公开(公告)号：US20230215978A1

公开(公告)日：2023-07-06

申请号：US17996284

申请日：2021-04-09

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  UNIVERSITE GRENOBLE ALPES

发明人： Bruno DAUDIN ,  Gwenole JACOPIN ,  Julien PERNOT

IPC分类号： H01L33/32 ,  H01L33/06 ,  H01L33/02 ,  H01L33/00

CPC分类号： H01L33/325 ,  H01L33/06 ,  H01L33/025 ,  H01L33/0075

摘要： A light-emitting diode is provided, including: a first layer of n-doped AlX1Ga(1-X1-Y1)InY1N, with X1>0 and X1+Y1≤1; a second layer of p-doped AlX2Ga(1-X2-Y2)InY2N, with X2>0 and X2+Y2≤1; an active area disposed between the first and the second layers and comprising at least one multi-quantum well emissive structure; nanowires based on AlN p-doped with indium and magnesium atoms, disposed on the second layer; and an ohmic contact layer in contact with the nanowires. A method for producing a light-emitting diode is also provided.

公开(公告)号：US20240304758A1

公开(公告)日：2024-09-12

申请号：US18264606

申请日：2022-02-02

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

发明人： Bruno DAUDIN ,  Gwenole JACOPIN

IPC分类号： H01L33/32 ,  H01L27/15 ,  H01L33/00 ,  H01L33/02

CPC分类号： H01L33/325 ,  H01L27/156 ,  H01L33/0012 ,  H01L33/0075 ,  H01L33/025

摘要： A method for producing a display device comprising several pixels. The production of each pixel includes producing a stack forming p-i-n junctions of semiconductors corresponding to compounds comprising nitrogen and aluminium and/or gallium and/or indium atoms; implanting first, second and third rare earth ions respectively in first, second and third parts of a nest portion, through masks comprising first, second and third openings disposed respectively facing first, second and third regions of the stack respectively forming first, second and third light emission regions.

公开(公告)号：US20230197885A1

公开(公告)日：2023-06-22

申请号：US17996240

申请日：2021-04-13

申请人： CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  UNIVERSITE GRENOBLE ALPES ,  COMMISSARIAT À I'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

发明人： Julien PERNOT ,  Gwenole JACOPIN ,  Bruno DAUDIN

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  H01L33/0093 ,  H01L33/007 ,  H01L33/0012

摘要： The invention relates to a method for manufacturing a transmitter device (10) comprising the steps of:



providing of a substrate (70) made of a semiconductor material having a first face (85) defining the substrate (70) in a direction (N) normal to the first face (85),
implanting, through the first face (85), atoms capable of forming a weakened portion in the substrate, the substrate (70) further comprising a surface portion (92) and an internal portion (95), the weakened portion (90) separating the surface portion (92) from the internal portion (95) in the normal direction (N),
forming, on the first face (85), a light-emitting diode (20),


bonding a face (150) of the diode (20) to a second face (155) of a support (15), and
breaking the weakened portion (90) in order to separate the surface portion (92) from the internal portion (95).

公开(公告)号：US20230231073A1

公开(公告)日：2023-07-20

申请号：US17768385

申请日：2020-10-14

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  C.N.R.S. ,  UNIVERSITÉ GRENOBLE ALPES

发明人： Alexandra-Madalina SILADIE ,  Bruno DAUDIN ,  Gwénolé JACOPIN ,  Julien PERNOT

IPC分类号： H01L33/02 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/24 ,  H01L33/32 ,  H01L33/42

CPC分类号： H01L33/025 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/14 ,  H01L33/145 ,  H01L33/24 ,  H01L33/325 ,  H01L33/42 ,  H01L2933/0016

摘要： A light-emitting diode may include: a first n-doped semiconductor portion; a second p-doped semiconductor portion; an active zone disposed between the first and second portions and including at least one emitting semiconductor portion; a layer that is electrically conductive and optically transparent to at least one wavelength of the UV range configured to be emitted from the emitting portion, the layer being such that the second portion is disposed between the layer and the active zone. The semiconductors of the first portion and of the emitting portion may include compounds including nitrogen atoms as well as atoms of aluminum and/or of gallium. The semiconductor of the second portion may include AlX2Ga(1-X2-Y2)InY2N that is p-doped with magnesium atoms, wherein X2>0, Y2>0, and X2+Y2

公开(公告)号：US20240313150A1

公开(公告)日：2024-09-19

申请号：US18575478

申请日：2022-06-27

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Bruno DAUDIN ,  Bruno GAYRAL

IPC分类号： H01L33/00

CPC分类号： H01L33/0075

摘要： A process for producing light-emitting diodes includes producing a first segment made of inorganic semiconductor doped with a first conductivity type; producing, on a first region of the first segment and through a mask, a first emitting segment made of inorganic semiconductor; moving the mask; producing, on a second region of the first segment, a second emitting segment made of inorganic semiconductor; and producing, at least on the first and second emitting segments, a segment made of inorganic semiconductor doped with a second conductivity type. The chemical compositions of the first and second emitting segments are different from each other and such that their bandgaps are narrower than or equal to those of the segments made of doped inorganic semiconductor.