公开(公告)号：US20160222254A1

公开(公告)日：2016-08-04

申请号：US14612736

申请日：2015-02-03

Applicant: Cabot Microelectronics Corporation

Inventor： Hung-Tsung HUANG ,  Ming-Chih YEH ,  Chih-Pin TSAI

IPC: C09G1/04 ,  H01L21/3105

CPC classification number: C09G1/04 ,  C09D1/02 ,  C09G1/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) colloidal silica particles that are surface modified with metal ions selected from Mg, Ca, Al, B, Be, and combinations thereof, and wherein the colloidal silica particles have a surface hydroxyl group density of from about 1.5 hydroxyls per nm2 to about 8 hydroxyls per nm2 of a surface area of the particles, (b) an anionic surfactant, (c) a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 7, and wherein the polishing composition is substantially free of an oxidizing agent that oxidizes a metal. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon nitride, silicon oxide, and/or polysilicon.

Abstract translation: 本发明提供了一种化学机械抛光组合物，其包括：（a）用选自Mg，Ca，Al，B，Be及其组合的金属离子进行表面改性的胶体二氧化硅颗粒，其中胶体二氧化硅颗粒具有表面羟基 （b）阴离子表面活性剂，（c）缓冲剂和（d）水，其中抛光组合物具有pH值 约2至约7，并且其中所述抛光组合物基本上不含氧化金属的氧化剂。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氮化硅，氧化硅和/或多晶硅。

公开(公告)号：US20160053381A1

公开(公告)日：2016-02-25

申请号：US14308587

申请日：2014-08-22

Applicant: Cabot Microelectronics Corporation

Inventor： Chih-Pin TSAI ,  Ming-Chih Yeh ,  Glenn Whitener ,  Lung-Tai Lu

IPC: C23F1/16 ,  C23F3/00

CPC classification number: C23F3/06 ,  C09G1/02

Abstract: A method of planarizing/polishing germanium is described. The method comprises the step of abrading the surface of a substrate comprising germanium with an aqueous chemical mechanical polishing (CMP) composition comprising an oxidizing agent, a particulate abrasive, and a germanium etching inhibitor. The germanium etching inhibit is selected from the group consisting of a water-soluble polymer, an amino acid having a non-acidic side chain, a bis-pyridine compound, and a combination of two or more thereof. The polymer can be a cationic or nonionic polymer that comprises basic nitrogen groups, amide groups, or a combination thereof.

Abstract translation: 描述了平面化/抛光锗的方法。 该方法包括用包含氧化剂，颗粒磨料和锗蚀刻抑制剂的水性化学机械抛光（CMP）组合物研磨包含锗的衬底的表面的步骤。 锗蚀刻抑制剂选自水溶性聚合物，具有非酸性侧链的氨基酸，双吡啶化合物及其两种或更多种的组合。 聚合物可以是包含碱性氮基团，酰胺基团或其组合的阳离子或非离子聚合物。