公开(公告)号：US20160053381A1

公开(公告)日：2016-02-25

申请号：US14308587

申请日：2014-08-22

Applicant: Cabot Microelectronics Corporation

Inventor： Chih-Pin TSAI ,  Ming-Chih Yeh ,  Glenn Whitener ,  Lung-Tai Lu

IPC: C23F1/16 ,  C23F3/00

CPC classification number: C23F3/06 ,  C09G1/02

Abstract: A method of planarizing/polishing germanium is described. The method comprises the step of abrading the surface of a substrate comprising germanium with an aqueous chemical mechanical polishing (CMP) composition comprising an oxidizing agent, a particulate abrasive, and a germanium etching inhibitor. The germanium etching inhibit is selected from the group consisting of a water-soluble polymer, an amino acid having a non-acidic side chain, a bis-pyridine compound, and a combination of two or more thereof. The polymer can be a cationic or nonionic polymer that comprises basic nitrogen groups, amide groups, or a combination thereof.

Abstract translation: 描述了平面化/抛光锗的方法。 该方法包括用包含氧化剂，颗粒磨料和锗蚀刻抑制剂的水性化学机械抛光（CMP）组合物研磨包含锗的衬底的表面的步骤。 锗蚀刻抑制剂选自水溶性聚合物，具有非酸性侧链的氨基酸，双吡啶化合物及其两种或更多种的组合。 聚合物可以是包含碱性氮基团，酰胺基团或其组合的阳离子或非离子聚合物。

公开(公告)号：US20150368515A1

公开(公告)日：2015-12-24

申请号：US14743583

申请日：2015-06-18

Applicant: Cabot Microelectronics Corporation

Inventor： Lung-Tai Lu ,  Wen-Cheng Liu ,  Jiu-Ching Chen

IPC: C09G1/02 ,  C23F3/03

CPC classification number: C09G1/02 ,  C23F3/02 ,  C23F3/03

Abstract: Chemical-mechanical polishing (CMP) compositions and methods are described, which are suitable for polishing an aluminum surface. The compositions comprise alumina abrasive particles coated with an anionic polymer, and suspended in an acidic or neutral pH carrier. In some cases, a polishing aid such as silica, a carboxylic acid, a phosphonic acid compound, or a combination thereof may be added to the CMP compositions. The described CMP compositions and methods improve polishing efficacy and reduce surface imperfections on a polished aluminum surface compared to CMP methods using uncoated alumina abrasive.

Abstract translation: 描述了适用于抛光铝表面的化学机械抛光（CMP）组合物和方法。 组合物包含涂覆有阴离子聚合物并悬浮在酸性或中性pH载体中的氧化铝磨粒。 在一些情况下，可以向CMP组合物中加入诸如二氧化硅，羧酸，膦酸化合物或其组合的抛光助剂。 与使用未涂覆的氧化铝研磨剂的CMP方法相比，所描述的CMP组合物和方法改善了抛光效率并减少了抛光铝表面的表面缺陷。