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1.发明授权Thin film transistor substrate, method of manufacturing the same, and display apparatus having the same 有权薄膜晶体管基板及其制造方法以及具有该薄膜晶体管基板的显示装置公开(公告)号：US08330257B2
公开(公告)日：2012-12-11
申请号：US13543195
申请日：2012-07-06
申请人： Sang-Ho Moon , Joon-Hoo Choi , Kyu-Sik Cho , Byoung-Seong Jeong , Yong-Hwan Park
发明人： Sang-Ho Moon , Joon-Hoo Choi , Kyu-Sik Cho , Byoung-Seong Jeong , Yong-Hwan Park
IPC分类号： H01L29/786
CPC分类号： H01L29/78678 , H01L29/66765
摘要： In a method of manufacturing a thin film transistor substrate, a semiconductor pattern is formed on a substrate, a first etch stop layer and a second etch stop layer are sequentially formed on the semiconductor pattern, and the second etch stop layer and the first etch stop layer are sequentially patterned to form a second etch stop pattern and a first etch stop pattern. Thus, when the second etch stop layer is patterned using an etchant, the first etch stop layer covers the semiconductor pattern, thereby preventing the semiconductor pattern from being etched by the etchant.
摘要翻译： 在制造薄膜晶体管基板的方法中，半导体图案形成在基板上，第一蚀刻停止层和第二蚀刻停止层依次形成在半导体图案上，第二蚀刻停止层和第一蚀刻停止层 层被顺序地图案化以形成第二蚀刻停止图案和第一蚀刻停止图案。 因此，当使用蚀刻剂对第二蚀刻停止层进行图案化时，第一蚀刻停止层覆盖半导体图案，从而防止半导体图案被蚀刻剂蚀刻。
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公开(公告)号：US08278158B2
公开(公告)日：2012-10-02
申请号：US12554153
申请日：2009-09-04
申请人： Sang-Ho Moon , Joon-Hoo Choi , Kyu-Sik Cho , Byoung-Seong Jeong , Yong-Hwan Park
发明人： Sang-Ho Moon , Joon-Hoo Choi , Kyu-Sik Cho , Byoung-Seong Jeong , Yong-Hwan Park
IPC分类号： H01L21/00
CPC分类号： H01L29/78678 , H01L29/66765
摘要： In a method of manufacturing a thin film transistor substrate, a semiconductor pattern is formed on a substrate, a first etch stop layer and a second etch stop layer are sequentially formed on the semiconductor pattern, and the second etch stop layer and the first etch stop layer are sequentially patterned to form a second etch stop pattern and a first etch stop pattern. Thus, when the second etch stop layer is patterned using an etchant, the first etch stop layer covers the semiconductor pattern, thereby preventing the semiconductor pattern from being etched by the etchant.
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3.发明授权公开(公告)号：US08049402B2
公开(公告)日：2011-11-01
申请号：US11927538
申请日：2007-10-29
CPC分类号： H01L27/3244 , H01L27/3262 , H01L27/3276 , H01L51/56
摘要： An improved OLED display includes a substrate, a semiconductor having a uniform thickness formed on the substrate, first and second ohmic contacts, and a driving voltage line having an input electrode and an output electrode. An insulating layer is formed on the driving voltage line and the output electrode. A control electrode is formed on the insulating layer and overlaps the semiconductor.The method of manufacturing the OLED display entails forming a semiconductor on a substrate, forming a photoresist film on the semiconductor, forming a doped amorphous silicon layer on the photoresist film, removing the photoresist film along with a portion of the doped amorphous silicon disposed on the photoresist film to form first and second ohmic contacts, respectively forming input and output electrodes on the first and second ohmic contacts, forming an insulating layer on the input and output electrodes, and forming a control electrode on the insulating layer.
