公开(公告)号：US20080036304A1

公开(公告)日：2008-02-14

申请号：US11503057

申请日：2006-08-14

申请人： Chi-Hsin Ho ,  Chih-Chien Liu

发明人： Chi-Hsin Ho ,  Chih-Chien Liu

IPC分类号： H02K41/00 ,  G21K5/00

CPC分类号： H02K41/0356 ,  G02B7/08

摘要： A high performance focusing actuator of a voice coil motor comprises a retaining unit having a plastic retaining frame; a center portion of the plastic retaining frame being a receiving space; two opposite corners of the receiving space being chamfered; an inner side of each chamfered side being formed with a slide portion; and a metal rear cover plate having a shape corresponding to that of the plastic retaining frame; the metal rear cover plate having an open space coaxial with the receiving space of the plastic retaining frame; an outer side of the metal rear cover plate having four outer plates; each of two opposite corners of each outer plate being formed with an inclined guide surface corresponding to the slide portion of the plastic retaining frame; an iron receiving gap being formed between an inclined guide surface and outer plate; and each iron receiving gap receiving a magnet.

摘要翻译： 音圈电动机的高性能聚焦致动器包括具有塑料保持架的保持单元; 塑料保持框架的中心部分是容纳空间; 接收空间的两个相对角被倒角; 每个倒角侧的内侧形成有滑动部分; 和金属后盖板，其形状与塑料保持架的形状相对应; 金属后盖板具有与塑料保持框架的容纳空间同轴的开放空间; 金属后盖板的外侧具有四个外板; 每个外板的两个相对的角部中的每一个形成有对应于塑料保持框架的滑动部分的倾斜的引导表面; 在倾斜的引导表面和外部板之间形成铁接收间隙; 并且每个铁接收间隙接收磁体。

公开(公告)号：US07576455B2

公开(公告)日：2009-08-18

申请号：US11503057

申请日：2006-08-14

申请人： Chi-Hsin Ho ,  Chih-Chien Liu

发明人： Chi-Hsin Ho ,  Chih-Chien Liu

IPC分类号： H02K41/00

CPC分类号： H02K41/0356 ,  G02B7/08

摘要： A high performance focusing actuator of a voice coil motor comprises a retaining unit having a plastic retaining frame; a center portion of the plastic retaining frame being a receiving space; two opposite corners of the receiving space being chamfered; an inner side of each chamfered side being formed with a slide portion; and a metal rear cover plate having a shape corresponding to that of the plastic retaining frame; the metal rear cover plate having an open space coaxial with the receiving space of the plastic retaining frame; an outer side of the metal rear cover plate having four outer plates; each of two opposite corners of each outer plate being formed with an inclined guide surface corresponding to the slide portion of the plastic retaining frame; an iron receiving gap being formed between an inclined guide surface and outer plate; and each iron receiving gap receiving a magnet.

摘要翻译： 音圈马达的高性能聚焦致动器包括具有塑料保持架的保持单元; 塑料保持框架的中心部分是容纳空间; 接收空间的两个相对角被倒角; 每个倒角侧的内侧形成有滑动部分; 和金属后盖板，其形状与塑料保持架的形状相对应; 金属后盖板具有与塑料保持框架的容纳空间同轴的开放空间; 金属后盖板的外侧有四个外板; 每个外板的两个相对的角部中的每一个形成有对应于塑料保持框架的滑动部分的倾斜导向表面; 在倾斜的引导表面和外部板之间形成铁接收间隙; 并且每个铁接收间隙接收磁体。

公开(公告)号：US20210286412A1

公开(公告)日：2021-09-16

申请号：US17192891

申请日：2021-03-05

申请人： Yi-Chun Lin ,  Ya-Hui Tseng ,  I-Kai Liu ,  Po-Ching Chiang ,  Chien-Lun Sun ,  Yen-Kang Chen ,  Jih-Houng Lee ,  Chih-Chien Liu

发明人： Yi-Chun Lin ,  Ya-Hui Tseng ,  I-Kai Liu ,  Po-Ching Chiang ,  Chien-Lun Sun ,  Yen-Kang Chen ,  Jih-Houng Lee ,  Chih-Chien Liu

IPC分类号： G06F1/16 ,  A61L2/00

摘要： A portable electronic device including a first body, a second body, a hinge mechanism, a control unit, a sensor unit, a sterilization module, and a shielding module, is provided. The first body has a first inner surface. The second body has a second inner surface. The hinge mechanism is connected between the first body and the second body. The control unit is disposed in the first body or the second body. The sensor unit is disposed in the first body or the second body and coupled to the control unit. The sterilization module is disposed at the hinge mechanism and coupled to the control unit, the sterilization module is configured to generate light for sterilization and disinfection. The shielding module is disposed on the hinge mechanism and the shielding module can move relative to the hinge mechanism.

