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1.发明申请LIGHT TRANSMISSION MEMBER, IMAGE PICKUP DEVICE, AND METHOD OF MANUFACTURING SAME 有权光传输部件，图像拾取器件及其制造方法公开(公告)号：US20130224897A1
公开(公告)日：2013-08-29
申请号：US13773281
申请日：2013-02-21
发明人： Masao Ishioka
IPC分类号： H01L31/0232
CPC分类号： H01L31/02325 , H01L27/14621 , H01L27/14627
摘要： A method of forming a light transmission member includes a plurality of processes to form a plurality of sections of the light transmission member. Notably, after a first class process to form light transmission portions having narrow-band light transmission properties in a first class section group, a second class process is performed to form light transmission portions in a second class section group, and a fourth class process is performed to form light transmission portions having wide-band light transmission properties in a first section.
摘要翻译： 形成透光构件的方法包括多个处理以形成透光构件的多个部分。 值得注意的是，在第一类部分组中形成具有窄带透光性的光传输部分的一级处理之后，执行第二类处理以在第二类部分组中形成光传输部分，并且第四类处理为 执行以在第一部分中形成具有宽带透光性的光传输部分。
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公开(公告)号：US20180247967A1
公开(公告)日：2018-08-30
申请号：US15905409
申请日：2018-02-26
IPC分类号： H01L27/146
CPC分类号： H01L27/14625 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/31116 , H01L21/3115 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14636 , H01L27/14685
摘要： There is provided a photoelectric conversion device in which a distance from a main surface to an inner surface of a first part of a dielectric film is smaller than a distance from the main surface to a top surface of a light shielding member, a distance from the main surface to an outer surface of the first part is smaller than a distance from the main surface to an outer surface of a second part of the dielectric film, an outer surface of a third part inclines to the top surface, a surface of a dielectric member inclines to the top surface, between the dielectric film and the top surface in a normal direction, and the dielectric member has a refractive index lower than a refractive index of the dielectric film.
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公开(公告)号：US20150364514A1
公开(公告)日：2015-12-17
申请号：US14732997
申请日：2015-06-08
发明人： Nobutaka Ukigaya , Masao Ishioka
IPC分类号： H01L27/146 , H01L23/544 , H01L31/18
CPC分类号： H01L23/544 , H01L27/14621 , H01L27/14627 , H01L27/14698 , H01L31/1868 , H01L2223/54426 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device is provided. The method includes forming a passivation film on a substrate including a plurality of element regions and a scribe region, forming a trench in the passivation film in a region of the scribe region along an outer edge of each of the element regions, and forming a film on the passivation film in which the trench has been formed by coating. A depth of a first section in a first position of the trench is shallower than a depth of a second section in a second position of the trench. A width of the first section is wider than a width of the second section.
摘要翻译： 提供一种制造半导体器件的方法。 该方法包括在包括多个元件区域和划线区域的基板上形成钝化膜，沿着每个元件区域的外边缘在划线区域的区域中的钝化膜中形成沟槽，并形成膜 在其上通过涂覆形成沟槽的钝化膜上。 在沟槽的第一位置的第一部分的深度比沟槽的第二位置中的第二部分的深度浅。 第一部分的宽度比第二部分的宽度宽。
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4.发明授权公开(公告)号：US08748213B2
公开(公告)日：2014-06-10
申请号：US13773281
申请日：2013-02-21
发明人： Masao Ishioka
IPC分类号： H01L21/00
CPC分类号： H01L31/02325 , H01L27/14621 , H01L27/14627
摘要： A method of forming a light transmission member includes a plurality of processes to form a plurality of sections of the light transmission member. Notably, after a first class process to form light transmission portions having narrow-band light transmission properties in a first class section group, a second class process is performed to form light transmission portions in a second class section group, and a fourth class process is performed to form light transmission portions having wide-band light transmission properties in a first section.
摘要翻译： 形成透光构件的方法包括多个处理以形成透光构件的多个部分。 值得注意的是，在第一类部分组中形成具有窄带透光性的光传输部分的一级处理之后，执行第二类处理以在第二类部分组中形成光透射部分，并且第四类处理 执行以在第一部分中形成具有宽带透光性的光传输部分。
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公开(公告)号：US10096545B2
公开(公告)日：2018-10-09
申请号：US15279135
申请日：2016-09-28
发明人： Akihiro Kawano , Tsutomu Tange , Masao Ishioka , Koichi Tazoe
IPC分类号： H01L27/146 , H01L23/522 , H01L27/092 , H01L29/78 , H01L21/8238
摘要： There is provided an image capturing apparatus including a pixel circuit that generates a pixel signal based on an electric charge generated by photoelectric conversion and a logic circuit that outputs a signal based on the pixel signal. The image capturing apparatus includes a first contact plug connected to a source or a drain of a first transistor constituting the pixel circuit and a second contact plug connected to a source or a drain of a second transistor constituting the logic circuit. A diameter of the first contact plug is smaller than a diameter of the second contact plug.
