公开(公告)号：US20100258053A1

公开(公告)日：2010-10-14

申请号：US12747969

申请日：2008-12-05

申请人： Chantal Arena ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, JR. ,  Ed Lindow ,  Dennis L. Goodwin

发明人： Chantal Arena ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, JR. ,  Ed Lindow ,  Dennis L. Goodwin

IPC分类号： C23C16/00 ,  C23C16/458 ,  C23C16/46 ,  C23C16/455

CPC分类号： C30B25/14 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  Y10T137/8593

摘要： This invention provides gas injector apparatus that extends into a growth chamber in order to provide more accurate delivery of thermalized precursor gases. The improved injector can distribute heated precursor gases into a growth chamber in flows that spatially separated from each other up until they impinge of a growth substrate and that have volumes adequate for high volume manufacture. Importantly, the improved injector is sized and configured so that it can fit into existing commercial growth chamber without hindering the operation of mechanical and robot substrate handling equipment used with such chambers. This invention is useful for the high volume growth of numerous elemental and compound semiconductors, and particularly useful for the high volume growth of Group III-V compounds and GaN.

摘要翻译： 本发明提供了气体注射器装置，其延伸到生长室中，以便提供更精确的热化前体气体的输送。 改进的注射器可以将加热的前体气体分配到在空间上彼此分离的流中的生长室中，直到它们撞击生长衬底并且具有足以用于高体积制造的体积。 重要的是，改进的喷射器的尺寸和构造使得其可以适应现有的商业生长室，而不会妨碍与这种室一起使用的机械和机器人基板处理设备的操作。 本发明对于许多元素和化合物半导体的高体积生长是有用的，并且特别适用于III-V族化合物和GaN的高体积生长。

公开(公告)号：US20090214785A1

公开(公告)日：2009-08-27

申请号：US12261796

申请日：2008-10-30

申请人： Chantal Arena ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, JR. ,  Ed Lindow

发明人： Chantal Arena ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, JR. ,  Ed Lindow

IPC分类号： C23C16/44 ,  C23C16/54

CPC分类号： H01L21/0262 ,  C23C16/303 ,  C23C16/448 ,  C30B25/105

摘要： The present invention relates to the field of semiconductor processing and provides apparatus and methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the invention comprises heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention comprises radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases.

摘要翻译： 本发明涉及半导体处理领域，并提供通过在其反应之前促进前体气体的更有效的热化来改善半导体材料的化学气相沉积（CVD）的装置和方法。 在优选的实施方案中，本发明包括传热结构及其在CVD反应器内的排列，以促进对流动的工艺气体的热传递。 在适用于对来自加热灯的辐射透明的CVD反应器的某些优选实施方案中，本发明包括放射吸收表面，用于拦截来自加热灯的辐射并将其转移到流动的工艺气体。

公开(公告)号：US20130052806A1

公开(公告)日：2013-02-28

申请号：US13591718

申请日：2012-08-22

申请人： Ronald Thomas Bertram, JR. ,  Christiaan J. Werkhoven ,  Chantal Arena ,  Ed Lindow

发明人： Ronald Thomas Bertram, JR. ,  Christiaan J. Werkhoven ,  Chantal Arena ,  Ed Lindow

IPC分类号： C23C16/458 ,  B23P11/00 ,  H01L21/20

CPC分类号： C30B25/14 ,  C23C16/303 ,  C23C16/45504 ,  C23C16/4557 ,  C23C16/54 ,  C30B29/40 ,  C30B29/406 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/0262 ,  Y10T137/0402

摘要： Deposition systems include a reaction chamber, and a substrate support structure disposed at least partially within the reaction chamber. The systems further include at least one gas injection device and at least one vacuum device, which together are used to flow process gases through the reaction chamber. The systems also include at least one access gate through which a workpiece substrate may be loaded into the reaction chamber and unloaded out from the reaction chamber. The at least one access gate is located remote from the gas injection device. Methods of depositing semiconductor material may be performed using such deposition systems. Methods of fabricating such deposition systems may include coupling an access gate to a reaction chamber at a location remote from a gas injection device.