公开(公告)号：US10923809B2

公开(公告)日：2021-02-16

申请号：US16372412

申请日：2019-04-02

申请人： Liang-Che Chou ,  Li-Chun Lee ,  Yu-Chun Hsieh ,  Mau-Chi Sun ,  Jui-Hung Lai ,  Wen-Feng Tsai ,  Chih-Chien Liu

发明人： Liang-Che Chou ,  Li-Chun Lee ,  Yu-Chun Hsieh ,  Mau-Chi Sun ,  Jui-Hung Lai ,  Wen-Feng Tsai ,  Chih-Chien Liu

IPC分类号： H01Q1/52 ,  H04B1/18 ,  H01Q1/24

摘要： A communication apparatus, an electronic apparatus and an antenna adjustment method thereof are provided. The communication apparatus includes an antenna system, a tuning portion and a switch circuit. The antenna system includes at least two antenna units. The tuning portion is disposed between the at least two antenna units and includes at least two branch units. The switch circuit is coupled to the tuning portion. The switch circuit switches a conduction from a first one of the branch units to a second one of the branch units according to a switching signal. The switching signal is related to performances of the antenna system. Accordingly, a dynamic and flexible adjustment mechanism can be provided to increase throughput and improve users' internet experience.

公开(公告)号：US20150355842A1

公开(公告)日：2015-12-10

申请号：US14631870

申请日：2015-02-26

申请人： Chih-Chien Liu ,  Chun-Sheng Chen ,  Sheng-Hung Lee ,  Chin-Kuo Huang ,  Chin-Liang Hsu

发明人： Chih-Chien Liu ,  Chun-Sheng Chen ,  Sheng-Hung Lee ,  Chin-Kuo Huang ,  Chin-Liang Hsu

IPC分类号： G06F3/06

CPC分类号： G06F3/0604 ,  G06F3/0625 ,  G06F3/0634 ,  G06F3/0635 ,  G06F3/068 ,  Y02D10/154

摘要： A management method of a hybrid storage unit and an electronic apparatus of the hybrid storage unit are provided. The electronic apparatus includes a hybrid storage unit. The hybrid storage unit includes a first storage unit and a second storage unit. The second storage unit includes a first storage area and a second storage area. If a relationship between the electronic apparatus and an external apparatus is detected as being an undocked relationship, the first storage unit is disabled by a controller of the hybrid storage unit, and the second storage area serves to simulate and replace the first storage unit. The controller reports a storage unit status change notification to an operating system, so as to allow the operating system to re-enumerate the hybrid storage unit.

摘要翻译： 提供了一种混合存储单元的管理方法和混合存储单元的电子设备。 电子设备包括混合存储单元。 混合存储单元包括第一存储单元和第二存储单元。 第二存储单元包括第一存储区域和第二存储区域。 如果电子设备与外部设备之间的关系被检测为脱离关系，则混合存储单元的控制器禁用第一存储单元，并且第二存储区域用于模拟和替换第一存储单元。 控制器向操作系统报告存储单元状态改变通知，以允许操作系统重新列举混合存储单元。

公开(公告)号：US08921944B2

公开(公告)日：2014-12-30

申请号：US13185517

申请日：2011-07-19

申请人： Chun-Yuan Wu ,  Chih-Chien Liu

发明人： Chun-Yuan Wu ,  Chih-Chien Liu

IPC分类号： H01L29/78 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/768 ,  H01L21/762

CPC分类号： H01L21/823412 ,  H01L21/76224 ,  H01L21/76801 ,  H01L21/823418 ,  H01L21/823475 ,  H01L21/823481 ,  H01L27/088 ,  H01L29/7843 ,  H01L29/7846

摘要： A semiconductor device is disclosed. The semiconductor device includes: a substrate; a metal-oxide semiconductor (MOS) transistor disposed in the substrate; and a shallow trench isolation (STI) disposed in the substrate and around the MOS transistor, in which the STI comprises a stress material.

摘要翻译： 公开了一种半导体器件。 半导体器件包括：衬底; 设置在所述基板中的金属氧化物半导体（MOS）晶体管; 以及设置在衬底中并围绕MOS晶体管的浅沟槽隔离（STI），其中STI包括应力材料。

公开(公告)号：US08822284B2

公开(公告)日：2014-09-02

申请号：US13370231

申请日：2012-02-09

申请人： Chin-Fu Lin ,  Chin-Cheng Chien ,  Chun-Yuan Wu ,  Teng-Chun Tsai ,  Chih-Chien Liu

发明人： Chin-Fu Lin ,  Chin-Cheng Chien ,  Chun-Yuan Wu ,  Teng-Chun Tsai ,  Chih-Chien Liu

IPC分类号： H01L29/06 ,  H01L29/78 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/02 ,  H01L21/3115 ,  H01L21/311 ,  H01L21/318 ,  H01L21/314

CPC分类号： H01L29/785 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02636 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3115 ,  H01L21/3141 ,  H01L21/3185 ,  H01L21/764 ,  H01L21/823431 ,  H01L21/823437 ,  H01L27/0886 ,  H01L27/10879 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795

摘要： A method for fabricating FinFETs is described. A semiconductor substrate is patterned to form odd fins. Spacers are formed on the substrate and on the sidewalls of the odd fins, wherein each spacer has a substantially vertical sidewall. Even fins are then formed on the substrate between the spacers. A semiconductor structure for forming FinFETs is also described, which is fabricated using the above method.

