公开(公告)号：US20120132914A1

公开(公告)日：2012-05-31

申请号：US13045502

申请日：2011-03-10

申请人： Chia-Hsiang Chen ,  Shih-Hsien Tseng ,  Ming-Chin Hung ,  Chun-Hao Tu ,  Wei-Ting Lin ,  Jiun-Jye Chang

发明人： Chia-Hsiang Chen ,  Shih-Hsien Tseng ,  Ming-Chin Hung ,  Chun-Hao Tu ,  Wei-Ting Lin ,  Jiun-Jye Chang

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/45 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

摘要： An oxide semiconductor thin film transistor structure includes a substrate, a gate electrode disposed on the substrate, a semiconductor insulating layer disposed on the substrate and the gate electrode, an oxide semiconductor layer disposed on the semiconductor insulating layer, a patterned semiconductor layer disposed on the oxide semiconductor layer, and a source electrode and a drain electrode respectively disposed on the patterned semiconductor layer. The source electrode and the drain electrode are made of a metal layer.

摘要翻译： 氧化物半导体薄膜晶体管结构包括基板，设置在基板上的栅极电极，设置在基板上的半导体绝缘层和栅电极，设置在半导体绝缘层上的氧化物半导体层，设置在该半导体绝缘层上的图案化半导体层 氧化物半导体层，以及分别设置在图案化半导体层上的源电极和漏电极。 源电极和漏电极由金属层制成。

公开(公告)号：US08643006B2

公开(公告)日：2014-02-04

申请号：US13163727

申请日：2011-06-20

申请人： Chia-Hsiang Chen ,  Ming-Chin Hung ,  Chun-Hao Tu ,  Wei-Ting Lin ,  Jiun-Jye Chang

发明人： Chia-Hsiang Chen ,  Ming-Chin Hung ,  Chun-Hao Tu ,  Wei-Ting Lin ,  Jiun-Jye Chang

IPC分类号： H01L29/786

CPC分类号： H01L29/4908 ,  H01L29/7869

摘要： A thin film transistor is provided. The thin film transistor includes a substrate, a gate, a gate insulating layer, a source and a drain, a channel layer, and first and second patterned passivation layers. The gate is disposed on the substrate. The gate insulating layer is disposed on the gate. The source and the drain are disposed on the gate insulating layer. The channel layer is disposed above or under the source and the drain, wherein a portion of the channel layer is exposed between the source and the drain. The first patterned passivation layer is disposed on the portion of the channel layer, wherein the first patterned passivation layer includes metal oxide, and the first patterned passivation layer has a thickness ranging from 50 angstroms to 300 angstroms. The second patterned passivation layer covers the first patterned passivation layer, the gate insulating layer, and the source and the drain.

摘要翻译： 提供薄膜晶体管。 薄膜晶体管包括衬底，栅极，栅极绝缘层，源极和漏极，沟道层以及第一和第二图案化钝化层。 栅极设置在基板上。 栅极绝缘层设置在栅极上。 源极和漏极设置在栅极绝缘层上。 沟道层设置在源极和漏极之上或之下，其中沟道层的一部分暴露在源极和漏极之间。 第一图案化钝化层设置在沟道层的部分上，其中第一图案化钝化层包括金属氧化物，第一图案化钝化层的厚度范围为50埃至300埃。 第二图案化钝化层覆盖第一图案化钝化层，栅极绝缘层以及源极和漏极。

公开(公告)号：US20120267621A1

公开(公告)日：2012-10-25

申请号：US13163727

申请日：2011-06-20

申请人： Chia-Hsiang Chen ,  Ming-Chin Hung ,  Chun-Hao Tu ,  Wei-Ting Lin ,  Jiun-Jye Chang

发明人： Chia-Hsiang Chen ,  Ming-Chin Hung ,  Chun-Hao Tu ,  Wei-Ting Lin ,  Jiun-Jye Chang

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/4908 ,  H01L29/7869

摘要： A thin film transistor is provided. The thin film transistor includes a substrate, a gate, a gate insulating layer, a source and a drain, a channel layer, and first and second patterned passivation layers. The gate is disposed on the substrate. The gate insulating layer is disposed on the gate. The source and the drain are disposed on the gate insulating layer. The channel layer is disposed above or under the source and the drain, wherein a portion of the channel layer is exposed between the source and the drain. The first patterned passivation layer is disposed on the portion of the channel layer, wherein the first patterned passivation layer includes metal oxide, and the first patterned passivation layer has a thickness ranging from 50 angstroms to 300 angstroms. The second patterned passivation layer covers the first patterned passivation layer, the gate insulating layer, and the source and the drain.