摘要翻译： 改进的OLED显示器包括衬底，形成在衬底上的均匀厚度的半导体，第一和第二欧姆接触以及具有输入电极和输出电极的驱动电压线。 在驱动电压线和输出电极上形成绝缘层。 控制电极形成在绝缘层上并与半导体重叠。 制造OLED显示器的方法需要在衬底上形成半导体，在半导体上形成光致抗蚀剂膜，在光致抗蚀剂膜上形成掺杂的非晶硅层，去除光致抗蚀剂膜以及配置在 形成第一和第二欧姆接触，分别在第一和第二欧姆触点上形成输入和输出电极，在输入和输出电极上形成绝缘层，并在绝缘层上形成控制电极。
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4.发明申请THIN FILM TRANSISTOR; METHOD OF MANUFACTURING SAME; AND ORGANIC LIGHT EMITTING DEVICE INCLUDING THE THIN FILM TRANSISTOR 有权薄膜晶体管; 制造方法; 和有机发光器件，包括薄膜晶体管公开(公告)号：US20100090222A1
公开(公告)日：2010-04-15
申请号：US12420769
申请日：2009-04-08
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/1229 , H01L27/1214 , H01L27/1251 , H01L27/1255 , H01L27/1288 , H01L29/66757 , H01L29/78618 , H01L29/78696
摘要： A thin film transistor according to one or more embodiments of the present invention includes: an insulation substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode; a semiconductor formed on the gate insulating layer and having a pair of openings facing each other; ohmic contact layers formed in the openings and including a conductive impurity; and a source electrode and a drain electrode in contact with their respective ohmic contact layers. An organic light emitting device in accordance with an embodiment includes: a first signal line and a second signal line intersecting each other on an insulation substrate; a switching thin film transistor connected to the first signal line and the second signal line; a driving thin film transistor connected to the switching thin film transistor; and a light emitting diode (LED) connected to the driving thin film transistor.
摘要翻译： 根据本发明的一个或多个实施例的薄膜晶体管包括：绝缘基板; 形成在所述基板上的栅电极; 形成在所述栅电极上的栅极绝缘层; 形成在所述栅极绝缘层上并且具有彼此面对的一对开口的半导体; 在开口中形成的欧姆接触层包括导电杂质; 以及与其各自的欧姆接触层接触的源电极和漏电极。 根据实施例的有机发光器件包括：在绝缘基板上彼此相交的第一信号线和第二信号线; 连接到第一信号线和第二信号线的开关薄膜晶体管; 连接到开关薄膜晶体管的驱动薄膜晶体管; 以及连接到驱动薄膜晶体管的发光二极管（LED）。
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公开(公告)号：US20080169463A1
公开(公告)日：2008-07-17
申请号：US11982169
申请日：2007-10-31
申请人： Byoung-Seong Jeong , Kyu-Sik Cho , Joon-Hoo Choi , Yong-Hwan Park
发明人： Byoung-Seong Jeong , Kyu-Sik Cho , Joon-Hoo Choi , Yong-Hwan Park
CPC分类号： H01L27/1214 , H01L27/1251 , H01L27/1274 , H01L27/3244 , H01L29/41733 , H01L29/458 , H01L29/78666
摘要： An organic light emitting device includes a substrate, first and second ohmic contacts formed on the substrate, a driving semiconductor formed on the substrate and the first and second ohmic contacts and including polysilicon, a driving input electrode electrically connected to the first ohmic contact, a driving output electrode electrically connected to the second ohmic contact, a first gate insulating layer formed on the driving semiconductor, the driving input electrode, and the driving output electrode, and a driving control electrode formed on the first gate insulating layer and overlapping the driving semiconductor.
摘要翻译： 有机发光器件包括衬底，形成在衬底上的第一和第二欧姆触点，形成在衬底上的驱动半导体和第一和第二欧姆触点并且包括多晶硅，电连接到第一欧姆接触的驱动输入电极， 电连接到第二欧姆接触的驱动输出电极，形成在驱动半导体上的第一栅极绝缘层，驱动输入电极和驱动输出电极;以及驱动控制电极，形成在第一栅极绝缘层上并与驱动半导体 。
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6.发明授权Thin film transistor; method of manufacturing same; and organic light emitting device including the thin film transistor 有权薄膜晶体管; 制造方法; 以及包括薄膜晶体管的有机发光器件公开(公告)号：US08426863B2
公开(公告)日：2013-04-23
申请号：US12420769
申请日：2009-04-08
IPC分类号： H01L29/786
CPC分类号： H01L27/1229 , H01L27/1214 , H01L27/1251 , H01L27/1255 , H01L27/1288 , H01L29/66757 , H01L29/78618 , H01L29/78696
摘要： A thin film transistor according to one or more embodiments of the present invention includes: an insulation substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode; a semiconductor formed on the gate insulating layer and having a pair of openings facing each other; ohmic contact layers formed in the openings and including a conductive impurity; and a source electrode and a drain electrode in contact with their respective ohmic contact layers. An organic light emitting device in accordance with an embodiment includes: a first signal line and a second signal line intersecting each other on an insulation substrate; a switching thin film transistor connected to the first signal line and the second signal line; a driving thin film transistor connected to the switching thin film transistor; and a light emitting diode (LED) connected to the driving thin film transistor.
