公开(公告)号：US08232559B2

公开(公告)日：2012-07-31

申请号：US13018252

申请日：2011-01-31

申请人： Charles West ,  John Carlisle ,  James Netzel ,  Ian Wylie ,  Neil Kane

发明人： Charles West ,  John Carlisle ,  James Netzel ,  Ian Wylie ,  Neil Kane

IPC分类号： H01L29/15

CPC分类号： H01L29/1602 ,  B81C1/0015 ,  H01L21/02527 ,  H01L21/02595 ,  H01L21/30625 ,  H01L21/3105

摘要： A method comprising: providing at least one first diamond film comprising polycrystalline diamond, e.g., nanocrystalline or ultrananocrystalline diamond, disposed on a substrate, wherein the first diamond film comprises a surface comprising diamond asperities and having a first diamond film thickness, removing asperities from the first diamond film to form a second diamond film having a second diamond film thickness, wherein the second thickness is either substantially the same as the first thickness, or the second thickness is about 100 nm or less thinner than the first diamond film thickness, optionally patterning the second diamond film to expose substrate regions and, optionally, depositing semiconductor material on the exposed substrate regions, and depositing a solid layer on the second diamond film to form a first layered structure. Applications include for example dielectric isolation in the semiconductor industry, as well as surface acoustic wave devices, scanning probe microscope, and atomic force microscope devices.

公开(公告)号：US20110186942A1

公开(公告)日：2011-08-04

申请号：US13018252

申请日：2011-01-31

申请人： Charles West ,  John Carlisle ,  James Netzel ,  Ian Wylie ,  Neil Kane

发明人： Charles West ,  John Carlisle ,  James Netzel ,  Ian Wylie ,  Neil Kane

IPC分类号： H01L27/12 ,  H01L29/66 ,  B82Y15/00 ,  B82Y99/00

CPC分类号： H01L29/1602 ,  B81C1/0015 ,  H01L21/02527 ,  H01L21/02595 ,  H01L21/30625 ,  H01L21/3105

摘要： A method comprising: providing at least one first diamond film comprising polycrystalline diamond, e.g., nanocrystalline or ultrananocrystalline diamond, disposed on a substrate, wherein the first diamond film comprises a surface comprising diamond asperities and having a first diamond film thickness, removing asperities from the first diamond film to form a second diamond film having a second diamond film thickness, wherein the second thickness is either substantially the same as the first thickness, or the second thickness is about 100 nm or less thinner than the first diamond film thickness, optionally patterning the second diamond film to expose substrate regions and, optionally, depositing semiconductor material on the exposed substrate regions, and depositing a solid layer on the second diamond film to form a first layered structure. Applications include for example dielectric isolation in the semiconductor industry, as well as surface acoustic wave devices, scanning probe microscope, and atomic force microscope devices.

摘要翻译： 一种方法，包括：提供至少一个第一金刚石膜，其包括设置在基底上的多晶金刚石，例如纳米晶体或超微晶金刚石，其中所述第一金刚石膜包括包含金刚石凹凸并具有第一金刚石膜厚度的表面， 第一金刚石膜以形成具有第二金刚石膜厚度的第二金刚石膜，其中所述第二厚度或者与所述第一厚度基本相同，或者所述第二厚度比所述第一金刚石膜厚度薄约100nm或更薄， 所述第二金刚石膜暴露衬底区域和任选地在所述暴露的衬底区域上沉积半导体材料，以及在所述第二金刚石膜上沉积固体层以形成第一层状结构。 应用包括例如半导体工业中的介电隔离以及表面声波器件，扫描探针显微镜和原子力显微镜器件。

