公开(公告)号：US09786717B2

公开(公告)日：2017-10-10

申请号：US15095486

申请日：2016-04-11

申请人： CANON KABUSHIKI KAISHA

发明人： Koichi Tazoe

IPC分类号： H01L27/146 ,  H01L27/14 ,  H01L27/12

CPC分类号： H01L27/14698 ,  H01L27/14607 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636

摘要： A method of manufacturing a photoelectric conversion device includes forming a wiring structure above a semiconductor substrate including a photoelectric converter, forming, by a plasma CVD method, a first insulating film which contains hydrogen, above an uppermost wiring layer in the wiring structure, performing, after formation of the first insulating film, first annealing in a hydrogen containing atmosphere on a structure including the semiconductor substrate, the wiring structure, and the first insulating film, forming a second insulating film above the first insulating film after the first annealing, and performing, after formation of the second insulating film, second annealing in the hydrogen containing atmosphere on a structure including the semiconductor substrate, the wiring structure, the first insulating film, and the second insulating film.

公开(公告)号：US09368668B2

公开(公告)日：2016-06-14

申请号：US14316369

申请日：2014-06-26

申请人： CANON KABUSHIKI KAISHA

发明人： Koichi Tazoe ,  Yu Arishima ,  Akira Okita ,  Kazuki Ohshitanai ,  Yasuharu Ota

IPC分类号： H01L27/00 ,  H01L31/18 ,  H01L27/146

CPC分类号： H01L31/18 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14641 ,  H01L27/14689

摘要： A method comprises preparing a semiconductor substrate having a first portion, and a second portion including a first region and a second region; forming an active region in the first portion, and an isolating portion of an insulator defining the active region in the second portion; forming a first semiconductor region of a first conductivity type configuring a first photoelectric conversion element, a second semiconductor region of first conductivity type configuring a second photoelectric conversion element, a third semiconductor region of first conductivity type, a fourth semiconductor region of the conductivity type, a first gate electrode configuring a first transfer transistor, and a second gate electrode configuring a second transfer; exposing the first region of the semiconductor substrate, and performing ion implantation masked by a first photoresist pattern covering the second region of the semiconductor substrate, thus forming a fifth semiconductor region of a second conductivity type.

摘要翻译： 一种方法包括制备具有第一部分的半导体衬底和包括第一区域和第二区域的第二部分; 在第一部分中形成有源区，以及在第二部分中限定有源区的绝缘体的隔离部分; 形成构成第一光电转换元件的第一导电类型的第一半导体区域，构成第二光电转换元件的第一导电类型的第二半导体区域，第一导电类型的第三半导体区域，导电类型的第四半导体区域， 构成第一转移晶体管的第一栅电极和构成第二转移的第二栅电极; 暴露半导体衬底的第一区域，并执行由覆盖半导体衬底的第二区域的第一光刻胶图案掩蔽的离子注入，从而形成第二导电类型的第五半导体区域。

公开(公告)号：US20190229220A1

公开(公告)日：2019-07-25

申请号：US16232418

申请日：2018-12-26

申请人： CANON KABUSHIKI KAISHA

发明人： Koichi Tazoe

IPC分类号： H01L31/0203 ,  H01L27/146 ,  G06T7/55

摘要： Provided is an image pickup device including: a semiconductor substrate including a pixel region in which pixels are arranged and a pad electrode region on which a pad electrode portion is disposed; a wiring layer formed on the semiconductor substrate and including the pad electrode portion; a planarizing layer formed on the wiring layer and formed in a portion upper than the pad electrode portion in the pad electrode region, the planarizing layer including an organic material; and an inorganic film formed on the planarizing layer. An opening having a side wall portion is formed in the planarizing layer and the inorganic film so that an upper surface of the pad electrode portion is exposed. A metal film that covers at least a surface that forms the side wall portion of the planarizing layer is disposed in the opening.