摘要翻译： 根据本发明的一个或多个实施例的薄膜晶体管包括：绝缘基板; 形成在所述基板上的栅电极; 形成在所述栅电极上的栅极绝缘层; 形成在所述栅极绝缘层上并且具有彼此面对的一对开口的半导体; 在开口中形成的欧姆接触层包括导电杂质; 以及与其各自的欧姆接触层接触的源电极和漏电极。 根据实施例的有机发光器件包括：在绝缘基板上彼此相交的第一信号线和第二信号线; 连接到第一信号线和第二信号线的开关薄膜晶体管; 连接到开关薄膜晶体管的驱动薄膜晶体管; 以及连接到驱动薄膜晶体管的发光二极管（LED）。
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7.发明申请公开(公告)号：US20100090208A1
公开(公告)日：2010-04-15
申请号：US12554153
申请日：2009-09-04
申请人： Sang-Ho MOON , Joon-Hoo Choi , Kyu-Sik Cho , Byoung-Seong Jeong , Yong-Hwan Park
发明人： Sang-Ho MOON , Joon-Hoo Choi , Kyu-Sik Cho , Byoung-Seong Jeong , Yong-Hwan Park
IPC分类号： H01L51/52 , H01L21/336 , H01L29/786
CPC分类号： H01L29/78678 , H01L29/66765
摘要： In a method of manufacturing a thin film transistor substrate, a semiconductor pattern is formed on a substrate, a first etch stop layer and a second etch stop layer are sequentially formed on the semiconductor pattern, and the second etch stop layer and the first etch stop layer are sequentially patterned to form a second etch stop pattern and a first etch stop pattern. Thus, when the second etch stop layer is patterned using an etchant, the first etch stop layer covers the semiconductor pattern, thereby preventing the semiconductor pattern from being etched by the etchant.
摘要翻译： 在制造薄膜晶体管基板的方法中，半导体图案形成在基板上，第一蚀刻停止层和第二蚀刻停止层依次形成在半导体图案上，第二蚀刻停止层和第一蚀刻停止层 层被顺序地图案化以形成第二蚀刻停止图案和第一蚀刻停止图案。 因此，当使用蚀刻剂对第二蚀刻停止层进行图案化时，第一蚀刻停止层覆盖半导体图案，从而防止半导体图案被蚀刻剂蚀刻。
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8.发明申请公开(公告)号：US20080180363A1
公开(公告)日：2008-07-31
申请号：US11927538
申请日：2007-10-29
IPC分类号： G09G3/30
CPC分类号： H01L27/3244 , H01L27/3262 , H01L27/3276 , H01L51/56
摘要： An improved OLED display includes a substrate, a semiconductor having a uniform thickness formed on the substrate, first and second ohmic contacts, and a driving voltage line having an input electrode and an output electrode. An insulating layer is formed on the driving voltage line and the output electrode. A control electrode is formed on the insulating layer and overlaps the semiconductor.The method of manufacturing the OLED display entails forming a semiconductor on a substrate, forming a photoresist film on the semiconductor, forming a doped amorphous silicon layer on the photoresist film, removing the photoresist film along with a portion of the doped amorphous silicon disposed on the photoresist film to form first and second ohmic contacts, respectively forming input and output electrodes on the first and second ohmic contacts, forming an insulating layer on the input and output electrodes, and forming a control electrode on the insulating layer.
