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11 条记录 (耗时 0.013 秒)

    Method & apparatus for formation of oriented magnetic films for magnetic recording media
    1.
    发明申请
    Method & apparatus for formation of oriented magnetic films for magnetic recording media 有权
    用于形成用于磁记录介质的取向磁性膜的方法和装置

    公开(公告)号：US20060272937A1

    公开(公告)日：2006-12-07

    申请号：US11142478

    申请日：2005-06-02

    申请人： Paul McLeod ,  Charles Brucker ,  Jeffrey Reiter

    发明人： Paul McLeod ,  Charles Brucker ,  Jeffrey Reiter

    IPC分类号： C23C14/00

    CPC分类号： C23C14/568 ,  G11B5/656 ,  G11B5/667 ,  G11B5/85 ,  G11B5/852

    摘要： A method of forming a layer of a magnetic material with radially oriented magnetic anisotropy, comprising sequential steps of providing a circular, annular disk-shaped substrate having an inner diameter and an outer diameter, forming a layer of a magnetic material with non-radially oriented magnetic anisotropy over at least one surface of the substrate, and re-orienting the magnetic anisotropy in a radial direction. Preferably, the re-orientation is performed magnetically and the radially oriented layer serves as a magnetically soft underlayer (SUL) of a magnetic recording medium. Also disclosed is a multi-chamber apparatus for performing the disclosed process.

    摘要翻译： 一种形成具有径向取向的磁各向异性的磁性材料层的方法，包括提供具有内径和外径的圆形环形盘形基底的顺序步骤，形成具有非径向定向的磁性材料层 在基板的至少一个表面上的磁各向异性，并且在径向方向上重新定向磁各向异性。 优选地，重新取向是磁性地进行的，并且径向取向层用作磁记录介质的磁软底层（SUL）。 还公开了用于执行所公开的处理的多室装置。

    Rapid cycle time gas burster
    4.
    发明申请
    Rapid cycle time gas burster 有权
    快速循环时间气喘

    公开(公告)号：US20050082161A1

    公开(公告)日：2005-04-21

    申请号：US10689057

    申请日：2003-10-21

    申请人： Charles Brucker

    发明人： Charles Brucker

    IPC分类号： C23C14/00 ,  C23C14/32

    CPC分类号： C23C14/0073

    摘要： An apparatus for rapidly establishing at least one preselected gas pressure in a process chamber comprising: (a) a chamber defining an interior space adapted to be maintained at a reduced pressure; and (b) a gas supply means for supplying at least one burst of gas to the chamber for rapidly establishing the at least one preselected gas pressure in the chamber, the gas supply means including: (i) a source of the gas; (ii) a supply ballast fluidly connected to the gas source for receiving the gas from the source; (iii) at least one burst ballast fluidly connected to the supply ballast via a metering valve for receiving the gas from the supply ballast; and (iv) an on/off valve fluidly connected to the at least one burst ballast and the chamber for supplying the process chamber with the gas from the at least one burst ballast.

    摘要翻译： 一种用于在处理室中快速建立至少一个预选气体压力的装置，包括：（a）限定适于保持在减压下的内部空间的室; 和（b）气体供应装置，用于向所述室供应至少一个气体，用于在所述室中快速建立所述至少一个预选气体压力，所述气体供应装置包括：（i）所述气体源; （ii）流体连接到气源的用于从源接收气体的供应镇流器; （iii）经由计量阀流体地连接到所述电源镇流器的至少一个爆破镇流器，用于接收来自所述电源镇流器的气体; 以及（iv）流体连接到所述至少一个爆破式镇流器和所述室的开/关阀，用于向所述处理室提供来自所述至少一个爆发式镇流器的气体。

    Multilayer perpendicular media with high-boron or high-carbon additives to CoCr films
    6.
    发明授权
    Multilayer perpendicular media with high-boron or high-carbon additives to CoCr films 有权
    多层垂直介质与高硼或高碳添加剂CoCr膜

