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19 条记录 (耗时 0.026 秒)

    Electronic device with guard ring
    1.
    发明申请
    Electronic device with guard ring 有权
    带防护环的电子设备

    公开(公告)号：US20050035423A1

    公开(公告)日：2005-02-17

    申请号：US10887244

    申请日：2004-07-08

    申请人： Cartens Ahrens ,  Ulf Bartl ,  Bernd Eisener ,  Wolfgang Hartung ,  Christian Herzum ,  Raidmund Peichl ,  Stefan Pompl ,  Hubert Werthmann

    发明人： Cartens Ahrens ,  Ulf Bartl ,  Bernd Eisener ,  Wolfgang Hartung ,  Christian Herzum ,  Raidmund Peichl ,  Stefan Pompl ,  Hubert Werthmann

    IPC分类号： H01L21/329 ,  H01L29/417 ,  H01L29/872 ,  H01L29/47 ,  H01L21/28

    CPC分类号： H01L29/66143 ,  H01L29/417 ,  H01L29/872

    摘要： An electronic device includes a substrate, an insulating layer arranged on the substrate, the insulating layer having an opening in an area of the surface of the substrate, an active layer arranged within the opening on the surface of the substrate, the active layer including a guard ring in those areas of the surface and of the active layer which are adjacent to the insulating layer, and a contacting layer arranged on an area of the active layer, the contact layer being adjacent to an area of the guard ring. The device may be produced by a process of three-fold self-alignment, to be precise utilizing a spacer process by means of which a diffusion source having a lateral extension far below the lithography limit is made possible.

    摘要翻译： 电子器件包括衬底，布置在衬底上的绝缘层，所述绝缘层在衬底的表面的区域中具有开口，布置在衬底的表面的开口内的有源层，所述活性层包括 保护环在与绝缘层相邻的表面和有源层的那些区域中，以及接触层，布置在有源层的区域上，接触层邻近保护环的区域。 该装置可以通过三重自对准的方法制造，以精确地利用间隔物工艺，通过该间隔工艺，具有远低于光刻极限的横向延伸的扩散源成为可能。

    Electronic device with guard ring
    2.
    发明授权
    Electronic device with guard ring 有权
    带防护环的电子设备

    公开(公告)号：US07307329B2

    公开(公告)日：2007-12-11

    申请号：US10887244

    申请日：2004-07-08

    申请人： Cartens Ahrens ,  Ulf Bartl ,  Bernd Eisener ,  Wolfgang Hartung ,  Christian Herzum ,  Raimund Peichl ,  Stefan Pompl ,  Hubert Werthmann

    发明人： Cartens Ahrens ,  Ulf Bartl ,  Bernd Eisener ,  Wolfgang Hartung ,  Christian Herzum ,  Raimund Peichl ,  Stefan Pompl ,  Hubert Werthmann

    IPC分类号： H01L29/47 ,  H01L21/28

    CPC分类号： H01L29/66143 ,  H01L29/417 ,  H01L29/872

    摘要： An electronic device includes a substrate, an insulating layer arranged on the substrate, the insulating layer having an opening in an area of the surface of the substrate, an active layer arranged within the opening on the surface of the substrate, the active layer including a guard ring in those areas of the surface and of the active layer which are adjacent to the insulating layer, and a contacting layer arranged on an area of the active layer, the contact layer being adjacent to an area of the guard ring. The device may be produced by a process of three-fold self-alignment, to be precise utilizing a spacer process by means of which a diffusion source having a lateral extension far below the lithography limit is made possible.

    摘要翻译： 电子器件包括衬底，布置在衬底上的绝缘层，所述绝缘层在衬底的表面的区域中具有开口，布置在衬底的表面的开口内的有源层，所述活性层包括 保护环在与绝缘层相邻的表面和有源层的那些区域中，以及接触层，布置在有源层的区域上，接触层邻近保护环的区域。 该装置可以通过三重自对准的方法制造，以精确地利用间隔物工艺，通过该间隔工艺，具有远低于光刻极限的横向延伸的扩散源成为可能。

    Capacitor and method for producing a capacitor
    3.
    发明授权
    Capacitor and method for producing a capacitor 有权
    电容器及其制造方法

    公开(公告)号：US07030457B2

    公开(公告)日：2006-04-18

    申请号：US10853740

    申请日：2004-05-25

    申请人： Carsten Ahrens ,  Angelika Geiselbrechtinger ,  Wolfgang Hartung ,  Christian Herzum ,  Reinhard Losehand

    发明人： Carsten Ahrens ,  Angelika Geiselbrechtinger ,  Wolfgang Hartung ,  Christian Herzum ,  Reinhard Losehand

    IPC分类号： H01L29/00

    CPC分类号： H01L29/66181 ,  H01L29/945

    摘要： A capacitor includes a semiconductor substrate in which a trench is formed through which the substrate is doped. A dielectric layer covers the surface of the trench, wherein furthermore an electrically conductive material is arranged in the trench. A first contact structure for contacting the electrically conductive material in the trench in an electrically conductive manner and a second contact structure for contacting the doped semiconductor substrate in an electrically conductive manner are also formed in the capacitor. The capacitor has low series resistance of the electrodes and may be produced in a simple manner.