公开(公告)号：US20090173950A1

公开(公告)日：2009-07-09

申请号：US12348240

申请日：2009-01-02

申请人： Charles West ,  John Carlisle ,  James Netzel ,  Ian Wylie ,  Neil Kane

发明人： Charles West ,  John Carlisle ,  James Netzel ,  Ian Wylie ,  Neil Kane

IPC分类号： H01L29/04 ,  H01L21/3105 ,  H01L21/304

CPC分类号： H01L29/1602 ,  B81C1/0015 ,  H01L21/02527 ,  H01L21/02595 ,  H01L21/30625 ,  H01L21/3105

摘要： A method comprising: providing at least one first diamond film comprising polycrystalline diamond, e.g., nanocrystalline or ultrananocrystalline diamond, disposed on a substrate, wherein the first diamond film comprises a surface comprising diamond asperities and having a first diamond film thickness, removing asperities from the first diamond film to form a second diamond film having a second diamond film thickness, wherein the second thickness is either substantially the same as the first thickness, or the second thickness is about 100 nm or less thinner than the first diamond film thickness, optionally patterning the second diamond film to expose substrate regions and, optionally, depositing semiconductor material on the exposed substrate regions, and depositing a solid layer on the second diamond film to form a first layered structure. Applications include for example dielectric isolation in the semiconductor industry, as well as surface acoustic wave devices, scanning probe microscope, and atomic force microscope devices.

摘要翻译： 一种方法，包括：提供至少一个第一金刚石膜，其包括设置在基底上的多晶金刚石，例如纳米晶体或超微晶金刚石，其中所述第一金刚石膜包括包含金刚石凹凸并具有第一金刚石膜厚度的表面， 第一金刚石膜以形成具有第二金刚石膜厚度的第二金刚石膜，其中所述第二厚度或者与所述第一厚度基本相同，或者所述第二厚度比所述第一金刚石膜厚度薄约100nm或更薄， 所述第二金刚石膜暴露衬底区域和任选地在所述暴露的衬底区域上沉积半导体材料，以及在所述第二金刚石膜上沉积固体层以形成第一层状结构。 应用包括例如半导体工业中的介电隔离以及表面声波器件，扫描探针显微镜和原子力显微镜器件。

公开(公告)号：US08227350B2

公开(公告)日：2012-07-24

申请号：US12348240

申请日：2009-01-02

申请人： Charles West ,  John Carlisle ,  James Netzel ,  Ian Wylie ,  Neil Kane

发明人： Charles West ,  John Carlisle ,  James Netzel ,  Ian Wylie ,  Neil Kane

IPC分类号： H01L21/304

CPC分类号： H01L29/1602 ,  B81C1/0015 ,  H01L21/02527 ,  H01L21/02595 ,  H01L21/30625 ,  H01L21/3105

摘要： A method comprising: providing at least one first diamond film comprising polycrystalline diamond, e.g., nanocrystalline or ultrananocrystalline diamond, disposed on a substrate, wherein the first diamond film comprises a surface comprising diamond asperities and having a first diamond film thickness, removing asperities from the first diamond film to form a second diamond film having a second diamond film thickness, wherein the second thickness is either substantially the same as the first thickness, or the second thickness is about 100 nm or less thinner than the first diamond film thickness, optionally patterning the second diamond film to expose substrate regions and, optionally, depositing semiconductor material on the exposed substrate regions, and depositing a solid layer on the second diamond film to form a first layered structure. Applications include for example dielectric isolation in the semiconductor industry, as well as surface acoustic wave devices, scanning probe microscope, and atomic force microscope devices.

摘要翻译： 一种方法，包括：提供至少一个第一金刚石膜，其包括设置在基底上的多晶金刚石，例如纳米晶体或超微晶金刚石，其中所述第一金刚石膜包括包含金刚石凹凸并具有第一金刚石膜厚度的表面， 第一金刚石膜以形成具有第二金刚石膜厚度的第二金刚石膜，其中所述第二厚度或者与所述第一厚度基本相同，或者所述第二厚度比所述第一金刚石膜厚度薄约100nm或更薄， 所述第二金刚石膜暴露衬底区域和任选地在所述暴露的衬底区域上沉积半导体材料，以及在所述第二金刚石膜上沉积固体层以形成第一层状结构。 应用包括例如半导体工业中的介电隔离以及表面声波器件，扫描探针显微镜和原子力显微镜器件。

