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    System and method for semiconductor device fabrication using modeling
    1.
    发明授权
    System and method for semiconductor device fabrication using modeling 有权
    使用建模的半导体器件制造的系统和方法

    公开(公告)号：US08359562B2

    公开(公告)日：2013-01-22

    申请号：US13004562

    申请日：2011-01-11

    申请人： Chandrasekhar Sarma ,  Todd C. Bailey

    发明人： Chandrasekhar Sarma ,  Todd C. Bailey

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5068 ,  B33Y80/00 ,  G03F1/70

    摘要： In one embodiment, a method of manufacturing a semiconductor device includes using a processor to generate a first three dimensional (3-D) resist profile for a first process condition using an layout mask of a target structure. The method further includes using a processor to generate a second 3-D resist profile for a second process condition using the layout mask. The first process condition includes a plurality of process variables, and the second process condition includes different values of the plurality of process variables than the first process condition. The method includes generating a 3-D process variable (PV) band profile by combining the first 3-D resist profile with the second 3-D resist profile and displaying a 3-D image of the 3-D PV band profile on a display.

    摘要翻译： 在一个实施例中，制造半导体器件的方法包括使用处理器来使用目标结构的布局掩模来生成用于第一处理条件的第一三维（3-D）抗蚀剂轮廓。 该方法还包括使用处理器使用布局掩模来生成用于第二处理条件的第二3-D抗蚀剂轮廓。 第一处理条件包括多个处理变量，并且第二处理条件包括多于第一处理条件的多个处理变量的不同值。 该方法包括通过组合第一3-D抗蚀剂轮廓和第二3-D抗蚀剂轮廓来产生3-D过程变量（PV）带轮廓，并在显示器上显示3-D PV带轮廓的3-D图像 。

    System and Method for Semiconductor Device Fabrication Using Modeling
    2.
    发明申请
    System and Method for Semiconductor Device Fabrication Using Modeling 有权
    使用建模的半导体器件制造的系统和方法

    公开(公告)号：US20120179282A1

    公开(公告)日：2012-07-12

    申请号：US13004562

    申请日：2011-01-11

    申请人： Chandrasekhar Sarma ,  Todd C. Bailey

    发明人： Chandrasekhar Sarma ,  Todd C. Bailey

    IPC分类号： G06F17/50 ,  G06F19/00

    CPC分类号： G06F17/5068 ,  B33Y80/00 ,  G03F1/70

    摘要： In one embodiment, a method of manufacturing a semiconductor device includes using a processor to generate a first three dimensional (3-D) resist profile for a first process condition using an layout mask of a target structure. The method further includes using a processor to generate a second 3-D resist profile for a second process condition using the layout mask. The first process condition includes a plurality of process variables, and the second process condition includes different values of the plurality of process variables than the first process condition. The method includes generating a 3-D process variable (PV) band profile by combining the first 3-D resist profile with the second 3-D resist profile and displaying a 3-D image of the 3-D PV band profile on a display.

    摘要翻译： 在一个实施例中，制造半导体器件的方法包括使用处理器来使用目标结构的布局掩模来生成用于第一处理条件的第一三维（3-D）抗蚀剂轮廓。 该方法还包括使用处理器使用布局掩模来生成用于第二处理条件的第二3-D抗蚀剂轮廓。 第一处理条件包括多个处理变量，并且第二处理条件包括多于第一处理条件的多个处理变量的不同值。 该方法包括通过组合第一3-D抗蚀剂轮廓与第二3-D抗蚀剂轮廓并在显示器上显示3-D PV带轮廓的3-D图像来产生3-D过程变量（PV） 。

    Stray light feedback for dose control in semiconductor lithography systems
    3.
    发明授权
    Stray light feedback for dose control in semiconductor lithography systems 有权
    杂散光反馈用于半导体光刻系统中的剂量控制

    公开(公告)号：US07583362B2

    公开(公告)日：2009-09-01

    申请号：US10995714

    申请日：2004-11-23

    申请人： Sajan Marokkey ,  Wai-Kin Li ,  Todd C. Bailey

    发明人： Sajan Marokkey ,  Wai-Kin Li ,  Todd C. Bailey

    IPC分类号： G03B27/32

    CPC分类号： G03F7/7085 ,  G03F7/70558 ,  G03F7/70941

    摘要： A stray light feedback system and method for a lithography exposure tool. The stray light feedback helps control critical dimension (CD) within a stray light specification limit. A stray light dose control factor is calculated as a function of the stray light measured in the exposure tool and the sensitivity of the resist. The stray light dose control factor is used to adjust the exposure dose to achieve the desired CD. The stray light may be monitored, and if a threshold level of stray light is reached or exceeded, the use of the exposure tool may be discontinued for a particular type of semiconductor product, resist, or mask level, until the lens system is cleaned.

