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    Device for holding a template for use in imprint lithography
    1.
    发明授权
    Device for holding a template for use in imprint lithography 有权
    用于保存用于压印光刻的模板的装置

    公开(公告)号：US07708542B2

    公开(公告)日：2010-05-04

    申请号：US10747737

    申请日：2003-12-29

    申请人： Todd C. Bailey ,  Byung-Jin Choi ,  Matthew E. Colburn ,  Sidlgata V. Sreenivasan ,  Carlton G. Willson ,  John G. Ekerdt

    发明人： Todd C. Bailey ,  Byung-Jin Choi ,  Matthew E. Colburn ,  Sidlgata V. Sreenivasan ,  Carlton G. Willson ,  John G. Ekerdt

    IPC分类号： B29C59/02

    CPC分类号： G11B5/855 ,  B29C35/0888 ,  B29C37/0053 ,  B29C43/003 ,  B29C2035/0827 ,  B29C2043/025 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F9/00 ,  Y10S977/887

    摘要： Described are imprint lithography templates, methods of forming and using the templates, and a template holder device. An imprint lithography template may include a body with a plurality of recesses on a surface of the body. The body may be of a material that is substantially transparent to activating light. At least a portion of the plurality of recesses may define features having a feature size less than about 250 nm. A template may be formed by obtaining a material that is substantially transparent to activating light and forming a plurality or recesses on a surface of the template. In some embodiments, a template may further include at least one alignment mark. In some embodiments, a template may further include a gap sensing area. An imprint lithography template may be used to form an imprinted layer in a light curable liquid disposed on a substrate. During use, the template may be disposed within a template holder. The template holder may include a body with an opening configured to receive the template, a support plate, and at least one piezo actuator coupled to the body. The piezo actuator may be configured to alter a physical dimension of the template during use.

    摘要翻译： 描述了压印光刻模板，形成和使用模板的方法以及模板保持装置。 压印光刻模板可以包括在主体的表面上具有多个凹部的主体。 身体可以是对于激活光是基本上透明的材料。 多个凹部的至少一部分可以限定具有小于约250nm的特征尺寸的特征。 可以通过获得对于激活光而基本上透明并在模板的表面上形成多个或多个凹陷的材料来形成模板。 在一些实施例中，模板还可以包括至少一个对准标记。 在一些实施例中，模板还可以包括间隙感测区域。 可以使用压印光刻模板来在设置在基板上的可光固化液体中形成印刷层。 在使用期间，模板可以设置在模板保持器内。 模板保持器可以包括具有构造成接收模板的开口的主体，支撑板和耦合到主体的至少一个压电致动器。 压电致动器可以被配置为在使用期间改变模板的物理尺寸。

    Method for reducing tip-to-tip spacing between lines
    8.
    发明授权
    Method for reducing tip-to-tip spacing between lines 有权
    减少线间距尖端间距的方法

    公开(公告)号：US08361704B2

    公开(公告)日：2013-01-29

    申请号：US12352051

    申请日：2009-01-12

    申请人： Matthew E. Colburn ,  Wai-kin Li ,  Haining S. Yang

    发明人： Matthew E. Colburn ,  Wai-kin Li ,  Haining S. Yang

    IPC分类号： G03F7/20

    CPC分类号： G03F7/40 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139

    摘要： This invention provides a method for reducing tip-to-tip spacing between lines using a combination of photolithographic and copolymer self-assembling lithographic techniques. A mask layer is first formed over a substrate with a line structure. A trench opening of a width d is created in the mask layer. A layer of a self-assembling block copolymer is then applied over the mask layer. The block copolymer layer is annealed to form a single unit polymer block of a width or a diameter w which is smaller than d inside the trench opening. The single unit polymer block is selectively removed to form a single opening of a width or a diameter w inside the trench opening. An etch transfer process is performed using the single opening as a mask to form an opening in the line structure in the substrate.

    摘要翻译： 本发明提供了使用光刻和共聚物自组装光刻技术的组合来减少线之间的尖端到尖端间隔的方法。 首先在具有线结构的衬底上形成掩模层。 在掩模层中形成宽度为d的沟槽开口。 然后将一层自组装嵌段共聚物施加在掩模层上。 对嵌段共聚物层进行退火以在沟槽开口内形成宽度或直径w小于d的单一单元聚合物嵌段。 选择性地去除单个单元聚合物嵌段以在沟槽开口内形成宽度或直径w的单个开口。 使用单个开口作为掩模进行蚀刻转印处理，以在基板中的线结构中形成开口。

    Chemical trim of photoresist lines by means of a tuned overcoat
    9.
    发明授权
    Chemical trim of photoresist lines by means of a tuned overcoat 有权
    通过调整的外涂层对光致抗蚀剂线进行化学修饰

    公开(公告)号：US08137893B2

    公开(公告)日：2012-03-20

    申请号：US12983297

    申请日：2011-01-01

    申请人： Sean David Burns ,  Matthew E. Colburn ,  Steven John Holmes ,  Wu-Song Huang

    发明人： Sean David Burns ,  Matthew E. Colburn ,  Steven John Holmes ,  Wu-Song Huang

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/40

    CPC分类号： G03F7/40 ,  Y10T428/24802

    摘要： A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line. The invention also comprises a product produced by this process.

    摘要翻译： 新的光刻工艺包括在保持光刻工艺窗口的同时降低图像的线宽，并且使用该工艺来制造包括nm阶（例如约22nm）的节点半导体器件的间距分裂结构。 该方法包括在基片的表面上施加平版印刷抗蚀剂层，并对平版印刷抗蚀剂层进行图形化和显影，以形成具有初始线宽的nm阶节点图像。 用酸性聚合物覆盖nm阶节点图像产生酸性聚合物涂层图像。 加热酸性聚合物涂覆的图像给图像上的热处理涂层，加热在足以将初始线宽降低到随后变窄的线宽的温度和时间内进行。 显影加热处理的涂层将其从图像中去除，从而在基底上产生独立的修整光刻特征。 可选地，重复前述步骤进一步减小了变窄线的线宽。 本发明还包括通过该方法生产的产品。