公开(公告)号：US20090214826A1

公开(公告)日：2009-08-27

申请号：US12319229

申请日：2009-01-02

申请人： Charles West ,  John Carlisle ,  James Netzel ,  Neil Kane

发明人： Charles West ,  John Carlisle ,  James Netzel ,  Neil Kane

IPC分类号： B32B3/00 ,  B24B1/00

CPC分类号： B24B37/042 ,  B24D3/10 ,  C23C16/27 ,  C23C16/56 ,  Y10T428/24355

摘要： A method of preparing a low friction diamond surface comprises removing asperities from a surface of a polycrystalline diamond film disposed on a substrate, e.g., by removing not more than about 500 nm (e.g., not more than about 100 nm, 50 nm, 25 nm, or 10 nm) of diamond, on average, from the surface of the film. The removal step can be controlled to preserve depressions in the surface, which can provide useful properties, such as reservoirs for lubrication, which contribute to the low friction properties of diamond films prepared by the methods of the present invention. The diamond films of the invention preferably have an average grain size of about 2000 nm or less (e.g., less than or equal to about 1000 nm, 100 nm, 50 nm, 20 nm or 10 nm), and preferably include fewer than about 2000 asperities per square millimeter of diamond surface, or about 4/mm on a linear basis, as determined using a 2 μm diameter profilometer stylus tip.

摘要翻译： 制备低摩擦金刚石表面的方法包括从设置在基底上的多晶金刚石膜的表面除去粗糙度，例如通过去除不超过约500nm（例如不超过约100nm，50nm，25nm） ，或10nm）的金刚石，平均来说是从膜的表面。 可以控制去除步骤以保持表面中的凹陷，这可以提供有用的性质，例如用于润滑的储存器，其有助于通过本发明的方法制备的金刚石膜的低摩擦性能。 本发明的金刚石膜的平均粒径优选为约2000nm以下（例如，小于或等于约1000nm，100nm，50nm，20nm或10nm），优选包括少于约2000 如使用2毫米直径轮廓仪触针尖所确定的，每平方毫米金刚石表面的粗糙度，或以线性为基准的约4 / mm。

公开(公告)号：US20060251875A1

公开(公告)日：2006-11-09

申请号：US11123602

申请日：2005-05-06

申请人： John Carlisle ,  Michael Pellin ,  Jeffrey Elam ,  Jian Wang

发明人： John Carlisle ,  Michael Pellin ,  Jeffrey Elam ,  Jian Wang

IPC分类号： B32B7/02

CPC分类号： A61L27/50 ,  A61L27/30 ,  Y10T428/2495 ,  Y10T428/249921 ,  Y10T428/265

摘要： A biocompatible and bio-inert device is disclosed along with a method of making same. The device includes multiple layers of materials, preferably at least on layer of Al2O3, and an exterior amorphous layer, preferably TiO2.

摘要翻译： 公开了生物相容性和生物惰性的装置及其制造方法。 该装置包括多层材料，优选至少在Al 2 O 3层3上，以及外部非晶层，优选TiO 2。

公开(公告)号：US20050031785A1

公开(公告)日：2005-02-10

申请号：US10892736

申请日：2004-07-15

申请人： John Carlisle ,  Dieter Gruen ,  Orlando Auciello ,  Xingcheng Xiao

发明人： John Carlisle ,  Dieter Gruen ,  Orlando Auciello ,  Xingcheng Xiao

IPC分类号： C23C16/27 ,  C23C16/00 ,  B32B9/00

CPC分类号： C23C16/274 ,  C23C16/277 ,  Y10T428/30

摘要： A method of depositing nanocrystalline diamond film on a substrate at a rate of not less than about 0.2 microns/hour at a substrate temperature less than about 500° C. The method includes seeding the substrate surface with nanocrystalline diamond powder to an areal density of not less than about 1010sites/cm2, and contacting the seeded substrate surface with a gas of about 99% by volume of an inert gas other than helium and about 1% by volume of methane or hydrogen and one or more of acetylene, fullerene and anthracene in the presence of a microwave induced plasma while maintaining the substrate temperature less than about 500° C. to deposit nanocrystalline diamond on the seeded substrate surface at a rate not less than about 0.2 microns/hour. Coatings of nanocrystalline diamond with average particle diameters of less than about 20 nanometers can be deposited with thermal budgets of 500° C.-4 hours or less onto a variety of substrates such as MEMS devices.

