公开(公告)号：US20120132914A1

公开(公告)日：2012-05-31

申请号：US13045502

申请日：2011-03-10

申请人： Chia-Hsiang Chen ,  Shih-Hsien Tseng ,  Ming-Chin Hung ,  Chun-Hao Tu ,  Wei-Ting Lin ,  Jiun-Jye Chang

发明人： Chia-Hsiang Chen ,  Shih-Hsien Tseng ,  Ming-Chin Hung ,  Chun-Hao Tu ,  Wei-Ting Lin ,  Jiun-Jye Chang

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/45 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

摘要： An oxide semiconductor thin film transistor structure includes a substrate, a gate electrode disposed on the substrate, a semiconductor insulating layer disposed on the substrate and the gate electrode, an oxide semiconductor layer disposed on the semiconductor insulating layer, a patterned semiconductor layer disposed on the oxide semiconductor layer, and a source electrode and a drain electrode respectively disposed on the patterned semiconductor layer. The source electrode and the drain electrode are made of a metal layer.

摘要翻译： 氧化物半导体薄膜晶体管结构包括基板，设置在基板上的栅极电极，设置在基板上的半导体绝缘层和栅电极，设置在半导体绝缘层上的氧化物半导体层，设置在该半导体绝缘层上的图案化半导体层 氧化物半导体层，以及分别设置在图案化半导体层上的源电极和漏电极。 源电极和漏电极由金属层制成。

公开(公告)号：US08643006B2

公开(公告)日：2014-02-04

申请号：US13163727

申请日：2011-06-20

申请人： Chia-Hsiang Chen ,  Ming-Chin Hung ,  Chun-Hao Tu ,  Wei-Ting Lin ,  Jiun-Jye Chang

发明人： Chia-Hsiang Chen ,  Ming-Chin Hung ,  Chun-Hao Tu ,  Wei-Ting Lin ,  Jiun-Jye Chang

IPC分类号： H01L29/786

CPC分类号： H01L29/4908 ,  H01L29/7869

摘要： A thin film transistor is provided. The thin film transistor includes a substrate, a gate, a gate insulating layer, a source and a drain, a channel layer, and first and second patterned passivation layers. The gate is disposed on the substrate. The gate insulating layer is disposed on the gate. The source and the drain are disposed on the gate insulating layer. The channel layer is disposed above or under the source and the drain, wherein a portion of the channel layer is exposed between the source and the drain. The first patterned passivation layer is disposed on the portion of the channel layer, wherein the first patterned passivation layer includes metal oxide, and the first patterned passivation layer has a thickness ranging from 50 angstroms to 300 angstroms. The second patterned passivation layer covers the first patterned passivation layer, the gate insulating layer, and the source and the drain.

摘要翻译： 提供薄膜晶体管。 薄膜晶体管包括衬底，栅极，栅极绝缘层，源极和漏极，沟道层以及第一和第二图案化钝化层。 栅极设置在基板上。 栅极绝缘层设置在栅极上。 源极和漏极设置在栅极绝缘层上。 沟道层设置在源极和漏极之上或之下，其中沟道层的一部分暴露在源极和漏极之间。 第一图案化钝化层设置在沟道层的部分上，其中第一图案化钝化层包括金属氧化物，第一图案化钝化层的厚度范围为50埃至300埃。 第二图案化钝化层覆盖第一图案化钝化层，栅极绝缘层以及源极和漏极。

公开(公告)号：US20120267621A1

公开(公告)日：2012-10-25

申请号：US13163727

申请日：2011-06-20

申请人： Chia-Hsiang Chen ,  Ming-Chin Hung ,  Chun-Hao Tu ,  Wei-Ting Lin ,  Jiun-Jye Chang

发明人： Chia-Hsiang Chen ,  Ming-Chin Hung ,  Chun-Hao Tu ,  Wei-Ting Lin ,  Jiun-Jye Chang

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/4908 ,  H01L29/7869

摘要： A thin film transistor is provided. The thin film transistor includes a substrate, a gate, a gate insulating layer, a source and a drain, a channel layer, and first and second patterned passivation layers. The gate is disposed on the substrate. The gate insulating layer is disposed on the gate. The source and the drain are disposed on the gate insulating layer. The channel layer is disposed above or under the source and the drain, wherein a portion of the channel layer is exposed between the source and the drain. The first patterned passivation layer is disposed on the portion of the channel layer, wherein the first patterned passivation layer includes metal oxide, and the first patterned passivation layer has a thickness ranging from 50 angstroms to 300 angstroms. The second patterned passivation layer covers the first patterned passivation layer, the gate insulating layer, and the source and the drain.

