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1.发明申请公开(公告)号：US20100258053A1
公开(公告)日：2010-10-14
申请号：US12747969
申请日：2008-12-05
申请人： Chantal Arena , Christiaan J. Werkhoven , Ronald Thomas Bertram, JR. , Ed Lindow , Dennis L. Goodwin
发明人： Chantal Arena , Christiaan J. Werkhoven , Ronald Thomas Bertram, JR. , Ed Lindow , Dennis L. Goodwin
IPC分类号： C23C16/00 , C23C16/458 , C23C16/46 , C23C16/455
CPC分类号： C30B25/14 , C23C16/4557 , C23C16/45574 , C23C16/45578 , Y10T137/8593
摘要： This invention provides gas injector apparatus that extends into a growth chamber in order to provide more accurate delivery of thermalized precursor gases. The improved injector can distribute heated precursor gases into a growth chamber in flows that spatially separated from each other up until they impinge of a growth substrate and that have volumes adequate for high volume manufacture. Importantly, the improved injector is sized and configured so that it can fit into existing commercial growth chamber without hindering the operation of mechanical and robot substrate handling equipment used with such chambers. This invention is useful for the high volume growth of numerous elemental and compound semiconductors, and particularly useful for the high volume growth of Group III-V compounds and GaN.
摘要翻译： 本发明提供了气体注射器装置，其延伸到生长室中，以便提供更精确的热化前体气体的输送。 改进的注射器可以将加热的前体气体分配到在空间上彼此分离的流中的生长室中，直到它们撞击生长衬底并且具有足以用于高体积制造的体积。 重要的是，改进的喷射器的尺寸和构造使得其可以适应现有的商业生长室，而不会妨碍与这种室一起使用的机械和机器人基板处理设备的操作。 本发明对于许多元素和化合物半导体的高体积生长是有用的，并且特别适用于III-V族化合物和GaN的高体积生长。
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2.发明授权公开(公告)号：US09175419B2
公开(公告)日：2015-11-03
申请号：US12747969
申请日：2008-12-05
申请人： Chantal Arena , Christiaan J. Werkhoven , Ronald Thomas Bertram, Jr. , Ed Lindow , Dennis L. Goodwin
发明人： Chantal Arena , Christiaan J. Werkhoven , Ronald Thomas Bertram, Jr. , Ed Lindow , Dennis L. Goodwin
IPC分类号： C23C16/00 , C30B25/14 , C23C16/455
CPC分类号： C30B25/14 , C23C16/4557 , C23C16/45574 , C23C16/45578 , Y10T137/8593
摘要： This invention provides gas injector apparatus that extends into a growth chamber in order to provide more accurate delivery of thermalized precursor gases. The improved injector can distribute heated precursor gases into a growth chamber in flows that are spatially separated from each other up until they impinge on a growth substrate and that have volumes adequate for high-volume manufacture. Importantly, the improved injector is sized and configured so that it can fit into existing commercial growth chambers without hindering the operation of mechanical and robot substrate-handling equipment used with such chambers. This invention is useful for the high-volume growth of numerous elemental and compound semiconductors, and particularly useful for the high-volume growth of Group III-V compounds and GaN.
摘要翻译： 本发明提供了气体注射器装置，其延伸到生长室中，以便提供更精确的热化前体气体的输送。 改进的注射器可以将加热的前体气体分配到在空间上彼此分离的流中的生长室中，直到它们撞击到生长衬底上并且具有足以用于大批量制造的体积。 重要的是，改进的喷射器的尺寸和构造使得其可以适应现有的商业生长室，而不会妨碍与这种室一起使用的机械和机器人基板处理设备的操作。 本发明对于许多元素和化合物半导体的高容量生长是有用的，并且特别适用于III-V族化合物和GaN的大量生长。
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公开(公告)号：US06554905B1
公开(公告)日：2003-04-29
申请号：US09550680
申请日：2000-04-17
申请人： Dennis L. Goodwin
发明人： Dennis L. Goodwin
IPC分类号： H01L21000
CPC分类号： H01L21/67115 , Y10T29/41
摘要： A reactor for processing semiconductor wafers and the like is provided. The reactor employs one or more rotating components to more evenly distribute temperature or gases within the chamber. In one embodiment, the reactor is provided with rotating reflectors, which reflect the heat generated from radiant heat lamps onto a stationary wafer in a reaction chamber. The rotation of the reflectors provides for a more uniform temperature distribution on the wafer. In another embodiment, the reaction chamber itself is rotated while the wafer is kept stationary. In another embodiment, a rotating showerhead is provided above the wafer through which gases flow to deposit onto the wafer in a uniform manner.
