Field effect transistor with p-doped carbon nanotube channel region and method of fabrication

    公开(公告)号:US10424752B2

    公开(公告)日:2019-09-24

    申请号:US15332665

    申请日:2016-10-24

    Applicant: Carbonics Inc.

    Abstract: Electrical device comprising a field effect transistor (FET). The FET includes a substrate with a channel region thereon, the channel region including a film of single-walled carbon nanotubes located on the substrate, metallic source and drain electrodes layers on the channel region and gate structure covering a portion of channel region and located between the metallic source and drain electrode layers. The gate structure includes a gate dielectric layer on the portion of the channel region and a gate electrode layer on the gate dielectric layer. Other non-gate-covered portions of the channel region are located between the source electrode layer and the gate structure and between the drain electrode layer and the gate structure. The FET includes a stoichiometrically oxygen-reduced silicon oxide layer contacting the non-gate-covered portions of the channel region, wherein the stoichiometrically oxygen-reduced silicon oxide composition includes SiOx where x has a value of less than 2.

    Photolithography Based Fabrication of 3D Structures
    2.
    发明申请
    Photolithography Based Fabrication of 3D Structures 有权
    基于光刻的3D结构制作

    公开(公告)号:US20160172596A1

    公开(公告)日:2016-06-16

    申请号:US14572649

    申请日:2014-12-16

    Applicant: Carbonics Inc.

    CPC classification number: H01L51/0023 H01L51/0048 H01L51/055

    Abstract: A method includes depositing a first photoresist layer having a first thickness above a substrate, defining a first opening in the first photoresist layer by exposing the first photoresist layer to radiation, the first opening having a first width. The method includes depositing a conformal passivation layer directly on the first photoresist layer, and depositing a second photoresist layer having a second thickness on the conformal passivation layer. The method includes defining a second opening in the second photoresist layer by exposing the second photoresist layer to radiation, the second opening having a second width greater than the first width, and depositing a metal layer above the first photoresist layer and the substrate to form an electrode, a dielectric layer being provided to contact the metal layer. The method includes removing the first photoresist layer and the second photoresist layer. The first photoresist layer can include a positive photoresist.

    Abstract translation: 一种方法包括在衬底上沉积具有第一厚度的第一光致抗蚀剂层,通过将第一光致抗蚀剂层暴露于辐射来限定第一光致抗蚀剂层中的第一开口,第一开口具有第一宽度。 该方法包括在第一光致抗蚀剂层上直接沉积共形钝化层,以及在保形钝化层上沉积具有第二厚度的第二光致抗蚀剂层。 该方法包括通过将第二光致抗蚀剂层暴露于辐射来限定第二光致抗蚀剂层中的第二开口,第二开口具有大于第一宽度的第二宽度,以及在第一光致抗蚀剂层和基底之上沉积金属层以形成 电极,设置为与金属层接触的介电层。 该方法包括去除第一光致抗蚀剂层和第二光致抗蚀剂层。 第一光致抗蚀剂层可以包括正性光致抗蚀剂。

    Electrical devices having radiofrequency field effect transistors and the manufacture thereof

    公开(公告)号:US11322702B1

    公开(公告)日:2022-05-03

    申请号:US17034933

    申请日:2020-09-28

    Applicant: Carbonics Inc.

    Abstract: Electrical device including a substrate having a surface and a radiofrequency field effect transistor (RF-FET) on the substrate surface. RF-FET includes a CNT layer on the substrate surface, the CNT layer including electrically conductive aligned carbon nanotubes, and pin-down anchor layers on the CNT layer. A first portion of the CNT layer, located in-between the pin-down anchor layers, is not covered by the pin-down anchor layers and is a channel region of the radiofrequency field effect transistor and second portions of the CNT layer are covered by the pin-down anchor layers. For cross-sections in a direction perpendicular to a common alignment direction of the aligned CNTs in the first portion of the CNT layer: the aligned CNTs have an average linear density in a range from 20 to 120 nanotubes per micron along the cross-section, and at least 40 percent of the aligned CNTs are discrete from any CNTs of the CNT layer.