    摘要翻译： 用于光刻曝光工具的杂散光反馈系统和方法。 杂散光反馈有助于控制杂散光规格限制内的关键尺寸（CD）。 根据曝光工具中测量的杂散光和抗蚀剂的灵敏度计算杂光光剂量控制因子。 杂散光剂量控制因子用于调整曝光剂量以达到所需的CD。 可以监测杂散光，并且如果达到或超过杂散光的阈值水平，则可以针对特定类型的半导体产品，抗蚀剂或掩模级别停止使用曝光工具，直到透镜系统被清洁。

    Pattern Recognition with Edge Correction for Design Based Metrology
    6.
    发明申请
    Pattern Recognition with Edge Correction for Design Based Metrology 失效
    基于设计的计量学边缘校正模式识别

    公开(公告)号：US20120110522A1

    公开(公告)日：2012-05-03

    申请号：US12914154

    申请日：2010-10-28

    申请人： Todd C. Bailey ,  Daniel S. Fischer ,  Dongbing Shao

    发明人： Todd C. Bailey ,  Daniel S. Fischer ,  Dongbing Shao

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5081 ,  G03F7/70508 ,  G03F7/70625 ,  G06F2217/12 ,  Y02P90/265

    摘要： Exemplary embodiments include a method for edge correction in pattern recognition, the method including receiving a design layout, receiving a sample plan based on the design layout, receiving user-generated edge input and generating a recipe output from the design layout, the sample plan and the user-generated edge input. The incorporation of the edge input results in SEM recipes that are much more successful in recognizing patterns that have tendency to deviate in appearance from design by, for example, moderate to severe sidewall angle.

    摘要翻译： 示例性实施例包括用于模式识别中的边缘校正的方法，所述方法包括接收设计布局，基于设计布局接收样本计划，接收用户生成的边缘输入并从设计布局生成配方输出，样本计划和 用户生成的边缘输入。 边缘输入的结合导致SEM配方，其在通过例如中等到严重的侧壁角度识别具有偏离设计倾向的图案方面更成功。

    Device for holding a template for use in imprint lithography
    7.
    发明授权
    Device for holding a template for use in imprint lithography 有权
    用于保存用于压印光刻的模板的装置

    公开(公告)号：US07708542B2

    公开(公告)日：2010-05-04

    申请号：US10747737

    申请日：2003-12-29

    申请人： Todd C. Bailey ,  Byung-Jin Choi ,  Matthew E. Colburn ,  Sidlgata V. Sreenivasan ,  Carlton G. Willson ,  John G. Ekerdt

    发明人： Todd C. Bailey ,  Byung-Jin Choi ,  Matthew E. Colburn ,  Sidlgata V. Sreenivasan ,  Carlton G. Willson ,  John G. Ekerdt

    IPC分类号： B29C59/02

    CPC分类号： G11B5/855 ,  B29C35/0888 ,  B29C37/0053 ,  B29C43/003 ,  B29C2035/0827 ,  B29C2043/025 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F9/00 ,  Y10S977/887

    摘要： Described are imprint lithography templates, methods of forming and using the templates, and a template holder device. An imprint lithography template may include a body with a plurality of recesses on a surface of the body. The body may be of a material that is substantially transparent to activating light. At least a portion of the plurality of recesses may define features having a feature size less than about 250 nm. A template may be formed by obtaining a material that is substantially transparent to activating light and forming a plurality or recesses on a surface of the template. In some embodiments, a template may further include at least one alignment mark. In some embodiments, a template may further include a gap sensing area. An imprint lithography template may be used to form an imprinted layer in a light curable liquid disposed on a substrate. During use, the template may be disposed within a template holder. The template holder may include a body with an opening configured to receive the template, a support plate, and at least one piezo actuator coupled to the body. The piezo actuator may be configured to alter a physical dimension of the template during use.

