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    SOLID-STATE IMAGE SENSING ELEMENT AND IMAGING SYSTEM
    1.
    发明申请
    SOLID-STATE IMAGE SENSING ELEMENT AND IMAGING SYSTEM 审中-公开

    公开(公告)号：US20180294307A1

    公开(公告)日：2018-10-11

    申请号：US16005507

    申请日：2018-06-11

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Masatsugu Itahashi ,  Toshiaki Ono ,  Hidekazu Takahashi ,  Naoki Inatani ,  Yu Maehashi

    IPC: H01L27/146 ,  H04N5/378 ,  H04N5/376 ,  H01L31/09 ,  H01L31/028 ,  H01L27/30

    Abstract: Each of a plurality of pixels arranged in two dimensions includes a photoelectric conversion unit including a pixel electrode, a photoelectric conversion layer provided above the pixel electrode, and a counter electrode provided so as to sandwich the photoelectric conversion layer between the counter electrode and the pixel electrode, and a microlens arranged above the photoelectric conversion unit. The plurality of pixels includes a first pixel and a plurality of second pixels. At least either the pixel electrodes of the plurality of second pixels are smaller than the pixel electrode of the first pixel or the counter electrodes of the plurality of second pixels are smaller than the counter electrode of the first pixel, and a configuration between the counter electrode and the microlens of the first pixel is the same as a configuration between the counter electrode and the microlens of each of the plurality of second pixels.

    Method of manufacturing semiconductor apparatus
    3.
    发明授权
    Method of manufacturing semiconductor apparatus 有权
    半导体装置的制造方法

    公开(公告)号：US09466640B2

    公开(公告)日：2016-10-11

    申请号：US14614664

    申请日：2015-02-05

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Naoki Inatani ,  Daisuke Shimoyama ,  Kei Aoki ,  Masaki Kurihara

    IPC: H01L27/146 ,  H01L31/0216 ,  H01L31/0232

    CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14687 ,  H01L31/0216 ,  H01L31/02327

    Abstract: A method of manufacturing a semiconductor apparatus, comprising forming a structure including an insulating layer on a substrate, and an electrode on the structure, forming an insulating first film covering the electrode and the structure, forming an opening in a projection, of the first film, formed by a step between upper faces of the electrode and the structure, to expose part of the upper face of the electrode as a first portion, forming a second film covering the first film and the first portion, forming a protective film in the opening by processing the second film, the protective film covering a side face defining the opening and the first portion and being not formed on an upper face of the projection, and forming a third film on the first film and the protective film by spin coating.

    Abstract translation: 一种制造半导体装置的方法，包括在基板上形成包括绝缘层的结构和所述结构上的电极，形成覆盖所述电极和所述结构的绝缘的第一膜，形成所述第一膜的突起中的开口 通过电极的上表面和结构之间的台阶形成，将电极的上表面的一部分暴露为第一部分，形成覆盖第一膜和第一部分的第二膜，在开口中形成保护膜 通过处理第二膜，保护膜覆盖限定开口的侧面和第一部分，并且不形成在突起的上表面上，并且通过旋涂在第一膜和保护膜上形成第三膜。

    SOLID-STATE IMAGE PICKUP ELEMENT AND IMAGE PICKUP SYSTEM
    4.
    发明申请
    SOLID-STATE IMAGE PICKUP ELEMENT AND IMAGE PICKUP SYSTEM 审中-公开

    公开(公告)号：US20190037160A1

    公开(公告)日：2019-01-31

    申请号：US16148490

    申请日：2018-10-01

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Toshiaki Ono ,  Masatsugu Itahashi ,  Naoki Inatani ,  Yu Maehashi ,  Hidekazu Takahashi

    IPC: H04N5/3745 ,  H04N5/217 ,  H01L27/146

    Abstract: At least one solid-state image pickup element includes a plurality of pixels that are arranged in a two-dimensional manner. Each of the plurality of pixels includes a plurality of photoelectric conversion units each including a pixel electrode, a photoelectric conversion layer disposed on the pixel electrode, and a counter electrode disposed such that the photoelectric conversion layer is sandwiched between the pixel electrode and the counter electrode. In one or more embodiments, each of the plurality of pixels also includes a microlens disposed on the plurality of photoelectric conversion units.