摘要翻译： 提供薄膜晶体管。 薄膜晶体管包括衬底，栅极，栅极绝缘层，源极和漏极，沟道层以及第一和第二图案化钝化层。 栅极设置在基板上。 栅极绝缘层设置在栅极上。 源极和漏极设置在栅极绝缘层上。 沟道层设置在源极和漏极之上或之下，其中沟道层的一部分暴露在源极和漏极之间。 第一图案化钝化层设置在沟道层的部分上，其中第一图案化钝化层包括金属氧化物，第一图案化钝化层的厚度范围为50埃至300埃。 第二图案化钝化层覆盖第一图案化钝化层，栅极绝缘层以及源极和漏极。

公开(公告)号：US20120061661A1

公开(公告)日：2012-03-15

申请号：US13089282

申请日：2011-04-18

申请人： Po-Tsun Liu ,  Yi-Teh Chou ,  Li-Feng Teng ,  Fu-Hai Li ,  Han-Ping D. Shieh ,  Wei-Ting Lin ,  Ming-Chin Hung ,  Chun-Ching Hsiao ,  Jiun-Jye Chang ,  Po-Lun Chen

发明人： Po-Tsun Liu ,  Yi-Teh Chou ,  Li-Feng Teng ,  Fu-Hai Li ,  Han-Ping D. Shieh ,  Wei-Ting Lin ,  Ming-Chin Hung ,  Chun-Ching Hsiao ,  Jiun-Jye Chang ,  Po-Lun Chen

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

摘要： A semiconductor structure and a fabricating method thereof are provided. The fabricating method includes forming a gate, a source, and a drain on a substrate and forming an oxide semiconductor material between the gate and the source and drain. The oxide semiconductor material is formed by performing a deposition process, and nitrogen gas is introduced before the deposition process is completely performed, so as to form oxide semiconductor nitride on the oxide semiconductor material.

摘要翻译： 提供半导体结构及其制造方法。 制造方法包括在衬底上形成栅极，源极和漏极，并在栅极和源极和漏极之间形成氧化物半导体材料。 通过进行沉积工艺形成氧化物半导体材料，并且在完成沉积工艺之前引入氮气，以在氧化物半导体材料上形成氧化物半导体氮化物。

公开(公告)号：US08609460B2

公开(公告)日：2013-12-17

申请号：US13089282

申请日：2011-04-18

申请人： Po-Tsun Liu ,  Yi-Teh Chou ,  Li-Feng Teng ,  Fu-Hai Li ,  Han-Ping D. Shieh ,  Wei-Ting Lin ,  Ming-Chin Hung ,  Chun-Ching Hsiao ,  Jiun-Jye Chang ,  Po-Lun Chen

发明人： Po-Tsun Liu ,  Yi-Teh Chou ,  Li-Feng Teng ,  Fu-Hai Li ,  Han-Ping D. Shieh ,  Wei-Ting Lin ,  Ming-Chin Hung ,  Chun-Ching Hsiao ,  Jiun-Jye Chang ,  Po-Lun Chen

IPC分类号： H01L21/00 ,  H01L21/16 ,  H01L29/10 ,  H01L29/12 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

摘要： A semiconductor structure and a fabricating method thereof are provided. The fabricating method includes forming a gate, a source, and a drain on a substrate and forming an oxide semiconductor material between the gate and the source and drain. The oxide semiconductor material is formed by performing a deposition process, and nitrogen gas is introduced before the deposition process is completely performed, so as to form oxide semiconductor nitride on the oxide semiconductor material.

摘要翻译： 提供半导体结构及其制造方法。 制造方法包括在衬底上形成栅极，源极和漏极，并在栅极和源极和漏极之间形成氧化物半导体材料。 通过进行沉积工艺形成氧化物半导体材料，并且在完成沉积工艺之前引入氮气，以在氧化物半导体材料上形成氧化物半导体氮化物。

公开(公告)号：US08801948B2

公开(公告)日：2014-08-12

申请号：US13610712

申请日：2012-09-11

申请人： Ming-Chin Hung ,  Youngbae Park ,  Chun-Yao Huang ,  Shih Chang Chang ,  John Z. Zhong

发明人： Ming-Chin Hung ,  Youngbae Park ,  Chun-Yao Huang ,  Shih Chang Chang ,  John Z. Zhong

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC分类号： H01L21/308 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/1288

摘要： Embodiments of the present disclosure relate to display devices and methods for manufacturing display devices. Specifically, embodiments of the present disclosure employ a halftone photoresist layer useful for reducing a number of masks needed to manufacture TFT backplane (e.g., thin-film transistors (TFTs) with fringe-field shifting). The halftone photoresist layer defines two areas, one defining an etching area for a first layer (e.g., a common voltage layer) and the other defining an etching area for a second layer (e.g., an organic passivation layer).