    FIELD EFFECT TRANSISTOR WITH P-DOPED CARBON NANOTUBE CHANNEL REGION AND METHOD OF FABRICATION

    公开(公告)号:US20180114934A1

    公开(公告)日:2018-04-26

    申请号:US15332665

    申请日:2016-10-24

    Applicant: Carbonics Inc.

    Abstract: Electrical device comprising a field effect transistor (FET). The FET includes a substrate with a channel region thereon, the channel region including a film of single-walled carbon nanotubes located on the substrate, metallic source and drain electrodes layers on the channel region and gate structure covering a portion of channel region and located between the metallic source and drain electrode lavers. The gate structure includes a gate dielectric layer on the portion of the channel region and a gate electrode layer on the gate dielectric layer. Other non-gate-covered portions of the channel region are located between the source electrode layer and the gate structure and between the drain electrode layer and the gate structure. The FET includes a stoichiometrically oxygen-reduced silicon oxide layer contacting the non-gate-covered portions of the channel region, wherein the stoichiometrically oxygen-reduced silicon oxide composition includes SiOx where x has a value of less than 2.

    Electrical devices having radiofrequency field effect transistors and the manufacture thereof

    公开(公告)号:US10833284B1

    公开(公告)日:2020-11-10

    申请号:US16431359

    申请日:2019-06-04

    Applicant: Carbonics Inc.

    Abstract: Manufacturing an electrical device including providing a substrate having a surface and forming a radiofrequency field effect transistor on the surface, including forming a CNT layer on the surface and depositing a pin-down layer on the CNT layer. The pin-down layer is patterned to form separate pin-down anchor layers. A first portion of the CNT layer, located in-between the pin-down anchor layers and second portions of the CNT layer are covered by the pin-down anchor layers. For cross-sections in a direction perpendicular to a common alignment direction of the electrically conductive aligned carbon nanotubes in the first portion of the CNT layer the electrically conductive aligned carbon nanotubes have an average linear density in a range from 20 to 120 nanotubes per micron along the cross-sections, and at least 40 percent of the electrically conductive aligned carbon nanotubes are discrete from any carbon nanotubes of the CNT layer. A radiofrequency field effect transistor having such a CNT layer and pin-down anchor layers is also disclosed.

    Photolithography based fabrication of 3D structures
    10.
    发明授权
    Photolithography based fabrication of 3D structures 有权
    基于光刻的3D结构制造

    公开(公告)号:US09379327B1

    公开(公告)日:2016-06-28

    申请号:US14572649

    申请日:2014-12-16

    Applicant: Carbonics Inc.

    CPC classification number: H01L51/0023 H01L51/0048 H01L51/055

    Abstract: A method includes depositing a first photoresist layer having a first thickness above a substrate, defining a first opening in the first photoresist layer by exposing the first photoresist layer to radiation, the first opening having a first width. The method includes depositing a conformal passivation layer directly on the first photoresist layer, and depositing a second photoresist layer having a second thickness on the conformal passivation layer. The method includes defining a second opening in the second photoresist layer by exposing the second photoresist layer to radiation, the second opening having a second width greater than the first width, and depositing a metal layer above the first photoresist layer and the substrate to form an electrode, a dielectric layer being provided to contact the metal layer. The method includes removing the first photoresist layer and the second photoresist layer. The first photoresist layer can include a positive photoresist.

    Abstract translation: 一种方法包括在衬底上沉积具有第一厚度的第一光致抗蚀剂层,通过将第一光致抗蚀剂层暴露于辐射来限定第一光致抗蚀剂层中的第一开口,第一开口具有第一宽度。 该方法包括在第一光致抗蚀剂层上直接沉积共形钝化层,以及在保形钝化层上沉积具有第二厚度的第二光致抗蚀剂层。 该方法包括通过将第二光致抗蚀剂层暴露于辐射来限定第二光致抗蚀剂层中的第二开口,第二开口具有大于第一宽度的第二宽度,以及在第一光致抗蚀剂层和基底之上沉积金属层以形成 电极,设置为与金属层接触的介电层。 该方法包括去除第一光致抗蚀剂层和第二光致抗蚀剂层。 第一光致抗蚀剂层可以包括正性光致抗蚀剂。

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