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公开(公告)号：US08232559B2
公开(公告)日：2012-07-31
申请号：US13018252
申请日：2011-01-31
申请人： Charles West , John Carlisle , James Netzel , Ian Wylie , Neil Kane
发明人： Charles West , John Carlisle , James Netzel , Ian Wylie , Neil Kane
IPC分类号： H01L29/15
CPC分类号： H01L29/1602 , B81C1/0015 , H01L21/02527 , H01L21/02595 , H01L21/30625 , H01L21/3105
摘要： A method comprising: providing at least one first diamond film comprising polycrystalline diamond, e.g., nanocrystalline or ultrananocrystalline diamond, disposed on a substrate, wherein the first diamond film comprises a surface comprising diamond asperities and having a first diamond film thickness, removing asperities from the first diamond film to form a second diamond film having a second diamond film thickness, wherein the second thickness is either substantially the same as the first thickness, or the second thickness is about 100 nm or less thinner than the first diamond film thickness, optionally patterning the second diamond film to expose substrate regions and, optionally, depositing semiconductor material on the exposed substrate regions, and depositing a solid layer on the second diamond film to form a first layered structure. Applications include for example dielectric isolation in the semiconductor industry, as well as surface acoustic wave devices, scanning probe microscope, and atomic force microscope devices.
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公开(公告)号：US20110186942A1
公开(公告)日：2011-08-04
申请号：US13018252
申请日：2011-01-31
申请人： Charles West , John Carlisle , James Netzel , Ian Wylie , Neil Kane
发明人： Charles West , John Carlisle , James Netzel , Ian Wylie , Neil Kane
CPC分类号： H01L29/1602 , B81C1/0015 , H01L21/02527 , H01L21/02595 , H01L21/30625 , H01L21/3105
摘要： A method comprising: providing at least one first diamond film comprising polycrystalline diamond, e.g., nanocrystalline or ultrananocrystalline diamond, disposed on a substrate, wherein the first diamond film comprises a surface comprising diamond asperities and having a first diamond film thickness, removing asperities from the first diamond film to form a second diamond film having a second diamond film thickness, wherein the second thickness is either substantially the same as the first thickness, or the second thickness is about 100 nm or less thinner than the first diamond film thickness, optionally patterning the second diamond film to expose substrate regions and, optionally, depositing semiconductor material on the exposed substrate regions, and depositing a solid layer on the second diamond film to form a first layered structure. Applications include for example dielectric isolation in the semiconductor industry, as well as surface acoustic wave devices, scanning probe microscope, and atomic force microscope devices.
摘要翻译： 一种方法，包括：提供至少一个第一金刚石膜，其包括设置在基底上的多晶金刚石，例如纳米晶体或超微晶金刚石，其中所述第一金刚石膜包括包含金刚石凹凸并具有第一金刚石膜厚度的表面， 第一金刚石膜以形成具有第二金刚石膜厚度的第二金刚石膜，其中所述第二厚度或者与所述第一厚度基本相同，或者所述第二厚度比所述第一金刚石膜厚度薄约100nm或更薄， 所述第二金刚石膜暴露衬底区域和任选地在所述暴露的衬底区域上沉积半导体材料，以及在所述第二金刚石膜上沉积固体层以形成第一层状结构。 应用包括例如半导体工业中的介电隔离以及表面声波器件，扫描探针显微镜和原子力显微镜器件。
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公开(公告)号：US08227350B2
公开(公告)日：2012-07-24
申请号：US12348240
申请日：2009-01-02
申请人： Charles West , John Carlisle , James Netzel , Ian Wylie , Neil Kane
发明人： Charles West , John Carlisle , James Netzel , Ian Wylie , Neil Kane
IPC分类号： H01L21/304
CPC分类号： H01L29/1602 , B81C1/0015 , H01L21/02527 , H01L21/02595 , H01L21/30625 , H01L21/3105
摘要： A method comprising: providing at least one first diamond film comprising polycrystalline diamond, e.g., nanocrystalline or ultrananocrystalline diamond, disposed on a substrate, wherein the first diamond film comprises a surface comprising diamond asperities and having a first diamond film thickness, removing asperities from the first diamond film to form a second diamond film having a second diamond film thickness, wherein the second thickness is either substantially the same as the first thickness, or the second thickness is about 100 nm or less thinner than the first diamond film thickness, optionally patterning the second diamond film to expose substrate regions and, optionally, depositing semiconductor material on the exposed substrate regions, and depositing a solid layer on the second diamond film to form a first layered structure. Applications include for example dielectric isolation in the semiconductor industry, as well as surface acoustic wave devices, scanning probe microscope, and atomic force microscope devices.
