利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

3 条记录 (耗时 0.032 秒)

    Interconnect structure and method to achieve unlanded vias for low dielectric constant materials
    2.
    发明授权
    Interconnect structure and method to achieve unlanded vias for low dielectric constant materials 失效
    互连结构和方法来实现低介电常数材料的非通孔

    公开(公告)号：US5935868A

    公开(公告)日：1999-08-10

    申请号：US829112

    申请日：1997-03-31

    申请人： Sychyi Fang ,  Chaunbin Pan ,  Sing-Mo Tzeng ,  Chien Chiang

    发明人： Sychyi Fang ,  Chaunbin Pan ,  Sing-Mo Tzeng ,  Chien Chiang

    IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L21/00

    CPC分类号： H01L23/5226 ,  H01L21/76802 ,  H01L21/76805 ,  H01L2924/0002

    摘要： A method of forming an interconnect structure using a low dielectric constant material as an intralayer dielectric is described. In one embodiment, the present inventive method comprises the following steps. A conductive structure that is surrounded by a low dielectric constant material on its side surfaces is formed. A first inorganic insulator is formed over at least a portion of the low dielectric constant material. A second inorganic insulator is formed over the first inorganic insulator. A photoresist layer is deposited and then patterned to form an unlanded via in the second inorganic insulator. The second inorganic insulator and a portion of the first inorganic insulator are etched in order to form the unlanded via.

    摘要翻译： 描述了使用低介电常数材料作为层间电介质形成互连结构的方法。 在一个实施例中，本发明的方法包括以下步骤。 形成在其侧表面上由低介电常数材料包围的导电结构。 在低介电常数材料的至少一部分上形成第一无机绝缘体。 在第一无机绝缘体上形成第二无机绝缘体。 沉积光致抗蚀剂层，然后将其图案化以在第二无机绝缘体中形成未上覆的通孔。 蚀刻第二无机绝缘体和第一无机绝缘体的一部分以形成未经过的通孔。

    Method of using additives with silica-based slurries to enhance selectivity in metal CMP
    3.
    发明授权
    Method of using additives with silica-based slurries to enhance selectivity in metal CMP 失效
    使用添加剂与二氧化硅基浆料以提高金属CMP中的选择性的方法

    公开(公告)号：US5614444A

    公开(公告)日：1997-03-25

    申请号：US469164

    申请日：1995-06-06

    申请人： Janos Farkas ,  Rahul Jairath ,  Matt Stell ,  Sing-Mo Tzeng

    发明人： Janos Farkas ,  Rahul Jairath ,  Matt Stell ,  Sing-Mo Tzeng

    IPC分类号： H01L21/3105 ,  H01L21/3213 ,  H01L21/302

    CPC分类号： H01L21/3105 ,  H01L21/3213

    摘要： A method of using additives with silica-based slurries to enhance metal selectivity in polishing metallic materials utilizing a chemical-mechanical polishing (CMP) process. Additives are used with silica-based slurries to passivate a dielectric surface, such as a silicon dioxide (SiO.sub.2) surface, of a semiconductor wafer so that dielectric removal rate is reduced when CMP is applied. The additive is comprised of at least a polar component and an apolar component. The additive interacts with the surface silanol group of the SiO.sub.2 surface to inhibit particles of the silica-based slurry from interacting with hydroxyl molecules of the surface silanol group. By applying a surface passivation layer on the SiO.sub.2 surface, erosion of the SiO.sub.2 surface is reduced. However, the metallic surface is not influenced significantly by the additive, so that the selectivity of metal removal over oxide removal is enhanced.

    摘要翻译： 使用具有二氧化硅基浆料的添加剂的方法，以通过化学机械抛光（CMP）工艺来提高金属材料抛光的金属选择性。 添加剂与二氧化硅基浆料一起使用以钝化半导体晶片的电介质表面，例如二氧化硅（SiO 2）表面，使得当施加CMP时电介质去除速率降低。 添加剂由至少极性组分和非极性组分组成。 该添加剂与SiO 2表面的表面硅烷醇基团相互作用，以抑制二氧化硅基浆料的颗粒与表面硅烷醇基团的羟基分子相互作用。 通过在SiO 2表面上施加表面钝化层，降低了SiO 2表面的侵蚀。 然而，金属表面不会被添加剂显着影响，从而提高了金属去除对氧化物去除的选择性。