公开(公告)号：US20180286904A1

公开(公告)日：2018-10-04

申请号：US15926948

申请日：2018-03-20

申请人： CANON KABUSHIKI KAISHA

发明人： Koichi Tazoe ,  Kazuya Igarashi

IPC分类号： H01L27/146

CPC分类号： H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L33/508

摘要： A color filter layer and a light transmissive layer have a groove between a first color filter and a second color filter and between a first light transmissive portion and a second light transmissive portion. The groove contains a member located at least between the first color filter and the second color filter. The member has a refractive index higher than 1.0.

公开(公告)号：US20160315116A1

公开(公告)日：2016-10-27

申请号：US15095486

申请日：2016-04-11

申请人： CANON KABUSHIKI KAISHA

发明人： Koichi Tazoe

IPC分类号： H01L27/146

CPC分类号： H01L27/14698 ,  H01L27/14607 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636

摘要： A method of manufacturing a photoelectric conversion device includes forming a wiring structure above a semiconductor substrate including a photoelectric converter, forming, by a plasma CVD method, a first insulating film which contains hydrogen, above an uppermost wiring layer in the wiring structure, performing, after formation of the first insulating film, first annealing in a hydrogen containing atmosphere on a structure including the semiconductor substrate, the wiring structure, and the first insulating film, forming a second insulating film above the first insulating film after the first annealing, and performing, after formation of the second insulating film, second annealing in the hydrogen containing atmosphere on a structure including the semiconductor substrate, the wiring structure, the first insulating film, and the second insulating film.

摘要翻译： 一种制造光电转换装置的方法包括在包括光电转换器的半导体衬底之上形成布线结构，通过等离子体CVD法在布线结构中的最上层布线层上方形成含有氢的第一绝缘膜， 在形成第一绝缘膜之后，在包含半导体衬底，布线结构和第一绝缘膜的结构的含氢气氛中进行第一退火，在第一退火之后在第一绝缘膜上方形成第二绝缘膜，并执行 在形成第二绝缘膜之后，在包含半导体衬底，布线结构，第一绝缘膜和第二绝缘膜的结构的含氢气氛中进行第二退火。

公开(公告)号：US20150001377A1

公开(公告)日：2015-01-01

申请号：US14316369

申请日：2014-06-26

申请人： CANON KABUSHIKI KAISHA

发明人： Koichi Tazoe ,  Yu Arishima ,  Akira Okita ,  Kazuki Ohshitanai ,  Yasuharu Ota

IPC分类号： H01L27/146 ,  H01L21/8234 ,  H01L31/18

CPC分类号： H01L31/18 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14641 ,  H01L27/14689

摘要： A method comprises preparing a semiconductor substrate having a first portion, and a second portion including a first region and a second region; forming an active region in the first portion, and an isolating portion of an insulator defining the active region in the second portion; forming a first semiconductor region of a first conductivity type configuring a first photoelectric conversion element, a second semiconductor region of first conductivity type configuring a second photoelectric conversion element, a third semiconductor region of first conductivity type, a fourth semiconductor region of the conductivity type, a first gate electrode configuring a first transfer transistor, and a second gate electrode configuring a second transfer; exposing the first region of the semiconductor substrate, and performing ion implantation masked by a first photoresist pattern covering the second region of the semiconductor substrate, thus forming a fifth semiconductor region of a second conductivity type.

摘要翻译： 一种方法包括制备具有第一部分的半导体衬底和包括第一区域和第二区域的第二部分; 在第一部分中形成有源区，以及在第二部分中限定有源区的绝缘体的隔离部分; 形成构成第一光电转换元件的第一导电类型的第一半导体区域，构成第二光电转换元件的第一导电类型的第二半导体区域，第一导电类型的第三半导体区域，导电类型的第四半导体区域， 构成第一转移晶体管的第一栅电极和构成第二转移的第二栅电极; 暴露半导体衬底的第一区域，并执行由覆盖半导体衬底的第二区域的第一光刻胶图案掩蔽的离子注入，从而形成第二导电类型的第五半导体区域。