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公开(公告)号：US20170092582A1
公开(公告)日：2017-03-30
申请号：US15279135
申请日：2016-09-28
发明人： Akihiro Kawano , Tsutomu Tange , Masao Ishioka , Koichi Tazoe
IPC分类号： H01L23/522 , H01L27/146 , H01L21/8238 , H01L27/092 , H01L29/78
CPC分类号： H01L23/5226 , H01L21/823814 , H01L21/823878 , H01L27/092 , H01L27/14636 , H01L27/14645 , H01L29/7833
摘要： There is provided an image capturing apparatus including a pixel circuit that generates a pixel signal based on an electric charge generated by photoelectric conversion and a logic circuit that outputs a signal based on the pixel signal. The image capturing apparatus includes a first contact plug connected to a source or a drain of a first transistor constituting the pixel circuit and a second contact plug connected to a source or a drain of a second transistor constituting the logic circuit. A diameter of the first contact plug is smaller than a diameter of the second contact plug.
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7.发明授权Method of manufacturing semiconductor device and structure including passivation film with a trench having sections of different depths and widths 有权制造包括具有不同深度和宽度的部分的沟槽的钝化膜的半导体器件和结构的方法公开(公告)号：US09508654B2
公开(公告)日：2016-11-29
申请号：US14732997
申请日：2015-06-08
发明人： Nobutaka Ukigaya , Masao Ishioka
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50 , H01L21/00 , H01L23/544 , H01L31/18 , H01L27/146
CPC分类号： H01L23/544 , H01L27/14621 , H01L27/14627 , H01L27/14698 , H01L31/1868 , H01L2223/54426 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device is provided. The method includes forming a passivation film on a substrate including a plurality of element regions and a scribe region, forming a trench in the passivation film in a region of the scribe region along an outer edge of each of the element regions, and forming a film on the passivation film in which the trench has been formed by coating. A depth of a first section in a first position of the trench is shallower than a depth of a second section in a second position of the trench. A width of the first section is wider than a width of the second section.
摘要翻译： 提供一种制造半导体器件的方法。 该方法包括在包括多个元件区域和划线区域的基板上形成钝化膜，沿着每个元件区域的外边缘在划线区域的区域中的钝化膜中形成沟槽，并形成膜 在其上通过涂覆形成沟槽的钝化膜上。 在沟槽的第一位置的第一部分的深度比沟槽的第二位置中的第二部分的深度浅。 第一部分的宽度比第二部分的宽度宽。
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公开(公告)号：US20210199596A1
公开(公告)日：2021-07-01
申请号：US17131841
申请日：2020-12-23
发明人： Kosuke Asano , Hideki Ina , Yoshiyuki Nakagawa , Junya Tamaki , Takehiro Toyoda , Tomoyuki Tezuka , Yasushi Ohta , Masao Ishioka , Yasushi Matsuno
IPC分类号： G01N21/95 , G01N21/956
摘要： An inspection apparatus inspecting a wafer on which a plurality of patterns are formed by a plurality of exposure shots, the inspection apparatus comprising: acquisition unit configured to acquire first information representing a positional relation between an inspection mark included in a pattern formed by a first exposure shot and an inspection mark included in a pattern formed by a second exposure shot, and second information representing a positional relation between the inspection mark included in the pattern formed by the second exposure shot and an inspection mark included in a pattern formed by a third exposure shot; and derivation unit configured to derive a linear component of an error caused by a reticle, and a linear component of an error caused by a position of a wafer, on the basis of the first information and the second information.
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公开(公告)号：US10178286B2
公开(公告)日：2019-01-08
申请号：US14838145
申请日：2015-08-27
发明人： Masao Ishioka , Daisuke Shimoyama , Takayuki Sumida , Kei Aoki , Yasuhiro Kawabata , Naoki Inatani , Tomoyuki Tezuka , Jun Iwata , Masaki Kurihara
摘要： A method for forming a color filter array includes a step of exposing a photosensitive color filter film, a step of forming a color filter array from the color filter film by developing the color filter film using a developer, and a step of cleaning the color filter array while rotating the color filter array and moving a nozzle for spraying fluid containing liquid and gas above the color filter array in a direction intersecting with an axis of the rotation. The method reduces variation in thickness of a color filter that is generated in the cleaning step.
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公开(公告)号：US09893110B2
公开(公告)日：2018-02-13
申请号：US15078128
申请日：2016-03-23
发明人： Takayuki Sumida , Masao Ishioka , Kei Aoki , Yasuhiro Kawabata , Naoki Inatani , Masaki Kurihara
IPC分类号： H01L27/146 , H04N9/04
CPC分类号： H01L27/14645 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14636 , H01L27/14685
摘要： A method of manufacturing a solid-state image sensor is provided. The method comprises preparing a structure which is covered by a protective film, depositing a first material by using a first color filter material on the protective film, forming a first color filter from the first material, depositing a second material by using a second color filter material after the forming the first color filter and forming a second color filter from the second material. An upper surface of the protective film has a concave portion. A part of the first material enters the concave portion in the depositing the first material, the first material is patterned so as to form a member in the concave portion from the first material in the forming the first color filter and the second material covers the member in the depositing the second material.
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