公开(公告)号：US07307329B2

公开(公告)日：2007-12-11

申请号：US10887244

申请日：2004-07-08

申请人： Cartens Ahrens ,  Ulf Bartl ,  Bernd Eisener ,  Wolfgang Hartung ,  Christian Herzum ,  Raimund Peichl ,  Stefan Pompl ,  Hubert Werthmann

发明人： Cartens Ahrens ,  Ulf Bartl ,  Bernd Eisener ,  Wolfgang Hartung ,  Christian Herzum ,  Raimund Peichl ,  Stefan Pompl ,  Hubert Werthmann

IPC分类号： H01L29/47 ,  H01L21/28

CPC分类号： H01L29/66143 ,  H01L29/417 ,  H01L29/872

摘要： An electronic device includes a substrate, an insulating layer arranged on the substrate, the insulating layer having an opening in an area of the surface of the substrate, an active layer arranged within the opening on the surface of the substrate, the active layer including a guard ring in those areas of the surface and of the active layer which are adjacent to the insulating layer, and a contacting layer arranged on an area of the active layer, the contact layer being adjacent to an area of the guard ring. The device may be produced by a process of three-fold self-alignment, to be precise utilizing a spacer process by means of which a diffusion source having a lateral extension far below the lithography limit is made possible.

摘要翻译： 电子器件包括衬底，布置在衬底上的绝缘层，所述绝缘层在衬底的表面的区域中具有开口，布置在衬底的表面的开口内的有源层，所述活性层包括 保护环在与绝缘层相邻的表面和有源层的那些区域中，以及接触层，布置在有源层的区域上，接触层邻近保护环的区域。 该装置可以通过三重自对准的方法制造，以精确地利用间隔物工艺，通过该间隔工艺，具有远低于光刻极限的横向延伸的扩散源成为可能。

公开(公告)号：US20050035423A1

公开(公告)日：2005-02-17

申请号：US10887244

申请日：2004-07-08

申请人： Cartens Ahrens ,  Ulf Bartl ,  Bernd Eisener ,  Wolfgang Hartung ,  Christian Herzum ,  Raidmund Peichl ,  Stefan Pompl ,  Hubert Werthmann

发明人： Cartens Ahrens ,  Ulf Bartl ,  Bernd Eisener ,  Wolfgang Hartung ,  Christian Herzum ,  Raidmund Peichl ,  Stefan Pompl ,  Hubert Werthmann

IPC分类号： H01L21/329 ,  H01L29/417 ,  H01L29/872 ,  H01L29/47 ,  H01L21/28

CPC分类号： H01L29/66143 ,  H01L29/417 ,  H01L29/872

摘要： An electronic device includes a substrate, an insulating layer arranged on the substrate, the insulating layer having an opening in an area of the surface of the substrate, an active layer arranged within the opening on the surface of the substrate, the active layer including a guard ring in those areas of the surface and of the active layer which are adjacent to the insulating layer, and a contacting layer arranged on an area of the active layer, the contact layer being adjacent to an area of the guard ring. The device may be produced by a process of three-fold self-alignment, to be precise utilizing a spacer process by means of which a diffusion source having a lateral extension far below the lithography limit is made possible.

摘要翻译： 电子器件包括衬底，布置在衬底上的绝缘层，所述绝缘层在衬底的表面的区域中具有开口，布置在衬底的表面的开口内的有源层，所述活性层包括 保护环在与绝缘层相邻的表面和有源层的那些区域中，以及接触层，布置在有源层的区域上，接触层邻近保护环的区域。 该装置可以通过三重自对准的方法制造，以精确地利用间隔物工艺，通过该间隔工艺，具有远低于光刻极限的横向延伸的扩散源成为可能。

公开(公告)号：US06873242B2

公开(公告)日：2005-03-29

申请号：US10797221

申请日：2004-03-10

申请人： Carsten Ahrens ,  Ulf Bartl ,  Wolfgang Hartung ,  Reinhard Losehand ,  Hubert Werthmann

