公开(公告)号：US10381544B2

公开(公告)日：2019-08-13

申请号：US15308819

申请日：2015-05-06

申请人： CTG Advanced Materials, LLC

发明人： Pengdi Han ,  Jian Tian ,  Stephen Dynan ,  Brandon Stone

IPC分类号： C30B11/00 ,  C30B11/08 ,  C30B29/22 ,  C30B35/00 ,  H01L41/18 ,  H01L41/083 ,  H01L41/277

摘要： A system and method provides a piezoelectric stack arrangement for reduced driving voltage while maintaining a driving level for active piezoelectric materials. A stack arrangement of d36 shear mode single crystals of both air X-cut and Y-cut ±1:45° (±20°) arrangement are bonded with discrete conductive pillars to form a shear crystal stack. The bonding area between the neighboring crystal parts is minimized. The bonding pillars are positioned at less than a total surface are of the single crystal forming the stack. The stack fabrication is facilitated with a precision assembly system, where crystal parts are placed to desired locations on an assembly fixture for alignment following the preset operation steps. With the reduced clamping effect from bonding due to lower surface coverage of the discrete conductive pillars, such a piezoelectric d36 shear crystal stack exhibits a reduced driving voltage while maintaining a driving level and substantial and surprisingly improved performance.

公开(公告)号：US09525124B2

公开(公告)日：2016-12-20

申请号：US14019750

申请日：2013-09-06

申请人： CTG ADVANCED MATERIALS, LLC

发明人： Pengdi Han ,  Jian Tian ,  Kevin Meneou ,  Brandon Stone

IPC分类号： G01S7/52 ,  H01L41/332 ,  H01L41/187

CPC分类号： H01L41/183 ,  A61B8/00 ,  A61B8/4483 ,  C01G33/006 ,  C01P2002/50 ,  C01P2004/03 ,  C04B35/491 ,  C04B35/495 ,  C04B35/499 ,  C04B2235/3206 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3234 ,  C04B2235/3236 ,  C04B2235/3249 ,  C04B2235/3255 ,  C04B2235/3286 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/76 ,  C04B2235/768 ,  C04B2235/96 ,  C30B29/30 ,  C30B29/32 ,  G03H3/00 ,  H01L41/18 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/332 ,  H01L41/338 ,  H03H9/02015 ,  Y10T29/42

摘要： The present invention generally relates to high frequency piezoelectric crystal composites, devices, and method for manufacturing the same. In adaptive embodiments an improved imaging device, particularly a medical imaging device or a distance imaging device, for high frequency (>20 MHz) applications involving an imaging transducer assembly is coupled to a signal imagery processor. Additionally, the proposed invention presents a system for photolithography based micro-machined piezoelectric crystal composites and their uses resulting in improved performance parameters.

摘要翻译： 本发明一般涉及高频压电晶体复合材料，器件及其制造方法。 在自适应实施例中，用于涉及成像换能器组件的高频（> 20MHz）应用的改进的成像装置，特别是医学成像装置或距离成像装置被耦合到信号图像处理器。 另外，所提出的发明提出了一种用于基于光刻的微加工压电晶体复合材料的系统及其用途，从而提高了性能参数。

公开(公告)号：US20170186937A1

公开(公告)日：2017-06-29

申请号：US15308819

申请日：2015-05-06

申请人： CTG Advanced Materials, LLC

发明人： Pengdi Han ,  Jian Tian ,  Stephen Dynan ,  Brandon Stone

IPC分类号： H01L41/083 ,  H01L41/047 ,  H01L41/277 ,  H01L41/18 ,  H01L41/09

CPC分类号： H01L41/083 ,  C30B11/001 ,  C30B11/08 ,  C30B29/22 ,  C30B35/00 ,  H01L41/18 ,  H01L41/277 ,  Y10T117/10 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1092

摘要： A system and method provides a piezoelectric stack arrangement for reduced driving voltage while maintaining a driving level for active piezoelectric materials. A stack arrangement of d36 shear mode single crystals of both air X-cut and Y-cut ±1:45° (±20°) arrangement are bonded with discrete conductive pillars to form a shear crystal stack. The bonding area between the neighboring crystal parts is minimized. The bonding pillars are positioned at less than a total surface are of the single crystal forming the stack. The stack fabrication is facilitated with a precision assembly system, where crystal parts are placed to desired locations on an assembly fixture for alignment following the preset operation steps. With the reduced clamping effect from bonding due to lower surface coverage of the discrete conductive pillars, such a piezoelectric d36 shear crystal stack exhibits a reduced driving voltage while maintaining a driving level and substantial and surprisingly improved performance.

公开(公告)号：US09260794B2

公开(公告)日：2016-02-16

申请号：US14266229

申请日：2014-04-30

申请人： CTG ADVANCED MATERIALS, LLC

发明人： Pengdi Han ,  Jian Tian

IPC分类号： C30B11/00 ,  C30B9/00 ,  C30B17/00 ,  C30B21/02 ,  C30B28/06 ,  C30B11/08 ,  C30B35/00 ,  C30B11/02 ,  C30B11/14 ,  C30B29/32

CPC分类号： C30B11/006 ,  C30B11/001 ,  C30B11/002 ,  C30B11/003 ,  C30B11/007 ,  C30B11/02 ,  C30B11/04 ,  C30B11/08 ,  C30B11/14 ,  C30B29/30 ,  C30B29/32 ,  C30B35/00 ,  H01L41/1875 ,  Y10T117/10 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1092

摘要： This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).