摘要翻译： 提供薄膜晶体管。 薄膜晶体管包括衬底，栅极，栅极绝缘层，源极和漏极，沟道层以及第一和第二图案化钝化层。 栅极设置在基板上。 栅极绝缘层设置在栅极上。 源极和漏极设置在栅极绝缘层上。 沟道层设置在源极和漏极之上或之下，其中沟道层的一部分暴露在源极和漏极之间。 第一图案化钝化层设置在沟道层的部分上，其中第一图案化钝化层包括金属氧化物，第一图案化钝化层的厚度范围为50埃至300埃。 第二图案化钝化层覆盖第一图案化钝化层，栅极绝缘层以及源极和漏极。

公开(公告)号：US08609460B2

公开(公告)日：2013-12-17

申请号：US13089282

申请日：2011-04-18

申请人： Po-Tsun Liu ,  Yi-Teh Chou ,  Li-Feng Teng ,  Fu-Hai Li ,  Han-Ping D. Shieh ,  Wei-Ting Lin ,  Ming-Chin Hung ,  Chun-Ching Hsiao ,  Jiun-Jye Chang ,  Po-Lun Chen

发明人： Po-Tsun Liu ,  Yi-Teh Chou ,  Li-Feng Teng ,  Fu-Hai Li ,  Han-Ping D. Shieh ,  Wei-Ting Lin ,  Ming-Chin Hung ,  Chun-Ching Hsiao ,  Jiun-Jye Chang ,  Po-Lun Chen

IPC分类号： H01L21/00 ,  H01L21/16 ,  H01L29/10 ,  H01L29/12 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

摘要： A semiconductor structure and a fabricating method thereof are provided. The fabricating method includes forming a gate, a source, and a drain on a substrate and forming an oxide semiconductor material between the gate and the source and drain. The oxide semiconductor material is formed by performing a deposition process, and nitrogen gas is introduced before the deposition process is completely performed, so as to form oxide semiconductor nitride on the oxide semiconductor material.

摘要翻译： 提供半导体结构及其制造方法。 制造方法包括在衬底上形成栅极，源极和漏极，并在栅极和源极和漏极之间形成氧化物半导体材料。 通过进行沉积工艺形成氧化物半导体材料，并且在完成沉积工艺之前引入氮气，以在氧化物半导体材料上形成氧化物半导体氮化物。

公开(公告)号：US20120061661A1

公开(公告)日：2012-03-15

申请号：US13089282

申请日：2011-04-18

申请人： Po-Tsun Liu ,  Yi-Teh Chou ,  Li-Feng Teng ,  Fu-Hai Li ,  Han-Ping D. Shieh ,  Wei-Ting Lin ,  Ming-Chin Hung ,  Chun-Ching Hsiao ,  Jiun-Jye Chang ,  Po-Lun Chen

发明人： Po-Tsun Liu ,  Yi-Teh Chou ,  Li-Feng Teng ,  Fu-Hai Li ,  Han-Ping D. Shieh ,  Wei-Ting Lin ,  Ming-Chin Hung ,  Chun-Ching Hsiao ,  Jiun-Jye Chang ,  Po-Lun Chen

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

摘要： A semiconductor structure and a fabricating method thereof are provided. The fabricating method includes forming a gate, a source, and a drain on a substrate and forming an oxide semiconductor material between the gate and the source and drain. The oxide semiconductor material is formed by performing a deposition process, and nitrogen gas is introduced before the deposition process is completely performed, so as to form oxide semiconductor nitride on the oxide semiconductor material.

摘要翻译： 提供半导体结构及其制造方法。 制造方法包括在衬底上形成栅极，源极和漏极，并在栅极和源极和漏极之间形成氧化物半导体材料。 通过进行沉积工艺形成氧化物半导体材料，并且在完成沉积工艺之前引入氮气，以在氧化物半导体材料上形成氧化物半导体氮化物。

公开(公告)号：US08816957B2

公开(公告)日：2014-08-26

申请号：US13030146

申请日：2011-02-18

申请人： Chun-Hao Tu ,  Kuo-Sen Kung ,  Jun-Hong Jan ,  Wei-Jhih Lian ,  Yu-Jung Liu ,  Fang-Hui Chan ,  Jiun-Jye Chang ,  Po-Lun Chen