发明人： Carsten Ahrens ,  Ulf Bartl ,  Wolfgang Hartung ,  Reinhard Losehand ,  Hubert Werthmann

IPC分类号： H01F17/00 ,  H01F41/04 ,  H01L23/522 ,  H01L23/64 ,  H01F5/00

CPC分类号： H01F17/0006 ,  H01F17/0013 ,  H01F17/0033 ,  H01F41/042 ,  H01F41/046 ,  H01L23/5227 ,  H01L23/645 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10T428/12465 ,  Y10T428/32 ,  H01L2924/00

摘要： The magnetic component uses at least two different layers of magnetic material for carrying and amplifying the magnetic flux. The use of two different layers which may, however, have the same material composition allows the magnetic conductors to form a magnetic circuit with a locally matched domain alignment. The magnetic component accordingly allows considerable improvements to be achieved in the component parameter, in particular a considerable increase in the Q-factor.

摘要翻译： 磁性部件使用至少两层不同的磁性材料层来承载和放大磁通量。 然而，使用可能具有相同材料组成的两个不同层允许磁导体形成具有局部匹配的畴对准的磁路。 相应地，磁性部件允许在部件参数中实现相当大的改进，特别是Q因子的显着增加。

公开(公告)号：US07030457B2

公开(公告)日：2006-04-18

申请号：US10853740

申请日：2004-05-25

申请人： Carsten Ahrens ,  Angelika Geiselbrechtinger ,  Wolfgang Hartung ,  Christian Herzum ,  Reinhard Losehand

发明人： Carsten Ahrens ,  Angelika Geiselbrechtinger ,  Wolfgang Hartung ,  Christian Herzum ,  Reinhard Losehand

IPC分类号： H01L29/00

CPC分类号： H01L29/66181 ,  H01L29/945

摘要： A capacitor includes a semiconductor substrate in which a trench is formed through which the substrate is doped. A dielectric layer covers the surface of the trench, wherein furthermore an electrically conductive material is arranged in the trench. A first contact structure for contacting the electrically conductive material in the trench in an electrically conductive manner and a second contact structure for contacting the doped semiconductor substrate in an electrically conductive manner are also formed in the capacitor. The capacitor has low series resistance of the electrodes and may be produced in a simple manner.

摘要翻译： 电容器包括其中形成沟槽的半导体衬底，衬底通过该沟槽被掺杂。 电介质层覆盖沟槽的表面，此外，导电材料还设置在沟槽中。 用于以导电方式接触沟槽中的导电材料的第一接触结构和用于以导电方式接触掺杂半导体衬底的第二接触结构也形成在电容器中。 电容器具有低的电极串联电阻，并且可以以简单的方式制造。

公开(公告)号：US20050013090A1

公开(公告)日：2005-01-20

申请号：US10853740

申请日：2004-05-25

申请人： Carsten Ahrens ,  Angelika Geiselbrechtinger ,  Wolfgang Hartung ,  Christian Herzum ,  Reinhard Losehand

发明人： Carsten Ahrens ,  Angelika Geiselbrechtinger ,  Wolfgang Hartung ,  Christian Herzum ,  Reinhard Losehand

IPC分类号： H01L21/334 ,  H01L29/94 ,  H01G4/228

CPC分类号： H01L29/66181 ,  H01L29/945

摘要： A capacitor includes a semiconductor substrate in which a trench is formed through which the substrate is doped. A dielectric layer covers the surface of the trench, wherein furthermore an electrically conductive material is arranged in the trench. A first contact structure for contacting the electrically conductive material in the trench in an electrically conductive manner and a second contact structure for contacting the doped semiconductor substrate in an electrically conductive manner are also formed in the capacitor. The capacitor has low series resistance of the electrodes and may be produced in a simple manner.

