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    SEMICONDUCTOR STRUCTURE
    1.
    发明申请
    SEMICONDUCTOR STRUCTURE 审中-公开
    半导体结构

    公开(公告)号：US20140158984A1

    公开(公告)日：2014-06-12

    申请号：US13917645

    申请日：2013-06-14

    申请人： Chi-Feng Huang ,  Sheng-Han Tu

    发明人： Chi-Feng Huang ,  Sheng-Han Tu

    IPC分类号： H01L29/15

    CPC分类号： H01L33/12 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/201 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32

    摘要： A semiconductor structure includes a silicon substrate, an aluminum nitride layer and a plurality of grading stress buffer layers. The aluminum nitride layer is disposed on the silicon substrate. The grading stress buffer layers are disposed on the aluminum nitride layer. Each grading stress buffer layer includes a grading layer and a transition layer stacked up sequentially. A chemical formula of the grading layer is Al1−xGaxN, wherein the x value is increased from one side near the silicon substrate to a side away from the silicon substrate, and 0≦x≦1. A chemical formula of the transition layer is the same as the chemical formula of a side surface of the grading layer away from the silicon substrate. The chemical formula of the transition layer of the grading stress buffer layer furthest from the silicon substrate is GaN.

    摘要翻译： 半导体结构包括硅衬底，氮化铝层和多个分级应力缓冲层。 氮化铝层设置在硅衬底上。 分级应力缓冲层设置在氮化铝层上。 每个分级应力缓冲层包括依次层叠的分级层和过渡层。 分级层的化学式为Al1-xGaxN，其中x值从硅衬底附近的一侧增加到远离硅衬底的一侧，并且0和n 1; x＆lt; 1; 1。 过渡层的化学式与脱离硅衬底的分级层的侧表面的化学式相同。 离硅衬底最远的分级应力缓冲层的过渡层的化学式为GaN。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    2.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    半导体发光器件及其制造方法

    公开(公告)号：US20130240932A1

    公开(公告)日：2013-09-19

    申请号：US13798149

    申请日：2013-03-13

    申请人： Sheng-Han Tu ,  Gwo-Jiun Sheu ,  Sheng-Chieh Tsai ,  Kuan-Yung Liao ,  Yun-Li Li

    发明人： Sheng-Han Tu ,  Gwo-Jiun Sheu ,  Sheng-Chieh Tsai ,  Kuan-Yung Liao ,  Yun-Li Li

    IPC分类号： H01L33/58

    CPC分类号： H01L33/58 ,  H01L33/10

    摘要： A semiconductor light-emitting device and a manufacturing method thereof are provided, wherein the semiconductor light-emitting device includes a substrate, a first type doped semiconductor layer, a light-emitting layer, a second type doped semiconductor layer and an optical micro-structure layer. The first type doped semiconductor layer is disposed on the substrate and includes a base portion and a mesa portion. The base portion has a top surface, and the mesa portion is disposed on the top surface of the base portion. The light-emitting layer is disposed on the first type doped semiconductor layer. The second type doped semiconductor layer is disposed on the light-emitting layer. The optical micro-structure layer is embedded in the first type doped semiconductor layer.

    摘要翻译： 提供一种半导体发光器件及其制造方法，其中半导体发光器件包括衬底，第一掺杂半导体层，发光层，第二掺杂半导体层和光学微结构 层。 第一种掺杂半导体层设置在基板上，并且包括基部和台面部。 基部具有顶表面，并且台面部分设置在基部的顶表面上。 发光层设置在第一型掺杂半导体层上。 第二种掺杂半导体层设置在发光层上。 光学微结构层嵌入第一种掺杂半导体层。