公开(公告)号：US20150329956A1

公开(公告)日：2015-11-19

申请号：US14367295

申请日：2012-12-10

Applicant: Canon Anelva Corporation

Inventor： Shunichi WAKAYANAGI ,  Eisaku WATANABE

IPC: C23C14/14 ,  C23C14/00 ,  C23C14/34

CPC classification number: C23C14/14 ,  C23C14/0036 ,  C23C14/34 ,  C23C14/351 ,  C23C14/56 ,  H01J37/32477 ,  H01J37/34 ,  H01J37/3426

Abstract: The purpose of the present invention is to prevent a drop in secondary electron emission characteristics due to the inside wall of a chamber being covered by a noble metal film continuously formed by plasma sputtering, and so generate and maintain the plasma. After a noble metal film is formed on a given substrate and before a film is formed on a subsequent substrate, a secondary electron emission film comprising a material having a secondary electron emission coefficient higher than that of the noble metal is formed on the inner wall of the chamber.

Abstract translation: 本发明的目的是防止由于通过等离子体溅射连续形成的贵金属膜覆盖室的内壁而导致的二次电子发射特性的下降，从而产生并维持等离子体。 在给定衬底上形成贵金属膜之后，在随后的衬底上形成膜之前，在第二电子发射膜的内壁上形成包含二次电子发射系数高于贵金属的二次电子发射系数的二次电子发射膜 房间。

公开(公告)号：US20140353149A1

公开(公告)日：2014-12-04

申请号：US14462860

申请日：2014-08-19

Applicant: CANON ANELVA CORPORATION

Inventor： Takuya SEINO ,  Kazumasa NISHIMURA ,  Koji TSUNEKAWA ,  Eisaku WATANABE ,  Shigeo KANEKO

IPC: H01L21/67

CPC classification number: H01L21/67184 ,  H01L21/67173 ,  H01L43/12

Abstract: The present invention provides a TMR element manufacturing apparatus capable of reducing contamination of impurities in magnetic films. According to an embodiment of the present invention, a tunnel magneto-resistance element manufacturing apparatus includes: a load lock device to load and unload a substrate from and to an outside; a first substrate transfer device that is connected to the load lock device, at least one substrate process device being connected to the first substrate transfer device; a first evacuation unit provided in the first substrate transfer device; a second substrate transfer device that is connected to the first substrate transfer device, multiple substrate process devices being connected to the second substrate transfer device; and a second evacuation unit provided in the second substrate transfer device. At least one of the multiple substrate process devices connected to the second substrate transfer device is an oxidation device.

Abstract translation: 本发明提供能够减少磁性膜中的杂质污染的TMR元件制造装置。 根据本发明的实施例，隧道磁阻元件制造装置包括：负载锁定装置，用于从外部加载和卸载基板; 连接到所述负载锁定装置的第一衬底传送装置，连接到所述第一衬底传送装置的至少一个衬底处理装置; 设置在所述第一基板输送装置中的第一排气单元; 连接到第一衬底传送装置的第二衬底传送装置，连接到第二衬底传送装置的多个衬底处理装置; 以及设置在第二基板输送装置中的第二排出单元。 连接到第二衬底转移装置的多个衬底工艺装置中的至少一个是氧化装置。