摘要翻译： 电容器包括其中形成沟槽的半导体衬底，衬底通过该沟槽被掺杂。 电介质层覆盖沟槽的表面，此外，导电材料还设置在沟槽中。 用于以导电方式接触沟槽中的导电材料的第一接触结构和用于以导电方式接触掺杂半导体衬底的第二接触结构也形成在电容器中。 电容器具有低的电极串联电阻，并且可以以简单的方式制造。

公开(公告)号：US06230061B1

公开(公告)日：2001-05-08

申请号：US09142085

申请日：1999-01-27

申请人： Wolfgang Hartung

发明人： Wolfgang Hartung

IPC分类号： A61N105

CPC分类号： A61N1/056

摘要： An electrode arrangement for stimulating the heart by means of the following elements: an implantable cardiac pacemaker which generates electrical pulses; a first electrode (11) connected to a first output of the pacemaker and mounted on an electrode line (10) fitted intracardially and not attached to the heart wall (i.e., floating); and a second electrode (12) for transmitting the electrical stimulation pulses to the excitable heart tissue, situated on the electrode line away from the first electrode and connected to a second pacemaker output. The voltage pulses at the two electrodes have differing polarities relative to another electrode and the electrodes (11, 12) are arranged on the electrode line in such a way that the electrical dipole field which forms is distorted towards the stimulation point in such a way that a raised potential gradient above the stimulus threshold is formed there.

摘要翻译： 用于通过以下元件刺激心脏的电极装置：产生电脉冲的可植入心脏起搏器; 连接到所述起搏器的第一输出并且安装在心室内并且不附接到所述心脏壁（即，浮动）的电极线（10）上的第一电极（11）; 以及第二电极（12），用于将电刺激脉冲发送到位于离开第一电极并连接到第二起搏器输出的电极线上的可兴奋心脏组织。 两个电极处的电压脉冲相对于另一个电极具有不同的极性，并且电极（11,12）以这样的方式被布置在电极线上，使得形成的电偶极场朝向刺激点变形，使得 在那里形成高于刺激阈值的升高的电位梯度。

公开(公告)号：US07176546B2

公开(公告)日：2007-02-13

申请号：US10865509

申请日：2004-06-10

申请人： Carsten Ahrens ,  Wolfgang Hartung ,  Holger Heuermann ,  Reinhard Losehand ,  Josef-Paul Schaffer

发明人： Carsten Ahrens ,  Wolfgang Hartung ,  Holger Heuermann ,  Reinhard Losehand ,  Josef-Paul Schaffer

IPC分类号： H01L31/075

CPC分类号： H01L29/417 ,  H01L27/0676 ,  H01L29/868

摘要： A diode circuit includes a pin diode structure, wherein the n-semiconductor layer is a buried layer, on which the i-area is deposited by an epitaxy method, and wherein a p-semiconductor layer is introduced into the epitaxy layer. A contacting of the p-semiconductor layer and a contacting of the n-semiconductor layer are arranged on the same main surface of the semiconductor substrate so that an integration with an integrated capacitor, an integrated resistor and/or an integrated inductor is possible.

摘要翻译： 二极管电路包括pin二极管结构，其中n半导体层是掩埋层，其上通过外延法沉积i区，并且其中p半导体层被引入外延层。 p半导体层和n半导体层的接触的接触被布置在半导体衬底的相同主表面上，使得与集成电容器，集成电阻器和/或集成电感器的集成是可能的。

公开(公告)号：US20050040430A1

公开(公告)日：2005-02-24

申请号：US10865509

申请日：2004-06-10

申请人： Carsten Ahrens ,  Wolfgang Hartung ,  Holger Heuermann ,  Reinhard Losehand ,  Josef-Paul Schaffer

发明人： Carsten Ahrens ,  Wolfgang Hartung ,  Holger Heuermann ,  Reinhard Losehand ,  Josef-Paul Schaffer