摘要翻译： 沉积系统包括反应室和至少部分地设置在反应室内的基板支撑结构。 该系统还包括至少一个气体注入装置和至少一个真空装置，它们一起用于使工艺气体流过反应室。 该系统还包括至少一个进入门，工件基底可通过该入口门装载到反应室中并从反应室中卸载。 至少一个进入门位于远离气体注入装置的位置。 可以使用这种沉积系统进行半导体材料的沉积方法。 制造这种沉积系统的方法可以包括在远离气体注入装置的位置处将进入门连接到反应室。

公开(公告)号：US20100180913A1

公开(公告)日：2010-07-22

申请号：US12602740

申请日：2008-12-05

申请人： Chantal Arena ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, JR. ,  Andrew D. Johnson ,  Vasil Vorsa ,  Robert Gordon Ridgeway ,  Peter J. Maroulis

发明人： Chantal Arena ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, JR. ,  Andrew D. Johnson ,  Vasil Vorsa ,  Robert Gordon Ridgeway ,  Peter J. Maroulis

IPC分类号： C23G1/00 ,  B05C11/00

CPC分类号： C23C16/4405 ,  C23C16/52 ,  C23C16/54

摘要： The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and apparatus for in-situ removal of undesired deposits in the interiors of reactor chambers, for example, on chamber walls and elsewhere. The invention provides methods according to which cleaning steps are integrated and incorporated into a high-throughput growth process. Preferably, the times when growth should be suspended and cleaning commenced and when cleaning should be terminated and growth resumed are automatically determined based on sensor inputs. The invention also provides reactor chamber systems for the efficient performance of the integrated cleaning/growth methods of this invention.

摘要翻译： 本发明涉及半导体加工设备和方法的领域，并且特别地提供了用于在反应器室的内部例如在室壁和其它地方原位去除不想要的沉积物的方法和装置。 本发明提供了一种方法，根据该方法，清洁步骤被整合并结合到高通量生长过程中。 优选地，基于传感器输入自动确定生长应该停止和清洁开始的时间，并且清洁应当终止并且恢复生长。 本发明还提供了用于有效执行本发明的综合清洁/生长方法的反应器室系统。

公开(公告)号：US20090098343A1

公开(公告)日：2009-04-16

申请号：US12180418

申请日：2008-07-25

申请人： Chantal ARENA ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, JR. ,  Ed Lidow ,  Subhash Mahajan ,  Ranjan Datta ,  Rahul Ajay Trivedi ,  Ilsu Han

发明人： Chantal ARENA ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, JR. ,  Ed Lidow ,  Subhash Mahajan ,  Ranjan Datta ,  Rahul Ajay Trivedi ,  Ilsu Han

IPC分类号： H01L21/20 ,  B32B3/10

CPC分类号： H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/02647

摘要： This invention provides methods for fabricating substantially continuous layers of a group III nitride semiconductor material having low defect densities and optionally having a selected crystal polarity. The methods include epitaxial growth nucleating and/or seeding on the upper portions of a plurality of pillars/islands of a group III nitride material that are irregularly arranged on a template structure. The upper portions of the islands have low defect densities and optionally have a selected crystal polarity. The invention also includes template structures having a substantially continuous layer of a masking material through which emerge upper portions of the pillars/islands. The invention also includes such template structures. The invention can be applied to a wide range of semiconductor materials, both elemental semiconductors, e.g., combinations of Si (silicon) with strained Si (sSi) and/or Ge (germanium), and compound semiconductors, e.g., group II-VI and group III-V compound semiconductor materials.

摘要翻译： 本发明提供了用于制造具有低缺陷密度且任选地具有所选晶体极性的III族氮化物半导体材料的基本上连续的层的方法。 所述方法包括在不规则地布置在模板结构上的III族氮化物材料的多个柱/岛的上部上的外延生长成核和/或接种。 岛的上部具有低缺陷密度，并且可选地具有选定的晶体极性。 本发明还包括具有基本连续的掩模材料层的模板结构，通过该掩模材料出现柱/岛的上部。 本发明还包括这样的模板结构。 本发明可以应用于宽范围的半导体材料，包括元素半导体，例如Si（硅）与应变Si（sSi）和/或Ge（锗）的组合，以及化合物半导体，例如II-VI族和 III-V族化合物半导体材料。