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公开(公告)号：US06293749B1
公开(公告)日：2001-09-25
申请号：US09193991
申请日：1998-11-17
申请人： Ivo Raaijmakers , Loren R. Jacobs , Michael W. Halpin , James A. Alexander , Ken O'Neill , Dennis L. Goodwin
发明人： Ivo Raaijmakers , Loren R. Jacobs , Michael W. Halpin , James A. Alexander , Ken O'Neill , Dennis L. Goodwin
IPC分类号： B65G4907
CPC分类号： H01L21/68785 , H01L21/68707 , Y10S294/902 , Y10S414/141
摘要： A system for facilitating wafer transfer comprises a susceptor unit consisting of an inner susceptor section which rests within an outer susceptor section. A vertically movable and rotatable support spider located beneath the susceptor unit can rotate into positions to engage either the inner or the outer susceptor sections. When the inner section is engaged, the support spider lifts the inner section vertically out of the outer section. When the outer section is engaged, the support spider raises and lowers the entire susceptor unit. A robotic arm end effector engaging only the lower surface of the outer edge of the wafer permits hot wafer pick-up and unloading by the inner susceptor section. Several end effectors are disclosed that minimize non-uniform thermal effect on the substrate.
摘要翻译： 一种用于促进晶片转印的系统包括一个基座单元，该基座单元由一个搁置在一个外部感受器部分内的内部感受器部分组成。 位于基座单元下方的可垂直移动和可旋转的支撑星形轮可以旋转到与内部或外部基座部分接合的位置。 当内部部分接合时，支撑蜘蛛将内部部分垂直地提升出外部部分。 当外部部分接合时，支撑架蜘蛛提升并降低整个基座单元。 仅接合晶片的外边缘的下表面的机械手臂端部执行器允许内部感受器部分的热晶片拾取和卸载。 公开了使基板上的不均匀热效应最小化的几个端部执行器。
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公开(公告)号：US5020475A
公开(公告)日：1991-06-04
申请号：US315723
申请日：1989-02-24
摘要： A substrate loading subsystem receives substrates from an external source and delivers them to an input port. A substrate pickup transports the substrates serially from the input port to a delivery port of a processing subsystem wherein the substrates are subjected to a reactant gas in a reaction chamber. After completion of the chemical vapor deposition, the substrate pick up serially transports the substrates to an outlet port wherefrom they are off loaded.
摘要翻译： 衬底加载子系统从外部源接收衬底并将其传送到输入端口。 基板拾取器将基板从输入端口顺序地输送到处理子系统的输送端口，其中基板在反应室中经受反应气体。 在化学气相沉积完成之后，衬底拾取器将衬底串联地输送到出口端口，在那里它们被卸载。
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公开(公告)号：US5997588A
公开(公告)日：1999-12-07
申请号：US729550
申请日：1996-10-11
IPC分类号： H01L21/00 , H01L21/677 , H01L21/68 , B65G49/07
CPC分类号： H01L21/67126 , F16K51/02 , H01L21/67742 , H01L21/67748 , Y10S414/139 , Y10S414/141 , Y10S438/908 , Y10S438/941 , Y10T29/41
摘要： A gas curtain for use with a semiconductor processing system to prevent unwanted gases from entering a processing chamber. The gas curtain includes both upward and downward flows of gas surrounding an isolation valve adjacent a delivery port into the processing chamber. In the valve open position, the downward flows extends between the valve and the delivery port, and the upward flow extends in an opposite direction behind the isolation valve. In the valve closed position, one of the flows extends through a slot in the isolation valve, while the other flow is directed in an opposite direction on the rear side of the isolation valve. In a method of using the gas curtain apparatus, a pick-up wand operating on a Bernoulli principal uses gases which are unwanted in the processing chamber, and just prior to loading wafers into the processing chamber, the gas flow in the Bernoulli wand is switched from a first gas to a second gas. Desirably, the second gas is hydrogen. The Bernoulli wand passes through the gas curtain before entering the processing chamber to remove any fugitive particles, moisture and unwanted gases. An exhaust located proximate to an input/output chamber creates a continuous pressure gradient in the handling chamber toward the input/output chamber further helping to prevent unwanted gases from entering the processing chamber.
摘要翻译： 一种与半导体处理系统一起使用以防止不需要的气体进入处理室的气幕。 气幕包括邻近进入处理室的输送口的隔离阀周围的向上和向下的气体流。 在阀打开位置，向下的流动在阀和输送口之间延伸，并且向上的流沿隔离阀的相反方向延伸。 在阀关闭位置，其中一个流动延伸通过隔离阀中的槽，而另一个流在隔离阀的后侧上以相反的方向被引导。 在使用气幕装置的方法中，在伯努利主体上操作的拾取棒使用在处理室中不需要的气体，并且在将晶片装入处理室之前，在伯努利棒中的气流被切换 从第一气体到第二气体。 期望地，第二气体是氢气。 伯努利魔杖在进入处理室之前通过气帘，以除去任何流淌的颗粒，水分和不需要的气体。 位于输入/输出室附近的废气在处理室中朝向输入/输出室产生连续的压力梯度，进一步有助于防止不需要的气体进入处理室。
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公开(公告)号：US5080549A
公开(公告)日：1992-01-14
申请号：US547463
申请日：1990-07-02
IPC分类号： B25J9/10 , B25J15/06 , H01L21/683
CPC分类号： B25J15/0616 , B25J9/107 , H01L21/6838 , Y10S414/139 , Y10S414/141
摘要： Wafer handling apparatus operating under the Bernoulli principle to pick up, transport and deposit wafers, which apparatus includes a plate having a plurality of laterally oriented outlets and a central outlet for discharging gas in a pattern sufficient to develop a low pressure enviroment to pick up the wafer while bathing the wafer in radially outflowing gases to prevent intrusion and deposition on the wafer of particulate matter in suspension.