    公开(公告)号：US07323259B2

    公开(公告)日：2008-01-29

    申请号：US10402772

    申请日：2003-03-28

    申请人： Qixu Chen ,  Charles Brucker ,  Rajiv Yadav Ranjan

    发明人： Qixu Chen ,  Charles Brucker ,  Rajiv Yadav Ranjan

    IPC分类号： G11B5/66 ,  G11B5/70

    CPC分类号： G11B5/667 ,  G11B5/656 ,  G11B5/66 ,  G11B5/7325 ,  Y10T428/265

    摘要： Carbon or boron is added into the CoCr layers of a multiplayer perpendicular magnetic media structure to reduce media noise. The perpendicular magnetic media structure has sharp interfaces between Co-alloy layers and Pd or Pt layers and significantly reduced exchange coupling. In accordance with one embodiment of the invention, the perpendicular magnetic media structure with carbon or boron additives is 700 Å FeCo30.8B12/20 Å TaOx/700 Å FeCo30.8B12/20 Å TaOx/700 Å FeCo30.8B12/20 Å TaOx/158 Å FeCo30.8B12/17 Å Ta/49 Å ITO/33 Å CoCr37Ru10/2.5 Å COy/2.5 Å C/[(CoCr9)C6.8/Pd]19/50 Å CHN. [(CoCr9)C6.8/Pd]19 means 19 layers of the bi-layer stack (CoCr9)C6.8/Pd. TaOx stands for surface-oxidized Ta and COy stands for C oxides. ITO stands for Indium Tin Oxide and consists of In2O3 and Sn2O5 at 80 and 20 molecular percent respectively. CHN refers to hydrogenated and nitrogenated carbon.

    摘要翻译： 将碳或硼添加到多玩家垂直磁性介质结构的CoCr层中以降低介质噪声。 垂直磁介质结构在Co合金层和Pd或Pt层之间具有明显的界面，并显着降低了交换耦合。 根据本发明的一个实施方案，具有碳或硼添加剂的垂直磁性介质结构是700埃，30.8×12/20埃， 30/100FeCo 30.8 B 12/20Åx xÅÅÅÅÅÅÅÅÅÅÅÅÅÅÅÅÅÅÅÅB B B B B B B B B B B B > 12/20ÅTaO x / 158ÅFeCo 30.8 B 12/17Å/ 49ITO / 33Å CoCr / / / / / / / /（（C）Cr C > 6.8 / Pd] 19/50埃。 [（CoCr 9）C 6.8 / Pd] 19表示19层双层堆叠（CoCr 9 / / SUB >）C 6.8 / Pd。 TaO x代表表面氧化的Ta，CO 2代表C氧化物。 ITO代表氧化铟锡，由80和20组成的In 2 N 2 O 3和Sn 2 O 5 O 5组成。 分子百分比。 CHN是指氢化和氮化的碳。

    Method for sputtering magnetic recording media
    7.
    发明申请
    Method for sputtering magnetic recording media 失效
    溅射磁记录介质的方法

    公开(公告)号：US20050136290A1

    公开(公告)日：2005-06-23

    申请号：US10741549

    申请日：2003-12-19

    申请人： Charles Brucker ,  Jean Lee

    发明人： Charles Brucker ,  Jean Lee

    IPC分类号： B05D1/12 ,  B05D5/12 ,  C23C14/04 ,  C23C14/14 ,  C23C14/22 ,  G11B5/64 ,  G11B5/73

    CPC分类号： C23C14/225 ,  C23C14/044 ,  C23C14/14 ,  G11B5/64 ,  G11B5/656 ,  G11B5/7325

    摘要： Generally, methods and apparatus are disclosed for fabrication of angle-of-incidence layers on a substrate. In one embodiment, the angle-of-incidence layers may have either radial or circumferential tilt symmetry, using, for example, sputtering or evaporation techniques. In one example, an apparatus for sputtering material comprises a substrate support member, a cathode positioned in substantially facing relationship with respect to the substrate support member and a shutter plate. The shutter plate is disposed between the substrate support member and the cathode and defining an aperture for selective transmission of sputtered articles from the cathode on the basis of a non-perpendicular trajectory angle relative to a plane of the substrate support member.

    摘要翻译： 通常，公开了用于在衬底上制造入射角层的方法和装置。 在一个实施例中，使用例如溅射或蒸发技术，入射角层可以具有径向或周向倾斜对称。 在一个示例中，用于溅射材料的设备包括基板支撑构件，相对于基板支撑构件基本上面对关系的阴极和快门板。 快门板设置在基板支撑构件和阴极之间，并且基于相对于基板支撑构件的平面的非垂直轨迹角度限定用于从阴极选择性地透射溅射制品的孔。

    Anti-ferromagnetically coupled soft underlayer
    8.
    发明申请
    Anti-ferromagnetically coupled soft underlayer 有权
    反铁磁耦合软底层

    公开(公告)号：US20070065681A1

    公开(公告)日：2007-03-22

    申请号：US11231797

    申请日：2005-09-22

    申请人： Erol Girt ,  Charles Brucker ,  Alexander Dobin

    发明人： Erol Girt ,  Charles Brucker ,  Alexander Dobin

    IPC分类号： G11B5/66

    CPC分类号： G11B5/667 ,  G11B5/653 ,  G11B5/66

    摘要： A magnetic recording medium having a first magnetic layer, a spacer layer, and a second magnetic layer, in this order, wherein the spacer layer includes a non-magnetic layer and a thickness of the spacer layer is selected to establish anti-ferromagnetic coupling between the first magnetic layer and the second magnetic layer, and a thickness of both the first and second magnetic layers are less than a critical thickness for formation of stripe domains in the magnetic layers is disclosed.