    摘要翻译： 电容器包括其中形成沟槽的半导体衬底，衬底通过该沟槽被掺杂。 电介质层覆盖沟槽的表面，此外，导电材料还设置在沟槽中。 用于以导电方式接触沟槽中的导电材料的第一接触结构和用于以导电方式接触掺杂半导体衬底的第二接触结构也形成在电容器中。 电容器具有低的电极串联电阻，并且可以以简单的方式制造。

    Capacitor and method for producing a capacitor
    4.
    发明申请
    Capacitor and method for producing a capacitor 有权
    电容器及其制造方法

    公开(公告)号：US20050013090A1

    公开(公告)日：2005-01-20

    申请号：US10853740

    申请日：2004-05-25

    申请人： Carsten Ahrens ,  Angelika Geiselbrechtinger ,  Wolfgang Hartung ,  Christian Herzum ,  Reinhard Losehand

    发明人： Carsten Ahrens ,  Angelika Geiselbrechtinger ,  Wolfgang Hartung ,  Christian Herzum ,  Reinhard Losehand

    IPC分类号： H01L21/334 ,  H01L29/94 ,  H01G4/228

    CPC分类号： H01L29/66181 ,  H01L29/945

    摘要： A capacitor includes a semiconductor substrate in which a trench is formed through which the substrate is doped. A dielectric layer covers the surface of the trench, wherein furthermore an electrically conductive material is arranged in the trench. A first contact structure for contacting the electrically conductive material in the trench in an electrically conductive manner and a second contact structure for contacting the doped semiconductor substrate in an electrically conductive manner are also formed in the capacitor. The capacitor has low series resistance of the electrodes and may be produced in a simple manner.

    摘要翻译： 电容器包括其中形成沟槽的半导体衬底，衬底通过该沟槽被掺杂。 电介质层覆盖沟槽的表面，此外，导电材料还设置在沟槽中。 用于以导电方式接触沟槽中的导电材料的第一接触结构和用于以导电方式接触掺杂半导体衬底的第二接触结构也形成在电容器中。 电容器具有低的电极串联电阻，并且可以以简单的方式制造。

    Overvoltage protection apparatus and an associated protection circuit
    8.
    发明授权
    Overvoltage protection apparatus and an associated protection circuit 有权
    过压保护装置及相关保护电路

    公开(公告)号：US07696591B2

    公开(公告)日：2010-04-13

    申请号：US11828282

    申请日：2007-07-25

    申请人： Michael Schrenk ,  Christian Herzum

    发明人： Michael Schrenk ,  Christian Herzum

    IPC分类号： H01L27/095

    CPC分类号： H01L27/0255 ,  H01L29/861

    摘要： The invention relates to an overvoltage protection apparatus having a semiconductor substrate, a first doping region in order to provide a protection diode, and a second doping region in order to provide a protection resistance, with the second doping region being immediately adjacent to the first doping region.

    摘要翻译： 本发明涉及一种具有半导体衬底的过电压保护装置，为了提供保护二极管的第一掺杂区域和第二掺杂区域以提供保护电阻，第二掺杂区域紧邻第一掺杂 地区。

    Method for generating a structure on a substrate
    9.
    发明授权
    Method for generating a structure on a substrate 有权
    在基板上产生结构的方法

    公开(公告)号：US07262118B2

    公开(公告)日：2007-08-28

    申请号：US11062883

    申请日：2005-02-22

    申请人： Christian Herzum

    发明人： Christian Herzum

    IPC分类号： H01L21/425

    CPC分类号： H01L21/2815

    摘要： The invention relates to a method for generating very short gate structures. In a method for generating a structure on a substrate in accordance with one embodiment of the invention, first of all a layer sequence of a first oxide layer, a first nitride layer and a second oxide layer is disposed onto the substrate. Subsequently, a portion of the second oxide layer and a portion of the first nitride layer is removed in order to expose a portion of the first oxide layer. Then, a part of the first nitride layer above the first oxide layer and below the second oxide layer is removed in order to expose the area of the structure.

    摘要翻译： 本发明涉及一种用于产生非常短的门结构的方法。 在根据本发明的一个实施例的用于在衬底上产生结构的方法中，首先将第一氧化物层，第一氮化物层和第二氧化物层的层序列设置在衬底上。 随后，去除第二氧化物层的一部分和第一氮化物层的一部分，以暴露第一氧化物层的一部分。 然后，除去第一氧化物层之上和第二氧化物层之下的第一氮化物层的一部分以暴露结构的区域。

    Tunable MEMS device and method of making a tunable MEMS device
    10.
    发明授权
    Tunable MEMS device and method of making a tunable MEMS device 有权
    可调谐MEMS器件和制造可调MEMS器件的方法

    公开(公告)号：US08723277B2

    公开(公告)日：2014-05-13

    申请号：US13408928

    申请日：2012-02-29

    申请人： Alfons Dehe ,  Martin Wurzer ,  Christian Herzum ,  Wolfgang Klein ,  Stefan Barzen

    发明人： Alfons Dehe ,  Martin Wurzer ,  Christian Herzum ,  Wolfgang Klein ,  Stefan Barzen

    IPC分类号： H01L29/84

    CPC分类号： B81B3/0086 ,  B81B2201/0257 ,  H04R1/04 ,  H04R19/005 ,  H04R19/04 ,  H04R31/006

    摘要： A tunable MEMS device and a method of manufacturing a tunable MEMS device are disclosed. In accordance with an embodiment of the present invention, a semiconductor device comprises a substrate, a moveable electrode and a counter electrode. The moveable electrode or the counter electrode comprises a first region and a second region, wherein the first region is isolated from the second region, wherein the first region is configured to be tuned, wherein the second region is configured to provide a sensing signal or control a system, and wherein the moveable electrode and the counter electrode are mechanically connected to the substrate.

    摘要翻译： 公开了一种可调谐MEMS器件和制造可调谐MEMS器件的方法。 根据本发明的实施例，半导体器件包括衬底，可移动电极和对电极。 可移动电极或对电极包括第一区域和第二区域，其中第一区域与第二区域隔离，其中第一区域被配置为被调谐，其中第二区域被配置为提供感测信号或控制 系统，并且其中可移动电极和对电极机械地连接到基板。