摘要翻译： 在伯努利原理下操作的晶片处理设备用于拾取，运输和沉积晶片，该装置包括具有多个横向定向的出口的板，以及用于以足以形成低压环境的气体排出气体的中心出口 同时将晶片浸泡在径向流出的气体中，以防止在悬浮液中颗粒物质的晶片上的侵入和沉积。
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公开(公告)号：US5435682A
公开(公告)日：1995-07-25
申请号：US255114
申请日：1994-06-07
申请人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Wiebe B. deBoer , Albert E. Ozias
发明人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Wiebe B. deBoer , Albert E. Ozias
CPC分类号： C30B29/06 , C30B25/10 , Y10S414/135 , Y10S414/137 , Y10S414/139
摘要： This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-systems for placement of substrates to be processed into the system and subsequent extraction without contamination of the system. A special substrate handling sub-system is provided for moving the substrates to and from at least one processing sub-system without physically contacting the planar surfaces of the substrates. The processing sub-system includes a horizontal gas flow reaction chamber having a rotatable susceptor therein for rotating the single substrate supportable thereon about an axis that is normal to the center of the substrate for averaging of the temperature and reactant gas concentration variables. The processing sub-system is separated from the handling sub-system by a special isolation valve and a gas injection device is used to inject the gas into the reaction chamber with a predetermined velocity profile. A special temperature sensing arrangement is provided in the processing sub-system for controlling a radiant heating sub-system which is provided above and below the reaction chamber.
摘要翻译： 本发明公开了一种用于将由反应气体承载的各种材料化学沉积到用于制造半导体器件的衬底上的系统。 该系统包括特殊的装载和卸载子系统，用于将要处理的基板放置到系统中，随后提取而不会污染系统。 提供了一种特殊的基板处理子系统，用于将基板移动到至少一个处理子系统并且从至少一个处理子系统移动，而不物理地接触基板的平面表面。 处理子系统包括水平气流反应室，其中具有可旋转的基座，用于使可支撑在其上的单个基板绕垂直于基板中心的轴线旋转，以平均温度和反应气体浓度变量。 处理子系统通过特殊隔离阀与处理子系统分离，并且气体注入装置用于以预定的速度分布将气体注入反应室。 在处理子系统中设置有用于控制设置在反应室上方和下方的辐射加热子系统的特殊温度检测装置。
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公开(公告)号：US5156521A
公开(公告)日：1992-10-20
申请号：US720750
申请日：1991-06-25
摘要： A method for loading a substrate into a receiving chamber upon a positionable platform, which platform is in sealed relationship with the receiving chamber, permits purging of the receiving chamber prior to transport of the loaded substrate(s) to a feed chamber. The platform is positioned from the receiving chamber into the feed chamber to off load the substrates. A cassette containing a plurality of stacked substrates may be loaded upon the platform to transport a plurality of substrates into the feed chamber.
摘要翻译： 一种将基板装载到接收室中的方法，所述定位平台与所述接收室处于密封关系中，所述定位平台允许在将所加载的基板运送到进料室之前清洗所述接收室。 平台从接收室定位到进料室中以卸载基板。 可以将包含多个堆叠的基板的盒子装载到平台上以将多个基板输送到进料室中。
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公开(公告)号：US5092728A
公开(公告)日：1992-03-03
申请号：US315332
申请日：1989-02-24
申请人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Wiebe B. deBoer , Albert E. Ozias
发明人： Richard Crabb , McDonald Robinson , Mark R. Hawkins , Dennis L. Goodwin , Armand P. Ferro , Wiebe B. deBoer , Albert E. Ozias
摘要： Each substrate is loaded into a receiving chamber upon a positionable platform, which platform is in sealed relationship with the receiving chamber to permit purging of the receiving chamber prior to transport of the loaded substrate(s) to a feed chamber. The platform is positioned from the receiving chamber into the feed chamber wherefrom the substrates are off loaded. A cassette containing a plurality of stacked substrates may be loaded upon the platform to transport a plurality of substrates into the feed chamber.
摘要翻译： 每个基板在可定位的平台上被装载到接收室中，该平台与接收室处于密封关系，以便在将所加载的基底运送到进料室之前清洗接收室。 平台从接收室定位到进料室中，从而将基板卸载。 可以将包含多个堆叠的基板的盒子装载到平台上以将多个基板输送到进料室中。
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