    摘要翻译： 描述了压印光刻模板，形成和使用模板的方法以及模板保持装置。 压印光刻模板可以包括在主体的表面上具有多个凹部的主体。 身体可以是对于激活光是基本上透明的材料。 多个凹部的至少一部分可以限定具有小于约250nm的特征尺寸的特征。 可以通过获得对于激活光而基本上透明并在模板的表面上形成多个或多个凹陷的材料来形成模板。 在一些实施例中，模板还可以包括至少一个对准标记。 在一些实施例中，模板还可以包括间隙感测区域。 可以使用压印光刻模板来在设置在基板上的可光固化液体中形成印刷层。 在使用期间，模板可以设置在模板保持器内。 模板保持器可以包括具有构造成接收模板的开口的主体，支撑板和耦合到主体的至少一个压电致动器。 压电致动器可以被配置为在使用期间改变模板的物理尺寸。

    Mask forming and implanting methods using implant stopping layer and mask so formed
    8.
    发明授权
    Mask forming and implanting methods using implant stopping layer and mask so formed 失效
    使用植入物停止层和掩​​模形成的掩模形成和植入方法

    公开(公告)号：US07651947B2

    公开(公告)日：2010-01-26

    申请号：US11420321

    申请日：2006-05-25

    申请人： Katherina Babich ,  Todd C. Bailey ,  Richard A. Conti ,  Ryan P. Deschner

    发明人： Katherina Babich ,  Todd C. Bailey ,  Richard A. Conti ,  Ryan P. Deschner

    IPC分类号： H01L21/302

    CPC分类号： H01L21/266 ,  H01L21/26513 ,  Y10T428/24992

    摘要： Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: depositing an implant stopping layer over the substrate; depositing a photoresist over the implant stopping layer, the implant stopping layer having a density greater than the photoresist; forming a pattern in the photoresist by removing a portion of the photoresist to expose the implant stopping layer; and transferring the pattern into the implant stopping layer by etching to form the mask. The implant stopping layer may include: hydrogenated germanium carbide, nitrogenated germanium carbide, fluorinated germanium carbide, and/or amorphous germanium carbon hydride (GeHX), where X includes carbon. The methods/mask reduce scattering during implanting because the mask has higher density than conventional masks.

    摘要翻译： 形成用于植入衬底的掩模和使用具有光刻胶的注入阻挡层进行植入的方法提供了较低的纵横比掩模，其在去除掩模期间对衬底中的沟槽隔离造成最小的损害。 在一个实施例中，形成掩模的方法包括：在衬底上沉积注入阻挡层; 在所述注入阻挡层上沉积光致抗蚀剂，所述注入阻挡层的密度大于所述光致抗蚀剂; 通过去除光致抗蚀剂的一部分以暴露植入物停止层，在光致抗蚀剂中形成图案; 并通过蚀刻将图案转移到植入物停止层中以形成掩模。 注入停止层可以包括：氢化碳化锗，氮化碳化锗，氟化锗碳化物和/或无定形锗碳氢化物（GeHX），其中X包括碳。 方法/掩模减少了植入过程中的散射，因为掩模具有比常规掩模更高的密度。

    Pattern recognition with edge correction for design based metrology
    9.
    发明授权
    Pattern recognition with edge correction for design based metrology 失效
    基于设计的计量学边缘校正的模式识别

    公开(公告)号：US08429570B2

    公开(公告)日：2013-04-23

    申请号：US12914154

    申请日：2010-10-28

    申请人： Todd C. Bailey ,  Daniel S. Fischer ,  Dongbing Shao

    发明人： Todd C. Bailey ,  Daniel S. Fischer ,  Dongbing Shao

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5081 ,  G03F7/70508 ,  G03F7/70625 ,  G06F2217/12 ,  Y02P90/265

    摘要： Exemplary embodiments include a method for edge correction in pattern recognition, the method including receiving a design layout, receiving a sample plan based on the design layout, receiving user-generated edge input and generating a recipe output from the design layout, the sample plan and the user-generated edge input. The incorporation of the edge input results in SEM recipes that are much more successful in recognizing patterns that have tendency to deviate in appearance from design by, for example, moderate to severe sidewall angle.

    摘要翻译： 示例性实施例包括用于模式识别中的边缘校正的方法，所述方法包括接收设计布局，基于设计布局接收样本计划，接收用户生成的边缘输入并从设计布局生成配方输出，样本计划和 用户生成的边缘输入。 边缘输入的结合导致SEM配方，其在通过例如中等到严重的侧壁角度识别具有偏离设计倾向的图案方面更成功。