摘要翻译： 改进的OLED显示器包括衬底，形成在衬底上的均匀厚度的半导体，第一和第二欧姆接触以及具有输入电极和输出电极的驱动电压线。 在驱动电压线和输出电极上形成绝缘层。 控制电极形成在绝缘层上并与半导体重叠。 制造OLED显示器的方法需要在衬底上形成半导体，在半导体上形成光致抗蚀剂膜，在光致抗蚀剂膜上形成掺杂的非晶硅层，去除光致抗蚀剂膜以及配置在 形成第一和第二欧姆接触，分别在第一和第二欧姆触点上形成输入和输出电极，在输入和输出电极上形成绝缘层，并在绝缘层上形成控制电极。
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公开(公告)号：US07745828B2
公开(公告)日：2010-06-29
申请号：US11982169
申请日：2007-10-31
申请人： Byoung-Seong Jeong , Kyu-Sik Cho , Joon-Hoo Choi , Yong-Hwan Park
发明人： Byoung-Seong Jeong , Kyu-Sik Cho , Joon-Hoo Choi , Yong-Hwan Park
IPC分类号： H01L27/14
CPC分类号： H01L27/1214 , H01L27/1251 , H01L27/1274 , H01L27/3244 , H01L29/41733 , H01L29/458 , H01L29/78666
摘要： An organic light emitting device includes a substrate, first and second ohmic contacts formed on the substrate, a driving semiconductor formed on the substrate and the first and second ohmic contacts and including polysilicon, a driving input electrode electrically connected to the first ohmic contact, a driving output electrode electrically connected to the second ohmic contact, a first gate insulating layer formed on the driving semiconductor, the driving input electrode, and the driving output electrode, and a driving control electrode formed on the first gate insulating layer and overlapping the driving semiconductor.
摘要翻译： 有机发光器件包括衬底，形成在衬底上的第一和第二欧姆触点，形成在衬底上的驱动半导体和第一和第二欧姆触点并且包括多晶硅，电连接到第一欧姆接触的驱动输入电极， 电连接到第二欧姆接触的驱动输出电极，形成在驱动半导体上的第一栅极绝缘层，驱动输入电极和驱动输出电极;以及驱动控制电极，形成在第一栅极绝缘层上并与驱动半导体 。
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10.发明授权Organic light emitting diode display with improved on-current, and method for manufacturing the same 失效具有改善的导通电流的有机发光二极管显示器及其制造方法公开(公告)号：US08232123B2
公开(公告)日：2012-07-31
申请号：US12424639
申请日：2009-04-16
申请人： Kyu-Sik Cho , Byoung-Seong Jeong , Joon-Hoo Choi , Jong-Moo Huh
发明人： Kyu-Sik Cho , Byoung-Seong Jeong , Joon-Hoo Choi , Jong-Moo Huh
IPC分类号： H01L21/336
CPC分类号： H01L27/1251 , H01L27/1214 , H01L27/3262 , Y10S438/905 , Y10S438/906 , Y10S438/974
摘要： An organic light emitting device and a manufacturing method thereof, including a first signal line and a second signal line intersecting each other on an insulating substrate, a switching thin film transistor connected to the first signal line and the second signal line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (“LD”) connected to the driving thin film transistor. The driving thin film transistor includes a driving control electrode and a driving semiconductor overlapping the driving control electrode, crystallized silicon having a doped region and a non-doped region, a driving gate insulating layer disposed between the driving control electrode and the driving semiconductor, and a driving input electrode and a driving output electrode opposite to each other on the driving semiconductor, wherein the interface between the driving gate insulating layer and the driving semiconductor includes nitrogen gas.
摘要翻译： 一种有机发光器件及其制造方法，包括在绝缘基板上彼此相交的第一信号线和第二信号线，连接到第一信号线和第二信号线的开关薄膜晶体管，驱动薄膜 连接到开关薄膜晶体管的晶体管和连接到驱动薄膜晶体管的发光二极管（“LD”）。 驱动薄膜晶体管包括驱动控制电极和与驱动控制电极重叠的驱动半导体，具有掺杂区域和非掺杂区域的结晶硅，设置在驱动控制电极和驱动半导体之间的驱动栅极绝缘层，以及 在驱动半导体上相互相对的驱动输入电极和驱动输出电极，其中驱动栅极绝缘层和驱动半导体之间的界面包括氮气。
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