公开(公告)号：US20140217553A1

公开(公告)日：2014-08-07

申请号：US13989004

申请日：2011-11-23

申请人： Chantal Arena ,  Ronald Thomas Bertram, JR. ,  Ed Lindow ,  Subhash Mahajan ,  Ilsu Han

发明人： Chantal Arena ,  Ronald Thomas Bertram, JR. ,  Ed Lindow ,  Subhash Mahajan ,  Ilsu Han

IPC分类号： H01L21/02 ,  H01L29/06

CPC分类号： H01L29/0665 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02667

摘要： Methods of depositing III-nitride semiconductor materials on substrates include depositing a layer of III-nitride semiconductor material on a surface of a substrate in a nucleation HVPE process stage to form a nucleation layer having a microstructure comprising at least some amorphous III-nitride semiconductor material. The nucleation layer may be annealed to form crystalline islands of epitaxial nucleation material on the surface of the substrate. The islands of epitaxial nucleation material may be grown and coalesced in a coalescence HVPE process stage to form a nucleation template layer of the epitaxial nucleation material. The nucleation template layer may at least substantially cover the surface of the substrate. Additional III-nitride semiconductor material may be deposited over the nucleation template layer of the epitaxial nucleation material in an additional HVPE process stage. Final and intermediate structures comprising III-nitride semiconductor material are formed by such methods.

摘要翻译： 在衬底上沉积III族氮化物半导体材料的方法包括在成核HVPE工艺阶段中在衬底的表面上沉积III族氮化物半导体材料层，以形成具有包含至少一些非晶III族氮化物半导体材料的微结构的成核层 。 成核层可以退火以在衬底的表面上形成外延成核材料的晶体岛。 外延成核材料岛可以在聚结HVPE工艺阶段中生长和聚结，以形成外延成核材料的成核模板层。 成核模板层可以至少基本上覆盖基材的表面。 另外的III族氮化物半导体材料可以在另外的HVPE工艺阶段中沉积在外延成核材料的成核模板层上。 通过这种方法形成包含III族氮化物半导体材料的最终和中间结构。

公开(公告)号：US20130234157A1

公开(公告)日：2013-09-12

申请号：US13988996

申请日：2011-11-23

申请人： Chantal Arena ,  Ronald Thomas Bertram, JR. ,  Ed Lindow ,  Subhash Mahajan ,  Fanyu Meng

发明人： Chantal Arena ,  Ronald Thomas Bertram, JR. ,  Ed Lindow ,  Subhash Mahajan ,  Fanyu Meng

IPC分类号： H01L21/02 ,  H01L29/20

CPC分类号： H01L21/02104 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L29/2003

摘要： Embodiments of the invention include methods for forming Group III-nitride semiconductor structure using a halide vapor phase epitaxy (HVPE) process. The methods include forming a continuous Group III-nitride nucleation layer on a surface of a non-native growth substrate, the continuous Group III-nitride nucleation layer concealing the upper surface of the non-native growth substrate. Forming the continuous Group III-nitride nucleation layer may include forming a Group III-nitride layer and thermally treating said Group III-nitride layer. Methods may further include forming a further Group III-nitride layer upon the continuous Group III-nitride nucleation layer.

摘要翻译： 本发明的实施方案包括使用卤化物气相外延（HVPE）方法形成III族氮化物半导体结构的方法。 所述方法包括在非天然生长衬底的表面上形成连续的III族氮化物成核层，所述连续III族氮化物成核层隐藏非天然生长衬底的上表面。 形成连续的III族氮化物成核层可以包括形成III族氮化物层并热处理所述III族氮化物层。 方法还可以包括在连续的III族氮化物成核层上形成另外的III族氮化物层。

公开(公告)号：US20110305835A1

公开(公告)日：2011-12-15

申请号：US12814936

申请日：2010-06-14

申请人： Ronald Thomas Bertram, JR. ,  Chantal Arena ,  Ed Lindow

发明人： Ronald Thomas Bertram, JR. ,  Chantal Arena ,  Ed Lindow

IPC分类号： C23C16/458 ,  C23C16/44 ,  C23C16/00

CPC分类号： C23C16/4584 ,  C23C16/45568 ,  C23C16/45587 ,  C23C16/45589

摘要： Systems and methods for the gas treatment of one or more substrates include at least two gas injectors in a reaction chamber, one of which may be movable. The systems may also include a substrate support structure for holding one or more substrates disposed within the reaction chamber. The movable gas injector may be disposed between the substrate support structure and another gas injector. The gas injectors may be configured to discharge different process gasses therefrom. The substrate support structure may be rotatable around an axis of rotation.