摘要翻译： 本公开的实施例涉及用于制造显示设备的显示设备和方法。 具体地，本公开的实施例采用半色调光致抗蚀剂层，其可用于减少制造TFT背板所需的掩模数量（例如，具有边缘场移位的薄膜晶体管（TFT））。 半色调光致抗蚀剂层限定两个区域，一个限定第一层（例如，公共电压层）的蚀刻区域，另一个限定第二层（例如，有机钝化层）的蚀刻区域。

公开(公告)号：US20140004704A1

公开(公告)日：2014-01-02

申请号：US13610712

申请日：2012-09-11

申请人： Ming-Chin Hung ,  Youngbae Park ,  Chun-Yao Huang ,  Shih Chang Chang ,  John Z. Zhong

发明人： Ming-Chin Hung ,  Youngbae Park ,  Chun-Yao Huang ,  Shih Chang Chang ,  John Z. Zhong

IPC分类号： H01L21/308

CPC分类号： H01L21/308 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/1288

摘要： Embodiments of the present disclosure relate to display devices and methods for manufacturing display devices. Specifically, embodiments of the present disclosure employ a halftone photoresist layer useful for reducing a number of masks needed to manufacture TFT backplane (e.g., thin-film transistors (TFTs) with fringe-field shifting). The halftone photoresist layer defines two areas, one defining an etching area for a first layer (e.g., a common voltage layer) and the other defining an etching area for a second layer (e.g., an organic passivation layer).

摘要翻译： 本公开的实施例涉及用于制造显示设备的显示设备和方法。 具体地，本公开的实施例采用半色调光致抗蚀剂层，其可用于减少制造TFT背板所需的掩模数量（例如，具有边缘场移位的薄膜晶体管（TFT））。 半色调光致抗蚀剂层限定两个区域，一个限定第一层（例如，公共电压层）的蚀刻区域，另一个限定第二层（例如，有机钝化层）的蚀刻区域。

公开(公告)号：US20080290783A1

公开(公告)日：2008-11-27

申请号：US11754194

申请日：2007-05-25

申请人： Yu-Tai Tao ,  Kun-Yang Wu ,  Ming-Chin Hung ,  Hung-Wei Huang

发明人： Yu-Tai Tao ,  Kun-Yang Wu ,  Ming-Chin Hung ,  Hung-Wei Huang

IPC分类号： C07C323/00 ,  H01B5/00 ,  H01J1/62

CPC分类号： H05B33/26 ,  H01L51/5088 ,  H01L51/5234 ,  H01L2251/5315

摘要： The present invention discloses a self-assembled monolayer with a general formula G1-R-G2, wherein G1 is SH. R of the mentioned general formula comprises one or any combination selected from the group consisting of the following: unsubstituted linear, branched, or cyclic alkyl moiety; single or multi-substituted linear, branched, or cyclic alkyl moiety with substituent selected from the group consisting of alkene and alkyne; aromatic group; multiple fused ring group; and multiple fused ring group with heteroatoms. G2 is an electron-withdrawing group.

摘要翻译： 本发明公开了具有通式G1-R-G2的自组装单层，其中G1是SH。 所述通式的R包含选自以下的一种或任何组合：未取代的直链，支链或环状烷基部分; 具有选自烯烃和炔烃的取代基的单或多取代的直链，支链或环状烷基部分; 芳香族; 多稠环; 和具有杂原子的多个稠环基团。 G2是吸电子基团。

公开(公告)号：US6006682A

公开(公告)日：1999-12-28

申请号：US20316

申请日：1998-02-09

申请人： Ming-Chin Hung

发明人： Ming-Chin Hung

IPC分类号： F23G5/16 ,  F23G5/44 ,  F23G5/00

CPC分类号： F23G5/448 ,  F23G5/165 ,  F23G2203/80 ,  F23G2205/14 ,  F23G2900/54001 ,  F23J2217/40 ,  F23J2217/50

摘要： A garbage incinerator with tunnel furnace combustion includes a tunnel furnace serving as the burner unit, a number of carriers serving as the burner beds, and a specified track course to deliver the garbage-loaded carriers into the tunnel furnace to incinerate the garbage. A hopper is provided to receive the garbage and spread it evenly onto the carrier. Each carrier is driven into the tunnel furnace to burn the garbage and includes a bottom loading plate onto which the consumed embers fall. An automatic ember removing equipment is provided for to remove the embers from the carrier. The carriers travel on a circular track so that they continuously move in and out of the furnace.

摘要翻译： 具有隧道炉燃烧的垃圾焚烧炉包括用作燃烧器单元的隧道炉，用作燃烧器床的多个载体，以及用于将垃圾加载的载体输送到隧道炉中以焚化垃圾的特定轨道路线。 提供料斗以接收垃圾并将其均匀分散在载体上。 每个载体被驱动到隧道炉中以烧毁垃圾，并且包括底部装载板，消耗的余烬落在其上。 提供了一种用于从载体中去除余烬的自动除尘设备。 载体在圆形轨道上行进，以便它们连续地进出炉内。