发明人： Chun-Hao Tu ,  Kuo-Sen Kung ,  Jun-Hong Jan ,  Wei-Jhih Lian ,  Yu-Jung Liu ,  Fang-Hui Chan ,  Jiun-Jye Chang ,  Po-Lun Chen

IPC分类号： G06F3/038

CPC分类号： G06F1/1635 ,  G06F1/263

摘要： An electronic device including a display unit and a photoelectric conversion board is provided. The display unit includes a display surface and a back surface which are opposite to each other, and an edge of the photoelectric conversion board is rotatably connected to the back surface of the display unit. The photoelectric conversion board includes a substrate, a first photoelectric conversion unit, and a second photoelectric conversion unit. The substrate has a first surface and a second surface which are opposite to each other, the first photoelectric conversion unit is disposed on the first surface, the second photoelectric conversion unit is disposed on the second surface, and an absorption band of the first photoelectric conversion unit is different from an absorption band of the second photoelectric conversion unit.

摘要翻译： 提供一种包括显示单元和光电转换板的电子设备。 显示单元包括彼此相对的显示表面和背表面，并且光电转换板的边缘可旋转地连接到显示单元的后表面。 光电转换板包括基板，第一光电转换单元和第二光电转换单元。 基板具有彼此相对的第一表面和第二表面，第一光电转换单元设置在第一表面上，第二光电转换单元设置在第二表面上，第一光电转换单元的吸收带 单元与第二光电转换单元的吸收带不同。

公开(公告)号：US20120274263A1

公开(公告)日：2012-11-01

申请号：US13236616

申请日：2011-09-19

申请人： Kuo-Sen Kung ,  Chun-Hao Tu ,  Ren-Hong Jhan ,  Yu-Jung Liu ,  Wei-Cheng Wu ,  Jiun-Jye Chang ,  Po-Lun Chen ,  Wei-Jhih Lian ,  Liu-Yi Huang ,  Lin-Yuan You ,  Ying-Hung Lin ,  Wei-Ming Lee

发明人： Kuo-Sen Kung ,  Chun-Hao Tu ,  Ren-Hong Jhan ,  Yu-Jung Liu ,  Wei-Cheng Wu ,  Jiun-Jye Chang ,  Po-Lun Chen ,  Wei-Jhih Lian ,  Liu-Yi Huang ,  Lin-Yuan You ,  Ying-Hung Lin ,  Wei-Ming Lee

IPC分类号： H02J7/00 ,  G05F3/02

CPC分类号： G05F1/67 ,  Y02E10/58

摘要： A system for power management electrically connected to a solar cell is provided. The system for power management includes a photo-sensor, a controller electrically connected to the photo-sensor, and a power manager. The photo-sensor detects an illumination (illuminance or irradiance) of an environment where the solar cell is located. A look-up table of illumination vs. maximum output power is built in the controller, wherein a corresponding maximum output power is determined by the controller according to the illumination detected by the photo-sensor. The power manager is electrically connected to the controller and the solar cell. The power manager controls the output current of the solar cell so as to equalize an output power of solar cell and the corresponding maximum output power. A method for power management is also provided.

摘要翻译： 提供一种与太阳能电池电连接的电力管理系统。 用于电源管理的系统包括光电传感器，电连接到光电传感器的控制器和电源管理器。 光电传感器检测太阳能电池所处的环境的照度（照度或照度）。 在控制器中内置有照明与最大输出功率的查找表，其中相应的最大输出功率由控制器根据光传感器检测到的照度来确定。 电源管理器电连接到控制器和太阳能电池。 功率管理器控制太阳能电池的输出电流，以使太阳能电池的输出功率和相应的最大输出功率相等。 还提供了一种用于电源管理的方法。

公开(公告)号：US20120105401A1

公开(公告)日：2012-05-03

申请号：US13030146

申请日：2011-02-18

申请人： Chun-Hao Tu ,  Kuo-Sen Kung ,  Jun-Hong Jan ,  Wei-Jhih Lian ,  Yu-Jung Liu ,  Fang-Hui Chan ,  Jiun-Jye Chang ,  Po-Lun Chen

发明人： Chun-Hao Tu ,  Kuo-Sen Kung ,  Jun-Hong Jan ,  Wei-Jhih Lian ,  Yu-Jung Liu ,  Fang-Hui Chan ,  Jiun-Jye Chang ,  Po-Lun Chen

IPC分类号： G06F3/038

CPC分类号： G06F1/1635 ,  G06F1/263

摘要： An electronic device including a display unit and a photoelectric conversion board is provided. The display unit includes a display surface and a back surface which are opposite to each other, and an edge of the photoelectric conversion board is rotatably connected to the back surface of the display unit. The photoelectric conversion board includes a substrate, a first photoelectric conversion unit, and a second photoelectric conversion unit. The substrate has a first surface and a second surface which are opposite to each other, the first photoelectric conversion unit is disposed on the first surface, the second photoelectric conversion unit is disposed on the second surface, and an absorption band of the first photoelectric conversion unit is different from an absorption band of the second photoelectric conversion unit.