摘要翻译： 在衬底温度小于约500℃下以不小于约0.2微米/小时的速度在衬底上沉积纳米晶金刚石膜的方法。该方法包括将纳米晶体金刚石粉末的衬底表面接种到不是 小于约10 <10个位点/ cm 2，并且使接种的底物表面与约99体积％的除氦和约1体积％的甲烷或氢气之外的惰性气体和一个或多个 的乙炔，富勒烯和蒽在微波诱导的等离子体的存在下，同时保持衬底温度低于约500℃，以便以​​不小于约0.2微米/小时的速率将纳米晶体金刚石沉积在接种的衬底表面上。 平均粒径小于约20纳米的纳米晶体金刚石的涂层可以以500℃-4小时以下的热预算沉积到诸如MEMS器件的各种基板上。

公开(公告)号：US20060131588A1

公开(公告)日：2006-06-22

申请号：US10398329

申请日：2001-10-09

申请人： Dieter Gruen ,  Olando Auciello ,  Greg Swain ,  Ming Ding ,  John Carlisle ,  Alan Krauss ,  Julie Krauss

发明人： Dieter Gruen ,  Olando Auciello ,  Greg Swain ,  Ming Ding ,  John Carlisle ,  Alan Krauss ,  Julie Krauss

IPC分类号： H01L31/0312

CPC分类号： C23C16/278 ,  C23C16/274 ,  H01J1/304 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30457

摘要： An electrode having a surface of an electrically conducting ultrananocrystalline diamond having not less than 1019 atoms/cm3 nitrogen with an electrical conductivity at ambient temperature of not less than about 0.1 (Ω·cm)−1 is disclosed as is a method of remediating toxic materials with the electrode. An electron emission device incorporating an electrically conducting ultrananocrystalline diamond having not less that 1019 atoms/cm3 nitrogen with an electrical conductivity at ambient temperature of not less than about 0.1 (Ω·cm)−1 is disclosed.

摘要翻译： 具有导电超微晶金刚石表面的电极，其表面具有不小于10 19原子/ cm 3的氮，导电性在环境温度下不低于约0.1（ 公开了一种用电极补救有毒物质的方法。 一种电子发射装置，其结合有不少于10 19原子/ cm 3的导电超微晶金刚石，其环境温度为不小于约0.1（Ω） .cm） ^{-1 。}

公开(公告)号：US20060127300A1

公开(公告)日：2006-06-15

申请号：US11350005

申请日：2006-02-08

申请人： John Carlisle ,  Orlando Auciello ,  James Birrell

发明人： John Carlisle ,  Orlando Auciello ,  James Birrell

IPC分类号： C01B31/06

CPC分类号： C23C16/274 ,  C23C16/277 ,  C23C16/279

摘要： An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm. A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.

摘要翻译： 具有3至5纳米（nm）平均晶粒尺寸和不超过约8体积％的平均晶粒尺寸大于10nm的金刚石的超微晶金刚石（UNCD）。 还公开了一种制造UNCD膜的方法，其中除了He之外的惰性气体中的乙炔和氢气的蒸气，其中乙炔与氢的体积比大于0.35且小于0.85，余量为惰性气体的是 经受合适量的能量以使至少一些乙炔分裂，以形成平均粒径为3至5nm且不超过约8体积％的平均晶粒尺寸大于10nm的金刚石的UNCD膜。

公开(公告)号：US20050042161A1

公开(公告)日：2005-02-24

申请号：US10845867

申请日：2004-05-13

申请人： John Carlisle ,  Orlando Auciello ,  James Birrell

发明人： John Carlisle ,  Orlando Auciello ,  James Birrell

IPC分类号： C01B31/06 ,  C23C16/27

CPC分类号： C23C16/274 ,  C23C16/277 ,  C23C16/279

摘要： An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm. A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.

摘要翻译： 具有3至5纳米（nm）平均晶粒尺寸和不超过约8体积％的平均晶粒尺寸大于10nm的金刚石的超微晶金刚石（UNCD）。 还公开了一种制造UNCD膜的方法，其中除了He之外的惰性气体中的乙炔和氢气的蒸气，其中乙炔与氢的体积比大于0.35且小于0.85，余量为惰性气体的是 经受合适量的能量以使至少一些乙炔分裂，以形成平均粒径为3至5nm且不超过约8体积％的平均晶粒尺寸大于10nm的金刚石的UNCD膜。