    SOLID-STATE IMAGE SENSING ELEMENT AND IMAGING SYSTEM
    9.
    发明申请
    SOLID-STATE IMAGE SENSING ELEMENT AND IMAGING SYSTEM 有权
    固态图像感测元件和成像系统

    公开(公告)号：US20160035780A1

    公开(公告)日：2016-02-04

    申请号：US14811659

    申请日：2015-07-28

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Masatsugu Itahashi ,  Toshiaki Ono ,  Hidekazu Takahashi ,  Naoki Inatani ,  Yu Maehashi

    IPC: H01L27/146 ,  H01L27/30 ,  H01L31/09 ,  H01L31/028 ,  H04N5/378 ,  H04N5/376

    CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14665 ,  H01L27/307 ,  H01L31/028 ,  H01L31/095 ,  H04N5/3765 ,  H04N5/378

    Abstract: Each of a plurality of pixels arranged in two dimensions includes a photoelectric conversion unit including a pixel electrode, a photoelectric conversion layer provided above the pixel electrode, and a counter electrode provided so as to sandwich the photoelectric conversion layer between the counter electrode and the pixel electrode, and a microlens arranged above the photoelectric conversion unit. The plurality of pixels includes a first pixel and a plurality of second pixels. At least either the pixel electrodes of the plurality of second pixels are smaller than the pixel electrode of the first pixel or the counter electrodes of the plurality of second pixels are smaller than the counter electrode of the first pixel, and a configuration between the counter electrode and the microlens of the first pixel is the same as a configuration between the counter electrode and the microlens of each of the plurality of second pixels.

    Abstract translation: 以二维排列的多个像素中的每一个包括：光电转换单元，包括像素电极，设置在像素电极上方的光电转换层，以及设置为将光电转换层夹在对电极和像素之间的对电极 电极和布置在光电转换单元上方的微透镜。 多个像素包括第一像素和多个第二像素。 多个第二像素的像素电极中的至少任一个小于第一像素的像素电极，或者多个第二像素的对置电极小于第一像素的对电极，并且对置电极 并且第一像素的微透镜与多个第二像素中的每一个的对电极和微透镜之间的配置相同。

    METHOD OF MANUFACTURING SOLID-STATE IMAGE SENSOR, SOLID-STATE IMAGE SENSOR, AND CAMERA
    10.
    发明申请
    METHOD OF MANUFACTURING SOLID-STATE IMAGE SENSOR, SOLID-STATE IMAGE SENSOR, AND CAMERA 有权
    制造固态图像传感器，固态图像传感器和摄像机的方法

    公开(公告)号：US20160293657A1

    公开(公告)日：2016-10-06

    申请号：US15078128

    申请日：2016-03-23

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Takayuki Sumida ,  Masao Ishioka ,  Kei Aoki ,  Yasuhiro Kawabata ,  Naoki Inatani ,  Masaki Kurihara

    IPC: H01L27/146 ,  H04N9/04

    CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14685

    Abstract: A method of manufacturing a solid-state image sensor is provided. The method comprises preparing a structure which is covered by a protective film, depositing a first material by using a first color filter material on the protective film, forming a first color filter from the first material, depositing a second material by using a second color filter material after the forming the first color filter and forming a second color filter from the second material. An upper surface of the protective film has a concave portion. A part of the first material enters the concave portion in the depositing the first material, the first material is patterned so as to form a member in the concave portion from the first material in the forming the first color filter and the second material covers the member in the depositing the second material.

    Abstract translation: 提供一种制造固态图像传感器的方法。 该方法包括制备由保护膜覆盖的结构，通过在保护膜上使用第一滤色器材料沉积第一材料，从第一材料形成第一滤色器，通过使用第二滤色器沉积第二材料 在形成第一滤色器并从第二材料形成第二滤色器之后的材料。 保护膜的上表面具有凹部。 第一材料的一部分在沉积第一材料时进入凹部，第一材料被图案化以在形成第一滤色器时从第一材料在凹部中形成构件，并且第二材料覆盖构件 在沉积第二种材料时。

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