IPC分类号： H01L27/06 ,  H01L29/417 ,  H01L29/868 ,  H01L31/0328

CPC分类号： H01L29/417 ,  H01L27/0676 ,  H01L29/868

摘要： A diode circuit includes a pin diode structure, wherein the n-semiconductor layer is a buried layer, on which the i-area is deposited by an epitaxy method, and wherein a p-semiconductor layer is introduced into the epitaxy layer. A contacting of the p-semiconductor layer and a contacting of the n-semiconductor layer are arranged on the same main surface of the semiconductor substrate so that an integration with an integrated capacitor, an integrated resistor and/or an integrated inductor is possible.

摘要翻译： 二极管电路包括pin二极管结构，其中n半导体层是掩埋层，其上通过外延法沉积i区，并且其中p半导体层被引入外延层。 p半导体层和n半导体层的接触的接触被布置在半导体衬底的相同主表面上，使得与集成电容器，集成电阻器和/或集成电感器的集成是可能的。

公开(公告)号：US06208901B1

公开(公告)日：2001-03-27

申请号：US09033853

申请日：1998-03-03

申请人： Wolfgang Hartung

发明人： Wolfgang Hartung

IPC分类号： A61N1365

CPC分类号： A61N1/368

摘要： In an apparatus for determining the AV transmission time or AV delay in the heart, the apparatus having a signal-sensor arrangement that is disposed in the heart and detects a natural cardiac action, further having at least one signal output and a processing unit that has at least one signal input that is connected to the signal output of the signal-sensor arrangement for calculating the natural AV transmission time based on the detected cardiac action, the signal-receiver arrangement includes a pressure-sensor arrangement that is disposed in the vicinity of the tricuspid valve in the right atrium and/or in the right ventricle for detecting intracardial pressure changes associated with the opening of the tricuspid valve.

摘要翻译： 在用于确定心脏中的AV传播时间或AV延迟的装置中，该装置具有布置在心脏中并且检测自然心脏动作的信号传感器装置，还具有至少一个信号输出和具有 连接到信号传感器装置的信号输出的至少一个信号输入端，用于基于检测到的心脏动作来计算自然的AV传输时间，信号 - 接收器装置包括压力传感器装置，该压力传感器装置设置在 右心房和/或右心室中的三尖瓣，用于检测与三尖瓣打开相关的心内压力变化。

公开(公告)号：US4485688A

公开(公告)日：1984-12-04

申请号：US472745

申请日：1983-03-07

申请人： Peter Muth ,  Wolfgang Hartung ,  Friedhelm Krake ,  Marion Furche

发明人： Peter Muth ,  Wolfgang Hartung ,  Friedhelm Krake ,  Marion Furche

IPC分类号： F16H59/02 ,  F16H61/26 ,  G05G9/18

CPC分类号： F16H61/26 ,  F16H59/0208 ,  Y10T74/20006 ,  Y10T74/20018

摘要： A decoupling mechanism is provided by incorporating a connecting element into the gearshift linkage disposed between the transmission and gearshift lever. A relatively simple and compact decoupling device is provided for effectively eliminating gear jumping. For this purpose, segmental sleeve portions having internally toothed gear means are axially coupled with the gearshift rod disposed on the side of the gearshift lever, but are adapted for radial inward displacement against the force exerted by springs through cams provided on the tubular casing. Externally toothed gear means are provided on the gearshift rod disposed on the transmission side in the area of the sleeve portions.

摘要翻译： 通过将连接元件结合到设置在变速箱和变速杆之间的变速连杆中来提供解耦机构。 提供了一种相对简单紧凑的解耦装置，用于有效地消除齿轮跳跃。 为此，具有内齿轮装置的节段套筒部分与设置在换档杆侧面上的变速杆轴向联接，但适于径向向内移动，抵抗弹簧通过设置在管状外壳上的凸轮施加的力。 外齿轮装置设置在设置在套筒部分的区域中的变速器侧上的换档杆上。