摘要翻译： 提供一种包括显示单元和光电转换板的电子设备。 显示单元包括彼此相对的显示表面和背表面，并且光电转换板的边缘可旋转地连接到显示单元的后表面。 光电转换板包括基板，第一光电转换单元和第二光电转换单元。 基板具有彼此相对的第一表面和第二表面，第一光电转换单元设置在第一表面上，第二光电转换单元设置在第二表面上，第一光电转换单元的吸收带 单元与第二光电转换单元的吸收带不同。

公开(公告)号：US08879018B2

公开(公告)日：2014-11-04

申请号：US13411688

申请日：2012-03-05

申请人： Ren-Hong Jhan ,  Jung-Hui Hsu ,  Kuo-Sen Kung ,  Chun-Hao Tu ,  Jen-Pei Tseng ,  Yu-Jung Liu ,  Jiun-Jye Chang

发明人： Ren-Hong Jhan ,  Jung-Hui Hsu ,  Kuo-Sen Kung ,  Chun-Hao Tu ,  Jen-Pei Tseng ,  Yu-Jung Liu ,  Jiun-Jye Chang

IPC分类号： G02F1/1333 ,  G02F1/133 ,  G06F1/16 ,  G06F1/32 ,  G06F1/26

CPC分类号： G06F1/1637 ,  G06F1/263 ,  G06F1/32

摘要： An electronic apparatus and a display thereof are disclosed. The display includes a back plate, a photoelectric converting module, and a display module. The back plate has an inner surface and an open is formed on the back plate. The back plate has an inner edge around the open. The inner edge is concave toward the direction back to inner surface to form a supporting part. The photoelectric converting module is disposed on the supporting part without protruding out of the inner surface. The photoelectric converting module has a light-receiving surface exposed to the open. The display module is disposed on the inner surface of the back plate and the display module covers the photoelectric converting module. The display module has a display surface back to the photoelectric converting module.

摘要翻译： 公开了一种电子设备及其显示器。 显示器包括背板，光电转换模块和显示模块。 背板具有内表面，并且在背板上形成开口。 背板有一个围绕开口的内边缘。 内边缘朝向内表面的方向是凹入的，以形成支撑部分。 光电转换模块设置在支撑部分上，而不突出到内表面之外。 光电转换模块具有暴露于开口的光接收表面。 显示模块设置在背板的内表面上，显示模块覆盖光电转换模块。 显示模块具有返回到光电转换模块的显示面。

公开(公告)号：US20130107533A1

公开(公告)日：2013-05-02

申请号：US13526503

申请日：2012-06-18

申请人： Wei-Cheng Wu ,  Kuo-Sen Kung ,  Chun-Hao Tu ,  Ren-Hong Jhan ,  Fang-Hui Chan ,  Jen-Pei Tseng ,  Yu-Jung Liu ,  Jiun-Jye Chang

发明人： Wei-Cheng Wu ,  Kuo-Sen Kung ,  Chun-Hao Tu ,  Ren-Hong Jhan ,  Fang-Hui Chan ,  Jen-Pei Tseng ,  Yu-Jung Liu ,  Jiun-Jye Chang

IPC分类号： F21V33/00

CPC分类号： H04N13/312 ,  G02B27/22 ,  G02B27/2214 ,  G02B27/2228 ,  H04N13/00 ,  H04N13/10 ,  H04N13/30

摘要： A three-dimensional display device includes a display panel and a barrier structure. The barrier structure is located at one side of the display panel. Besides, the barrier structure includes a plurality of barrier patterns and a plurality of transparent slits. The barrier patterns and the transparent slits are arranged alternately. In particular, the barrier patterns include a photoelectric conversion structure.

摘要翻译： 三维显示装置包括显示面板和屏障结构。 屏障结构位于显示面板的一侧。 此外，阻挡结构包括多个阻挡图案和多个透明狭缝。 阻挡图案和透明狭缝交替布置。 特别地，阻挡图案包括光电转换结构。