摘要翻译： 用于气体处理一个或多个基底的系统和方法包括反应室中的至少两个气体注入器，其中一个可以是可移动的。 该系统还可以包括用于保持设置在反应室内的一个或多个衬底的衬底支撑结构。 可移动气体注入器可以设置在基板支撑结构和另一个气体注入器之间。 气体喷射器可以被配置为从其排出不同的过程气体。 衬底支撑结构可以围绕旋转轴线旋转。

公开(公告)号：US20110277681A1

公开(公告)日：2011-11-17

申请号：US13145290

申请日：2010-02-17

申请人： Chantal Arena ,  Ronald Thomas Bertram, JR. ,  Ed Lindow

发明人： Chantal Arena ,  Ronald Thomas Bertram, JR. ,  Ed Lindow

IPC分类号： C30B23/06 ,  F16K49/00 ,  C23C16/34

CPC分类号： C23C16/34 ,  C23C16/45548 ,  C23C16/4557 ,  C23C16/45574 ,  C30B25/14 ,  C30B29/403 ,  Y10T137/6416

摘要： The present invention provides improved gas injectors for use with chemical vapour deposition (CVD) systems that thermalize gases prior to injection into a CVD chamber. The provided injectors are configured to increase gas flow times through heated zones and include gas-conducting conduits that lengthen gas residency times in the heated zones. The provided injectors also have outlet ports sized, shaped, and arranged to inject gases in selected flow patterns. The invention also provides CVD systems using the provided thermalizing gas injectors. The present invention has particular application to high volume manufacturing of GaN substrates.

摘要翻译： 本发明提供了用于化学气相沉积（CVD）系统的改进的气体注入器，其在注入CVD腔室之前对气体进行热化。 所提供的喷射器构造成通过加热区增加气流时间，并且包括延长加热区中的气体驻留时间的导气导管。 所提供的注射器还具有尺寸，形状和布置成以选定的流动模式注入气体的出口端口。 本发明还提供了使用所提供的热化气体喷射器的CVD系统。 本发明特别适用于大量制造GaN衬底。

公开(公告)号：US20120083100A1

公开(公告)日：2012-04-05

申请号：US12894724

申请日：2010-09-30

申请人： Ronald Thomas Bertram, JR.

发明人： Ronald Thomas Bertram, JR.

IPC分类号： H01L21/20 ,  C23C16/448

CPC分类号： H01L21/0262 ,  C23C16/301 ,  C23C16/303 ,  C23C16/4488 ,  C23C16/452 ,  C30B25/14 ,  C30B29/403

摘要： Methods of depositing material on a substrate include forming a precursor gas and a byproduct from a source gas within a thermalizing gas injector. The byproduct may be reacted with a liquid reagent to form additional precursor gas, which may be injected from the thermalizing gas injector into a reaction chamber. Thermalizing gas injectors for injecting gas into a reaction chamber of a deposition system may include an inlet, a thermalizing conduit, a liquid container configured to hold a liquid reagent therein, and an outlet. A pathway may extend from the inlet, through the thermalizing conduit to an interior space within the liquid container, and from the interior space within the liquid container to the outlet. The thermalizing conduit may have a length that is greater than a shortest distance between the inlet and the liquid container. Deposition systems may include one or more such thermalizing gas injectors.

摘要翻译： 在衬底上沉积材料的方法包括从热化气体注入器内的源气体形成前体气体和副产物。 副产物可以与液体试剂反应以形成额外的前体气体，其可以从热化气体注入器注入反应室。 用于将气体注入沉积系统的反应室的热化气体注入器可以包括入口，热化管道，配置成将液体试剂保持在其中的液体容器和出口。 通道可以从入口，通过热化管道延伸到液体容器内的内部空间，以及从液体容器内的内部空间延伸到出口。 热化导管的长度可以大于入口和液体容器之间的最短距离。 沉积系统可以包括一个或多个这样的热化气体注入器。