC分类号： H01L2976

CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L21/28568 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/75

摘要： A ferroelectric memory cell formed on a monocrystalline silicon underlayer, either an epitaxial silicon contact plug to a transistor source or drain or silicon gate region for which the memory cell forms a non-volatile gate. A conductive barrier layer of vanadium or niobium substituted strontium titanate is epitaxially grown over the silicon, and a lower metal oxide electrode layer, a ferroelectric layer and an upper metal oxide electrode layer are epitaxially grown on the barrier layer. No platinum barrier is needed beneath the ferroelectric stack. The invention can be applied to many other functional oxide devices including micromachined electromechanical (MEM) devices and ferromagnetic tri-layer devices.

摘要翻译： 在单晶硅衬底上形成的铁电存储单元，即存储单元形成非易失性栅极的硅晶体管源极或漏极或硅栅极区域的外延硅接触插塞。 在硅上外延生长钒或铌取代钛酸锶的导电阻挡层，并且在阻挡层上外延生长下部金属氧化物电极层，铁电体层和上部金属氧化物电极层。 铁电堆下方不需要铂金屏障。 本发明可以应用于包括微加工机电（MEM）器件和铁磁性三层器件的许多其它功能氧化物器件。

公开(公告)号：US06482538B2

公开(公告)日：2002-11-19

申请号：US09912994

申请日：2001-07-25

申请人： Ramamoorthy Ramesh ,  Yu Wang ,  Jeffrey M. Finder ,  Zhiyi Yu ,  Ravindranath Droopad ,  Kurt Eisenbeiser

发明人： Ramamoorthy Ramesh ,  Yu Wang ,  Jeffrey M. Finder ,  Zhiyi Yu ,  Ravindranath Droopad ,  Kurt Eisenbeiser

IPC分类号： B32B1900

CPC分类号： H01L21/02197 ,  B32B9/00 ,  H01L21/02293 ,  H01L21/31691 ,  H01L28/56 ,  H01L41/0478 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/29 ,  H01L41/319 ,  Y10T428/24917

摘要： A high quality epitaxial layer of monocrystalline Pb(Mg,Nb)O3—PbTiO3 or Pb(Mg1−xNbx)O3—PbTiO3 can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate layer is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.

摘要翻译： 首先在硅晶片上生长钛酸锶层，可以将大量的单晶Pb（Mg，Nb）O3-PbTiO3或Pb（Mg1-xNbx）O3-PbTiO3）的高质量外延层生长在大的硅晶片上。 钛酸锶层是通过硅氧化物的非晶界面层与硅晶片隔开的单晶层。

公开(公告)号：US5358927A

公开(公告)日：1994-10-25

申请号：US531255

申请日：1990-05-31

申请人： Arun Inam ,  Ramamoorthy Ramesh ,  Charles T. Rogers, Jr.

发明人： Arun Inam ,  Ramamoorthy Ramesh ,  Charles T. Rogers, Jr.

IPC分类号： C01G1/00 ,  C01G3/00 ,  C30B23/02 ,  C30B23/08 ,  C30B29/22 ,  H01L39/24 ,  C30B25/22

CPC分类号： H01L39/2496 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  H01L39/2448 ,  H01L39/2461 ,  Y10S505/701 ,  Y10S505/702 ,  Y10S505/729 ,  Y10S505/732

摘要： A method, and the resulting structure, of growing a superconducting perovskite thin film of, for example YBa.sub.2 Cu.sub.3 O.sub.7-x. A buffer layer of, for example, the perovskite PrBa.sub.2 Cu.sub.3 O.sub.7-y, is grown on a crystalline (001) substrate under conditions which favor growth of a,b-axis oriented material. Then the YBa.sub.2 Cu.sub.3 O.sub.7-x layer is deposited on the buffer layer under changed growth conditions that favor growth of c-axis oriented material on the substrate, for example, the substrate temperature is raised by 110.degree. C. However, the buffer layer acts as a template that forces the growth of a,b-axis YBa.sub.2 Cu.sub.3 O.sub.7-x, which nonetheless shows a superconducting transition temperature near that of c-axis oriented films.

摘要翻译： 一种制备例如YBa2Cu3O7-x的超导钙钛矿薄膜的方法和所得结构。 在有利于b轴取向材料生长的条件下，在结晶（001）衬底上生长例如钙钛矿PrBa2Cu3O7-y的缓冲层。 然后，YBa2Cu3O7-x层在有利于生长c轴取向材料在衬底上的变化的生长条件下沉积在缓冲层上，例如衬底温度升高110℃。然而，缓冲层作为 迫使b轴YBa2Cu3O7-x的生长的模板，其仍然表现出接近c轴取向薄膜的超导转变温度。

公开(公告)号：US20070029592A1

公开(公告)日：2007-02-08

申请号：US11197532

申请日：2005-08-04

申请人： Ramamoorthy Ramesh

发明人： Ramamoorthy Ramesh

IPC分类号： H01L29/94

CPC分类号： H01L21/02192 ,  B81B3/0018 ,  H01L21/02362 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/56

摘要： A functional perovskite cell formed on a silicon substrate layer and including a functional layer of bismuth ferrite (BiFeO3 or BFO) sandwiched between two electrode layers. An intermediate template layer, for example, of strontium titanate allows the bismuth ferrite layer to be crystallographically aligned with the silicon substrate layer. Other barrier layers of platinum or an intermetallic alloy produce a polycrystalline BFO layer. The cell may be configured as a non-volatile memory cell or a MEMS structure respectively depending upon the ferroelectric and piezoelectric character of BFO. The films may be grown by MOCVD using a heated vaporizer.

摘要翻译： 形成在硅衬底层上并且包含夹在两个电极层之间的铋铁氧体（BiFeO 3 N 3或BFO）的功能层的功能性钙钛矿电池。 中间模板层例如钛酸锶允许铋铁氧体层与硅衬底层结晶地取向。 铂或金属间化合物的其它阻挡层产生多晶BFO层。 可以根据BFO的铁电和压电特性分别将单元配置为非易失性存储单元或MEMS结构。 可以使用加热蒸发器通过MOCVD生长膜。