摘要翻译： 描述了制造FinFET的方法。 图案化半导体衬底以形成奇数鳍片。 间隔件形成在基底上和奇数翅片的侧壁上，其中每个间隔件具有基本垂直的侧壁。 然后在间隔件之间的基板上均匀形成翅片。 还描述了用于形成FinFET的半导体结构，其使用上述方法制造。

公开(公告)号：US20140042501A1

公开(公告)日：2014-02-13

申请号：US13571369

申请日：2012-08-10

申请人： Jei-Ming Chen ,  Chih-Chien Liu ,  Yu-Shu Lin ,  Tzu-Chin Wu

发明人： Jei-Ming Chen ,  Chih-Chien Liu ,  Yu-Shu Lin ,  Tzu-Chin Wu

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/6656 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/7833

摘要： A MOS transistor includes a gate structure and a spacer. The gate structure is located on a substrate. The spacer is located on the substrate beside the gate structure, and the spacer includes an L-shaped inner spacer and an outer spacer, wherein the outer spacer is located on the L-shaped inner spacer, and the two ends of the L-shaped inner spacer protrude from the outer spacer. Moreover, the present invention also provides a MOS transistor process for forming the MOS transistor.

摘要翻译： MOS晶体管包括栅极结构和间隔物。 栅极结构位于衬底上。 间隔件位于栅极结构旁边的基板上，并且间隔件包括L形内部间隔件和外部间隔件，其中外部间隔件位于L形内部间隔件上，并且L形的两个端部 内间隔件从外间隔件突出。 此外，本发明还提供一种用于形成MOS晶体管的MOS晶体管工艺。

公开(公告)号：US08647941B2

公开(公告)日：2014-02-11

申请号：US13211319

申请日：2011-08-17

申请人： Chin-Cheng Chien ,  Chun-Yuan Wu ,  Chih-Chien Liu ,  Chin-Fu Lin ,  Teng-Chun Tsai

发明人： Chin-Cheng Chien ,  Chun-Yuan Wu ,  Chih-Chien Liu ,  Chin-Fu Lin ,  Teng-Chun Tsai

IPC分类号： H01L21/8238

CPC分类号： H01L29/7846 ,  H01L21/76283 ,  H01L29/1054 ,  H01L29/66651 ,  H01L29/78

摘要： A method of forming a semiconductor device includes the following steps. A semiconductor substrate having a first strained silicon layer is provided. Then, an insulating region such as a shallow trench isolation (STI) is formed, where a depth of the insulating region is substantially larger than a depth of the first strained silicon layer. Subsequently, the first strained silicon layer is removed, and a second strained silicon layer is formed to substitute the first strained silicon layer.

摘要翻译： 形成半导体器件的方法包括以下步骤。 提供具有第一应变硅层的半导体衬底。 然后，形成诸如浅沟槽隔离（STI）的绝缘区域，其中绝缘区域的深度基本上大于第一应变硅层的深度。 随后，去除第一应变硅层，形成第二应变硅层以代替第一应变硅层。

公开(公告)号：US08497198B2

公开(公告)日：2013-07-30

申请号：US13243485

申请日：2011-09-23

申请人： Chin-Cheng Chien ,  Chun-Yuan Wu ,  Chih-Chien Liu ,  Chin-Fu Lin ,  Teng-Chun Tsai

发明人： Chin-Cheng Chien ,  Chun-Yuan Wu ,  Chih-Chien Liu ,  Chin-Fu Lin ,  Teng-Chun Tsai

IPC分类号： H01L21/4763 ,  H01L21/3205 ,  H01L21/336

CPC分类号： H01L29/66795

摘要： A semiconductor process is described as follows. A plurality of dummy patterns is formed on a substrate. A mask material layer is conformally formed on the substrate, so as to cover the dummy patterns. The mask material layer has an etching rate different from that of the dummy patterns. A portion of the mask material layer is removed, so as to form a mask layer on respective sidewalls of each dummy pattern. An upper surface of the mask layer and an upper surface of each dummy pattern are substantially coplanar. The dummy patterns are removed. A portion of the substrate is removed using the mask layer as a mask, so as to form a plurality of fin structures and a plurality of trenches alternately arranged in the substrate. The mask layer is removed.

摘要翻译： 半导体工艺描述如下。 在基板上形成多个虚设图案。 在基板上共形形成掩模材料层，以覆盖虚设图案。 掩模材料层具有与虚拟图案不同的蚀刻速率。 除去掩模材料层的一部分，以便在每个虚设图案的各个侧壁上形成掩模层。 掩模层的上表面和每个虚拟图案的上表面基本上共面。 虚拟图案被去除。 使用掩模层作为掩模去除衬底的一部分，以便形成多个翅片结构和交替布置在衬底中的多个沟槽。 去除掩模层。