公开(公告)号：US10096545B2

公开(公告)日：2018-10-09

申请号：US15279135

申请日：2016-09-28

申请人： CANON KABUSHIKI KAISHA

发明人： Akihiro Kawano ,  Tsutomu Tange ,  Masao Ishioka ,  Koichi Tazoe

IPC分类号： H01L27/146 ,  H01L23/522 ,  H01L27/092 ,  H01L29/78 ,  H01L21/8238

摘要： There is provided an image capturing apparatus including a pixel circuit that generates a pixel signal based on an electric charge generated by photoelectric conversion and a logic circuit that outputs a signal based on the pixel signal. The image capturing apparatus includes a first contact plug connected to a source or a drain of a first transistor constituting the pixel circuit and a second contact plug connected to a source or a drain of a second transistor constituting the logic circuit. A diameter of the first contact plug is smaller than a diameter of the second contact plug.

公开(公告)号：US20170092582A1

公开(公告)日：2017-03-30

申请号：US15279135

申请日：2016-09-28

申请人： CANON KABUSHIKI KAISHA

发明人： Akihiro Kawano ,  Tsutomu Tange ,  Masao Ishioka ,  Koichi Tazoe

IPC分类号： H01L23/522 ,  H01L27/146 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78

CPC分类号： H01L23/5226 ,  H01L21/823814 ,  H01L21/823878 ,  H01L27/092 ,  H01L27/14636 ,  H01L27/14645 ,  H01L29/7833

摘要： There is provided an image capturing apparatus including a pixel circuit that generates a pixel signal based on an electric charge generated by photoelectric conversion and a logic circuit that outputs a signal based on the pixel signal. The image capturing apparatus includes a first contact plug connected to a source or a drain of a first transistor constituting the pixel circuit and a second contact plug connected to a source or a drain of a second transistor constituting the logic circuit. A diameter of the first contact plug is smaller than a diameter of the second contact plug.

公开(公告)号：US10263023B2

公开(公告)日：2019-04-16

申请号：US15926948

申请日：2018-03-20

申请人： CANON KABUSHIKI KAISHA

发明人： Koichi Tazoe ,  Kazuya Igarashi

IPC分类号： H01L33/50 ,  H01L27/146

摘要： A color filter layer and a light transmissive layer have a groove between a first color filter and a second color filter and between a first light transmissive portion and a second light transmissive portion. The groove contains a member located at least between the first color filter and the second color filter. The member has a refractive index higher than 1.0.

公开(公告)号：US09196645B2

公开(公告)日：2015-11-24

申请号：US14316476

申请日：2014-06-26

申请人： CANON KABUSHIKI KAISHA

发明人： Koichi Tazoe ,  Yu Arishima ,  Akira Okita ,  Kazuki Ohshitanai ,  Yasuharu Ota

IPC分类号： H01L27/148 ,  H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14689

摘要： A photoelectric conversion device includes: a first semiconductor region of a first conductivity type, which configures a first photoelectric conversion element; a second semiconductor region of the first conductivity type, which configures a second photoelectric conversion element; a third semiconductor region of the first conductivity type; a fourth semiconductor region of the first conductivity type; a first gate electrode, configuring a first transfer transistor conjointly; and a second gate electrode, configuring a second transfer transistor. At a side of the first gate electrode which is toward the first semiconductor region in plan view of the surface of the semiconductor substrate, a length of the side of the first gate electrode toward the first semiconductor region, is shorter than a length of the active region, and a length of the side of the first gate electrode toward the first semiconductor region, is longer than a length of the first semiconductor region.

摘要翻译： 光电转换装置包括：构成第一光电转换元件的第一导电类型的第一半导体区域; 构成第二光电转换元件的第一导电类型的第二半导体区域; 第一导电类型的第三半导体区域; 第一导电类型的第四半导体区域; 第一栅极，并联配置第一转移晶体管; 以及构成第二转移晶体管的第二栅电极。 在半导体衬底的表面的平面图中朝向第一半导体区域的第一栅电极的一侧，第一栅电极朝向第一半导体区域的一侧的长度短于活性物质的长度 区域，并且第一栅电极的朝向第一半导体区域的一侧的长度比第一半导体区域的长度长。