Method of manufacturing semiconductor apparatus
    1.
    发明授权
    Method of manufacturing semiconductor apparatus 有权
    半导体装置的制造方法

    公开(公告)号:US09466640B2

    公开(公告)日:2016-10-11

    申请号:US14614664

    申请日:2015-02-05

    摘要: A method of manufacturing a semiconductor apparatus, comprising forming a structure including an insulating layer on a substrate, and an electrode on the structure, forming an insulating first film covering the electrode and the structure, forming an opening in a projection, of the first film, formed by a step between upper faces of the electrode and the structure, to expose part of the upper face of the electrode as a first portion, forming a second film covering the first film and the first portion, forming a protective film in the opening by processing the second film, the protective film covering a side face defining the opening and the first portion and being not formed on an upper face of the projection, and forming a third film on the first film and the protective film by spin coating.

    摘要翻译: 一种制造半导体装置的方法,包括在基板上形成包括绝缘层的结构和所述结构上的电极,形成覆盖所述电极和所述结构的绝缘的第一膜,形成所述第一膜的突起中的开口 通过电极的上表面和结构之间的台阶形成,将电极的上表面的一部分暴露为第一部分,形成覆盖第一膜和第一部分的第二膜,在开口中形成保护膜 通过处理第二膜,保护膜覆盖限定开口的侧面和第一部分,并且不形成在突起的上表面上,并且通过旋涂在第一膜和保护膜上形成第三膜。

    METHOD OF MANUFACTURING SOLID-STATE IMAGE SENSOR, SOLID-STATE IMAGE SENSOR, AND CAMERA
    4.
    发明申请
    METHOD OF MANUFACTURING SOLID-STATE IMAGE SENSOR, SOLID-STATE IMAGE SENSOR, AND CAMERA 有权
    制造固态图像传感器,固态图像传感器和摄像机的方法

    公开(公告)号:US20160293657A1

    公开(公告)日:2016-10-06

    申请号:US15078128

    申请日:2016-03-23

    IPC分类号: H01L27/146 H04N9/04

    摘要: A method of manufacturing a solid-state image sensor is provided. The method comprises preparing a structure which is covered by a protective film, depositing a first material by using a first color filter material on the protective film, forming a first color filter from the first material, depositing a second material by using a second color filter material after the forming the first color filter and forming a second color filter from the second material. An upper surface of the protective film has a concave portion. A part of the first material enters the concave portion in the depositing the first material, the first material is patterned so as to form a member in the concave portion from the first material in the forming the first color filter and the second material covers the member in the depositing the second material.

    摘要翻译: 提供一种制造固态图像传感器的方法。 该方法包括制备由保护膜覆盖的结构,通过在保护膜上使用第一滤色器材料沉积第一材料,从第一材料形成第一滤色器,通过使用第二滤色器沉积第二材料 在形成第一滤色器并从第二材料形成第二滤色器之后的材料。 保护膜的上表面具有凹部。 第一材料的一部分在沉积第一材料时进入凹部,第一材料被图案化以在形成第一滤色器时从第一材料在凹部中形成构件,并且第二材料覆盖构件 在沉积第二种材料时。

    METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS
    6.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS 有权
    制造半导体器件的方法

    公开(公告)号:US20150236069A1

    公开(公告)日:2015-08-20

    申请号:US14614664

    申请日:2015-02-05

    摘要: A method of manufacturing a semiconductor apparatus, comprising forming a structure including an insulating layer on a substrate, and an electrode on the structure, forming an insulating first film covering the electrode and the structure, forming an opening in a projection, of the first film, formed by a step between upper faces of the electrode and the structure, to expose part of the upper face of the electrode as a first portion, forming a second film covering the first film and the first portion, forming a protective film in the opening by processing the second film, the protective film covering a side face defining the opening and the first portion and being not formed on an upper face of the projection, and forming a third film on the first film and the protective film by spin coating.

    摘要翻译: 一种制造半导体装置的方法,包括在基板上形成包括绝缘层的结构和所述结构上的电极,形成覆盖所述电极和所述结构的绝缘的第一膜,形成所述第一膜的突起中的开口 通过电极的上表面和结构之间的台阶形成,将电极的上表面的一部分暴露为第一部分,形成覆盖第一膜和第一部分的第二膜,在开口中形成保护膜 通过处理第二膜,保护膜覆盖限定开口的侧面和第一部分,并且不形成在突起的上表面上,并且通过旋涂在第一膜和保护膜上形成第三膜。