摘要翻译： 一种方法，包括：提供至少一个第一金刚石膜，其包括设置在基底上的多晶金刚石，例如纳米晶体或超微晶金刚石，其中所述第一金刚石膜包括包含金刚石凹凸并具有第一金刚石膜厚度的表面， 第一金刚石膜以形成具有第二金刚石膜厚度的第二金刚石膜，其中所述第二厚度或者与所述第一厚度基本相同，或者所述第二厚度比所述第一金刚石膜厚度薄约100nm或更薄， 所述第二金刚石膜暴露衬底区域和任选地在所述暴露的衬底区域上沉积半导体材料，以及在所述第二金刚石膜上沉积固体层以形成第一层状结构。 应用包括例如半导体工业中的介电隔离以及表面声波器件，扫描探针显微镜和原子力显微镜器件。
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公开(公告)号：US20090173950A1
公开(公告)日：2009-07-09
申请号：US12348240
申请日：2009-01-02
申请人： Charles West , John Carlisle , James Netzel , Ian Wylie , Neil Kane
发明人： Charles West , John Carlisle , James Netzel , Ian Wylie , Neil Kane
IPC分类号： H01L29/04 , H01L21/3105 , H01L21/304
CPC分类号： H01L29/1602 , B81C1/0015 , H01L21/02527 , H01L21/02595 , H01L21/30625 , H01L21/3105
摘要： A method comprising: providing at least one first diamond film comprising polycrystalline diamond, e.g., nanocrystalline or ultrananocrystalline diamond, disposed on a substrate, wherein the first diamond film comprises a surface comprising diamond asperities and having a first diamond film thickness, removing asperities from the first diamond film to form a second diamond film having a second diamond film thickness, wherein the second thickness is either substantially the same as the first thickness, or the second thickness is about 100 nm or less thinner than the first diamond film thickness, optionally patterning the second diamond film to expose substrate regions and, optionally, depositing semiconductor material on the exposed substrate regions, and depositing a solid layer on the second diamond film to form a first layered structure. Applications include for example dielectric isolation in the semiconductor industry, as well as surface acoustic wave devices, scanning probe microscope, and atomic force microscope devices.
摘要翻译： 一种方法，包括：提供至少一个第一金刚石膜，其包括设置在基底上的多晶金刚石，例如纳米晶体或超微晶金刚石，其中所述第一金刚石膜包括包含金刚石凹凸并具有第一金刚石膜厚度的表面， 第一金刚石膜以形成具有第二金刚石膜厚度的第二金刚石膜，其中所述第二厚度或者与所述第一厚度基本相同，或者所述第二厚度比所述第一金刚石膜厚度薄约100nm或更薄， 所述第二金刚石膜暴露衬底区域和任选地在所述暴露的衬底区域上沉积半导体材料，以及在所述第二金刚石膜上沉积固体层以形成第一层状结构。 应用包括例如半导体工业中的介电隔离以及表面声波器件，扫描探针显微镜和原子力显微镜器件。
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公开(公告)号：US20090214826A1
公开(公告)日：2009-08-27
申请号：US12319229
申请日：2009-01-02
申请人： Charles West , John Carlisle , James Netzel , Neil Kane
发明人： Charles West , John Carlisle , James Netzel , Neil Kane
CPC分类号： B24B37/042 , B24D3/10 , C23C16/27 , C23C16/56 , Y10T428/24355
摘要： A method of preparing a low friction diamond surface comprises removing asperities from a surface of a polycrystalline diamond film disposed on a substrate, e.g., by removing not more than about 500 nm (e.g., not more than about 100 nm, 50 nm, 25 nm, or 10 nm) of diamond, on average, from the surface of the film. The removal step can be controlled to preserve depressions in the surface, which can provide useful properties, such as reservoirs for lubrication, which contribute to the low friction properties of diamond films prepared by the methods of the present invention. The diamond films of the invention preferably have an average grain size of about 2000 nm or less (e.g., less than or equal to about 1000 nm, 100 nm, 50 nm, 20 nm or 10 nm), and preferably include fewer than about 2000 asperities per square millimeter of diamond surface, or about 4/mm on a linear basis, as determined using a 2 μm diameter profilometer stylus tip.
摘要翻译： 制备低摩擦金刚石表面的方法包括从设置在基底上的多晶金刚石膜的表面除去粗糙度，例如通过去除不超过约500nm（例如不超过约100nm，50nm，25nm） ，或10nm）的金刚石，平均来说是从膜的表面。 可以控制去除步骤以保持表面中的凹陷，这可以提供有用的性质，例如用于润滑的储存器，其有助于通过本发明的方法制备的金刚石膜的低摩擦性能。 本发明的金刚石膜的平均粒径优选为约2000nm以下（例如，小于或等于约1000nm，100nm，50nm，20nm或10nm），优选包括少于约2000 如使用2毫米直径轮廓仪触针尖所确定的，每平方毫米金刚石表面的粗糙度，或以线性为基准的约4 / mm。
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