    摘要翻译： 一种具有第一磁性层，间隔层和第二磁性层的磁记录介质，其中间隔层包括非磁性层，并且选择间隔层的厚度以建立反铁磁耦合 公开了第一磁性层和第二磁性层以及第一和第二磁性层的厚度都小于在磁性层中形成条状畴的临界厚度。

    Thin film structure with decreased C-axis distribution
    9.
    发明申请
    Thin film structure with decreased C-axis distribution 审中-公开
    具有减小的C轴分布的薄膜结构

    公开(公告)号：US20070059564A1

    公开(公告)日：2007-03-15

    申请号：US11226634

    申请日：2005-09-14

    申请人： Timothy Klemmer ,  Charles Brucker ,  Kalman Pelhos

    发明人： Timothy Klemmer ,  Charles Brucker ,  Kalman Pelhos

    IPC分类号： G11B5/64 ,  B32B3/28 ,  G11B5/706

    CPC分类号： G11B5/7325 ,  G11B5/65 ,  Y10T428/24355 ,  Y10T428/24479 ,  Y10T428/24537 ,  Y10T428/24545 ,  Y10T428/2457 ,  Y10T428/32

    摘要： A thin film structure in the form of, for example, a magnetic recording medium having a deceased C-axis distribution is provided. The structure includes a substrate having a first surface and a second surface non-parallel to the first surface, a seed layer overlying the first surface and the second surface of the substrate and a magnetic material layer on the seed layer. The magnetic material layer has a C-axis tilted with respect to an axis perpendicular to the magnetic material layer, i.e., a surface normal of the magnetic material layer. The seed layer has a columnar structure oriented generally perpendicular to either the first surface or the second surface of the substrate. The columnar structure of the seed layer acts as a template to epitaxial growth.

    摘要翻译： 提供了例如具有已故C轴分布的磁记录介质形式的薄膜结构。 该结构包括具有第一表面和不平行于第一表面的第二表面的衬底，覆盖衬底的第一表面和第二表面的种子层和种子层上的磁性材料层。 磁性材料层具有相对于垂直于磁性材料层的轴倾斜的C轴，即磁性材料层的表面法线。 种子层具有大致垂直于衬底的第一表面或第二表面定向的柱状结构。 种子层的柱状结构作为外延生长的模板。

    Gas injection for uniform composition reactively sputter-deposited thin films
    10.
    发明申请
    Gas injection for uniform composition reactively sputter-deposited thin films 有权
    用于均匀组成的气体注入反应溅射沉积的薄膜

    公开(公告)号：US20050072664A1

    公开(公告)日：2005-04-07

    申请号：US10676105

    申请日：2003-10-02

    申请人： Charles Brucker ,  Paul McLeod ,  Chang Yi

    发明人： Charles Brucker ,  Paul McLeod ,  Chang Yi

    IPC分类号： C23C14/00 ,  C23C14/32 ,  C23C14/34

    CPC分类号： H01J37/3244 ,  C23C14/0063 ,  C23C14/3464

    摘要： A method of forming a thin film on a substrate/workpiece by sputtering, comprising steps of: (a) providing an apparatus comprising a vacuum chamber including at least one sputtering source and a gas supply means for injecting a gas containing at least one reactive component into said chamber, the gas supply means comprising a plurality of differently-sized outlet orifices adapted for providing substantially the same flow rate of gas from each orifice; (b) providing a substrate/workpiece having at least one surface for formation of a thin film thereon; (c) generating a sputtered particle flux from the at least one sputtering source; (d) injecting the gas containing the at least one reactive component into the chamber via the gas supply means, such that the same gas flow rate is provided at each orifice; and (e) forming a reactively sputtered thin film on the at least one surface of the substrate/workpiece, the reactively sputtered thin film having a substantially uniform content of the at least one reactive component.

    摘要翻译： 一种通过溅射在衬底/工件上形成薄膜的方法，包括以下步骤：（a）提供一种包括真空室的设备，该真空室包括至少一个溅射源和气体供应装置，用于将含有至少一个反应组分 所述气体供应装置包括多个不同尺寸的出口孔口，其适于提供与每个孔口基本相同的气体流量; （b）提供具有至少一个用于在其上形成薄膜的表面的基底/工件; （c）从所述至少一个溅射源产生溅射的粒子通量; （d）经由气体供给装置将含有至少一个反应性组分的气体注入室中，使得在每个孔口处设置相同的气体流量; 和（e）在所述衬底/工件的所述至少一个表面上形成反应溅射的薄膜，所述反应溅射的薄膜具有至少一个反应组分的基本上均匀的含量。